JP2016082010A5 - - Google Patents
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- Publication number
- JP2016082010A5 JP2016082010A5 JP2014210316A JP2014210316A JP2016082010A5 JP 2016082010 A5 JP2016082010 A5 JP 2016082010A5 JP 2014210316 A JP2014210316 A JP 2014210316A JP 2014210316 A JP2014210316 A JP 2014210316A JP 2016082010 A5 JP2016082010 A5 JP 2016082010A5
- Authority
- JP
- Japan
- Prior art keywords
- gas
- silicon nitride
- nitride film
- range
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014210316A JP6236709B2 (ja) | 2014-10-14 | 2014-10-14 | シリコン窒化膜の製造方法及びシリコン窒化膜 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014210316A JP6236709B2 (ja) | 2014-10-14 | 2014-10-14 | シリコン窒化膜の製造方法及びシリコン窒化膜 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016082010A JP2016082010A (ja) | 2016-05-16 |
| JP2016082010A5 true JP2016082010A5 (enExample) | 2016-12-08 |
| JP6236709B2 JP6236709B2 (ja) | 2017-11-29 |
Family
ID=55959113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014210316A Expired - Fee Related JP6236709B2 (ja) | 2014-10-14 | 2014-10-14 | シリコン窒化膜の製造方法及びシリコン窒化膜 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6236709B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2565221B2 (en) | 2011-08-30 | 2018-08-08 | Borealis AG | Process for the manufacture of a capacitor film |
| EP3428959B1 (en) | 2016-03-11 | 2023-03-01 | Taiyo Nippon Sanso Corporation | Method for producing silicon nitride film, and silicon nitride film |
| JP6616365B2 (ja) * | 2017-09-11 | 2019-12-04 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体 |
| JP6997000B2 (ja) * | 2018-02-14 | 2022-01-17 | Ｓｐｐテクノロジーズ株式会社 | シリコン窒化膜の製造方法及び製造装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002017374A1 (en) * | 2000-08-18 | 2002-02-28 | Tokyo Electron Limited | Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof |
| KR100771800B1 (ko) * | 2003-01-24 | 2007-10-30 | 도쿄 엘렉트론 가부시키가이샤 | 피처리 기판 상에 실리콘 질화막을 형성하는 ｃｖｄ 방법 |
| JP4228150B2 (ja) * | 2005-03-23 | 2009-02-25 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
| JP2010103484A (ja) * | 2008-09-29 | 2010-05-06 | Adeka Corp | 半導体デバイス、その製造装置及び製造方法 |
| JP5731841B2 (ja) * | 2011-02-02 | 2015-06-10 | 大陽日酸株式会社 | シリコン窒化膜の形成方法 |
| JP5922352B2 (ja) * | 2011-08-11 | 2016-05-24 | Ｓｐｐテクノロジーズ株式会社 | 窒化膜の製造装置及びその製造方法、並びにその製造プログラム |
| US8592328B2 (en) * | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
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2014
- 2014-10-14 JP JP2014210316A patent/JP6236709B2/ja not_active Expired - Fee Related