KR20050012176A - 리소그래피 장치 및 디바이스 제조방법 - Google Patents
리소그래피 장치 및 디바이스 제조방법 Download PDFInfo
- Publication number
- KR20050012176A KR20050012176A KR1020040057634A KR20040057634A KR20050012176A KR 20050012176 A KR20050012176 A KR 20050012176A KR 1020040057634 A KR1020040057634 A KR 1020040057634A KR 20040057634 A KR20040057634 A KR 20040057634A KR 20050012176 A KR20050012176 A KR 20050012176A
- Authority
- KR
- South Korea
- Prior art keywords
- sensor
- substrate
- layer
- liquid
- metal
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (12)
- 패터닝장치로부터 기판상으로 패턴을 투영시키도록 배치되는 리소그래피 투영장치에 있어서,- 상기 투영시스템의 마지막 요소와 상기 기판 사이의 공간에 침지액체를 제공하도록 배치된 액체공급시스템; 및- 방사선에 의하여 노광되는 기판테이블상에 장착되는 한편, 상기 액체공급시스템으로부터의 침지액체에 침지되는 센서로서, 하나 또는 적은(few) 종의 금속류로 형성되는 상기 센서의 조사 동안, 상기 침지액체와 접촉하는 외측면을 포함하는 상기 센서를 갖는 것을 특징으로 하는 리소그래피 투영장치.
- 제1항에 있어서,상기 외측면은 하나의 금속류로 된 연속층으로 형성되는 것을 특징으로 하는 리소그래피 투영장치.
- 제2항에 있어서,상기 연속층은 두께가 균일하지 않아서 상이한 흡수특성들을 갖는 영역들을 제공하는 것을 특징으로 하는 리소그래피 투영장치.
- 제1항에 있어서,상기 외측면은 하나의 금속류로 된 층으로 형성되고, 상기 센서는 세라믹재료로 된 층을 더 포함하는 것을 특징으로 하는 리소그래피 투영장치.
- 제1항에 있어서,상기 센서는 고립재료(isolation material)로 된 1이상의 층을 포함하는 것을 특징으로 하는 리소그래피 투영장치.
- 제5항에 있어서,상기 센서는 1이상의, 균일한 두께로 이루어지지 않은 금속층을 포함하는 것을 특징하는 리소그래피 투영장치.
- 제6항에 있어서,상기 1이상의 금속층은 각각 상이한 금속류로 된 2개의 층인 것을 특징으로 하는 리소그래피 투영장치.
- 제6항 또는 제7항에 있어서,상기 주요 외측면은 상기 고립재료로 된 층의 영역 및 한가지 금속류로 이루어진 상기 1이상의 금속층 중 하나의 영역을 포함하여 이루어지는 것을 특징으로 하는 리소그래피 투영장치.
- 제7항에 있어서,상기 2개의 금속층은 접촉해 있고 상기 고립재료의 층은 전기 절연재료이며 상기 주요 외측면을 형성하는 것을 특징으로 하는 리소그래피 투영장치.
- 제7항 또는 제8항에 있어서,상기 고립재료의 층은 상기 2개의 금속층들 사이에 끼워지는 것을 특징으로 하는 리소그래피 투영장치.
- 제1항 내지 제10항 중 어느 한 항에 있어서,상기 센서는, 상이한 흡수특성들의 영역들과 상기 흡수요소들에 의하여 형성될 경우에는 상기 외측면까지를 더 포함하는 것을 특징으로 하는 리소그래피 투영장치.
