KR102458052B1 - 노광 장치 - Google Patents

노광 장치 Download PDF

Info

Publication number
KR102458052B1
KR102458052B1 KR1020217025777A KR20217025777A KR102458052B1 KR 102458052 B1 KR102458052 B1 KR 102458052B1 KR 1020217025777 A KR1020217025777 A KR 1020217025777A KR 20217025777 A KR20217025777 A KR 20217025777A KR 102458052 B1 KR102458052 B1 KR 102458052B1
Authority
KR
South Korea
Prior art keywords
substrate
holder
sensor
exposure apparatus
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020217025777A
Other languages
English (en)
Korean (ko)
Other versions
KR20210104172A (ko
Inventor
준이치 가네하라
Original Assignee
에이에스엠엘 네델란즈 비.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이에스엠엘 네델란즈 비.브이. filed Critical 에이에스엠엘 네델란즈 비.브이.
Publication of KR20210104172A publication Critical patent/KR20210104172A/ko
Application granted granted Critical
Publication of KR102458052B1 publication Critical patent/KR102458052B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electron Beam Exposure (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Liquid Crystal Substances (AREA)
  • Water Treatment By Sorption (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020217025777A 2017-02-03 2018-01-30 노광 장치 Active KR102458052B1 (ko)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
EP17154551.0 2017-02-03
EP17154551 2017-02-03
EP17169025.8 2017-05-02
EP17169025 2017-05-02
EP17193990 2017-09-29
EP17193990.3 2017-09-29
EP17201092 2017-11-10
EP17201092.8 2017-11-10
PCT/EP2018/052211 WO2018141713A1 (en) 2017-02-03 2018-01-30 Exposure apparatus
KR1020197025735A KR102291903B1 (ko) 2017-02-03 2018-01-30 노광 장치

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020197025735A Division KR102291903B1 (ko) 2017-02-03 2018-01-30 노광 장치

Publications (2)

Publication Number Publication Date
KR20210104172A KR20210104172A (ko) 2021-08-24
KR102458052B1 true KR102458052B1 (ko) 2022-10-24

Family

ID=61132430

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020217025777A Active KR102458052B1 (ko) 2017-02-03 2018-01-30 노광 장치
KR1020197025735A Active KR102291903B1 (ko) 2017-02-03 2018-01-30 노광 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020197025735A Active KR102291903B1 (ko) 2017-02-03 2018-01-30 노광 장치

Country Status (10)

Country Link
US (2) US11092903B2 (enExample)
EP (1) EP3577525A1 (enExample)
JP (11) JP6883655B2 (enExample)
KR (2) KR102458052B1 (enExample)
CN (1) CN110268334B (enExample)
IL (1) IL268217B2 (enExample)
NL (1) NL2020344A (enExample)
SG (1) SG11201906413XA (enExample)
TW (2) TWI710861B (enExample)
WO (1) WO2018141713A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018141713A1 (en) * 2017-02-03 2018-08-09 Asml Netherlands B.V. Exposure apparatus
US11105611B2 (en) * 2018-05-15 2021-08-31 Applejack 199 L.P. Non-contact measurement of a stress in a film on substrate
JP7195411B2 (ja) * 2018-09-21 2022-12-23 エーエスエムエル ネザーランズ ビー．ブイ． 放射システム
CN111123667B (zh) * 2018-10-31 2021-09-24 上海微电子装备（集团）股份有限公司 光刻装置、光刻装置的垂向控制方法及曝光方法
CN111830790A (zh) * 2019-04-17 2020-10-27 上海微电子装备（集团）股份有限公司 一种气浴装置和光刻机
CN115023655A (zh) * 2020-02-06 2022-09-06 Asml荷兰有限公司 使用双平台光刻设备的方法以及光刻设备
WO2021160423A1 (en) * 2020-02-14 2021-08-19 Asml Holding N.V. Reticle gripper damper and isolation system for lithographic apparatuses
NL2025372A (en) 2020-04-20 2020-05-07 Asml Netherlands Bv System, lithographic apparatus and method
JP7445532B2 (ja) * 2020-06-15 2024-03-07 東京エレクトロン株式会社 実行装置及び実行方法
DE102020209638B3 (de) * 2020-07-30 2021-11-11 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zum bestimmen einer ausrichtung einer fotomaske auf einem probentisch, der entlang zumindest einer achse verschiebbar und um zumindest eine achse drehbar ist
WO2022215692A1 (ja) * 2021-04-09 2022-10-13 株式会社ニコン 露光装置、デバイス製造方法、フラットパネルディスプレイの製造方法および露光方法
WO2022240477A1 (en) * 2021-05-13 2022-11-17 Ohio State Innovation Foundation IN SITU DAMAGE FREE ETCHING OF Ga 2O3 USING Ga FLUX FOR FABRICATING HIGH ASPECT RATIO 3D STRUCTURES
WO2023138916A1 (en) * 2022-01-21 2023-07-27 Asml Netherlands B.V. Systems and methods for inspecting a portion of a lithography apparatus
DE102022108279A1 (de) 2022-04-06 2023-10-12 Testo SE & Co. KGaA Automatische Messorterkennung eines Loggers

