NL2020344A - Exposure apparatus - Google Patents

Exposure apparatus Download PDF

Info

Publication number
NL2020344A
NL2020344A NL2020344A NL2020344A NL2020344A NL 2020344 A NL2020344 A NL 2020344A NL 2020344 A NL2020344 A NL 2020344A NL 2020344 A NL2020344 A NL 2020344A NL 2020344 A NL2020344 A NL 2020344A
Authority
NL
Netherlands
Prior art keywords
substrate
holder
sensor
exposure
substrate holder
Prior art date
Application number
NL2020344A
Other languages
English (en)
Dutch (nl)
Inventor
Kanehara Junichi
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of NL2020344A publication Critical patent/NL2020344A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7046—Strategy, e.g. mark, sensor or wavelength selection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
    • G03F9/7034—Leveling
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Multimedia (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electron Beam Exposure (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)
  • Water Treatment By Sorption (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Liquid Crystal Substances (AREA)
NL2020344A 2017-02-03 2018-01-30 Exposure apparatus NL2020344A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP17154551 2017-02-03
EP17169025 2017-05-02
EP17193990 2017-09-29
EP17201092 2017-11-10

Publications (1)

Publication Number Publication Date
NL2020344A true NL2020344A (en) 2018-08-14

Family

ID=61132430

Family Applications (1)

Application Number Title Priority Date Filing Date
NL2020344A NL2020344A (en) 2017-02-03 2018-01-30 Exposure apparatus

Country Status (10)

Country Link
US (2) US11092903B2 (enExample)
EP (1) EP3577525A1 (enExample)
JP (11) JP6883655B2 (enExample)
KR (2) KR102458052B1 (enExample)
CN (1) CN110268334B (enExample)
IL (1) IL268217B2 (enExample)
NL (1) NL2020344A (enExample)
SG (1) SG11201906413XA (enExample)
TW (2) TWI710861B (enExample)
WO (1) WO2018141713A1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201906413XA (en) * 2017-02-03 2019-08-27 Asml Netherlands Bv Exposure apparatus
US11105611B2 (en) * 2018-05-15 2021-08-31 Applejack 199 L.P. Non-contact measurement of a stress in a film on substrate
CN112740111A (zh) * 2018-09-21 2021-04-30 Asml荷兰有限公司 辐射系统
CN111123667B (zh) * 2018-10-31 2021-09-24 上海微电子装备（集团）股份有限公司 光刻装置、光刻装置的垂向控制方法及曝光方法
CN111830790A (zh) * 2019-04-17 2020-10-27 上海微电子装备（集团）股份有限公司 一种气浴装置和光刻机
US12153354B2 (en) * 2020-02-06 2024-11-26 Asml Netherlands B.V. Method of using a dual stage lithographic apparatus and lithographic apparatus
KR20220142444A (ko) 2020-02-14 2022-10-21 에이에스엠엘 홀딩 엔.브이. 리소그래피 장치를 위한 레티클 그리퍼 댐퍼 및 격리 시스템
NL2025372A (en) 2020-04-20 2020-05-07 Asml Netherlands Bv System, lithographic apparatus and method
JP7445532B2 (ja) * 2020-06-15 2024-03-07 東京エレクトロン株式会社 実行装置及び実行方法
DE102020209638B3 (de) * 2020-07-30 2021-11-11 Carl Zeiss Smt Gmbh Verfahren und vorrichtung zum bestimmen einer ausrichtung einer fotomaske auf einem probentisch, der entlang zumindest einer achse verschiebbar und um zumindest eine achse drehbar ist
KR20230150880A (ko) * 2021-04-09 2023-10-31 가부시키가이샤 니콘 노광 장치, 디바이스 제조 방법, 플랫 패널 디스플레이의 제조 방법 및 노광 방법
US20240249954A1 (en) * 2021-05-13 2024-07-25 Ohio State Innovation Foundation IN SITU DAMAGE FREE ETCHING OF Ga2O3 USING Ga FLUX FOR FABRICATING HIGH ASPECT RATIO 3D STRUCTURES
WO2023138916A1 (en) * 2022-01-21 2023-07-27 Asml Netherlands B.V. Systems and methods for inspecting a portion of a lithography apparatus
DE102022108279A1 (de) 2022-04-06 2023-10-12 Testo SE & Co. KGaA Automatische Messorterkennung eines Loggers