- 디바이스 제조방법에 있어서,- 투영시스템의 마지막요소와 기판 사이의 공간내에 침지액체를 통하여 상기 기판상으로 패터닝된 방사선 빔을 투영하는 단계; 및- 상기 마지막 요소와 상기 사이에 침지액체를 제공한 후에 상기 기판테이블상의 센서를 조명하는 단계를 포함하고; 상기 센서는 하나 또는 적은 금속류로 형성되고 상기 침지액체와 접촉하는 외측면을 포함하는 것을 특징으로 하는 디바이스 제조방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03255228A EP1500982A1 (en) | 2003-07-24 | 2003-07-24 | Lithographic apparatus and device manufacturing method |
EP03255228.3 | 2003-07-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050012176A true KR20050012176A (ko) | 2005-01-31 |
KR100649176B1 KR100649176B1 (ko) | 2006-11-24 |
Family
ID=33484041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040057634A KR100649176B1 (ko) | 2003-07-24 | 2004-07-23 | 리소그래피 장치 및 디바이스 제조방법 |
Country Status (8)
Country | Link |
---|---|
US (8) | US7184122B2 (ko) |
EP (2) | EP1500982A1 (ko) |
JP (1) | JP4037391B2 (ko) |
KR (1) | KR100649176B1 (ko) |
CN (2) | CN101694564B (ko) |
DE (1) | DE602004032091D1 (ko) |
SG (1) | SG108997A1 (ko) |
TW (1) | TWI245171B (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100706921B1 (ko) * | 2005-05-03 | 2007-04-13 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스의 제조 방법 |
KR100810700B1 (ko) * | 2005-06-29 | 2008-03-07 | 키몬다 아게 | 침지 리소그래피 시스템용 유체 |
KR20170118142A (ko) * | 2015-02-17 | 2017-10-24 | 칼 짜이스 에스엠테 게엠베하 | 특히 마이크로리소그래픽 투영 노광 장치의 광학 시스템의 조립체 |
Families Citing this family (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10503084B2 (en) | 2002-11-12 | 2019-12-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP3953460B2 (ja) | 2002-11-12 | 2007-08-08 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置 |
DE10261775A1 (de) | 2002-12-20 | 2004-07-01 | Carl Zeiss Smt Ag | Vorrichtung zur optischen Vermessung eines Abbildungssystems |
CN101002140B (zh) * | 2003-04-11 | 2010-12-08 | 株式会社尼康 | 保持平板印刷投射透镜下面的浸没流体的设备和方法 |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2738792B1 (en) | 2003-06-13 | 2015-08-05 | Nikon Corporation | Exposure method, substrate stage, exposure apparatus, and device manufacturing method |
KR101419663B1 (ko) | 2003-06-19 | 2014-07-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
EP1500982A1 (en) | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2005010960A1 (ja) | 2003-07-25 | 2005-02-03 | Nikon Corporation | 投影光学系の検査方法および検査装置、ならびに投影光学系の製造方法 |
KR101785707B1 (ko) | 2003-07-28 | 2017-11-06 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법 |
US7779781B2 (en) | 2003-07-31 | 2010-08-24 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI263859B (en) * | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG145780A1 (en) * | 2003-08-29 | 2008-09-29 | Nikon Corp | Exposure apparatus and device fabricating method |
KR101238114B1 (ko) | 2003-09-03 | 2013-02-27 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
JP4444920B2 (ja) * | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
JP5136566B2 (ja) * | 2003-09-29 | 2013-02-06 | 株式会社ニコン | 露光装置及び露光方法並びにデバイス製造方法 |
KR101289918B1 (ko) | 2003-09-29 | 2013-07-25 | 가부시키가이샤 니콘 | 노광장치, 노광방법 및 디바이스 제조방법 |
EP1672682A4 (en) | 2003-10-08 | 2008-10-15 | Zao Nikon Co Ltd | SUBSTRATE TRANSPORT DEVICE AND METHOD, EXPOSURE DEVICE AND METHOD AND COMPONENT MANUFACTURING METHOD |
JP2005136364A (ja) * | 2003-10-08 | 2005-05-26 | Zao Nikon Co Ltd | 基板搬送装置、露光装置、並びにデバイス製造方法 |
EP1672681B8 (en) | 2003-10-08 | 2011-09-21 | Miyagi Nikon Precision Co., Ltd. | Exposure apparatus, substrate carrying method, exposure method, and method for producing device |
TW200514138A (en) | 2003-10-09 | 2005-04-16 | Nippon Kogaku Kk | Exposure equipment and exposure method, manufacture method of component |
EP3392713A1 (en) | 2003-10-31 | 2018-10-24 | Nikon Corporation | Immersion exposure apparatus and method |
TW201804262A (zh) * | 2003-12-03 | 2018-02-01 | 尼康股份有限公司 | 曝光裝置、曝光方法、元件製造方法 |
