JP2014007731A - 半導体装置及びシフトレジスタ - Google Patents

半導体装置及びシフトレジスタ Download PDF

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Publication number
JP2014007731A
JP2014007731A JP2013046405A JP2013046405A JP2014007731A JP 2014007731 A JP2014007731 A JP 2014007731A JP 2013046405 A JP2013046405 A JP 2013046405A JP 2013046405 A JP2013046405 A JP 2013046405A JP 2014007731 A JP2014007731 A JP 2014007731A
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JP
Japan
Prior art keywords
transistor
logic circuit
input terminal
power supply
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2013046405A
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English (en)
Japanese (ja)
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JP2014007731A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2013046405A priority Critical patent/JP2014007731A/ja
Publication of JP2014007731A publication Critical patent/JP2014007731A/ja
Publication of JP2014007731A5 publication Critical patent/JP2014007731A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0286—Details of a shift registers arranged for use in a driving circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Shift Register Type Memory (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
JP2013046405A 2012-03-14 2013-03-08 半導体装置及びシフトレジスタ Withdrawn JP2014007731A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013046405A JP2014007731A (ja) 2012-03-14 2013-03-08 半導体装置及びシフトレジスタ

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2012057282 2012-03-14
JP2012057282 2012-03-14
JP2012125685 2012-06-01
JP2012125685 2012-06-01
JP2013046405A JP2014007731A (ja) 2012-03-14 2013-03-08 半導体装置及びシフトレジスタ

Publications (2)

Publication Number Publication Date
JP2014007731A true JP2014007731A (ja) 2014-01-16
JP2014007731A5 JP2014007731A5 (enExample) 2016-04-21

Family

ID=49157646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013046405A Withdrawn JP2014007731A (ja) 2012-03-14 2013-03-08 半導体装置及びシフトレジスタ

Country Status (4)

Country Link
US (1) US9058892B2 (enExample)
JP (1) JP2014007731A (enExample)
KR (1) KR102147547B1 (enExample)
TW (1) TWI576690B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015155633A1 (en) * 2014-04-11 2015-10-15 Semiconductor Energy Laboratory Co., Ltd. Holding circuit, driving method of the holding circuit, and semiconductor device including the holding circuit
JP2016105590A (ja) * 2014-11-21 2016-06-09 株式会社半導体エネルギー研究所 論理回路、および論理回路を有する半導体装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9467047B2 (en) * 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
KR102727602B1 (ko) 2014-10-10 2024-11-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로, 처리 유닛, 전자 부품, 전자 기기, 및 반도체 장치
US10038402B2 (en) * 2015-10-30 2018-07-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10177142B2 (en) 2015-12-25 2019-01-08 Semiconductor Energy Laboratory Co., Ltd. Circuit, logic circuit, processor, electronic component, and electronic device
CN110097917B (zh) * 2018-01-30 2021-03-30 长鑫存储技术有限公司 存储单元的电容测试装置、方法及半导体存储器
CN108398837B (zh) * 2018-03-08 2020-11-06 惠科股份有限公司 阵列基板及显示面板
WO2020161552A1 (ja) 2019-02-05 2020-08-13 株式会社半導体エネルギー研究所 表示装置および電子機器

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011171723A (ja) * 2010-01-20 2011-09-01 Semiconductor Energy Lab Co Ltd 信号処理回路、及び信号処理回路の駆動方法
JP2012048806A (ja) * 2010-07-27 2012-03-08 Semiconductor Energy Lab Co Ltd 半導体装置

