JP6585724B2 - 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 - Google Patents

炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 Download PDF

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JP6585724B2
JP6585724B2 JP2017541257A JP2017541257A JP6585724B2 JP 6585724 B2 JP6585724 B2 JP 6585724B2 JP 2017541257 A JP2017541257 A JP 2017541257A JP 2017541257 A JP2017541257 A JP 2017541257A JP 6585724 B2 JP6585724 B2 JP 6585724B2
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disilacyclobutane
film
carbon
plasma
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JP2018506185A (ja
JP2018506185A5 (enExample
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チャンドラ ハリピン
チャンドラ ハリピン
スコット カットヒル カーク
スコット カットヒル カーク
マリカジュナン アヌパマ
マリカジュナン アヌパマ
レイ シンジエン
レイ シンジエン
アール.マクドナルド マシュー
アール.マクドナルド マシュー
シヤオ マンチャオ
シヤオ マンチャオ
バスカーラ ラオ マドゥカー
バスカーラ ラオ マドゥカー
ジエンホゥオン リー
ジエンホゥオン リー
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バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー
バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー
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JP2017541257A 2015-02-06 2016-02-04 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 Active JP6585724B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562113024P 2015-02-06 2015-02-06
US62/113,024 2015-02-06
US201562142546P 2015-04-03 2015-04-03
US62/142,546 2015-04-03
PCT/US2016/016514 WO2016126911A2 (en) 2015-02-06 2016-02-04 Compositions and methods using same for carbon doped silicon containing films

