KR102147547B1 - 반도체 장치 및 시프트 레지스터 - Google Patents

반도체 장치 및 시프트 레지스터 Download PDF

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KR102147547B1
KR102147547B1 KR1020130026598A KR20130026598A KR102147547B1 KR 102147547 B1 KR102147547 B1 KR 102147547B1 KR 1020130026598 A KR1020130026598 A KR 1020130026598A KR 20130026598 A KR20130026598 A KR 20130026598A KR 102147547 B1 KR102147547 B1 KR 102147547B1
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transistor
logic circuit
drain
source
electrodes
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KR20130105480A (ko
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슌페이 야마자키
šœ페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0286—Details of a shift registers arranged for use in a driving circuit

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Shift Register Type Memory (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
KR1020130026598A 2012-03-14 2013-03-13 반도체 장치 및 시프트 레지스터 Active KR102147547B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2012-057282 2012-03-14
JP2012057282 2012-03-14
JP2012125685 2012-06-01
JPJP-P-2012-125685 2012-06-01

Publications (2)

Publication Number Publication Date
KR20130105480A KR20130105480A (ko) 2013-09-25
KR102147547B1 true KR102147547B1 (ko) 2020-08-24

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KR1020130026598A Active KR102147547B1 (ko) 2012-03-14 2013-03-13 반도체 장치 및 시프트 레지스터

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Country Link
US (1) US9058892B2 (enExample)
JP (1) JP2014007731A (enExample)
KR (1) KR102147547B1 (enExample)
TW (1) TWI576690B (enExample)

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US9467047B2 (en) * 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
TWI646782B (zh) * 2014-04-11 2019-01-01 日商半導體能源研究所股份有限公司 保持電路、保持電路的驅動方法以及包括保持電路的半導體裝置
KR102727602B1 (ko) 2014-10-10 2024-11-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로, 처리 유닛, 전자 부품, 전자 기기, 및 반도체 장치
US9438234B2 (en) * 2014-11-21 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device including logic circuit
US10038402B2 (en) * 2015-10-30 2018-07-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10177142B2 (en) 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device
CN110097917B (zh) * 2018-01-30 2021-03-30 长鑫存储技术有限公司 存储单元的电容测试装置、方法及半导体存储器
CN108398837B (zh) * 2018-03-08 2020-11-06 惠科股份有限公司 阵列基板及显示面板
WO2020161552A1 (ja) 2019-02-05 2020-08-13 株式会社半導体エネルギー研究所 表示装置および電子機器

Citations (2)

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