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080128642A1 (en) * 2006-12-01 2008-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20100157274A1 (en) * 2008-12-19 2010-06-24 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP2011061128A (ja) * 2009-09-14 2011-03-24 Nikon Corp 露光装置及びデバイス製造方法

Family Cites Families (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100300618B1 (ko) * 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JP2832673B2 (ja) * 1993-10-29 1998-12-09 株式会社オーク製作所 露光装置およびワークの露光方法
EP0722123B1 (en) 1995-01-12 1999-04-14 Orc Manufacturing Co., Ltd. Apparatus and method for exposing of workpiece
US5677758A (en) 1995-02-09 1997-10-14 Mrs Technology, Inc. Lithography System using dual substrate stages
JP4029182B2 (ja) * 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP3303758B2 (ja) 1996-12-28 2002-07-22 キヤノン株式会社 投影露光装置及びデバイスの製造方法
JPH11224854A (ja) 1997-11-22 1999-08-17 Nikon Corp 露光装置及び露光方法、並びにデバイス製造方法
JP2002198303A (ja) 2000-12-27 2002-07-12 Nikon Corp 露光装置、光学特性計測方法、及びデバイス製造方法
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
JP4905617B2 (ja) 2001-05-28 2012-03-28 株式会社ニコン 露光方法及びデバイス製造方法
JP2003100612A (ja) 2001-09-26 2003-04-04 Nikon Corp 面位置検出装置、合焦装置の調整方法、面位置検出方法、露光装置及びデバイスの製造方法
JP4661015B2 (ja) 2001-09-26 2011-03-30 株式会社ニコン 波面収差測定装置及び波面収差測定方法、並びに、露光装置及びデバイスの製造方法
US6987555B2 (en) * 2002-04-23 2006-01-17 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP3966211B2 (ja) 2002-05-08 2007-08-29 株式会社ニコン 露光方法、露光装置及びデバイス製造方法
JP2004260117A (ja) 2003-02-27 2004-09-16 Nikon Corp ステージ装置、露光装置、及びデバイス製造方法
JP2005017734A (ja) 2003-06-26 2005-01-20 Nikon Corp 投影光学系、露光装置、およびデバイス製造方法
JP4023416B2 (ja) 2003-08-19 2007-12-19 株式会社デンソー 冷却器
JP2005064373A (ja) 2003-08-19 2005-03-10 Nikon Corp 露光装置
JP3870182B2 (ja) 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005086093A (ja) 2003-09-10 2005-03-31 Canon Inc 露光装置及びステージ装置の制御方法
WO2005064382A1 (ja) 2003-12-25 2005-07-14 Nikon Corporation 光学素子の保持装置、鏡筒、露光装置、及びデバイスの製造方法
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8208119B2 (en) 2004-02-04 2012-06-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20070247640A1 (en) 2004-03-30 2007-10-25 Nikon Corporation Exposure Apparatus, Exposure Method and Device Manufacturing Method, and Surface Shape Detection Unit
JP2005322755A (ja) 2004-05-07 2005-11-17 Nikon Corp 誤差検出方法、位置合わせ方法、露光方法
JP2005322721A (ja) 2004-05-07 2005-11-17 Nikon Corp 情報保存方法及び情報使用方法
JP2006005140A (ja) 2004-06-17 2006-01-05 Nikon Corp 位置計測方法及びその装置、露光方法及びその装置、並びにデバイス製造方法
US7345736B2 (en) * 2004-06-21 2008-03-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7308368B2 (en) 2004-09-15 2007-12-11 Asml Netherlands B.V. Method and apparatus for vibration detection, method and apparatus for vibration analysis, lithographic apparatus, device manufacturing method, and computer program