Family Cites Families (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100300618B1 (ko) * 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JP2832673B2 (ja) * 1993-10-29 1998-12-09 株式会社オーク製作所 露光装置およびワークの露光方法
EP0722123B1 (en) 1995-01-12 1999-04-14 Orc Manufacturing Co., Ltd. Apparatus and method for exposing of workpiece
US5677758A (en) 1995-02-09 1997-10-14 Mrs Technology, Inc. Lithography System using dual substrate stages
JP4029182B2 (ja) * 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP3303758B2 (ja) 1996-12-28 2002-07-22 キヤノン株式会社 投影露光装置及びデバイスの製造方法
JPH11224854A (ja) 1997-11-22 1999-08-17 Nikon Corp 露光装置及び露光方法、並びにデバイス製造方法
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
JP2002198303A (ja) 2000-12-27 2002-07-12 Nikon Corp 露光装置、光学特性計測方法、及びデバイス製造方法
JP4905617B2 (ja) 2001-05-28 2012-03-28 株式会社ニコン 露光方法及びデバイス製造方法
JP4661015B2 (ja) 2001-09-26 2011-03-30 株式会社ニコン 波面収差測定装置及び波面収差測定方法、並びに、露光装置及びデバイスの製造方法
JP2003100612A (ja) 2001-09-26 2003-04-04 Nikon Corp 面位置検出装置、合焦装置の調整方法、面位置検出方法、露光装置及びデバイスの製造方法
US6987555B2 (en) * 2002-04-23 2006-01-17 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP3966211B2 (ja) 2002-05-08 2007-08-29 株式会社ニコン 露光方法、露光装置及びデバイス製造方法
JP2004260117A (ja) 2003-02-27 2004-09-16 Nikon Corp ステージ装置、露光装置、及びデバイス製造方法
JP2005017734A (ja) 2003-06-26 2005-01-20 Nikon Corp 投影光学系、露光装置、およびデバイス製造方法
JP4023416B2 (ja) 2003-08-19 2007-12-19 株式会社デンソー 冷却器
JP2005064373A (ja) 2003-08-19 2005-03-10 Nikon Corp 露光装置
JP3870182B2 (ja) 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005086093A (ja) 2003-09-10 2005-03-31 Canon Inc 露光装置及びステージ装置の制御方法
US7697222B2 (en) 2003-12-25 2010-04-13 Nikon Corporation Apparatus for holding optical element, barrel, exposure apparatus, and device producing method
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
US8208119B2 (en) 2004-02-04 2012-06-26 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
WO2005096354A1 (ja) 2004-03-30 2005-10-13 Nikon Corporation 露光装置、露光方法及びデバイス製造方法、並びに面形状検出装置
JP2005322755A (ja) 2004-05-07 2005-11-17 Nikon Corp 誤差検出方法、位置合わせ方法、露光方法
JP2005322721A (ja) 2004-05-07 2005-11-17 Nikon Corp 情報保存方法及び情報使用方法
JP2006005140A (ja) 2004-06-17 2006-01-05 Nikon Corp 位置計測方法及びその装置、露光方法及びその装置、並びにデバイス製造方法
US7345736B2 (en) * 2004-06-21 2008-03-18 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7308368B2 (en) 2004-09-15 2007-12-11 Asml Netherlands B.V. Method and apparatus for vibration detection, method and apparatus for vibration analysis, lithographic apparatus, device manufacturing method, and computer program
US20060092399A1 (en) * 2004-10-29 2006-05-04 Asml Netherlands B.V. Lithographic apparatus, a control system for controlling a lithographic apparatus, and a device manufacturing method
US7528931B2 (en) * 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006286747A (ja) 2005-03-31 2006-10-19 Sony Corp 位置合わせ方法、その装置、プロセス制御装置およびプログラム
JP4609167B2 (ja) 2005-04-13 2011-01-12 株式会社ニコン 露光システム、露光方法及びマイクロデバイスの製造方法
JP5105135B2 (ja) 2005-06-28 2012-12-19 株式会社ニコン 推定方法、露光方法、デバイス製造方法、検査方法、デバイス製造装置、及びプログラム
JP4632091B2 (ja) 2005-08-30 2011-02-16 株式会社ダイフク 物品搬送設備
JP4835087B2 (ja) 2005-09-30 2011-12-14 サンケン電気株式会社 Ｄｃ−ｄｃコンバータ
JPWO2007055237A1 (ja) 2005-11-09 2009-04-30 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
CN102681368B (zh) 2005-12-28 2015-09-30 株式会社尼康 图案形成方法及图案形成装置、以及元件制造方法
JP5370708B2 (ja) 2006-01-16 2013-12-18 株式会社ニコン 工具物体、計測装置及び露光装置、並びに計測方法及び調整方法
WO2007091463A1 (ja) 2006-02-07 2007-08-16 Nikon Corporation 反射屈折結像光学系、露光装置、およびデバイス製造方法
EP2003679B1 (en) 2006-02-21 2016-11-16 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
CN102866591B (zh) 2006-02-21 2015-08-19 株式会社尼康 曝光装置及方法、以及元件制造方法
JP2008004581A (ja) 2006-06-20 2008-01-10 Nikon Corp 露光装置及びセンサ
KR101626245B1 (ko) 2006-09-01 2016-05-31 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 디바이스 제조 방법, 그리고 캘리브레이션 방법
JP5151989B2 (ja) * 2006-11-09 2013-02-27 株式会社ニコン 保持装置、位置検出装置及び露光装置、並びにデバイス製造方法
US7683351B2 (en) * 2006-12-01 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7804579B2 (en) 2007-06-21 2010-09-28 Asml Netherlands B.V. Control system, lithographic projection apparatus, method of controlling a support structure, and a computer program product