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Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11549181B2 (en) * 2013-11-22 2023-01-10 Applied Materials, Inc. Methods for atomic layer deposition of SiCO(N) using halogenated silylamides
KR20190141034A (ko) * 2015-02-06 2019-12-20 버슘머트리얼즈 유에스, 엘엘씨 탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법
TWI706957B (zh) * 2015-03-30 2020-10-11 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 碳矽烷與氨、胺類及脒類之觸媒去氫耦合
US20180033614A1 (en) 2016-07-27 2018-02-01 Versum Materials Us, Llc Compositions and Methods Using Same for Carbon Doped Silicon Containing Films
US10224224B2 (en) 2017-03-10 2019-03-05 Micromaterials, LLC High pressure wafer processing systems and related methods
US10847360B2 (en) 2017-05-25 2020-11-24 Applied Materials, Inc. High pressure treatment of silicon nitride film
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
WO2019036157A1 (en) 2017-08-18 2019-02-21 Applied Materials, Inc. HIGH PRESSURE AND HIGH TEMPERATURE RECOVERY CHAMBER
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
CN111095524B (zh) 2017-09-12 2023-10-03 应用材料公司 用于使用保护阻挡物层制造半导体结构的设备和方法
WO2019058477A1 (ja) * 2017-09-21 2019-03-28 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
US10483372B2 (en) 2017-09-29 2019-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Spacer structure with high plasma resistance for semiconductor devices
KR102585074B1 (ko) 2017-11-11 2023-10-04 마이크로머티어리얼즈 엘엘씨 고압 프로세싱 챔버를 위한 가스 전달 시스템
KR102622303B1 (ko) 2017-11-16 2024-01-05 어플라이드 머티어리얼스, 인코포레이티드 고압 스팀 어닐링 프로세싱 장치
KR20200075892A (ko) 2017-11-17 2020-06-26 어플라이드 머티어리얼스, 인코포레이티드 고압 처리 시스템을 위한 컨덴서 시스템
US10510852B2 (en) 2017-11-28 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Low-k feature formation processes and structures formed thereby
JP6806719B2 (ja) 2018-01-17 2021-01-06 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置およびプログラム
CN111699549B (zh) 2018-01-24 2025-03-28 应用材料公司 使用高压退火的接缝弥合
EP3762962A4 (en) 2018-03-09 2021-12-08 Applied Materials, Inc. HIGH PRESSURE ANNEALING PROCESS FOR METAL-BASED MATERIALS
US10714331B2 (en) * 2018-04-04 2020-07-14 Applied Materials, Inc. Method to fabricate thermally stable low K-FinFET spacer
US10950429B2 (en) 2018-05-08 2021-03-16 Applied Materials, Inc. Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom
US10704141B2 (en) 2018-06-01 2020-07-07 Applied Materials, Inc. In-situ CVD and ALD coating of chamber to control metal contamination
US10748783B2 (en) 2018-07-25 2020-08-18 Applied Materials, Inc. Gas delivery module
US10675581B2 (en) 2018-08-06 2020-06-09 Applied Materials, Inc. Gas abatement apparatus
US10985010B2 (en) * 2018-08-29 2021-04-20 Versum Materials Us, Llc Methods for making silicon and nitrogen containing films
US20200071819A1 (en) * 2018-08-29 2020-03-05 Versum Materials Us, Llc Methods For Making Silicon Containing Films That Have High Carbon Content
JP6980624B2 (ja) * 2018-09-13 2021-12-15 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
SG11202102842UA (en) * 2018-09-21 2021-04-29 Lam Res Corp Low-k ald gap-fill methods and material
US20220037144A1 (en) * 2018-09-24 2022-02-03 Versum Materials Us, Llc Methods for making silicon and nitrogen containing films
WO2020072625A1 (en) * 2018-10-03 2020-04-09 Versum Materials Us, Llc Methods for making silicon and nitrogen containing films
TWI721588B (zh) * 2018-10-05 2021-03-11 美商慧盛材料美國責任有限公司 含矽膜的高溫原子層沉積
KR102528076B1 (ko) 2018-10-30 2023-05-03 어플라이드 머티어리얼스, 인코포레이티드 반도체 응용들을 위한 구조를 식각하기 위한 방법들
CN112996950B (zh) 2018-11-16 2024-04-05 应用材料公司 使用增强扩散工艺的膜沉积
SG11202105522QA (en) * 2018-11-27 2021-06-29 Versum Materials Us Llc 1-methyl-1-iso-propoxy-silacycloalkanes and dense organosilica films made therefrom
JP6957442B2 (ja) 2018-11-30 2021-11-02 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
WO2020117462A1 (en) 2018-12-07 2020-06-11 Applied Materials, Inc. Semiconductor processing system
TWI764068B (zh) 2019-01-11 2022-05-11 日商國際電氣股份有限公司 半導體裝置之製造方法、基板處理方法、基板處理裝置及程式
US11756786B2 (en) 2019-01-18 2023-09-12 International Business Machines Corporation Forming high carbon content flowable dielectric film with low processing damage
EP3902939A4 (en) * 2019-02-05 2022-09-28 Versum Materials US, LLC CARBON DOPED SILICON OXIDE DEPOSIT
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
EP3990676A4 (en) 2019-07-25 2023-07-05 Versum Materials US, LLC COMPOSITIONS WITH SILACYCLOALKANES AND METHODS OF USE THEREOF FOR DEPOSITION OF SILICON-CONTAINING FILM
US11186909B2 (en) * 2019-08-26 2021-11-30 Applied Materials, Inc. Methods of depositing low-K films
WO2021153986A1 (ko) * 2020-01-31 2021-08-05 주식회사 유피케미칼 실리콘 전구체 화합물, 이를 포함하는 실리콘-함유 막 형성용 조성물 및 실리콘-함유 막 형성 방법
US11901222B2 (en) 2020-02-17 2024-02-13 Applied Materials, Inc. Multi-step process for flowable gap-fill film
CN111681943B (zh) * 2020-04-27 2025-10-31 全球能源互联网研究院有限公司 一种碳化硅表面的处理方法
CN115867689A (zh) * 2020-06-23 2023-03-28 恩特格里斯公司 硅前体化合物及形成含硅膜的方法
CN115152008A (zh) 2020-11-13 2022-10-04 朗姆研究公司 用于干法去除光致抗蚀剂的处理工具
KR20230106177A (ko) * 2020-11-16 2023-07-12 버슘머트리얼즈 유에스, 엘엘씨 유전체 상의 규소 및 산소 함유 유전체 필름의 선택적 증착
US20220342302A1 (en) * 2021-03-24 2022-10-27 Applied Materials, Inc. Dual tone photoresists
US20220308453A1 (en) * 2021-03-24 2022-09-29 Applied Materials, Inc. Oxidation treatment for positive tone photoresist films
US20220406595A1 (en) * 2021-06-22 2022-12-22 Applied Materials, Inc. Novel oxidants and strained-ring precursors
JP2025501541A (ja) * 2021-12-20 2025-01-22 ラム リサーチ コーポレーション アミノシラン及びクロロシラン前駆体を使用したコンフォーマル酸化ケイ素成膜
US12504692B2 (en) 2022-07-01 2025-12-23 Lam Research Corporation Cyclic development of metal oxide based photoresist for etch stop deterrence
KR20250006116A (ko) 2023-03-17 2025-01-10 램 리써치 코포레이션 단일 프로세스 챔버에서의 euv 패터닝을 위한 건식 현상 및 에칭 프로세스의 통합
WO2024258914A1 (en) * 2023-06-13 2024-12-19 Lam Research Corporation Precursors for low dielectric film deposition