US20060092399A1 (en) * 2004-10-29 2006-05-04 Asml Netherlands B.V. Lithographic apparatus, a control system for controlling a lithographic apparatus, and a device manufacturing method
US7528931B2 (en) * 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006286747A (ja) 2005-03-31 2006-10-19 Sony Corp 位置合わせ方法、その装置、プロセス制御装置およびプログラム
JP4609167B2 (ja) 2005-04-13 2011-01-12 株式会社ニコン 露光システム、露光方法及びマイクロデバイスの製造方法
JP5105135B2 (ja) 2005-06-28 2012-12-19 株式会社ニコン 推定方法、露光方法、デバイス製造方法、検査方法、デバイス製造装置、及びプログラム
JP4632091B2 (ja) 2005-08-30 2011-02-16 株式会社ダイフク 物品搬送設備
JP4835087B2 (ja) 2005-09-30 2011-12-14 サンケン電気株式会社 Ｄｃ−ｄｃコンバータ
WO2007055237A1 (ja) 2005-11-09 2007-05-18 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
CN101300662B (zh) 2005-12-28 2012-05-09 株式会社尼康 图案形成方法及图案形成装置、以及元件制造方法
JP5370708B2 (ja) 2006-01-16 2013-12-18 株式会社ニコン 工具物体、計測装置及び露光装置、並びに計測方法及び調整方法
EP1983362A4 (en) 2006-02-07 2009-08-05 Nikon Corp catadioptric imaging system, exposure device, and device manufacturing method
EP3267259A1 (en) 2006-02-21 2018-01-10 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
KR101495471B1 (ko) 2006-02-21 2015-02-23 가부시키가이샤 니콘 패턴 형성 장치, 마크 검출 장치, 노광 장치, 패턴 형성 방법, 노광 방법 및 디바이스 제조 방법
JP2008004581A (ja) 2006-06-20 2008-01-10 Nikon Corp 露光装置及びセンサ
TWI622084B (zh) 2006-09-01 2018-04-21 Nikon Corp Mobile body driving method, moving body driving system, pattern forming method and device, exposure method and device, component manufacturing method, and correction method
JP5151989B2 (ja) 2006-11-09 2013-02-27 株式会社ニコン 保持装置、位置検出装置及び露光装置、並びにデバイス製造方法
US7804579B2 (en) 2007-06-21 2010-09-28 Asml Netherlands B.V. Control system, lithographic projection apparatus, method of controlling a support structure, and a computer program product
SG10201502625RA (en) 2007-07-18 2015-05-28 Nikon Corp Measuring Method, Stage Apparatus, And Exposure Apparatus
JP2009054737A (ja) 2007-08-24 2009-03-12 Nikon Corp マーク検出方法及び装置、位置制御方法及び装置、露光方法及び装置、並びにデバイス製造方法
US20090123874A1 (en) 2007-11-14 2009-05-14 Tadashi Nagayama Exposure method, exposure apparatus, and method for manufacturing device
NL1036180A1 (nl) 2007-11-20 2009-05-25 Asml Netherlands Bv Stage system, lithographic apparatus including such stage system, and correction method.
US8711327B2 (en) 2007-12-14 2014-04-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US20090174873A1 (en) 2007-12-17 2009-07-09 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
JP5177380B2 (ja) 2008-01-08 2013-04-03 ルネサスエレクトロニクス株式会社 位置ずれ補正装置および半導体装置の製造方法
JP2009170559A (ja) 2008-01-14 2009-07-30 Canon Inc 露光装置およびデバイス製造方法