KR101614666B1 (ko) 2007-07-18 2016-04-21 가부시키가이샤 니콘 계측 방법, 스테이지 장치, 및 노광 장치
JP2009054737A (ja) 2007-08-24 2009-03-12 Nikon Corp マーク検出方法及び装置、位置制御方法及び装置、露光方法及び装置、並びにデバイス製造方法
US20090123874A1 (en) 2007-11-14 2009-05-14 Tadashi Nagayama Exposure method, exposure apparatus, and method for manufacturing device
NL1036180A1 (nl) 2007-11-20 2009-05-25 Asml Netherlands Bv Stage system, lithographic apparatus including such stage system, and correction method.
US8711327B2 (en) 2007-12-14 2014-04-29 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US20090174873A1 (en) 2007-12-17 2009-07-09 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
JP5177380B2 (ja) 2008-01-08 2013-04-03 ルネサスエレクトロニクス株式会社 位置ずれ補正装置および半導体装置の製造方法
JP2009170559A (ja) 2008-01-14 2009-07-30 Canon Inc 露光装置およびデバイス製造方法
JP2009302400A (ja) 2008-06-16 2009-12-24 Canon Inc 露光装置及びデバイス製造方法
TW201009895A (en) 2008-08-11 2010-03-01 Nikon Corp Exposure apparatus, maintaining method and device fabricating method
US8760629B2 (en) * 2008-12-19 2014-06-24 Nikon Corporation Exposure apparatus including positional measurement system of movable body, exposure method of exposing object including measuring positional information of movable body, and device manufacturing method that includes exposure method of exposing object, including measuring positional information of movable body
JP2010212383A (ja) 2009-03-09 2010-09-24 Nikon Corp 露光方法、露光システム、及びデバイス製造方法
JP5299638B2 (ja) 2009-09-14 2013-09-25 株式会社ニコン 露光装置及びデバイス製造方法
US20110096306A1 (en) 2009-09-28 2011-04-28 Nikon Corporation Stage apparatus, exposure apparatus, driving method, exposing method, and device fabricating method
NL2006099A (en) * 2010-02-19 2011-08-22 Asml Netherlands Bv Calibration of lithographic apparatus.
JP5842808B2 (ja) 2010-02-20 2016-01-13 株式会社ニコン 瞳強度分布を調整する方法
JP5988537B2 (ja) 2010-06-10 2016-09-07 株式会社ニコン 荷電粒子線露光装置及びデバイス製造方法
NL2007215A (en) 2010-09-08 2012-03-12 Asml Netherlands Bv Lithographic apparatus, device manufacturing method, and method of applying a pattern to a substrate.
NL2009533A (en) * 2011-10-27 2013-05-07 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
US9360772B2 (en) 2011-12-29 2016-06-07 Nikon Corporation Carrier method, exposure method, carrier system and exposure apparatus, and device manufacturing method
JP2013161992A (ja) 2012-02-06 2013-08-19 Nikon Corp 変形可能な反射光学素子、光学系、及び露光装置
JP5994970B2 (ja) 2012-02-10 2016-09-21 株式会社ニコン 瞳強度分布の調整方法、照明光学系およびその調整方法、露光装置、並びにデバイス製造方法
US20130250271A1 (en) 2012-02-17 2013-09-26 Nikon Corporation Stage assembly with secure device holder
US9323160B2 (en) 2012-04-10 2016-04-26 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium
WO2014042044A1 (ja) 2012-09-11 2014-03-20 株式会社ニコン 瞳輝度分布の設定方法
US9772564B2 (en) 2012-11-12 2017-09-26 Nikon Corporation Exposure apparatus and exposure method, and device manufacturing method
JP2014120693A (ja) 2012-12-18 2014-06-30 Nikon Corp 液浸部材、露光装置、露光方法、デバイス製造方法、プログラム、及び記録媒体
JP6260847B2 (ja) 2013-02-23 2018-01-17 株式会社ニコン 露光方法及び装置、並びにデバイス製造方法
JP2015032800A (ja) 2013-08-07 2015-02-16 キヤノン株式会社 リソグラフィ装置、および物品製造方法
KR102242414B1 (ko) * 2013-10-02 2021-04-21 에이에스엠엘 네델란즈 비.브이. 산업 공정과 관련된 진단 정보를 얻는 방법 및 장치
TWI710866B (zh) 2014-05-30 2020-11-21 日商尼康股份有限公司 用於微影步驟之電腦程式及電腦可讀取記錄媒體
KR101941596B1 (ko) 2014-06-16 2019-01-23 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치, 기판을 이송하는 방법 및 디바이스 제조 방법
US10289007B2 (en) 2014-07-10 2019-05-14 Nikon Corporation Lithography tool having a reticle stage capable of dynamic reticle bending to compensate for distortion
US10410828B2 (en) 2014-12-22 2019-09-10 Carl Zeiss Microscopy, Llc Charged particle beam system and methods
CN111610696A (zh) * 2015-02-23 2020-09-01 株式会社尼康 基板处理系统及基板处理方法、以及组件制造方法
NL2016298A (en) 2015-03-23 2016-09-30 Asml Netherlands Bv Lithographic apparatus, and device manufacturing method
CN107466381B (zh) * 2015-03-30 2021-03-09 株式会社尼康 物体搬运装置及方法、曝光装置及方法、平板显示器的制造方法、元件制造方法
JP6566192B2 (ja) 2015-03-31 2019-08-28 株式会社ニコン 防振装置、露光装置、及びデバイス製造方法
CN116387602A (zh) 2016-10-12 2023-07-04 株式会社半导体能源研究所 正极活性物质粒子以及正极活性物质粒子的制造方法
SG11201906413XA (en) 2017-02-03 2019-08-27 Asml Netherlands Bv Exposure apparatus

