JP2023182658A5 - - Google Patents
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- JP2023182658A5 JP2023182658A5 JP2023164716A JP2023164716A JP2023182658A5 JP 2023182658 A5 JP2023182658 A5 JP 2023182658A5 JP 2023164716 A JP2023164716 A JP 2023164716A JP 2023164716 A JP2023164716 A JP 2023164716A JP 2023182658 A5 JP2023182658 A5 JP 2023182658A5
- Authority
- JP
- Japan
- Prior art keywords
- disilacyclobutane
- plasma
- carbon
- doped silicon
- nitrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562113024P | 2015-02-06 | 2015-02-06 | |
| US62/113,024 | 2015-02-06 | ||
| US201562142546P | 2015-04-03 | 2015-04-03 | |
| US62/142,546 | 2015-04-03 | ||
| JP2019161923A JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2021196975A JP2022031313A (ja) | 2015-02-06 | 2021-12-03 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021196975A Division JP2022031313A (ja) | 2015-02-06 | 2021-12-03 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023182658A JP2023182658A (ja) | 2023-12-26 |
| JP2023182658A5 true JP2023182658A5 (enExample) | 2025-02-04 |
Family
ID=55436159
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017541257A Active JP6585724B2 (ja) | 2015-02-06 | 2016-02-04 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2019161923A Active JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2021196975A Pending JP2022031313A (ja) | 2015-02-06 | 2021-12-03 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2023164716A Pending JP2023182658A (ja) | 2015-02-06 | 2023-09-27 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Family Applications Before (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017541257A Active JP6585724B2 (ja) | 2015-02-06 | 2016-02-04 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2019161923A Active JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2021196975A Pending JP2022031313A (ja) | 2015-02-06 | 2021-12-03 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10145008B2 (enExample) |
| EP (2) | EP3460827B1 (enExample) |
| JP (4) | JP6585724B2 (enExample) |
| KR (4) | KR102058595B1 (enExample) |
| CN (1) | CN107406978B (enExample) |
| IL (1) | IL253746B (enExample) |
| SG (2) | SG10202012631SA (enExample) |
| TW (1) | TWI585230B (enExample) |
| WO (1) | WO2016126911A2 (enExample) |
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| TWI706957B (zh) * | 2015-03-30 | 2020-10-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 碳矽烷與氨、胺類及脒類之觸媒去氫耦合 |
| US20180033614A1 (en) * | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
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| CN111699549B (zh) | 2018-01-24 | 2025-03-28 | 应用材料公司 | 使用高压退火的接缝弥合 |
| CN111902929B (zh) | 2018-03-09 | 2025-09-19 | 应用材料公司 | 用于含金属材料的高压退火处理 |
| US10714331B2 (en) * | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
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| US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
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| US20200071819A1 (en) * | 2018-08-29 | 2020-03-05 | Versum Materials Us, Llc | Methods For Making Silicon Containing Films That Have High Carbon Content |
| JP6980624B2 (ja) * | 2018-09-13 | 2021-12-15 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| KR102824780B1 (ko) * | 2018-09-21 | 2025-06-24 | 램 리써치 코포레이션 | 로우-K (low-k) ALD 갭-충진 방법들 및 재료 |
| US20220037144A1 (en) * | 2018-09-24 | 2022-02-03 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
| JP7421551B2 (ja) * | 2018-10-03 | 2024-01-24 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | ケイ素及び窒素を含有する膜を製造するための方法 |
| KR20210055101A (ko) * | 2018-10-05 | 2021-05-14 | 버슘머트리얼즈 유에스, 엘엘씨 | 실리콘-함유 필름의 고온 원자 층 증착 |
| WO2020092002A1 (en) | 2018-10-30 | 2020-05-07 | Applied Materials, Inc. | Methods for etching a structure for semiconductor applications |
