JP2022031313A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2022031313A5 JP2022031313A5 JP2021196975A JP2021196975A JP2022031313A5 JP 2022031313 A5 JP2022031313 A5 JP 2022031313A5 JP 2021196975 A JP2021196975 A JP 2021196975A JP 2021196975 A JP2021196975 A JP 2021196975A JP 2022031313 A5 JP2022031313 A5 JP 2022031313A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- disilacyclobutane
- nitrogen
- carbon
- doped silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 210000002381 plasma Anatomy 0.000 claims 45
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 20
- 238000000034 method Methods 0.000 claims 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 16
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 16
- 229910052757 nitrogen Inorganic materials 0.000 claims 10
- 229910021529 ammonia Inorganic materials 0.000 claims 8
- 229910052786 argon Inorganic materials 0.000 claims 8
- 239000001307 helium Substances 0.000 claims 8
- 229910052734 helium Inorganic materials 0.000 claims 8
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 7
- 239000001257 hydrogen Substances 0.000 claims 7
- 229910052739 hydrogen Inorganic materials 0.000 claims 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 4
- 229910052710 silicon Inorganic materials 0.000 claims 4
- 239000010703 silicon Substances 0.000 claims 4
- 150000001412 amines Chemical class 0.000 claims 3
- 125000004122 cyclic group Chemical group 0.000 claims 3
- 150000004985 diamines Chemical class 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 229910052754 neon Inorganic materials 0.000 claims 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 2
- NLTXADBUSYWFIA-UHFFFAOYSA-N 1,1,3,3,5,5-hexachloro-1,3,5-trisilinane Chemical compound Cl[Si]1(Cl)C[Si](Cl)(Cl)C[Si](Cl)(Cl)C1 NLTXADBUSYWFIA-UHFFFAOYSA-N 0.000 claims 1
- DFQZXUVHEJJUTH-UHFFFAOYSA-N 1,1,3,3-tetrabromo-1,3-disiletane Chemical compound Br[Si]1(Br)C[Si](Br)(Br)C1 DFQZXUVHEJJUTH-UHFFFAOYSA-N 0.000 claims 1
- GHFCSGZETOKRDX-UHFFFAOYSA-N 1,1,3,3-tetrachloro-1,3,5-trisilinane Chemical compound Cl[Si]1(C[Si](C[SiH2]C1)(Cl)Cl)Cl GHFCSGZETOKRDX-UHFFFAOYSA-N 0.000 claims 1
- SYSHGEHAYJKOLC-UHFFFAOYSA-N 1,1,3,3-tetrachloro-1,3-disiletane Chemical compound Cl[Si]1(Cl)C[Si](Cl)(Cl)C1 SYSHGEHAYJKOLC-UHFFFAOYSA-N 0.000 claims 1
- YXEUXUWNULSFFD-UHFFFAOYSA-N 1,3-dibromo-1,3-disiletane Chemical compound Br[SiH]1C[SiH](Br)C1 YXEUXUWNULSFFD-UHFFFAOYSA-N 0.000 claims 1
- JLQZGADRJJMDNW-UHFFFAOYSA-N 1,3-dichloro-1,3-dimethyl-1,3-disiletane Chemical compound C[Si]1(Cl)C[Si](C)(Cl)C1 JLQZGADRJJMDNW-UHFFFAOYSA-N 0.000 claims 1
- KLTYEMHFBXTIQP-UHFFFAOYSA-N 1,3-dichloro-1,3-disiletane Chemical compound Cl[SiH]1C[SiH](Cl)C1 KLTYEMHFBXTIQP-UHFFFAOYSA-N 0.000 claims 1
- GPWWAMQYZRLMDJ-UHFFFAOYSA-N 1-bromo-1,3-disiletane Chemical compound Br[SiH]1C[SiH2]C1 GPWWAMQYZRLMDJ-UHFFFAOYSA-N 0.000 claims 1
- KFEPWALDYLJNIO-UHFFFAOYSA-N 1-chloro-1,3-disiletane Chemical compound Cl[SiH]1C[SiH2]C1 KFEPWALDYLJNIO-UHFFFAOYSA-N 0.000 claims 1
- ZSJFGVOPAMPCNL-UHFFFAOYSA-N Br[Si]1(C[SiH2]C1)Br Chemical compound Br[Si]1(C[SiH2]C1)Br ZSJFGVOPAMPCNL-UHFFFAOYSA-N 0.000 claims 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- YYAKHGXAIYORKU-UHFFFAOYSA-N Cl[Si]1(C[SiH2]C1)Cl Chemical compound Cl[Si]1(C[SiH2]C1)Cl YYAKHGXAIYORKU-UHFFFAOYSA-N 0.000 claims 1
- OSDVQTFYZSIHNB-UHFFFAOYSA-N I[SiH]1C[SiH2]C1 Chemical compound I[SiH]1C[SiH2]C1 OSDVQTFYZSIHNB-UHFFFAOYSA-N 0.000 claims 1
