JP2018506185A5 - - Google Patents
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- JP2018506185A5 JP2018506185A5 JP2017541257A JP2017541257A JP2018506185A5 JP 2018506185 A5 JP2018506185 A5 JP 2018506185A5 JP 2017541257 A JP2017541257 A JP 2017541257A JP 2017541257 A JP2017541257 A JP 2017541257A JP 2018506185 A5 JP2018506185 A5 JP 2018506185A5
- Authority
- JP
- Japan
- Prior art keywords
- disilacyclobutane
- cyclic
- plasma
- group
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 125000004122 cyclic group Chemical group 0.000 claims 23
- 238000000034 method Methods 0.000 claims 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 14
- 229910052710 silicon Inorganic materials 0.000 claims 14
- 239000010703 silicon Substances 0.000 claims 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 9
- 239000001301 oxygen Substances 0.000 claims 9
- 229910052760 oxygen Inorganic materials 0.000 claims 9
- 239000002243 precursor Substances 0.000 claims 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims 6
- 229910052786 argon Inorganic materials 0.000 claims 5
- 239000001307 helium Substances 0.000 claims 5
- 229910052734 helium Inorganic materials 0.000 claims 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 5
- 229910052757 nitrogen Inorganic materials 0.000 claims 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 5
- LISDBLOKKWTHNH-UHFFFAOYSA-N 1,3,5-Trisilacyclohexan Natural products C1[SiH2]C[SiH2]C[SiH2]1 LISDBLOKKWTHNH-UHFFFAOYSA-N 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 4
- 239000001257 hydrogen Substances 0.000 claims 4
- 229910052739 hydrogen Inorganic materials 0.000 claims 4
- GHFCSGZETOKRDX-UHFFFAOYSA-N 1,1,3,3-tetrachloro-1,3,5-trisilinane Chemical compound Cl[Si]1(C[Si](C[SiH2]C1)(Cl)Cl)Cl GHFCSGZETOKRDX-UHFFFAOYSA-N 0.000 claims 3
- SYSHGEHAYJKOLC-UHFFFAOYSA-N 1,1,3,3-tetrachloro-1,3-disiletane Chemical compound Cl[Si]1(Cl)C[Si](Cl)(Cl)C1 SYSHGEHAYJKOLC-UHFFFAOYSA-N 0.000 claims 3
- YXEUXUWNULSFFD-UHFFFAOYSA-N 1,3-dibromo-1,3-disiletane Chemical compound Br[SiH]1C[SiH](Br)C1 YXEUXUWNULSFFD-UHFFFAOYSA-N 0.000 claims 3
- JLQZGADRJJMDNW-UHFFFAOYSA-N 1,3-dichloro-1,3-dimethyl-1,3-disiletane Chemical compound C[Si]1(Cl)C[Si](C)(Cl)C1 JLQZGADRJJMDNW-UHFFFAOYSA-N 0.000 claims 3
- NRRDFTJNERNSST-UHFFFAOYSA-N 1,3-dichloro-1-n,1-n,3-n,3-n-tetramethyl-1,3-disiletane-1,3-diamine Chemical compound CN(C)[Si]1(Cl)C[Si](Cl)(N(C)C)C1 NRRDFTJNERNSST-UHFFFAOYSA-N 0.000 claims 3
- GPWWAMQYZRLMDJ-UHFFFAOYSA-N 1-bromo-1,3-disiletane Chemical compound Br[SiH]1C[SiH2]C1 GPWWAMQYZRLMDJ-UHFFFAOYSA-N 0.000 claims 3
- KFEPWALDYLJNIO-UHFFFAOYSA-N 1-chloro-1,3-disiletane Chemical compound Cl[SiH]1C[SiH2]C1 KFEPWALDYLJNIO-UHFFFAOYSA-N 0.000 claims 3
- ZSJFGVOPAMPCNL-UHFFFAOYSA-N Br[Si]1(C[SiH2]C1)Br Chemical compound Br[Si]1(C[SiH2]C1)Br ZSJFGVOPAMPCNL-UHFFFAOYSA-N 0.000 claims 3
