JP2016082010A5 - - Google Patents
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- JP2016082010A5 JP2016082010A5 JP2014210316A JP2014210316A JP2016082010A5 JP 2016082010 A5 JP2016082010 A5 JP 2016082010A5 JP 2014210316 A JP2014210316 A JP 2014210316A JP 2014210316 A JP2014210316 A JP 2014210316A JP 2016082010 A5 JP2016082010 A5 JP 2016082010A5
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- gas
- silicon nitride
- nitride film
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- film
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- 239000007789 gas Substances 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N Silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 150000001282 organosilanes Chemical class 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical class O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 125000004435 hydrogen atoms Chemical group [H]* 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- TWXTWZIUMCFMSG-UHFFFAOYSA-N nitride(3-) Chemical compound [N-3] TWXTWZIUMCFMSG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Description
すなわち、本発明は、以下の構成を有する。
請求項１に記載の発明によれば、有機シランガスを原料ガスとして、温度２５０℃以下の基板上に下記（１）〜（３）に示す膜特性を有するシリコン窒化膜を、プラズマ化学気相成長法によって製造する方法であって、１体積流量の前記有機シランガスに対して、２００〜２０００体積流量の水素還元ガスを添加した処理ガスを用い、前記基板を収容したプロセスチャンバー内の圧力を、３５〜４００Ｐａの範囲内に調整し、前記プロセスチャンバー内に設置された電極に印加する高周波の電力密度を、０．４〜３．０Ｗ／ｃｍ２の範囲内に調整することを特徴とするシリコン窒化膜の製造方法を提供する。
（１）フッ酸溶液による被エッチングレートが１０ｎｍ／ｍｉｎ以下
（２）２０８ｋＰａ、１２１℃の飽和水蒸気雰囲気に晒されている間に生じるシリコン酸化物の生成速度がシリコン酸化膜換算で２ｎｍ／ｈｒ以下
（３）膜中の内部応力が、−１０００〜１０００ＭＰａの範囲内
That is, the present invention has the following configuration.
According to the first aspect of the present invention, plasma chemical vapor deposition is performed on a silicon nitride film having the following film characteristics (1) to (3) on a substrate having a temperature of 250 ° C. or lower using an organosilane gas as a source gas. A process gas in which 200 to 2000 volume flow hydrogen reduction gas is added to 1 volume flow organosilane gas, and the pressure in the process chamber containing the substrate is set to 35. silicon adjusted in the range of ～400Pa, the high frequency power density applied to the installed electrodes before Symbol process chamber, and adjusting the range of 0.4~3.0W / cm 2 A method for manufacturing a nitride film is provided.
(1) Rate of etching with hydrofluoric acid solution is 10 nm / min or less (2) Generation rate of silicon oxide generated while exposed to a saturated water vapor atmosphere at 208 kPa and 121 ° C. is 2 nm / hr or less in terms of silicon oxide film (3) The internal stress in the film is within the range of -1000 to 1000 MPa.
また、請求項７に係る発明によれば、下記（１）〜（３）に示す膜特性を有するシリコン窒化膜であって、プラズマ化学気相成長法において、有機シランガスを原料ガスとし、成膜温度を２５０℃以下とするとともに、１体積流量の前記有機シランガスに対して、２００〜２０００体積流量の水素還元ガスを添加した処理ガスを用い、プロセスチャンバー内の圧力を、３５〜４００Ｐａの範囲内に調整し、前記プロセスチャンバー内に設置された電極に印加する高周波の電力密度を、０．４〜３．０Ｗ／ｃｍ２の範囲内に調整して成膜したことを特徴とするシリコン窒化膜が提供される。
（１）フッ酸溶液による被エッチングレートが１０ｎｍ／ｍｉｎ以下
（２）２０８ｋＰａ、１２１℃の飽和水蒸気雰囲気に晒されている間に生じるシリコン酸化物の生成速度がシリコン酸化膜換算で２ｎｍ／ｈｒ以下
（３）膜中の内部応力が、−１０００〜１０００ＭＰａの範囲内
The invention according to claim 7 is a silicon nitride film having the film characteristics shown in the following (1) to (3), and is formed by using an organic silane gas as a source gas in the plasma chemical vapor deposition method. While the temperature is set to 250 ° C. or less, a processing gas obtained by adding a hydrogen reduction gas of 200 to 2000 volume flow rate to the organosilane gas of 1 volume flow rate is used, and the pressure in the process chamber is within a range of 35 to 400 Pa. adjusted, the high-frequency power density applied to the installed electrodes before Symbol process chamber, a silicon nitride, characterized in that the film formation was adjusted to the range of 0.4~3.0W / cm 2 to A membrane is provided.
(1) Rate of etching with hydrofluoric acid solution is 10 nm / min or less (2) Generation rate of silicon oxide generated while exposed to a saturated water vapor atmosphere at 208 kPa and 121 ° C. is 2 nm / hr or less in terms of silicon oxide film (3) The internal stress in the film is within the range of -1000 to 1000 MPa.