Also Published As

Publication number Publication date
US20210356876A1 (en) 2021-11-18
JP2019049728A (ja) 2019-03-28
TW202109209A (zh) 2021-03-01
IL268217A (en) 2019-09-26
JP6883655B2 (ja) 2021-06-09
IL268217B1 (en) 2025-05-01
US12265337B2 (en) 2025-04-01
US20190377270A1 (en) 2019-12-12
TWI710861B (zh) 2020-11-21
JP6518819B2 (ja) 2019-05-22
JP6674989B2 (ja) 2020-04-01
KR20210104172A (ko) 2021-08-24
IL268217B2 (en) 2025-09-01
WO2018141713A1 (en) 2018-08-09
JP6556929B2 (ja) 2019-08-07
TW201835687A (zh) 2018-10-01
US11092903B2 (en) 2021-08-17
JP2018156100A (ja) 2018-10-04
JP2020506418A (ja) 2020-02-27
TWI781467B (zh) 2022-10-21
JP6470856B2 (ja) 2019-02-13
JP2019015988A (ja) 2019-01-31
CN110268334A (zh) 2019-09-20
JP2019015991A (ja) 2019-01-31
JP2019105854A (ja) 2019-06-27
JP6620208B2 (ja) 2019-12-11
SG11201906413XA (en) 2019-08-27
JP2018124557A (ja) 2018-08-09
JP2019056943A (ja) 2019-04-11
JP6518831B2 (ja) 2019-05-22
JP6741736B2 (ja) 2020-08-19
EP3577525A1 (en) 2019-12-11
CN110268334B (zh) 2024-10-29
KR102458052B1 (ko) 2022-10-24
KR20190112795A (ko) 2019-10-07
JP2019008323A (ja) 2019-01-17
JP7041643B2 (ja) 2022-03-24
KR102291903B1 (ko) 2021-08-24
JP6557394B2 (ja) 2019-08-07
JP2019015990A (ja) 2019-01-31
JP6775040B2 (ja) 2020-10-28
JP2019015989A (ja) 2019-01-31

Similar Documents

Publication Publication Date Title
NL2020344A (en) Exposure apparatus
TWI412875B (zh) 用於浸沒式微影術的晶圓桌
TWI572994B (zh) Exposure method and exposure apparatus, and component manufacturing method
JPWO2007043535A1 (ja) 光学特性計測方法、露光方法及びデバイス製造方法、並びに検査装置及び計測方法
CN102298267A (zh) 光刻设备
JP2006060152A (ja) 光学特性測定装置、ステージ装置及び露光装置
JP2003021914A (ja) 光学特性測定方法、光学特性測定装置、及び露光装置