- VTCFWRLUGBYBBE-UHFFFAOYSA-N I[SiH]1C[SiH](C1)I Chemical compound I[SiH]1C[SiH](C1)I VTCFWRLUGBYBBE-UHFFFAOYSA-N 0.000 claims 1
- PUQYCPQNZPTQOZ-UHFFFAOYSA-N I[Si]1(C[SiH2]C1)I Chemical compound I[Si]1(C[SiH2]C1)I PUQYCPQNZPTQOZ-UHFFFAOYSA-N 0.000 claims 1
- UNVFLHYMVYCQNV-UHFFFAOYSA-N I[Si]1(C[Si](C1)(I)I)I Chemical compound I[Si]1(C[Si](C1)(I)I)I UNVFLHYMVYCQNV-UHFFFAOYSA-N 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023164716A JP2023182658A (ja) | 2015-02-06 | 2023-09-27 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562113024P | 2015-02-06 | 2015-02-06 | |
| US62/113,024 | 2015-02-06 | ||
| US201562142546P | 2015-04-03 | 2015-04-03 | |
| US62/142,546 | 2015-04-03 | ||
| JP2019161923A JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019161923A Division JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023164716A Division JP2023182658A (ja) | 2015-02-06 | 2023-09-27 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2022031313A JP2022031313A (ja) | 2022-02-18 |
| JP2022031313A5 true JP2022031313A5 (enExample) | 2022-05-31 |
Family
ID=55436159
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017541257A Active JP6585724B2 (ja) | 2015-02-06 | 2016-02-04 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2019161923A Active JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2021196975A Pending JP2022031313A (ja) | 2015-02-06 | 2021-12-03 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2023164716A Pending JP2023182658A (ja) | 2015-02-06 | 2023-09-27 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017541257A Active JP6585724B2 (ja) | 2015-02-06 | 2016-02-04 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
| JP2019161923A Active JP7048548B2 (ja) | 2015-02-06 | 2019-09-05 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023164716A Pending JP2023182658A (ja) | 2015-02-06 | 2023-09-27 | 炭素ドープケイ素含有膜のための組成物及びそれを使用する方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US10145008B2 (enExample) |
| EP (2) | EP3460827B1 (enExample) |
| JP (4) | JP6585724B2 (enExample) |
| KR (4) | KR20240042186A (enExample) |
| CN (1) | CN107406978B (enExample) |
| IL (1) | IL253746B (enExample) |
| SG (2) | SG10202012631SA (enExample) |
| TW (1) | TWI585230B (enExample) |
| WO (1) | WO2016126911A2 (enExample) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11549181B2 (en) * | 2013-11-22 | 2023-01-10 | Applied Materials, Inc. | Methods for atomic layer deposition of SiCO(N) using halogenated silylamides |
| TWI585230B (zh) * | 2015-02-06 | 2017-06-01 | 氣體產品及化學品股份公司 | 用於碳摻雜的含矽膜的組合物及其方法 |
| TWI716333B (zh) * | 2015-03-30 | 2021-01-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 碳矽烷與氨、胺類及脒類之觸媒去氫耦合 |
| US20180033614A1 (en) * | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| US10847360B2 (en) | 2017-05-25 | 2020-11-24 | Applied Materials, Inc. | High pressure treatment of silicon nitride film |
| KR102405723B1 (ko) | 2017-08-18 | 2022-06-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 및 고온 어닐링 챔버 |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| US11177128B2 (en) | 2017-09-12 | 2021-11-16 | Applied Materials, Inc. | Apparatus and methods for manufacturing semiconductor structures using protective barrier layer |
| WO2019058477A1 (ja) * | 2017-09-21 | 2019-03-28 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| US10483372B2 (en) | 2017-09-29 | 2019-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Spacer structure with high plasma resistance for semiconductor devices |