| KR20210077779A (ko) | 2018-11-16 | 2021-06-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 강화된 확산 프로세스를 사용한 막 증착 |
| EP3887566A4 (en) * | 2018-11-27 | 2022-08-24 | Versum Materials US, LLC | 1-methyl-1-iso-propoxy-silacycloalkanes and dense organosilica films made therefrom |
| JP6957442B2 (ja) | 2018-11-30 | 2021-11-02 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| TWI764068B (zh) | 2019-01-11 | 2022-05-11 | 日商國際電氣股份有限公司 | 半導體裝置之製造方法、基板處理方法、基板處理裝置及程式 |
| US11756786B2 (en) | 2019-01-18 | 2023-09-12 | International Business Machines Corporation | Forming high carbon content flowable dielectric film with low processing damage |
| WO2020163359A1 (en) * | 2019-02-05 | 2020-08-13 | Versum Materials Us, Llc | Deposition of carbon doped silicon oxide |
| EP3990676A4 (en) * | 2019-07-25 | 2023-07-05 | Versum Materials US, LLC | COMPOSITIONS COMPRISING SILACYCLOALKANES AND METHODS USING THEM FOR DEPOSITING A FILM CONTAINING SILICON |
| US11186909B2 (en) * | 2019-08-26 | 2021-11-30 | Applied Materials, Inc. | Methods of depositing low-K films |
| JP7636422B2 (ja) * | 2020-01-31 | 2025-02-26 | ユーピー ケミカル カンパニー リミテッド | シリコン前駆体化合物、これを含むシリコン含有膜形成用組成物及びシリコン含有膜形成方法 |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| CN111681943B (zh) * | 2020-04-27 | 2025-10-31 | 全球能源互联网研究院有限公司 | 一种碳化硅表面的处理方法 |
| JP2023531513A (ja) * | 2020-06-23 | 2023-07-24 | インテグリス・インコーポレーテッド | ケイ素前駆体化合物及びケイ素含有膜を形成するための方法 |
| KR102673863B1 (ko) | 2020-11-13 | 2024-06-11 | 램 리써치 코포레이션 | 포토레지스트의 건식 제거를 위한 프로세스 툴 |
| WO2022104226A1 (en) * | 2020-11-16 | 2022-05-19 | Versum Materials Us, Llc | Selective deposition of silicon and oxygen containing dielectric film on dielectrics |
| US20220342302A1 (en) * | 2021-03-24 | 2022-10-27 | Applied Materials, Inc. | Dual tone photoresists |
| US20220308453A1 (en) * | 2021-03-24 | 2022-09-29 | Applied Materials, Inc. | Oxidation treatment for positive tone photoresist films |
| US20220406595A1 (en) * | 2021-06-22 | 2022-12-22 | Applied Materials, Inc. | Novel oxidants and strained-ring precursors |
| JP2025501541A (ja) * | 2021-12-20 | 2025-01-22 | ラム リサーチ コーポレーション | アミノシラン及びクロロシラン前駆体を使用したコンフォーマル酸化ケイ素成膜 |
| CN120958566A (zh) | 2023-03-17 | 2025-11-14 | 朗姆研究公司 | 用于单一处理室中euv图案化的干法显影与蚀刻工艺的集成 |
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| SG10202012631SA (en) * | 2015-02-06 | 2021-01-28 | Versum Materials Us Llc | Compositions and methods using same for carbon doped silicon containing films |
-
2016
- 2016-02-04 SG SG10202012631SA patent/SG10202012631SA/en unknown
- 2016-02-04 SG SG11201706257YA patent/SG11201706257YA/en unknown
- 2016-02-04 KR KR1020177025009A patent/KR102058595B1/ko active Active
- 2016-02-04 KR KR1020197037069A patent/KR20190141034A/ko not_active Ceased
- 2016-02-04 JP JP2017541257A patent/JP6585724B2/ja active Active
- 2016-02-04 CN CN201680019197.0A patent/CN107406978B/zh active Active
- 2016-02-04 EP EP18201141.1A patent/EP3460827B1/en active Active
- 2016-02-04 US US15/548,884 patent/US10145008B2/en active Active
- 2016-02-04 EP EP16706464.1A patent/EP3254303B1/en active Active
- 2016-02-04 TW TW105103876A patent/TWI585230B/zh active
- 2016-02-04 KR KR1020247009235A patent/KR20240042186A/ko not_active Ceased
- 2016-02-04 KR KR1020227005956A patent/KR102650626B1/ko active Active
- 2016-02-04 WO PCT/US2016/016514 patent/WO2016126911A2/en not_active Ceased
-
2017
- 2017-07-31 IL IL253746A patent/IL253746B/en unknown
-
2019
- 2019-09-05 JP JP2019161923A patent/JP7048548B2/ja active Active
-
2021
- 2021-12-03 JP JP2021196975A patent/JP2022031313A/ja active Pending
-
2023
- 2023-09-27 JP JP2023164716A patent/JP2023182658A/ja active Pending
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