KR101111363B1 (ko) * | 2003-12-15 | 2012-04-12 | 가부시키가이샤 니콘 | 투영노광장치 및 스테이지 장치, 그리고 노광방법 |
US20070081133A1 (en) * | 2004-12-14 | 2007-04-12 | Niikon Corporation | Projection exposure apparatus and stage unit, and exposure method |
KR101547037B1 (ko) | 2003-12-15 | 2015-08-24 | 가부시키가이샤 니콘 | 스테이지 장치, 노광 장치, 및 노광 방법 |
US7589822B2 (en) * | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
WO2005076321A1 (ja) * | 2004-02-03 | 2005-08-18 | Nikon Corporation | 露光装置及びデバイス製造方法 |
EP1747499A2 (en) * | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7796274B2 (en) | 2004-06-04 | 2010-09-14 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8384874B2 (en) | 2004-07-12 | 2013-02-26 | Nikon Corporation | Immersion exposure apparatus and device manufacturing method to detect if liquid on base member |
EP3258318B1 (en) * | 2004-08-03 | 2019-02-27 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7397533B2 (en) * | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
KR101942138B1 (ko) * | 2005-01-31 | 2019-01-24 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US8692973B2 (en) * | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
KR101140755B1 (ko) | 2005-02-10 | 2012-05-03 | 에이에스엠엘 네델란즈 비.브이. | 침지 액체, 노광 장치, 및 노광 프로세스 |
US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7525638B2 (en) * | 2005-03-23 | 2009-04-28 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
JP2006303193A (ja) | 2005-04-20 | 2006-11-02 | Canon Inc | 露光装置、較正方法、およびデバイス製造方法 |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8054445B2 (en) * | 2005-08-16 | 2011-11-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2007029829A1 (ja) * | 2005-09-09 | 2007-03-15 | Nikon Corporation | 露光装置及び露光方法、並びにデバイス製造方法 |
US20070124987A1 (en) * | 2005-12-05 | 2007-06-07 | Brown Jeffrey K | Electronic pest control apparatus |
US7649611B2 (en) * | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100590173C (zh) * | 2006-03-24 | 2010-02-17 | 北京有色金属研究总院 | 一种荧光粉及其制造方法和所制成的电光源 |
KR101770082B1 (ko) * | 2006-09-01 | 2017-08-21 | 가부시키가이샤 니콘 | 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 디바이스 제조 방법, 그리고 캘리브레이션 방법 |
US8654305B2 (en) * | 2007-02-15 | 2014-02-18 | Asml Holding N.V. | Systems and methods for insitu lens cleaning in immersion lithography |
US8817226B2 (en) | 2007-02-15 | 2014-08-26 | Asml Holding N.V. | Systems and methods for insitu lens cleaning using ozone in immersion lithography |
US9176393B2 (en) * | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
NL2005126A (en) * | 2009-09-21 | 2011-03-22 | Asml Netherlands Bv | Lithographic apparatus, coverplate and device manufacturing method. |
KR20150016508A (ko) * | 2012-04-19 | 2015-02-12 | 에이에스엠엘 네델란즈 비.브이. | 기판 홀더, 리소그래피 장치 및 디바이스 제조 방법 |
CN104321702B (zh) * | 2012-05-22 | 2016-11-23 | Asml荷兰有限公司 | 传感器、光刻设备以及器件制造方法 |
JP6731118B2 (ja) | 2016-12-22 | 2020-07-29 | エーエスエムエル ネザーランズ ビー.ブイ. | 剥離耐性を向上させた上部層を有するオブジェクトを備えたリソグラフィ装置 |
CN106831787B (zh) | 2017-01-20 | 2018-10-23 | 成都倍特药业有限公司 | 用作布鲁顿酪氨酸激酶抑制剂的化合物及其制备方法和应用 |
NL2020440A (en) * | 2017-03-15 | 2018-09-19 | Asml Netherlands Bv | A Sensor Mark and a Method of Manufacturing a Sensor Mark |
CN110832399B (zh) | 2017-06-29 | 2021-09-28 | Asml荷兰有限公司 | 系统、光刻设备和减少衬底支撑件上的氧化或去除衬底支撑件上的氧化物的方法 |
US10871715B2 (en) | 2018-12-06 | 2020-12-22 | Asml Netherlands B.V. | Lithographic apparatus and a device manufacturing method |
WO2020212196A1 (en) | 2019-04-16 | 2020-10-22 | Asml Netherlands B.V. | Image sensor for immersion lithography |
Family Cites Families (106)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE242880C (ko) | ||||
DE206607C (ko) | ||||
DE224448C (ko) | ||||
DE221563C (ko) | ||||
GB1242527A (en) * | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US3560812A (en) * | 1968-07-05 | 1971-02-02 | Gen Electric | High selectively electromagnetic radiation detecting devices |