| CN117936417A (zh) | 2017-11-11 | 2024-04-26 | 微材料有限责任公司 | 用于高压处理腔室的气体输送系统 |
| US10854483B2 (en) | 2017-11-16 | 2020-12-01 | Applied Materials, Inc. | High pressure steam anneal processing apparatus |
| KR20200075892A (ko) | 2017-11-17 | 2020-06-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 고압 처리 시스템을 위한 컨덴서 시스템 |
| US10510852B2 (en) | 2017-11-28 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low-k feature formation processes and structures formed thereby |
| JP6806719B2 (ja) | 2018-01-17 | 2021-01-06 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| CN111699549B (zh) | 2018-01-24 | 2025-03-28 | 应用材料公司 | 使用高压退火的接缝弥合 |
| JP7239598B2 (ja) | 2018-03-09 | 2023-03-14 | アプライド マテリアルズ インコーポレイテッド | 金属含有材料の高圧アニーリングプロセス |
| US10714331B2 (en) * | 2018-04-04 | 2020-07-14 | Applied Materials, Inc. | Method to fabricate thermally stable low K-FinFET spacer |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10704141B2 (en) | 2018-06-01 | 2020-07-07 | Applied Materials, Inc. | In-situ CVD and ALD coating of chamber to control metal contamination |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| US10675581B2 (en) | 2018-08-06 | 2020-06-09 | Applied Materials, Inc. | Gas abatement apparatus |
| US20200071819A1 (en) * | 2018-08-29 | 2020-03-05 | Versum Materials Us, Llc | Methods For Making Silicon Containing Films That Have High Carbon Content |
| US10985010B2 (en) * | 2018-08-29 | 2021-04-20 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
| JP6980624B2 (ja) * | 2018-09-13 | 2021-12-15 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| SG11202102842UA (en) * | 2018-09-21 | 2021-04-29 | Lam Res Corp | Low-k ald gap-fill methods and material |
| US20220037144A1 (en) * | 2018-09-24 | 2022-02-03 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
| US20210398796A1 (en) * | 2018-10-03 | 2021-12-23 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
| KR20210055101A (ko) * | 2018-10-05 | 2021-05-14 | 버슘머트리얼즈 유에스, 엘엘씨 | 실리콘-함유 필름의 고온 원자 층 증착 |
| JP7179172B6 (ja) | 2018-10-30 | 2022-12-16 | アプライド マテリアルズ インコーポレイテッド | 半導体用途の構造体をエッチングするための方法 |
| KR20210077779A (ko) | 2018-11-16 | 2021-06-25 | 어플라이드 머티어리얼스, 인코포레이티드 | 강화된 확산 프로세스를 사용한 막 증착 |
| EP3887566A4 (en) * | 2018-11-27 | 2022-08-24 | Versum Materials US, LLC | 1-methyl-1-iso-propoxy-silacycloalkanes and dense organosilica films made therefrom |
| JP6957442B2 (ja) | 2018-11-30 | 2021-11-02 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| TWI764068B (zh) | 2019-01-11 | 2022-05-11 | 日商國際電氣股份有限公司 | 半導體裝置之製造方法、基板處理方法、基板處理裝置及程式 |
| US11756786B2 (en) | 2019-01-18 | 2023-09-12 | International Business Machines Corporation | Forming high carbon content flowable dielectric film with low processing damage |
| WO2020163359A1 (en) * | 2019-02-05 | 2020-08-13 | Versum Materials Us, Llc | Deposition of carbon doped silicon oxide |
| JP7598360B2 (ja) * | 2019-07-25 | 2024-12-11 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | ケイ素含有膜の堆積のためのシラシクロアルカンを含む組成物及びその組成物を使用する方法 |
| US11186909B2 (en) * | 2019-08-26 | 2021-11-30 | Applied Materials, Inc. | Methods of depositing low-K films |
| KR102844501B1 (ko) * | 2020-01-31 | 2025-08-11 | 주식회사 유피케미칼 | 실리콘 전구체 화합물, 이를 포함하는 실리콘-함유 막 형성용 조성물 및 실리콘-함유 막 형성 방법 |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| CN111681943B (zh) * | 2020-04-27 | 2025-10-31 | 全球能源互联网研究院有限公司 | 一种碳化硅表面的处理方法 |
| US12264392B2 (en) | 2020-06-23 | 2025-04-01 | Entegris, Inc. | Silicon precursor compounds and method for forming silicon-containing films |