- ADGZRIQEIVWAEW-UHFFFAOYSA-N CN(C)[Si]1(Cl)C[Si](Cl)(Cl)C1 Chemical compound CN(C)[Si]1(Cl)C[Si](Cl)(Cl)C1 ADGZRIQEIVWAEW-UHFFFAOYSA-N 0.000 claims 3
- YYAKHGXAIYORKU-UHFFFAOYSA-N Cl[Si]1(C[SiH2]C1)Cl Chemical compound Cl[Si]1(C[SiH2]C1)Cl YYAKHGXAIYORKU-UHFFFAOYSA-N 0.000 claims 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- OSDVQTFYZSIHNB-UHFFFAOYSA-N I[SiH]1C[SiH2]C1 Chemical compound I[SiH]1C[SiH2]C1 OSDVQTFYZSIHNB-UHFFFAOYSA-N 0.000 claims 3
- VTCFWRLUGBYBBE-UHFFFAOYSA-N I[SiH]1C[SiH](C1)I Chemical compound I[SiH]1C[SiH](C1)I VTCFWRLUGBYBBE-UHFFFAOYSA-N 0.000 claims 3
- PUQYCPQNZPTQOZ-UHFFFAOYSA-N I[Si]1(C[SiH2]C1)I Chemical compound I[Si]1(C[SiH2]C1)I PUQYCPQNZPTQOZ-UHFFFAOYSA-N 0.000 claims 3
- UNVFLHYMVYCQNV-UHFFFAOYSA-N I[Si]1(C[Si](C1)(I)I)I Chemical compound I[Si]1(C[Si](C1)(I)I)I UNVFLHYMVYCQNV-UHFFFAOYSA-N 0.000 claims 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims 3
- 229910021529 ammonia Inorganic materials 0.000 claims 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- LNFPOEVLACQNGW-UHFFFAOYSA-N 1-N,1-N,1-N',1-N',3-N,3-N,3-N',3-N'-octamethyl-1,3-disiletane-1,1,3,3-tetramine Chemical compound CN([Si]1(C[Si](C1)(N(C)C)N(C)C)N(C)C)C LNFPOEVLACQNGW-UHFFFAOYSA-N 0.000 claims 2
- SPIJTMVEMHMCAK-UHFFFAOYSA-N CN[Si]1(C[Si](C1)(C)NC)C Chemical compound CN[Si]1(C[Si](C1)(C)NC)C SPIJTMVEMHMCAK-UHFFFAOYSA-N 0.000 claims 2
- JWPCSDOCHHRBOD-UHFFFAOYSA-N CN[Si]1(C[Si](C1)(NC)NC)NC Chemical compound CN[Si]1(C[Si](C1)(NC)NC)NC JWPCSDOCHHRBOD-UHFFFAOYSA-N 0.000 claims 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 claims 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims 2
- 125000000217 alkyl group Chemical group 0.000 claims 2
- 125000003277 amino group Chemical group 0.000 claims 2
- 125000001664 diethylamino group Chemical group [H]C([H])([H])C([H])([H])N(*)C([H])([H])C([H])([H])[H] 0.000 claims 2
- 238000010894 electron beam technology Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 2
- DFQZXUVHEJJUTH-UHFFFAOYSA-N 1,1,3,3-tetrabromo-1,3-disiletane Chemical compound Br[Si]1(Br)C[Si](Br)(Br)C1 DFQZXUVHEJJUTH-UHFFFAOYSA-N 0.000 claims 1
- KLTYEMHFBXTIQP-UHFFFAOYSA-N 1,3-dichloro-1,3-disiletane Chemical compound Cl[SiH]1C[SiH](Cl)C1 KLTYEMHFBXTIQP-UHFFFAOYSA-N 0.000 claims 1
- AKDHUUDXAAUAPB-UHFFFAOYSA-N 1,3-dimethyl-1,3-disiletane Chemical compound C[SiH]1C[SiH](C)C1 AKDHUUDXAAUAPB-UHFFFAOYSA-N 0.000 claims 1
- IBOVEAKZLYGPNP-UHFFFAOYSA-N 1-n,1-n,3-n,3-n,1,3-hexamethyl-1,3-disiletane-1,3-diamine Chemical compound CN(C)[Si]1(C)C[Si](C)(N(C)C)C1 IBOVEAKZLYGPNP-UHFFFAOYSA-N 0.000 claims 1
- QNWHJNDBZHRHAS-UHFFFAOYSA-N C(C)(C)N[Si]1(C[SiH](C1)C)C Chemical compound C(C)(C)N[Si]1(C[SiH](C1)C)C QNWHJNDBZHRHAS-UHFFFAOYSA-N 0.000 claims 1
- WGRLUJXWLJSVDR-UHFFFAOYSA-N C(C)N([Si]1(C[Si](C1)(Cl)N(CC)CC)Cl)CC Chemical compound C(C)N([Si]1(C[Si](C1)(Cl)N(CC)CC)Cl)CC WGRLUJXWLJSVDR-UHFFFAOYSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims 1