JP2009302400A (ja) 2008-06-16 2009-12-24 Canon Inc 露光装置及びデバイス製造方法
US20100045949A1 (en) 2008-08-11 2010-02-25 Nikon Corporation Exposure apparatus, maintaining method and device fabricating method
JP2010212383A (ja) 2009-03-09 2010-09-24 Nikon Corp 露光方法、露光システム、及びデバイス製造方法
US20110096306A1 (en) 2009-09-28 2011-04-28 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
NL2006099A (en) * 2010-02-19 2011-08-22 Asml Netherlands Bv Calibration of lithographic apparatus.
KR20120116329A (ko) 2010-02-20 2012-10-22 가부시키가이샤 니콘 광원 최적화 방법, 노광 방법, 디바이스 제조 방법, 프로그램, 노광 장치, 리소그래피 시스템, 광원 평가 방법 및 광원 변조 방법
JP5988537B2 (ja) 2010-06-10 2016-09-07 株式会社ニコン 荷電粒子線露光装置及びデバイス製造方法
NL2007216A (en) 2010-09-08 2012-03-12 Asml Netherlands Bv Self-referencing interferometer, alignment system, and lithographic apparatus.
NL2009533A (en) * 2011-10-27 2013-05-07 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US9360772B2 (en) 2011-12-29 2016-06-07 Nikon Corporation Carrier method, exposure method, carrier system and exposure apparatus, and device manufacturing method
JP2013161992A (ja) 2012-02-06 2013-08-19 Nikon Corp 変形可能な反射光学素子、光学系、及び露光装置
JP5994970B2 (ja) 2012-02-10 2016-09-21 株式会社ニコン 瞳強度分布の調整方法、照明光学系およびその調整方法、露光装置、並びにデバイス製造方法
US20130250271A1 (en) 2012-02-17 2013-09-26 Nikon Corporation Stage assembly with secure device holder
US9323160B2 (en) 2012-04-10 2016-04-26 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium
JP5920610B2 (ja) 2012-09-11 2016-05-18 株式会社ニコン 瞳強度分布の設定方法、照明光学系およびその調整方法、露光装置、並びにデバイス製造方法
US9772564B2 (en) 2012-11-12 2017-09-26 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
JP2014120693A (ja) 2012-12-18 2014-06-30 Nikon Corp 液浸部材、露光装置、露光方法、デバイス製造方法、プログラム、及び記録媒体
JP6260847B2 (ja) 2013-02-23 2018-01-17 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
JP2015032800A (ja) 2013-08-07 2015-02-16 キヤノン株式会社 リソグラフィ装置、および物品製造方法
WO2015049087A1 (en) * 2013-10-02 2015-04-09 Asml Netherlands B.V. Methods & apparatus for obtaining diagnostic information relating to an industrial process
TWI710866B (zh) 2014-05-30 2020-11-21 日商尼康股份有限公司 用於微影步驟之電腦程式及電腦可讀取記錄媒體
CN106507684B (zh) 2014-06-16 2020-01-10 Asml荷兰有限公司 光刻设备、转移衬底的方法和器件制造方法
US10289007B2 (en) 2014-07-10 2019-05-14 Nikon Corporation Lithography tool having a reticle stage capable of dynamic reticle bending to compensate for distortion
JP6689602B2 (ja) 2014-12-22 2020-04-28 カール ツァイス マイクロスコーピー エルエルシー 荷電粒子ビームシステム及び方法
CN107278279B (zh) * 2015-02-23 2020-07-03 株式会社尼康 基板处理系统及基板处理方法、以及组件制造方法
NL2016298A (en) 2015-03-23 2016-09-30 Asml Netherlands Bv Lithographic apparatus, and device manufacturing method
JP6712411B2 (ja) * 2015-03-30 2020-06-24 株式会社ニコン 物体搬送装置、露光装置、フラットパネルディスプレイの製造方法、デバイス製造方法、物体搬送方法、及び露光方法