| JP7562696B2 (ja) | 2020-11-13 | 2024-10-07 | ラム リサーチ コーポレーション | フォトレジストのドライ除去用プロセスツール |
| WO2022104226A1 (en) * | 2020-11-16 | 2022-05-19 | Versum Materials Us, Llc | Selective deposition of silicon and oxygen containing dielectric film on dielectrics |
| US20220308453A1 (en) * | 2021-03-24 | 2022-09-29 | Applied Materials, Inc. | Oxidation treatment for positive tone photoresist films |
| US20220342302A1 (en) * | 2021-03-24 | 2022-10-27 | Applied Materials, Inc. | Dual tone photoresists |
| US20220406595A1 (en) * | 2021-06-22 | 2022-12-22 | Applied Materials, Inc. | Novel oxidants and strained-ring precursors |
| WO2023122557A1 (en) * | 2021-12-20 | 2023-06-29 | Lam Research Corporation | Conformal silicon oxide deposition using aminosilane and chlorosilane precursors |
| US12474640B2 (en) | 2023-03-17 | 2025-11-18 | Lam Research Corporation | Integration of dry development and etch processes for EUV patterning in a single process chamber |
| WO2024258914A1 (en) * | 2023-06-13 | 2024-12-19 | Lam Research Corporation | Precursors for low dielectric film deposition |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100267605B1 (ko) * | 1992-09-24 | 2000-10-16 | 안자이 이치로 | 파이프 조인트 |
| US5415126A (en) * | 1993-08-16 | 1995-05-16 | Dow Corning Corporation | Method of forming crystalline silicon carbide coatings at low temperatures |
| US20080268177A1 (en) * | 2002-05-17 | 2008-10-30 | Air Products And Chemicals, Inc. | Porogens, Porogenated Precursors and Methods for Using the Same to Provide Porous Organosilica Glass Films with Low Dielectric Constants |
| WO2007119554A1 (ja) * | 2006-03-29 | 2007-10-25 | Jsr Corporation | ポリマーの製造方法、ポリマー、ポリマー膜形成用組成物、ポリマー膜の形成方法およびポリマー膜 |
| US7998536B2 (en) * | 2007-07-12 | 2011-08-16 | Applied Materials, Inc. | Silicon precursors to make ultra low-K films of K<2.2 with high mechanical properties by plasma enhanced chemical vapor deposition |
| KR100923775B1 (ko) * | 2007-11-30 | 2009-10-27 | 한국과학기술연구원 | 폴리염화카보실란의 제조방법 |
| KR20100130612A (ko) * | 2008-04-02 | 2010-12-13 | 제이에스알 가부시끼가이샤 | 규소 함유 중합체를 포함하는 조성물 및 그의 경화물 |
| US8241624B2 (en) | 2008-04-18 | 2012-08-14 | Ecolab Usa Inc. | Method of disinfecting packages with composition containing peracid and catalase |
| US8298628B2 (en) * | 2008-06-02 | 2012-10-30 | Air Products And Chemicals, Inc. | Low temperature deposition of silicon-containing films |
| WO2010047869A1 (en) | 2008-10-20 | 2010-04-29 | Dow Corning Corporation | Cvd precursors |
| US8703624B2 (en) * | 2009-03-13 | 2014-04-22 | Air Products And Chemicals, Inc. | Dielectric films comprising silicon and methods for making same |
| US8703625B2 (en) | 2010-02-04 | 2014-04-22 | Air Products And Chemicals, Inc. | Methods to prepare silicon-containing films |
| KR101366002B1 (ko) * | 2010-04-09 | 2014-02-21 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치 |
| KR20130135261A (ko) * | 2010-11-03 | 2013-12-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 실리콘 카바이드 및 실리콘 카보나이트라이드 막들을 증착하기 위한 장치 및 방법들 |
| US8575033B2 (en) | 2011-09-13 | 2013-11-05 | Applied Materials, Inc. | Carbosilane precursors for low temperature film deposition |
| US8993072B2 (en) * | 2011-09-27 | 2015-03-31 | Air Products And Chemicals, Inc. | Halogenated organoaminosilane precursors and methods for depositing films comprising same |
| JP6043546B2 (ja) * | 2011-10-21 | 2016-12-14 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| US20130224964A1 (en) | 2012-02-28 | 2013-08-29 | Asm Ip Holding B.V. | Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond |
| US8871656B2 (en) * | 2012-03-05 | 2014-10-28 | Applied Materials, Inc. | Flowable films using alternative silicon precursors |
| US20130288485A1 (en) * | 2012-04-30 | 2013-10-31 | Applied Materials, Inc. | Densification for flowable films |
| US9337018B2 (en) * | 2012-06-01 | 2016-05-10 | Air Products And Chemicals, Inc. | Methods for depositing films with organoaminodisilane precursors |
| US9243324B2 (en) | 2012-07-30 | 2016-01-26 | Air Products And Chemicals, Inc. | Methods of forming non-oxygen containing silicon-based films |
| WO2014134476A1 (en) | 2013-03-01 | 2014-09-04 | Applied Materials, Inc. | LOW TEMPERATURE ATOMIC LAYER DEPOSITION OF FILMS COMPRISING SiCN OR SiCON |
| US9343293B2 (en) | 2013-04-04 | 2016-05-17 | Applied Materials, Inc. | Flowable silicon—carbon—oxygen layers for semiconductor processing |
| US20140302690A1 (en) | 2013-04-04 | 2014-10-09 | Applied Materials, Inc. | Chemical linkers to impart improved mechanical strength to flowable films |
| TWI585230B (zh) * | 2015-02-06 | 2017-06-01 | 氣體產品及化學品股份公司 | 用於碳摻雜的含矽膜的組合物及其方法 |
-
2016
- 2016-02-04 TW TW105103876A patent/TWI585230B/zh active
- 2016-02-04 KR KR1020247009235A patent/KR20240042186A/ko not_active Ceased
- 2016-02-04 KR KR1020197037069A patent/KR20190141034A/ko not_active Ceased
- 2016-02-04 EP EP18201141.1A patent/EP3460827B1/en active Active
- 2016-02-04 KR KR1020227005956A patent/KR102650626B1/ko active Active
- 2016-02-04 US US15/548,884 patent/US10145008B2/en active Active
- 2016-02-04 KR KR1020177025009A patent/KR102058595B1/ko active Active
- 2016-02-04 SG SG10202012631SA patent/SG10202012631SA/en unknown
- 2016-02-04 WO PCT/US2016/016514 patent/WO2016126911A2/en not_active Ceased
- 2016-02-04 CN CN201680019197.0A patent/CN107406978B/zh active Active
- 2016-02-04 EP EP16706464.1A patent/EP3254303B1/en active Active
- 2016-02-04 JP JP2017541257A patent/JP6585724B2/ja active Active
- 2016-02-04 SG SG11201706257YA patent/SG11201706257YA/en unknown
-
2017
- 2017-07-31 IL IL253746A patent/IL253746B/en unknown
-
2019
- 2019-09-05 JP JP2019161923A patent/JP7048548B2/ja active Active
-
2021
- 2021-12-03 JP JP2021196975A patent/JP2022031313A/ja active Pending
-
2023
- 2023-09-27 JP JP2023164716A patent/JP2023182658A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2022031313A5 (enExample) | ||
| JP2023182658A5 (enExample) | ||
| JP2018506185A5 (enExample) | ||
| JP4832643B2 (ja) | 現場での化学発生装置及び方法 | |
| JP6917991B2 (ja) | トリス（ジシラニル）アミン | |
| JP2022008973A5 (enExample) | ||
| JP2009111382A5 (enExample) | ||
| JP2009152551A5 (enExample) | ||
| JP2015111668A5 (enExample) | ||
| KR20140074942A (ko) | 저온 증착용 활성화된 규소 전구체 | |
| JP2009545884A5 (enExample) | ||
| JPWO2022054216A5 (ja) | 基板処理方法、半導体装置の製造方法、基板処理装置、およびプログラム | |
| TW200424346A (en) | Method for forming silicon dioxide film using siloxane | |
| JPH07249618A (ja) | 半導体装置の製造方法 | |
| CN110817852B (zh) | 基于水处理辅助机制的石墨烯制备方法 | |
| JP2000058878A5 (enExample) | ||
| CN102701789A (zh) | 基于Cl2反应的SiC衬底上制备结构化石墨烯的方法 | |
| JPH1140525A (ja) | 珪素系半導体基板の清浄化方法 | |
| CN102653401A (zh) | 基于Ni膜退火的结构化石墨烯制备方法 | |
| CN105977342A (zh) | 一种多晶硅背钝化电池背面原子层沉积制备氧化铝薄膜退火合成工艺 | |
| EP0469824A1 (en) | Method of depositing fluorinated silicon nitride | |
| JPWO2018150452A1 (ja) | 窒化膜成膜方法 | |
| KR20170089422A (ko) | 저온에서의 실리콘-함유 박막 형성방법 | |
| JP2016082010A5 (enExample) | ||
| CN102723258A (zh) | 以SiC为基底的结构化石墨烯制备方法 |