Family Cites Families (166)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025269A (ja) 1983-07-21 1985-02-08 Hitachi Ltd 半導体記憶素子
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPS62177794A (ja) 1986-01-31 1987-08-04 Hitachi Ltd 半導体メモリセル
JP2689416B2 (ja) 1986-08-18 1997-12-10 日本電気株式会社 フリツプフロツプ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
US4809225A (en) 1987-07-02 1989-02-28 Ramtron Corporation Memory cell with volatile and non-volatile portions having ferroelectric capacitors
JPH03192915A (ja) 1989-12-22 1991-08-22 Nec Corp フリップフロップ
JPH05110392A (ja) 1991-10-16 1993-04-30 Hitachi Ltd 状態保持回路を具備する集積回路
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
US5539279A (en) 1993-06-23 1996-07-23 Hitachi, Ltd. Ferroelectric memory
JPH07147530A (ja) 1993-11-24 1995-06-06 Mitsubishi Electric Corp ラッチ回路及びマスタースレーブ型フリップフロップ回路
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
KR100394896B1 (ko) 1995-08-03 2003-11-28 코닌클리케 필립스 일렉트로닉스 엔.브이. 투명스위칭소자를포함하는반도체장치
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
GB9614800D0 (en) 1996-07-13 1996-09-04 Plessey Semiconductors Ltd Programmable logic arrays
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000077982A (ja) 1998-08-27 2000-03-14 Kobe Steel Ltd 半導体集積回路
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP3955409B2 (ja) 1999-03-17 2007-08-08 株式会社ルネサステクノロジ 半導体記憶装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
US6483363B1 (en) * 2000-09-15 2002-11-19 Intel Corporation Storage element with stock node capacitive load
US6570801B2 (en) 2000-10-27 2003-05-27 Kabushiki Kaisha Toshiba Semiconductor memory having refresh function
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
EP1443130B1 (en) 2001-11-05 2011-09-28 Japan Science and Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
US6944045B2 (en) 2001-11-19 2005-09-13 Rohm Co., Ltd. Data holding apparatus and data read out method
JP4091301B2 (ja) 2001-12-28 2008-05-28 富士通株式会社 半導体集積回路および半導体メモリ
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
JP3940014B2 (ja) 2002-03-29 2007-07-04 富士通株式会社 半導体集積回路、無線タグ、および非接触型ｉｃカード
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US6998722B2 (en) 2002-07-08 2006-02-14 Viciciv Technology Semiconductor latches and SRAM devices
JP3560596B2 (ja) 2002-08-22 2004-09-02 沖電気工業株式会社 演算装置及びデータの読出方法
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
US6788567B2 (en) 2002-12-02 2004-09-07 Rohm Co., Ltd. Data holding device and data holding method
JP3692450B2 (ja) 2002-12-25 2005-09-07 松下電器産業株式会社 不揮発性ラッチ回路及びその駆動方法
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US6972986B2 (en) 2004-02-03 2005-12-06 Kilopass Technologies, Inc. Combination field programmable gate array allowing dynamic reprogrammability and non-votatile programmability based upon transistor gate oxide breakdown
US7064973B2 (en) 2004-02-03 2006-06-20 Klp International, Ltd. Combination field programmable gate array allowing dynamic reprogrammability
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US20070194379A1 (en) 2004-03-12 2007-08-23 Japan Science And Technology Agency Amorphous Oxide And Thin Film Transistor
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
JP2005323295A (ja) 2004-05-11 2005-11-17 Asahi Kasei Microsystems Kk ラッチ回路及びフリップフロップ回路
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006050208A (ja) 2004-08-04 2006-02-16 Denso Corp 電源瞬断対応論理回路
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US20060095975A1 (en) 2004-09-03 2006-05-04 Takayoshi Yamada Semiconductor device
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7374984B2 (en) 2004-10-29 2008-05-20 Randy Hoffman Method of forming a thin film component
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
JP5053537B2 (ja) 2004-11-10 2012-10-17 キヤノン株式会社 非晶質酸化物を利用した半導体デバイス
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
EP2453480A2 (en) 2004-11-10 2012-05-16 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
AU2005302963B2 (en) 2004-11-10 2009-07-02 Cannon Kabushiki Kaisha Light-emitting device
EP1815530B1 (en) 2004-11-10 2021-02-17 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
DE102004055006B4 (de) * 2004-11-15 2012-09-13 Infineon Technologies Ag Flipflop mit zusätzlicher Zustandsspeicherung bei Abschaltung
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI412138B (zh) 2005-01-28 2013-10-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI481024B (zh) 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
