KR20020008780A - 기판을 디처킹하기 위한 방법 및 장치 - Google Patents
기판을 디처킹하기 위한 방법 및 장치 Download PDFInfo
- Publication number
- KR20020008780A KR20020008780A KR1020010043823A KR20010043823A KR20020008780A KR 20020008780 A KR20020008780 A KR 20020008780A KR 1020010043823 A KR1020010043823 A KR 1020010043823A KR 20010043823 A KR20010043823 A KR 20010043823A KR 20020008780 A KR20020008780 A KR 20020008780A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- lift
- lift pins
- support assembly
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US61987000A | 2000-07-20 | 2000-07-20 | |
| US09/619,870 | 2000-07-20 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020050078817A Division KR100636487B1 (ko) | 2000-07-20 | 2005-08-26 | 기판 지지 장치 및 기판 디처킹 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20020008780A true KR20020008780A (ko) | 2002-01-31 |
Family
ID=24483658
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020010043823A Ceased KR20020008780A (ko) | 2000-07-20 | 2001-07-20 | 기판을 디처킹하기 위한 방법 및 장치 |
| KR1020050078817A Ceased KR100636487B1 (ko) | 2000-07-20 | 2005-08-26 | 기판 지지 장치 및 기판 디처킹 방법 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020050078817A Ceased KR100636487B1 (ko) | 2000-07-20 | 2005-08-26 | 기판 지지 장치 및 기판 디처킹 방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US6676761B2 (enExample) |
| EP (1) | EP1174910A3 (enExample) |
| JP (1) | JP4703050B2 (enExample) |
| KR (2) | KR20020008780A (enExample) |
| SG (1) | SG90780A1 (enExample) |
Families Citing this family (68)
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| EP1174910A3 (en) * | 2000-07-20 | 2010-01-06 | Applied Materials, Inc. | Method and apparatus for dechucking a substrate |
| JP2002064132A (ja) * | 2000-08-22 | 2002-02-28 | Tokyo Electron Ltd | 被処理体の受け渡し方法、被処理体の載置機構及びプローブ装置 |
| US6898064B1 (en) * | 2001-08-29 | 2005-05-24 | Lsi Logic Corporation | System and method for optimizing the electrostatic removal of a workpiece from a chuck |
| JP4244555B2 (ja) * | 2002-02-25 | 2009-03-25 | 東京エレクトロン株式会社 | 被処理体の支持機構 |
| US6905333B2 (en) * | 2002-09-10 | 2005-06-14 | Axcelis Technologies, Inc. | Method of heating a substrate in a variable temperature process using a fixed temperature chuck |
| TWI220786B (en) * | 2002-09-11 | 2004-09-01 | Au Optronics Corp | Supporting structure |
| US20040096636A1 (en) * | 2002-11-18 | 2004-05-20 | Applied Materials, Inc. | Lifting glass substrate without center lift pins |
| KR20040048018A (ko) * | 2002-12-02 | 2004-06-07 | 주식회사 에이디피엔지니어링 | Fpd 제조장치 |
| EP1475667A1 (en) * | 2003-05-09 | 2004-11-10 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1762898A3 (en) * | 2003-05-09 | 2007-03-28 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7083702B2 (en) * | 2003-06-12 | 2006-08-01 | Applied Materials, Inc. | RF current return path for a large area substrate plasma reactor |
| EP1491953A1 (en) * | 2003-06-23 | 2004-12-29 | ASML Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
| US7107125B2 (en) * | 2003-10-29 | 2006-09-12 | Applied Materials, Inc. | Method and apparatus for monitoring the position of a semiconductor processing robot |
| KR100484017B1 (ko) * | 2003-11-11 | 2005-04-20 | 주식회사 에이디피엔지니어링 | 이중 버퍼 및 어라이너가 구비된 로드락 챔버 |
| US7055229B2 (en) * | 2003-12-31 | 2006-06-06 | Intel Corporation | Support system for semiconductor wafers and methods thereof |
| US7434712B2 (en) * | 2004-07-09 | 2008-10-14 | Blackhawk Industries Product Group Unlimited Llc | Hooded holster |
| US20060005770A1 (en) * | 2004-07-09 | 2006-01-12 | Robin Tiner | Independently moving substrate supports |
| US7081042B2 (en) * | 2004-07-22 | 2006-07-25 | Applied Materials | Substrate removal from polishing tool |
| US20060156987A1 (en) * | 2005-01-18 | 2006-07-20 | Chien-Hsing Lai | Lift pin mechanism and substrate carrying device of a process chamber |
