JP6236709B2 - シリコン窒化膜の製造方法及びシリコン窒化膜 - Google Patents

シリコン窒化膜の製造方法及びシリコン窒化膜 Download PDF

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JP6236709B2
JP6236709B2 JP2014210316A JP2014210316A JP6236709B2 JP 6236709 B2 JP6236709 B2 JP 6236709B2 JP 2014210316 A JP2014210316 A JP 2014210316A JP 2014210316 A JP2014210316 A JP 2014210316A JP 6236709 B2 JP6236709 B2 JP 6236709B2
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silicon nitride
nitride film
gas
film
process chamber
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Japanese (ja)
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JP2016082010A5 (enExample
JP2016082010A (ja
Inventor
洋志 ▲高▼
洋志 ▲高▼
正也 山脇
正也 山脇
彰一 村上
彰一 村上
晶保 畑下
晶保 畑下
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SPP Technologies Co Ltd
Nippon Sanso Holdings Corp
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SPP Technologies Co Ltd
Taiyo Nippon Sanso Corp
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JP2014210316A 2014-10-14 2014-10-14 シリコン窒化膜の製造方法及びシリコン窒化膜 Active JP6236709B2 (ja)

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JP2014210316A JP6236709B2 (ja) 2014-10-14 2014-10-14 シリコン窒化膜の製造方法及びシリコン窒化膜

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JP2014210316A JP6236709B2 (ja) 2014-10-14 2014-10-14 シリコン窒化膜の製造方法及びシリコン窒化膜

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JP2016082010A JP2016082010A (ja) 2016-05-16
JP2016082010A5 JP2016082010A5 (enExample) 2016-12-08
JP6236709B2 true JP6236709B2 (ja) 2017-11-29

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10253115B2 (en) 2011-08-30 2019-04-09 Borealis Ag Process for the manufacture of a capacitor film

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10559459B2 (en) 2016-03-11 2020-02-11 Taiyo Nippon Sanso Corporation Method for producing silicon nitride film and silicon nitride film
JP6616365B2 (ja) * 2017-09-11 2019-12-04 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体
JP6997000B2 (ja) * 2018-02-14 2022-01-17 Ｓｐｐテクノロジーズ株式会社 シリコン窒化膜の製造方法及び製造装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE60127973T2 (de) * 2000-08-18 2008-01-17 Tokyo Electron Ltd. Herstellungsprozess eines halbleiterbauelements mit einem zwischenfilm aus siliziumnitrid mit niedriger dielektrizitätskonstante
US7094708B2 (en) * 2003-01-24 2006-08-22 Tokyo Electron Limited Method of CVD for forming silicon nitride film on substrate
JP4228150B2 (ja) * 2005-03-23 2009-02-25 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP2010103484A (ja) * 2008-09-29 2010-05-06 Adeka Corp 半導体デバイス、その製造装置及び製造方法
JP5731841B2 (ja) * 2011-02-02 2015-06-10 大陽日酸株式会社 シリコン窒化膜の形成方法
JP5922352B2 (ja) * 2011-08-11 2016-05-24 Ｓｐｐテクノロジーズ株式会社 窒化膜の製造装置及びその製造方法、並びにその製造プログラム
US8592328B2 (en) * 2012-01-20 2013-11-26 Novellus Systems, Inc. Method for depositing a chlorine-free conformal sin film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10253115B2 (en) 2011-08-30 2019-04-09 Borealis Ag Process for the manufacture of a capacitor film

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