KR102282866B1 - 표시 장치, 및 표시 장치를 포함하는 전자 장치 - Google Patents

표시 장치, 및 표시 장치를 포함하는 전자 장치 Download PDF

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KR102282866B1
KR102282866B1 KR1020207007826A KR20207007826A KR102282866B1 KR 102282866 B1 KR102282866 B1 KR 102282866B1 KR 1020207007826 A KR1020207007826 A KR 1020207007826A KR 20207007826 A KR20207007826 A KR 20207007826A KR 102282866 B1 KR102282866 B1 KR 102282866B1
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insulating film
film
transistor
electrode
layer
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KR20200032261A (ko
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야스하루 호사카
유키노리 시마
겐이치 오카자키
슌페이 야마자키
šœ페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13454—Drivers integrated on the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H01L27/1214—
    • H01L27/1225—
    • H01L27/1248—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
KR1020207007826A 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치 Active KR102282866B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217022971A KR102368865B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2012161344 2012-07-20
JPJP-P-2012-161344 2012-07-20
PCT/JP2013/069456 WO2014014039A1 (en) 2012-07-20 2013-07-10 Display device and electronic device including the display device
KR1020187038087A KR102093060B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치

Related Parent Applications (1)

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KR1020187038087A Division KR102093060B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치

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KR1020217022971A Division KR102368865B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치

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KR20200032261A KR20200032261A (ko) 2020-03-25
KR102282866B1 true KR102282866B1 (ko) 2021-07-27

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KR1020257034910A Pending KR20250154556A (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치
KR1020227006185A Active KR102505680B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치
KR1020187038087A Active KR102093060B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치
KR1020237006749A Active KR102705677B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치
KR1020247029906A Active KR102878532B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치
KR1020207007826A Active KR102282866B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치
KR1020157001433A Active KR102081468B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치
KR1020217022971A Active KR102368865B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치

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KR1020257034910A Pending KR20250154556A (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치
KR1020227006185A Active KR102505680B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치
KR1020187038087A Active KR102093060B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치
KR1020237006749A Active KR102705677B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치
KR1020247029906A Active KR102878532B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치

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KR1020157001433A Active KR102081468B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치
KR1020217022971A Active KR102368865B1 (ko) 2012-07-20 2013-07-10 표시 장치, 및 표시 장치를 포함하는 전자 장치

Country Status (7)

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US (8) US9298057B2 (enExample)
JP (11) JP6208485B2 (enExample)
KR (8) KR20250154556A (enExample)
CN (2) CN104488016B (enExample)
DE (1) DE112013003609B4 (enExample)
TW (6) TWI666497B (enExample)
WO (1) WO2014014039A1 (enExample)

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WO2014013958A1 (en) 2012-07-20 2014-01-23 Semiconductor Energy Laboratory Co., Ltd. Display device
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JP6219562B2 (ja) 2012-10-30 2017-10-25 株式会社半導体エネルギー研究所 表示装置及び電子機器
US9519198B2 (en) * 2012-11-21 2016-12-13 Sharp Kabushiki Kaisha Liquid crystal display device
WO2014103901A1 (en) 2012-12-25 2014-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6198434B2 (ja) 2013-04-11 2017-09-20 株式会社半導体エネルギー研究所 表示装置及び電子機器
JP2015055767A (ja) * 2013-09-12 2015-03-23 株式会社ジャパンディスプレイ 液晶表示パネル
JP6425877B2 (ja) * 2013-09-26 2018-11-21 株式会社ジャパンディスプレイ 表示素子およびその製造方法
TWI666770B (zh) 2013-12-19 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置
CN103676330B (zh) * 2013-12-23 2017-02-01 合肥京东方光电科技有限公司 阵列基板及显示装置
KR102234434B1 (ko) * 2013-12-27 2021-04-02 삼성디스플레이 주식회사 표시패널 및 그 제조방법
TWI663726B (zh) 2014-05-30 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 半導體裝置、模組及電子裝置
TWI588978B (zh) * 2014-08-18 2017-06-21 群創光電股份有限公司 薄膜電晶體及顯示面板
KR102225787B1 (ko) * 2014-10-10 2021-03-10 삼성전자주식회사 이미지 센서 및 그 제조 방법
KR20160114511A (ko) 2015-03-24 2016-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US9806200B2 (en) 2015-03-27 2017-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102381082B1 (ko) * 2015-07-31 2022-03-30 엘지디스플레이 주식회사 액정 표시 장치
KR102457205B1 (ko) * 2015-08-31 2022-10-20 엘지디스플레이 주식회사 편광 제어 패널, 이의 제조 방법 및 이를 이용한 입체 영상 표시 장치
WO2017087823A1 (en) 2015-11-18 2017-05-26 Mir Kalim U Super-resolution sequencing
US10714633B2 (en) 2015-12-15 2020-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
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WO2017190271A1 (zh) * 2016-05-03 2017-11-09 博立多媒体控股有限公司 具有显示和输入功能的电子产品
KR102570314B1 (ko) * 2016-06-08 2023-08-24 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN106098697B (zh) * 2016-06-15 2019-04-02 深圳市华星光电技术有限公司 微发光二极管显示面板及其制作方法
US10586495B2 (en) * 2016-07-22 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
CN106057828A (zh) * 2016-08-12 2016-10-26 京东方科技集团股份有限公司 一种基板及其制备方法、显示面板
CN108666342B (zh) * 2017-03-31 2021-02-09 京东方科技集团股份有限公司 一种显示面板及制作方法、显示装置
WO2018189714A2 (en) * 2017-04-14 2018-10-18 3M Innovative Properties Company Durable low emissivity window film constructions
CN107945728A (zh) * 2017-12-15 2018-04-20 京东方科技集团股份有限公司 一种显示基板、显示基板的制作方法及显示装置
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