KR102058595B1 - 탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법 - Google Patents
탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법 Download PDFInfo
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- KR102058595B1 KR102058595B1 KR1020177025009A KR20177025009A KR102058595B1 KR 102058595 B1 KR102058595 B1 KR 102058595B1 KR 1020177025009 A KR1020177025009 A KR 1020177025009A KR 20177025009 A KR20177025009 A KR 20177025009A KR 102058595 B1 KR102058595 B1 KR 102058595B1
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- plasma
- film
- disilacyclobutane
- cyclic
- silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/308—Oxynitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/02354—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light using a coherent radiation, e.g. a laser
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Inorganic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Optics & Photonics (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562113024P | 2015-02-06 | 2015-02-06 | |
| US62/113,024 | 2015-02-06 | ||
| US201562142546P | 2015-04-03 | 2015-04-03 | |
| US62/142,546 | 2015-04-03 | ||
| PCT/US2016/016514 WO2016126911A2 (en) | 2015-02-06 | 2016-02-04 | Compositions and methods using same for carbon doped silicon containing films |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020197037069A Division KR20190141034A (ko) | 2015-02-06 | 2016-02-04 | 탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170115590A KR20170115590A (ko) | 2017-10-17 |
| KR102058595B1 true KR102058595B1 (ko) | 2019-12-23 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247009235A Ceased KR20240042186A (ko) | 2015-02-06 | 2016-02-04 | 탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법 |
| KR1020227005956A Active KR102650626B1 (ko) | 2015-02-06 | 2016-02-04 | 탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법 |
| KR1020197037069A Ceased KR20190141034A (ko) | 2015-02-06 | 2016-02-04 | 탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법 |
| KR1020177025009A Active KR102058595B1 (ko) | 2015-02-06 | 2016-02-04 | 탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247009235A Ceased KR20240042186A (ko) | 2015-02-06 | 2016-02-04 | 탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법 |
| KR1020227005956A Active KR102650626B1 (ko) | 2015-02-06 | 2016-02-04 | 탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법 |
| KR1020197037069A Ceased KR20190141034A (ko) | 2015-02-06 | 2016-02-04 | 탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10145008B2 (enExample) |
| EP (2) | EP3460827B1 (enExample) |
| JP (4) | JP6585724B2 (enExample) |
| KR (4) | KR20240042186A (enExample) |
| CN (1) | CN107406978B (enExample) |
| IL (1) | IL253746B (enExample) |
| SG (2) | SG10202012631SA (enExample) |
| TW (1) | TWI585230B (enExample) |
| WO (1) | WO2016126911A2 (enExample) |
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-
2016
- 2016-02-04 EP EP18201141.1A patent/EP3460827B1/en active Active
- 2016-02-04 WO PCT/US2016/016514 patent/WO2016126911A2/en not_active Ceased
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- 2016-02-04 KR KR1020247009235A patent/KR20240042186A/ko not_active Ceased
- 2016-02-04 KR KR1020227005956A patent/KR102650626B1/ko active Active
- 2016-02-04 EP EP16706464.1A patent/EP3254303B1/en active Active
- 2016-02-04 US US15/548,884 patent/US10145008B2/en active Active
- 2016-02-04 KR KR1020197037069A patent/KR20190141034A/ko not_active Ceased
- 2016-02-04 SG SG11201706257YA patent/SG11201706257YA/en unknown
- 2016-02-04 JP JP2017541257A patent/JP6585724B2/ja active Active
- 2016-02-04 CN CN201680019197.0A patent/CN107406978B/zh active Active
- 2016-02-04 KR KR1020177025009A patent/KR102058595B1/ko active Active
- 2016-02-04 TW TW105103876A patent/TWI585230B/zh active
-
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- 2017-07-31 IL IL253746A patent/IL253746B/en unknown
-
2019
- 2019-09-05 JP JP2019161923A patent/JP7048548B2/ja active Active
-
2021
- 2021-12-03 JP JP2021196975A patent/JP2022031313A/ja active Pending
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2023
- 2023-09-27 JP JP2023164716A patent/JP2023182658A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| IL253746B (en) | 2021-10-31 |
| KR20240042186A (ko) | 2024-04-01 |
| IL253746A0 (en) | 2017-09-28 |
| JP6585724B2 (ja) | 2019-10-02 |
| TW201629255A (zh) | 2016-08-16 |
| EP3460827A1 (en) | 2019-03-27 |
| CN107406978B (zh) | 2019-12-03 |
| EP3254303A2 (en) | 2017-12-13 |
| SG10202012631SA (en) | 2021-01-28 |
| CN107406978A (zh) | 2017-11-28 |
| US10145008B2 (en) | 2018-12-04 |
| KR20220027287A (ko) | 2022-03-07 |
| JP2023182658A (ja) | 2023-12-26 |
| KR20190141034A (ko) | 2019-12-20 |
| EP3460827B1 (en) | 2022-05-25 |
| SG11201706257YA (en) | 2017-08-30 |
| EP3254303B1 (en) | 2018-12-05 |
| JP2019220713A (ja) | 2019-12-26 |
| JP7048548B2 (ja) | 2022-04-05 |
| TWI585230B (zh) | 2017-06-01 |
| JP2022031313A (ja) | 2022-02-18 |
| KR102650626B1 (ko) | 2024-03-21 |
| WO2016126911A2 (en) | 2016-08-11 |
| US20180023192A1 (en) | 2018-01-25 |
| JP2018506185A (ja) | 2018-03-01 |
| KR20170115590A (ko) | 2017-10-17 |
| WO2016126911A3 (en) | 2016-11-24 |
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