KR20020063093A - 박막 트랜지스터 장치 - Google Patents
박막 트랜지스터 장치 Download PDFInfo
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- KR20020063093A KR20020063093A KR1020010009500A KR20010009500A KR20020063093A KR 20020063093 A KR20020063093 A KR 20020063093A KR 1020010009500 A KR1020010009500 A KR 1020010009500A KR 20010009500 A KR20010009500 A KR 20010009500A KR 20020063093 A KR20020063093 A KR 20020063093A
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- 239000010409 thin film Substances 0.000 title claims abstract description 102
- 239000013078 crystal Substances 0.000 claims abstract description 119
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 28
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 10
- 229910052745 lead Inorganic materials 0.000 claims abstract description 10
- 229910052718 tin Inorganic materials 0.000 claims abstract description 10
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims description 28
- 239000012212 insulator Substances 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 23
- 239000000463 material Substances 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 11
- 238000005224 laser annealing Methods 0.000 description 11
- 239000011521 glass Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 230000007261 regionalization Effects 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 238000002425 crystallisation Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 4
- 239000013081 microcrystal Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H01L21/02524—Group 14 semiconducting materials
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- Crystallography & Structural Chemistry (AREA)
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- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
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Abstract
Description
Claims (6)
- 박막 트랜지스터 장치에 있어서,절연체 기판과,상기 절연체 기판 상에 형성된 다결정 박막과,상기 다결정 박막 상에 형성된 소스, 드레인, 채널 및 게이트로 이루어지는 트랜지스터를 포함하며,상기 다결정 박막은 Ⅳ족의 C, Si, Ge, Sn 및 Pb의 군으로부터 선택되는 어느 하나의 결정, 혹은 이들의 혼정으로 이루어지는 결정이고, 상기 소스와 드레인을 연결하는 적어도 하나의 경로 상에 있어서, 상기 기판 수직 방향에 대해 0∼5도의 각도를 갖는 <110>축과, 경로 방향에 대해 0∼30도의 각도를 갖는 <100>축을 포함하는 결정립이 한개 혹은 여러개 배열되어 있는 것을 특징으로 하는 박막 트랜지스터 장치.
- 제1항에 있어서,상기 다결정 박막은 Si 박막이고, 상기 Si 박막은 막 두께 10㎚∼100㎚이며, 상기 결정립의 {100}면에 있어서의 단면이 폭 300㎚∼5㎛인 것을 특징으로 하는 박막 트랜지스터 장치.
- 제1항에 있어서,상기 소스 및 상기 드레인의 적어도 한쪽에 있어서, 상기 소스 또는 드레인의 일부 또는 근방에 미결정 영역을 포함하고, 상기 미결정 영역의 평균 입자 크기는 상기 채널 영역에 있어서의 결정립의 평균 입자 크기보다 작고, 또한, 결정 방위는 상기 채널 영역에 있어서의 결정립보다 무질서한 것을 특징으로 하는 박막 트랜지스터 장치.
- 제1항에 있어서,상기 채널의 한쪽 또는 양방의 측부 근방에 있어서 미결정 영역을 포함하고, 상기 미결정 영역의 평균 입자 크기는 상기 채널 영역에 있어서의 결정립의 평균 입자 크기보다 작고, 또한, 결정 방위는 상기 채널 영역에 있어서의 결정립보다 무질서한 것을 특징으로 하는 박막 트랜지스터 장치.
- 박막 트랜지스터 장치에 있어서,절연체 기판과,상기 절연체 기판 상에 형성된 다결정 박막과,상기 다결정 박막 상에 형성된 소스, 드레인, 채널 및 게이트로 이루어지는 트랜지스터를 포함하며,상기 다결정 박막은 Ⅵ족의 C, Si, Ge, Sn 및 Pb의 군으로부터 선택되는 어느 하나의 결정, 혹은 이들의 혼정으로 이루어지는 결정이고, 상기 채널이 단 하나의 결정립으로 형성되며, 상기 결정립은 기판 수직 방향에 대해 0∼5도의 각도를갖는 <110>축을 포함하는 것을 특징으로 하는 박막 트랜지스터 장치.