US3573975A (en) * | 1968-07-10 | 1971-04-06 | Ibm | Photochemical fabrication process |
DE2963537D1 (en) | 1979-07-27 | 1982-10-07 | Tabarelli Werner W | Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer |
FR2474708B1 (fr) | 1980-01-24 | 1987-02-20 | Dme | Procede de microphotolithographie a haute resolution de traits |
JPS5754317A (en) * | 1980-09-19 | 1982-03-31 | Hitachi Ltd | Method and device for forming pattern |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) * | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
US4390273A (en) * | 1981-02-17 | 1983-06-28 | Censor Patent-Und Versuchsanstalt | Projection mask as well as a method and apparatus for the embedding thereof and projection printing system |
JPS57153433A (en) * | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
US4880910A (en) * | 1981-09-18 | 1989-11-14 | Genentech, Inc. | Terminal methionyl bovine growth hormone and its use |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
DD206607A1 (de) | 1982-06-16 | 1984-02-01 | Mikroelektronik Zt Forsch Tech | Verfahren und vorrichtung zur beseitigung von interferenzeffekten |
US4510436A (en) * | 1982-07-15 | 1985-04-09 | Southwest Medical Products, Incorporated | Dielectric measuring systems |
DD242880A1 (de) | 1983-01-31 | 1987-02-11 | Kuch Karl Heinz | Einrichtung zur fotolithografischen strukturuebertragung |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS62121417A (ja) | 1985-11-22 | 1987-06-02 | Hitachi Ltd | 液浸対物レンズ装置 |
JPS62298728A (ja) | 1986-06-18 | 1987-12-25 | Fujitsu Ltd | 照度測定装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
US5040020A (en) * | 1988-03-31 | 1991-08-13 | Cornell Research Foundation, Inc. | Self-aligned, high resolution resonant dielectric lithography |
JPH03209479A (ja) | 1989-09-06 | 1991-09-12 | Sanee Giken Kk | 露光方法 |
JPH04196514A (ja) | 1990-11-28 | 1992-07-16 | Olympus Optical Co Ltd | 投影露光装置 |
US5121256A (en) * | 1991-03-14 | 1992-06-09 | The Board Of Trustees Of The Leland Stanford Junior University | Lithography system employing a solid immersion lens |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP2520833B2 (ja) | 1992-12-21 | 1996-07-31 | 東京エレクトロン株式会社 | 浸漬式の液処理装置 |
JPH06232379A (ja) * | 1993-02-01 | 1994-08-19 | Sharp Corp | 固体撮像素子 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US6104687A (en) * | 1996-08-26 | 2000-08-15 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
US5712710A (en) * | 1996-10-15 | 1998-01-27 | Cetin Karakus | Spectrophotometric probe for insitu measurement |
US6259099B1 (en) * | 1996-12-18 | 2001-07-10 | Commissariat A L'energie Atomique | Ultra-thin ionizing radiation detector and methods for making same |
JP3612920B2 (ja) | 1997-02-14 | 2005-01-26 | ソニー株式会社 | 光学記録媒体の原盤作製用露光装置 |
JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
EP1039511A4 (en) | 1997-12-12 | 2005-03-02 | Nikon Corp | PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS |
WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
JP2934726B2 (ja) | 1998-08-20 | 1999-08-16 | 株式会社ニコン | 投影露光方法 |
TWI242111B (en) * | 1999-04-19 | 2005-10-21 | Asml Netherlands Bv | Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus |
JP4504479B2 (ja) | 1999-09-21 | 2010-07-14 | オリンパス株式会社 | 顕微鏡用液浸対物レンズ |
JP2001272604A (ja) * | 2000-03-27 | 2001-10-05 | Olympus Optical Co Ltd | 液浸対物レンズおよびそれを用いた光学装置 |
TW591653B (en) * | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
US6576972B1 (en) * | 2000-08-24 | 2003-06-10 | Heetronix | High temperature circuit structures with expansion matched SiC, AlN and/or AlxGa1-xN(x>0.69) circuit device |
JP3730548B2 (ja) * | 2000-08-25 | 2006-01-05 | エイエスエム リトグラフィー ベスローテン フエンノートシャップ | 平板投影装置、素子製造方法およびそれによって製造された素子 |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