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW302063U (en) * 1992-09-24 1997-04-01 Honda Motor Co Ltd Pipe joint
US5415126A (en) * 1993-08-16 1995-05-16 Dow Corning Corporation Method of forming crystalline silicon carbide coatings at low temperatures
US20080268177A1 (en) * 2002-05-17 2008-10-30 Air Products And Chemicals, Inc. Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants
JP5218765B2 (ja) * 2006-03-29 2013-06-26 Jsr株式会社 ポリマーの製造方法、ポリマー、ポリマー膜形成用組成物、ポリマー膜の形成方法およびポリマー膜
US7998536B2 (en) * 2007-07-12 2011-08-16 Applied Materials, Inc. Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor deposition
KR100923775B1 (ko) * 2007-11-30 2009-10-27 한국과학기술연구원 폴리염화카보실란의 제조방법
JPWO2009123032A1 (ja) * 2008-04-02 2011-07-28 Jsr株式会社 含ケイ素重合体を含む組成物およびその硬化物
US8241624B2 (en) 2008-04-18 2012-08-14 Ecolab Usa Inc. Method of disinfecting packages with composition containing peracid and catalase
US8298628B2 (en) * 2008-06-02 2012-10-30 Air Products And Chemicals, Inc. Low temperature deposition of silicon-containing films
JP5491512B2 (ja) 2008-10-20 2014-05-14 ダウ コーニング コーポレーション Cvd前駆体
US8703624B2 (en) * 2009-03-13 2014-04-22 Air Products And Chemicals, Inc. Dielectric films comprising silicon and methods for making same
US8703625B2 (en) 2010-02-04 2014-04-22 Air Products And Chemicals, Inc. Methods to prepare silicon-containing films
WO2011125395A1 (ja) * 2010-04-09 2011-10-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
CN103168344A (zh) * 2010-11-03 2013-06-19 应用材料公司 用于沉积碳化硅和碳氮化硅膜的设备和方法
US8575033B2 (en) 2011-09-13 2013-11-05 Applied Materials, Inc. Carbosilane precursors for low temperature film deposition
US8993072B2 (en) * 2011-09-27 2015-03-31 Air Products And Chemicals, Inc. Halogenated organoaminosilane precursors and methods for depositing films comprising same
JP6043546B2 (ja) * 2011-10-21 2016-12-14 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
US20130224964A1 (en) 2012-02-28 2013-08-29 Asm Ip Holding B.V. Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond
US8871656B2 (en) 2012-03-05 2014-10-28 Applied Materials, Inc. Flowable films using alternative silicon precursors
US20130288485A1 (en) * 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
US9337018B2 (en) * 2012-06-01 2016-05-10 Air Products And Chemicals, Inc. Methods for depositing films with organoaminodisilane precursors
US9243324B2 (en) 2012-07-30 2016-01-26 Air Products And Chemicals, Inc. Methods of forming non-oxygen containing silicon-based films
KR20150121217A (ko) 2013-03-01 2015-10-28 어플라이드 머티어리얼스, 인코포레이티드 SiCN 또는 SiCON을 포함하는 필름의 저온 원자층 증착
US20140302690A1 (en) 2013-04-04 2014-10-09 Applied Materials, Inc. Chemical linkers to impart improved mechanical strength to flowable films
US9343293B2 (en) 2013-04-04 2016-05-17 Applied Materials, Inc. Flowable silicon—carbon—oxygen layers for semiconductor processing
KR20190141034A (ko) * 2015-02-06 2019-12-20 버슘머트리얼즈 유에스, 엘엘씨 탄소 도핑된 규소 함유 필름을 위한 조성물 및 이의 사용 방법

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