- URKHKSAKGFMKQJ-UHFFFAOYSA-N N,N,1,3-tetramethyl-1,3-disiletan-1-amine Chemical compound CN(C)[Si]1(C[SiH](C1)C)C URKHKSAKGFMKQJ-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 125000003342 alkenyl group Chemical group 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 125000003118 aryl group Chemical group 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- 125000006165 cyclic alkyl group Chemical group 0.000 claims 1
- 150000004985 diamines Chemical class 0.000 claims 1
- 150000004820 halides Chemical group 0.000 claims 1
- 125000000623 heterocyclic group Chemical group 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- -1 iso -Propylamino Chemical group 0.000 claims 1
- 229910052754 neon Inorganic materials 0.000 claims 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 1
- 150000001451 organic peroxides Chemical class 0.000 claims 1
- 238000009832 plasma treatment Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562113024P | 2015-02-06 | 2015-02-06 | |
| US62/113,024 | 2015-02-06 | ||
| US201562142546P | 2015-04-03 | 2015-04-03 | |
| US62/142,546 | 2015-04-03 | ||
| PCT/US2016/016514 WO2016126911A2 (en) | 2015-02-06 | 2016-02-04 | Compositions and methods using same for carbon doped silicon containing films |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019161923A Division JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018506185A JP2018506185A (ja) | 2018-03-01 |
| JP2018506185A5 true JP2018506185A5 (enExample) | 2018-04-26 |
| JP6585724B2 JP6585724B2 (ja) | 2019-10-02 |
Family
ID=55436159
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017541257A Active JP6585724B2 (ja) | 2015-02-06 | 2016-02-04 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2019161923A Active JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2021196975A Pending JP2022031313A (ja) | 2015-02-06 | 2021-12-03 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2023164716A Pending JP2023182658A (ja) | 2015-02-06 | 2023-09-27 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Family Applications After (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019161923A Active JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2021196975A Pending JP2022031313A (ja) | 2015-02-06 | 2021-12-03 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2023164716A Pending JP2023182658A (ja) | 2015-02-06 | 2023-09-27 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10145008B2 (enExample) |
| EP (2) | EP3254303B1 (enExample) |
| JP (4) | JP6585724B2 (enExample) |
| KR (4) | KR102650626B1 (enExample) |
| CN (1) | CN107406978B (enExample) |
| IL (1) | IL253746B (enExample) |
| SG (2) | SG11201706257YA (enExample) |
| TW (1) | TWI585230B (enExample) |
| WO (1) | WO2016126911A2 (enExample) |
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| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
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