WO2002091078A1 (en) * | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
US6600547B2 (en) | 2001-09-24 | 2003-07-29 | Nikon Corporation | Sliding seal |
US6633385B2 (en) * | 2001-10-11 | 2003-10-14 | Teraxion Inc. | System and method for recording interference fringes in a photosensitive medium |
CN1791839A (zh) * | 2001-11-07 | 2006-06-21 | 应用材料有限公司 | 光点格栅阵列光刻机 |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
DE10210899A1 (de) * | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US7362508B2 (en) | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
CN101382738B (zh) * | 2002-11-12 | 2011-01-12 | Asml荷兰有限公司 | 光刻投射装置 |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
EP1420300B1 (en) | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100470367C (zh) * | 2002-11-12 | 2009-03-18 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
JP3953460B2 (ja) * | 2002-11-12 | 2007-08-08 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置 |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
SG121829A1 (en) * | 2002-11-29 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
DE10257766A1 (de) | 2002-12-10 | 2004-07-15 | Carl Zeiss Smt Ag | Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage |
SG165169A1 (en) | 2002-12-10 | 2010-10-28 | Nikon Corp | Liquid immersion exposure apparatus |
KR101085372B1 (ko) | 2002-12-10 | 2011-11-21 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
JP4232449B2 (ja) | 2002-12-10 | 2009-03-04 | 株式会社ニコン | 露光方法、露光装置、及びデバイス製造方法 |
EP1571700A4 (en) | 2002-12-10 | 2007-09-12 | Nikon Corp | OPTICAL DEVICE AND PROJECTION EXPOSURE DEVICE USING THE OPTICAL DEVICE |
EP1429190B1 (en) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
US7948604B2 (en) * | 2002-12-10 | 2011-05-24 | Nikon Corporation | Exposure apparatus and method for producing device |
SG152063A1 (en) | 2002-12-10 | 2009-05-29 | Nikon Corp | Exposure apparatus and method for producing device |
KR20120127755A (ko) | 2002-12-10 | 2012-11-23 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
JP4352874B2 (ja) | 2002-12-10 | 2009-10-28 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
CN101872135B (zh) | 2002-12-10 | 2013-07-31 | 株式会社尼康 | 曝光设备和器件制造法 |
AU2003289272A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Surface position detection apparatus, exposure method, and device porducing method |
AU2003302831A1 (en) | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure method, exposure apparatus and method for manufacturing device |
WO2004053956A1 (ja) | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及び露光方法、デバイス製造方法 |
EP1573730B1 (en) | 2002-12-13 | 2009-02-25 | Koninklijke Philips Electronics N.V. | Liquid removal in a method and device for irradiating spots on a layer |
KR100971441B1 (ko) | 2002-12-19 | 2010-07-21 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 레이어 상의 스폿을 조사하기 위한 방법 및 장치 |
AU2003295177A1 (en) | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
US7213963B2 (en) * | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4697138B2 (ja) * | 2003-07-08 | 2011-06-08 | 株式会社ニコン | 液浸リソグラフィ装置、液浸リソグラフィ方法、デバイス製造方法 |
EP1500982A1 (en) * | 2003-07-24 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
TWI263859B (en) * | 2003-08-29 | 2006-10-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7528929B2 (en) * | 2003-11-14 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7545481B2 (en) * | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TW201804262A (zh) * | 2003-12-03 | 2018-02-01 | 尼康股份有限公司 | 曝光裝置、曝光方法、元件製造方法 |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7796274B2 (en) * | 2004-06-04 | 2010-09-14 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
-
2003