| US7789963B2 (en) * | 2005-02-25 | 2010-09-07 | Tokyo Electron Limited | Chuck pedestal shield |
| JP4628964B2 (ja) * | 2005-04-26 | 2011-02-09 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| KR100916130B1 (ko) * | 2005-12-28 | 2009-09-08 | 주식회사 에이디피엔지니어링 | 평판표시소자 제조장치의 리프트 핀 모듈 |
| JP4906375B2 (ja) * | 2006-03-20 | 2012-03-28 | 東京応化工業株式会社 | 基板支持部材 |
| TWI293910B (en) * | 2006-06-20 | 2008-03-01 | Cando Corp | Fixing board and polishing device using the same |
| JP4795899B2 (ja) * | 2006-08-31 | 2011-10-19 | 東京エレクトロン株式会社 | 基板載置機構および基板受け渡し方法 |
| US7758028B1 (en) * | 2006-09-25 | 2010-07-20 | Farlow Douglas T | Apparatus for assembling printed circuit boards |
| US8004293B2 (en) | 2006-11-20 | 2011-08-23 | Applied Materials, Inc. | Plasma processing chamber with ground member integrity indicator and method for using the same |
| JP4693805B2 (ja) * | 2007-03-16 | 2011-06-01 | 株式会社東芝 | 半導体装置の製造装置及び製造方法 |
| TWI349720B (en) * | 2007-05-30 | 2011-10-01 | Ind Tech Res Inst | A power-delivery mechanism and apparatus of plasma-enhanced chemical vapor deposition using the same |
| US7824146B2 (en) * | 2007-09-07 | 2010-11-02 | Advanced Technology Development Facility | Automated systems and methods for adapting semiconductor fabrication tools to process wafers of different diameters |
| JP5347294B2 (ja) * | 2007-09-12 | 2013-11-20 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
| FR2930561B1 (fr) * | 2008-04-28 | 2011-01-14 | Altatech Semiconductor | Dispositif et procede de traitement chimique en phase vapeur. |
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| TW201005825A (en) * | 2008-05-30 | 2010-02-01 | Panasonic Corp | Plasma processing apparatus and method |
| JP5261085B2 (ja) * | 2008-09-05 | 2013-08-14 | 東京エレクトロン株式会社 | 基板載置機構、基板処理装置、基板載置機構の制御方法及び記憶媒体 |
| KR101641130B1 (ko) * | 2008-10-09 | 2016-07-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 대형 플라즈마 처리 챔버를 위한 rf 복귀 경로 |
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| US9859145B2 (en) * | 2013-07-17 | 2018-01-02 | Lam Research Corporation | Cooled pin lifter paddle for semiconductor substrate processing apparatus |
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| JP7030416B2 (ja) * | 2017-03-16 | 2022-03-07 | キヤノン株式会社 | 基板保持装置、リソグラフィ装置、物品の製造方法 |
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| CN111261573B (zh) * | 2020-01-20 | 2024-02-27 | 京东方科技集团股份有限公司 | 支撑架、真空干燥装置、干燥系统、基板干燥方法 |
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| KR102735868B1 (ko) | 2020-08-27 | 2024-11-28 | 삼성전자주식회사 | 플라즈마 공정 장치 및 플라즈마 공정 장치에서의 웨이퍼 디척킹 방법 |
| US12183618B2 (en) * | 2020-10-01 | 2024-12-31 | Applied Materials, Inc. | Apparatus and methods to transfer substrates into and out of a spatial multi-substrate processing tool |
| CN112605787B (zh) * | 2020-12-14 | 2022-02-15 | 凯盛科技股份有限公司蚌埠华益分公司 | 用于k9玻璃加工超薄玻璃的抛光盘及抛光设备 |
| USD980884S1 (en) | 2021-03-02 | 2023-03-14 | Applied Materials, Inc. | Lift pin |
| CN113199645A (zh) * | 2021-05-25 | 2021-08-03 | 关鸿 | 一种辅助钻孔器 |
| JP7770157B2 (ja) * | 2021-10-22 | 2025-11-14 | 東京エレクトロン株式会社 | 被処理体の搬送方法および処理装置 |
| US12334383B2 (en) * | 2021-12-16 | 2025-06-17 | Applied Materials, Inc. | Substrate support gap pumping to prevent glow discharge and light-up |
| JP2023117038A (ja) * | 2022-02-10 | 2023-08-23 | 東京エレクトロン株式会社 | 基板支持方法及び基板処理装置 |
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Also Published As
| Publication number | Publication date |
|---|---|
| US7160392B2 (en) | 2007-01-09 |
| JP2002151581A (ja) | 2002-05-24 |
| US6676761B2 (en) | 2004-01-13 |
| KR100636487B1 (ko) | 2006-10-18 |
| KR20050091673A (ko) | 2005-09-15 |
| SG90780A1 (en) | 2002-08-20 |
| US20040089239A1 (en) | 2004-05-13 |
| EP1174910A3 (en) | 2010-01-06 |
| JP4703050B2 (ja) | 2011-06-15 |
| US20070062454A1 (en) | 2007-03-22 |
| US20030079691A1 (en) | 2003-05-01 |
| EP1174910A2 (en) | 2002-01-23 |
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