- 박막 트랜지스터 장치에 있어서,절연체 기판과,상기 절연체 기판 상에 형성된 다결정 박막과,상기 다결정 박막 상에 형성된 소스, 드레인, 채널 및 게이트로 이루어지는 트랜지스터를 포함하며,상기 다결정 박막은 Ⅵ족의 C, Si, Ge, Sn 및 Pb의 군으로부터 선택되는 어느 하나의 결정, 혹은 이들의 혼정으로 이루어지는 결정이고, 상기 소스와 드레인을 연결하는 적어도 하나의 경로 상에 있어서, 상기 기판 수직 방향에 대해 0∼5도의 각도를 갖는 <110>축을 갖는 결정립이 여러개 배열되고, 상기 배열된 결정립의 <100>축끼리가 상호 0∼10도의 각도에서 일정한 것을 특징으로 하는 박막 트랜지스터 장치.
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JP2001-019026 | 2001-01-26 | ||
JP2001019026A JP4732599B2 (ja) | 2001-01-26 | 2001-01-26 | 薄膜トランジスタ装置 |
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KR20020063093A true KR20020063093A (ko) | 2002-08-01 |
KR100704331B1 KR100704331B1 (ko) | 2007-04-09 |
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KR1020010009500A KR100704331B1 (ko) | 2001-01-26 | 2001-02-24 | 박막 트랜지스터 장치 |
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US (1) | US6501095B2 (ko) |
JP (1) | JP4732599B2 (ko) |
KR (1) | KR100704331B1 (ko) |
TW (1) | TW479371B (ko) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100483987B1 (ko) * | 2002-07-08 | 2005-04-15 | 삼성에스디아이 주식회사 | 티에프티용 다결정 실리콘 박막 및 이를 사용한 디바이스 |
KR100483985B1 (ko) * | 2001-11-27 | 2005-04-15 | 삼성에스디아이 주식회사 | 박막 트랜지스터용 다결정 실리콘 박막 및 이를 사용한디바이스 |
KR100611225B1 (ko) * | 2003-11-22 | 2006-08-10 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그의 제조방법 |
US7714391B2 (en) | 2003-11-22 | 2010-05-11 | Samsung Mobile Display Co., Ltd. | Thin film transistor and method for fabricating the same |
US7863621B2 (en) | 2005-09-07 | 2011-01-04 | Samsung Mobile Display Co., Ltd. | Thin film transistor |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US6830993B1 (en) | 2000-03-21 | 2004-12-14 | The Trustees Of Columbia University In The City Of New York | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
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- 2001-02-24 KR KR1020010009500A patent/KR100704331B1/ko active IP Right Grant
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Cited By (5)
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KR100483985B1 (ko) * | 2001-11-27 | 2005-04-15 | 삼성에스디아이 주식회사 | 박막 트랜지스터용 다결정 실리콘 박막 및 이를 사용한디바이스 |
KR100483987B1 (ko) * | 2002-07-08 | 2005-04-15 | 삼성에스디아이 주식회사 | 티에프티용 다결정 실리콘 박막 및 이를 사용한 디바이스 |
KR100611225B1 (ko) * | 2003-11-22 | 2006-08-10 | 삼성에스디아이 주식회사 | 박막트랜지스터 및 그의 제조방법 |
US7714391B2 (en) | 2003-11-22 | 2010-05-11 | Samsung Mobile Display Co., Ltd. | Thin film transistor and method for fabricating the same |
US7863621B2 (en) | 2005-09-07 | 2011-01-04 | Samsung Mobile Display Co., Ltd. | Thin film transistor |
Also Published As
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JP4732599B2 (ja) | 2011-07-27 |
US20020100909A1 (en) | 2002-08-01 |
TW479371B (en) | 2002-03-11 |
US6501095B2 (en) | 2002-12-31 |
JP2002222957A (ja) | 2002-08-09 |
KR100704331B1 (ko) | 2007-04-09 |
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