JP6566192B2 (ja) 2015-03-31 2019-08-28 株式会社ニコン 防振装置、露光装置、及びデバイス製造方法
CN116387602A (zh) 2016-10-12 2023-07-04 株式会社半导体能源研究所 正极活性物质粒子以及正极活性物质粒子的制造方法
WO2018141713A1 (en) 2017-02-03 2018-08-09 Asml Netherlands B.V. Exposure apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080128642A1 (en) * 2006-12-01 2008-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20100157274A1 (en) * 2008-12-19 2010-06-24 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
JP2011061128A (ja) * 2009-09-14 2011-03-24 Nikon Corp 露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
JP2019049728A (ja) 2019-03-28
JP6518831B2 (ja) 2019-05-22
CN110268334B (zh) 2024-10-29
TW202109209A (zh) 2021-03-01
JP6556929B2 (ja) 2019-08-07
JP2019015989A (ja) 2019-01-31
JP6620208B2 (ja) 2019-12-11
JP6518819B2 (ja) 2019-05-22
KR102291903B1 (ko) 2021-08-24
IL268217A (en) 2019-09-26
KR20210104172A (ko) 2021-08-24
JP6470856B2 (ja) 2019-02-13
US20210356876A1 (en) 2021-11-18
US12265337B2 (en) 2025-04-01
JP2019008323A (ja) 2019-01-17
TWI781467B (zh) 2022-10-21
JP2019056943A (ja) 2019-04-11
JP2019015991A (ja) 2019-01-31
US20190377270A1 (en) 2019-12-12
JP2018156100A (ja) 2018-10-04
TWI710861B (zh) 2020-11-21
CN110268334A (zh) 2019-09-20
TW201835687A (zh) 2018-10-01
NL2020344A (en) 2018-08-14
JP2020506418A (ja) 2020-02-27
IL268217B2 (en) 2025-09-01
JP6775040B2 (ja) 2020-10-28
JP2019105854A (ja) 2019-06-27
US11092903B2 (en) 2021-08-17
JP6674989B2 (ja) 2020-04-01
JP2019015990A (ja) 2019-01-31
JP6883655B2 (ja) 2021-06-09
IL268217B1 (en) 2025-05-01
JP6741736B2 (ja) 2020-08-19
KR20190112795A (ko) 2019-10-07
JP2019015988A (ja) 2019-01-31
JP2018124557A (ja) 2018-08-09
JP6557394B2 (ja) 2019-08-07
WO2018141713A1 (en) 2018-08-09
EP3577525A1 (en) 2019-12-11
JP7041643B2 (ja) 2022-03-24
SG11201906413XA (en) 2019-08-27

Similar Documents

Publication Publication Date Title
KR102458052B1 (ko) 노광 장치
TWI408771B (zh) 可移動支撐，位置控制系統，微影裝置及可交換物件位置之控制方法
CN108475025B (zh) 光刻设备和操作光刻设备的方法
JP5600138B2 (ja) 位置決めデバイス、位置決め方法及びデバイス製造方法
JP6637188B2 (ja) 基板ハンドリングシステムおよびリソグラフィ装置
TW201928526A (zh) 馬達、雙行程載台及微影設備
JP2007189217A (ja) リソグラフィ装置およびデバイス製造方法

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20210813

Application number text: 1020197025735

Filing date: 20190902

PA0201 Request for examination
PG1501 Laying open of application
E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20211128

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20220720

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20221019

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20221020

End annual number: 3

Start annual number: 1

PG1601 Publication of registration