- 2003-07-24 EP EP03255228A patent/EP1500982A1/en not_active Withdrawn
-
2004
- 2004-07-12 EP EP04254151A patent/EP1500986B1/en not_active Not-in-force
- 2004-07-12 TW TW093120784A patent/TWI245171B/zh not_active IP Right Cessation
- 2004-07-12 US US10/888,514 patent/US7184122B2/en active Active
- 2004-07-12 DE DE602004032091T patent/DE602004032091D1/de active Active
- 2004-07-22 SG SG200404366A patent/SG108997A1/en unknown
- 2004-07-23 KR KR1020040057634A patent/KR100649176B1/ko active IP Right Grant
- 2004-07-23 CN CN2009102115155A patent/CN101694564B/zh active Active
- 2004-07-23 CN CNB2004100590838A patent/CN100568103C/zh active Active
- 2004-07-23 JP JP2004215042A patent/JP4037391B2/ja not_active Expired - Fee Related
-
2006
- 2006-12-20 US US11/641,730 patent/US7557901B2/en not_active Expired - Fee Related
-
2009
- 2009-06-04 US US12/478,552 patent/US8711333B2/en active Active
-
2014
- 2014-04-25 US US14/262,295 patent/US9213247B2/en not_active Expired - Fee Related
-
2015
- 2015-11-13 US US14/941,320 patent/US9594308B2/en active Active
-
2017
- 2017-03-07 US US15/452,403 patent/US9804509B2/en not_active Expired - Fee Related
- 2017-10-26 US US15/795,227 patent/US10146143B2/en active Active
-
2018
- 2018-11-21 US US16/197,461 patent/US10444644B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100706921B1 (ko) * | 2005-05-03 | 2007-04-13 | 에이에스엠엘 네델란즈 비.브이. | 리소그래피 장치 및 디바이스의 제조 방법 |
KR100810700B1 (ko) * | 2005-06-29 | 2008-03-07 | 키몬다 아게 | 침지 리소그래피 시스템용 유체 |
KR20170118142A (ko) * | 2015-02-17 | 2017-10-24 | 칼 짜이스 에스엠테 게엠베하 | 특히 마이크로리소그래픽 투영 노광 장치의 광학 시스템의 조립체 |
Also Published As
Publication number | Publication date |
---|---|
US20160070178A1 (en) | 2016-03-10 |
JP4037391B2 (ja) | 2008-01-23 |
US7184122B2 (en) | 2007-02-27 |
US20070097343A1 (en) | 2007-05-03 |
JP2005045265A (ja) | 2005-02-17 |
US20090251674A1 (en) | 2009-10-08 |
EP1500982A1 (en) | 2005-01-26 |
CN100568103C (zh) | 2009-12-09 |
US7557901B2 (en) | 2009-07-07 |
DE602004032091D1 (de) | 2011-05-19 |
US20190086820A1 (en) | 2019-03-21 |
CN101694564A (zh) | 2010-04-14 |
US9594308B2 (en) | 2017-03-14 |
US20170176876A1 (en) | 2017-06-22 |
US10444644B2 (en) | 2019-10-15 |
US20180046095A1 (en) | 2018-02-15 |
KR100649176B1 (ko) | 2006-11-24 |
SG108997A1 (en) | 2005-02-28 |
US9804509B2 (en) | 2017-10-31 |
US20050041225A1 (en) | 2005-02-24 |
EP1500986A1 (en) | 2005-01-26 |
US8711333B2 (en) | 2014-04-29 |
CN1577100A (zh) | 2005-02-09 |
US9213247B2 (en) | 2015-12-15 |
US10146143B2 (en) | 2018-12-04 |
TW200508817A (en) | 2005-03-01 |
US20140313494A1 (en) | 2014-10-23 |
TWI245171B (en) | 2005-12-11 |
EP1500986B1 (en) | 2011-04-06 |
CN101694564B (zh) | 2012-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100649176B1 (ko) | 리소그래피 장치 및 디바이스 제조방법 | |
US20200124990A1 (en) | Lithographic apparatus and device manufacturing method | |
JP4987979B2 (ja) | レーザビームステアリングによるeuv放射源の空間不安定性の補正 | |
TWI338818B (en) | Lithographic apparatus immersion damage control | |
TW200525301A (en) | Lithographic apparatus and device manufacturing method | |
JP4376224B2 (ja) | リソグラフィ装置及びデバイス製造方法 | |
EP1510870A1 (en) | Lithographic apparatus and device manufacturing method | |
JP5390577B2 (ja) | リソグラフィ装置および方法 | |
JP4684218B2 (ja) | センサおよびリソグラフィ装置 | |
US8054445B2 (en) | Lithographic apparatus and device manufacturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20121112 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20131108 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20141112 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20151106 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20161104 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20171103 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20181113 Year of fee payment: 13 |