JP2007013011A (ja) 2005-07-01 2007-01-18 Seiko Epson Corp 強誘電体メモリ装置及び表示用駆動ｉｃ
KR100702310B1 (ko) 2005-07-21 2007-03-30 주식회사 하이닉스반도체 비휘발성 래치 회로 및 이를 포함하는 시스템 온 칩
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4560502B2 (ja) 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
JP2007125823A (ja) 2005-11-04 2007-05-24 Seiko Epson Corp 液体吐出装置及び液体吐出部の駆動方法
CN101667544B (zh) 2005-11-15 2012-09-05 株式会社半导体能源研究所 半导体器件及其制造方法
JP5364235B2 (ja) 2005-12-02 2013-12-11 株式会社半導体エネルギー研究所 表示装置
US8004481B2 (en) 2005-12-02 2011-08-23 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
WO2007073001A1 (en) 2005-12-22 2007-06-28 Showa Denko K.K. Light-emitting diode and method for fabricant thereof
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4954639B2 (ja) 2006-08-25 2012-06-20 パナソニック株式会社 ラッチ回路及びこれを備えた半導体集積回路
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
JP4297159B2 (ja) 2006-12-08 2009-07-15 ソニー株式会社 フリップフロップおよび半導体集積回路
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
JP5508662B2 (ja) 2007-01-12 2014-06-04 株式会社半導体エネルギー研究所 表示装置
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
US8274078B2 (en) 2007-04-25 2012-09-25 Canon Kabushiki Kaisha Metal oxynitride semiconductor containing zinc
JP5294651B2 (ja) 2007-05-18 2013-09-18 キヤノン株式会社 インバータの作製方法及びインバータ
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
US20090002044A1 (en) 2007-06-29 2009-01-01 Seiko Epson Corporation Master-slave type flip-flop circuit
US8046615B2 (en) 2007-10-19 2011-10-25 Denso Corporation Microcomputer system with reduced power consumption
JP4535170B2 (ja) 2007-10-19 2010-09-01 株式会社デンソー マイクロコンピュータシステム
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
JP5140459B2 (ja) 2008-02-28 2013-02-06 ローム株式会社 不揮発性記憶ゲートおよびその動作方法、および不揮発性記憶ゲート組込み型論理回路およびその動作方法
JP5305696B2 (ja) 2008-03-06 2013-10-02 キヤノン株式会社 半導体素子の処理方法
KR101490112B1 (ko) 2008-03-28 2015-02-05 삼성전자주식회사 인버터 및 그를 포함하는 논리회로
US8085076B2 (en) 2008-07-03 2011-12-27 Broadcom Corporation Data retention flip flop for low power applications
JP2010034710A (ja) 2008-07-25 2010-02-12 Nec Electronics Corp 半導体集積回路及びその誤動作防止方法
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
KR101623958B1 (ko) 2008-10-01 2016-05-25 삼성전자주식회사 인버터 및 그의 동작방법과 인버터를 포함하는 논리회로
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP5781720B2 (ja) 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US8319528B2 (en) * 2009-03-26 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having interconnected transistors and electronic device including semiconductor device
CN105070715B (zh) 2009-10-21 2018-10-19 株式会社半导体能源研究所 半导体装置
KR102321812B1 (ko) 2009-10-29 2021-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101823861B1 (ko) * 2009-11-20 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
KR101720072B1 (ko) * 2009-12-11 2017-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
WO2011074408A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Non-volatile latch circuit and logic circuit, and semiconductor device using the same
CN102652396B (zh) * 2009-12-23 2015-12-16 株式会社半导体能源研究所 半导体装置
KR101874779B1 (ko) * 2009-12-25 2018-07-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 메모리 장치, 반도체 장치, 및 전자 장치
WO2011102227A1 (en) * 2010-02-18 2011-08-25 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
KR102386149B1 (ko) * 2010-02-23 2022-04-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN107947763B (zh) 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
TWI562142B (en) * 2011-01-05 2016-12-11 Semiconductor Energy Lab Co Ltd Storage element, storage device, and signal processing circuit
JP6041707B2 (ja) * 2012-03-05 2016-12-14 株式会社半導体エネルギー研究所 ラッチ回路および半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011171723A (ja) * 2010-01-20 2011-09-01 Semiconductor Energy Lab Co Ltd 信号処理回路、及び信号処理回路の駆動方法
JP2012048806A (ja) * 2010-07-27 2012-03-08 Semiconductor Energy Lab Co Ltd 半導体装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015155633A1 (en) * 2014-04-11 2015-10-15 Semiconductor Energy Laboratory Co., Ltd. Holding circuit, driving method of the holding circuit, and semiconductor device including the holding circuit
US9601215B2 (en) 2014-04-11 2017-03-21 Semiconductor Energy Laboratory Co., Ltd. Holding circuit, driving method of the holding circuit, and semiconductor device including the holding circuit
JP2016105590A (ja) * 2014-11-21 2016-06-09 株式会社半導体エネルギー研究所 論理回路、および論理回路を有する半導体装置

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