Claims (7)
１体積流量の前記有機シランガスに対して、２００〜２０００体積流量の水素還元ガスを添加した処理ガスを用い、
前記基板を収容したプロセスチャンバー内の圧力を、３５〜４００Ｐａの範囲内に調整し、
前記プロセスチャンバー内に設置された電極に印加する高周波の電力密度を、０．４〜３．０Ｗ／ｃｍ２の範囲内に調整することを特徴とするシリコン窒化膜の製造方法。
（１）フッ酸溶液による被エッチングレートが１０ｎｍ／ｍｉｎ以下
（２）２０３ｋＰａ、１２０℃の飽和水蒸気雰囲気に晒されている間に生じるシリコン酸化物の生成速度がシリコン酸化膜換算で２ｎｍ／ｈｒ以下
（３）膜中の内部応力が、−１０００〜１０００ＭＰａの範囲内 A method for producing a silicon nitride film having the film characteristics shown in the following (1) to (3) on a substrate having a temperature of 250 ° C. or lower using an organic silane gas as a source gas by a plasma chemical vapor deposition method,
Using a processing gas obtained by adding 200 to 2000 volume flow of hydrogen reducing gas to 1 volume flow of the organosilane gas,
Adjusting the pressure in the process chamber containing the substrate within a range of 35 to 400 Pa ,
A high frequency power density applied to the installed electrodes before Symbol process chamber, a manufacturing method of a silicon nitride film, which is adjusted to the range of 0.4~3.0W / cm 2.
(1) Rate of etching with hydrofluoric acid solution is 10 nm / min or less (2) Generation rate of silicon oxide generated while exposed to a saturated water vapor atmosphere at 203 kPa and 120 ° C. is 2 nm / hr or less in terms of silicon oxide film (3) The internal stress in the film is within the range of -1000 to 1000 MPa.
（式中、Ｒ１及びＲ２はそれぞれ独立した炭化水素基であり、ｎは２、３、４のいずれかの数である。）
で表される有機シランガスであることを特徴とする、請求項１に記載のシリコン窒化膜の製造方法。 The organosilane gas has the formula (R 1 R 2 N) n SiH 4-n
(In the formula, R 1 and R 2 are each an independent hydrocarbon group, and n is any number of 2, 3, and 4.)
The method of manufacturing a silicon nitride film according to claim 1, wherein the organic silane gas is represented by:
プラズマ化学気相成長法において、有機シランガスを原料ガスとし、成膜温度を２５０℃以下とするとともに、
１体積流量の前記有機シランガスに対して、２００〜２０００体積流量の水素還元ガスを添加した処理ガスを用い、
プロセスチャンバー内の圧力を、３５〜４００Ｐａの範囲内に調整し、
前記プロセスチャンバー内に設置された電極に印加する高周波の電力密度を、０．４〜３．０Ｗ／ｃｍ２の範囲内に調整して成膜したことを特徴とするシリコン窒化膜。
（１）フッ酸溶液による被エッチングレートが１０ｎｍ／ｍｉｎ以下
（２）２０３ｋＰａ、１２０℃の飽和水蒸気雰囲気に晒されている間に生じるシリコン酸化物の生成速度がシリコン酸化膜換算で２ｎｍ／ｈｒ以下
（３）膜中の内部応力が、−１０００〜１０００ＭＰａの範囲内 A silicon nitride film having the following film characteristics (1) to (3),
In the plasma chemical vapor deposition method, an organic silane gas is used as a source gas, a film forming temperature is set to 250 ° C. or less,
Using a processing gas obtained by adding 200 to 2000 volume flow of hydrogen reducing gas to 1 volume flow of the organosilane gas,
Adjusting the pressure in the process chamber within the range of 35 to 400 Pa ,
Before SL process a high frequency power density applied to the installed electrodes in a chamber, a silicon nitride film, which was formed by adjusting the range of 0.4~3.0W / cm 2.
(1) Rate of etching with hydrofluoric acid solution is 10 nm / min or less (2) Generation rate of silicon oxide generated while exposed to a saturated water vapor atmosphere at 203 kPa and 120 ° C. is 2 nm / hr or less in terms of silicon oxide film (3) The internal stress in the film is within the range of -1000 to 1000 MPa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014210316A JP6236709B2 (en) | 2014-10-14 | 2014-10-14 | Silicon nitride film manufacturing method and silicon nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014210316A JP6236709B2 (en) | 2014-10-14 | 2014-10-14 | Silicon nitride film manufacturing method and silicon nitride film |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016082010A JP2016082010A (en) | 2016-05-16 |
| JP2016082010A5 true JP2016082010A5 (en) | 2016-12-08 |
| JP6236709B2 JP6236709B2 (en) | 2017-11-29 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2014210316A Active JP6236709B2 (en) | 2014-10-14 | 2014-10-14 | Silicon nitride film manufacturing method and silicon nitride film |
Country Status (1)
| Country | Link |
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| JP (1) | JP6236709B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2565221B2 (en) | 2011-08-30 | 2018-08-08 | Borealis AG | Process for the manufacture of a capacitor film |
| KR102418092B1 (en) * | 2016-03-11 | 2022-07-06 | 다이요 닛산 가부시키가이샤 | Silicon nitride film manufacturing method and silicon nitride film |
| JP7196074B2 (en) | 2016-08-30 | 2022-12-26 | ダブリュー・アール・グレース・アンド・カンパニー－コーン | Catalyst system for the production of polyolefins and methods of making and using the same |
| JP6616365B2 (en) * | 2017-09-11 | 2019-12-04 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium |
| JP6997000B2 (en) * | 2018-02-14 | 2022-01-17 | Ｓｐｐテクノロジーズ株式会社 | Silicon nitride film manufacturing method and manufacturing equipment |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002017374A1 (en) * | 2000-08-18 | 2002-02-28 | Tokyo Electron Limited | Low-dielectric silicon nitride film and method of forming the same, semiconductor device and fabrication process thereof |
| KR100771800B1 (en) * | 2003-01-24 | 2007-10-30 | 도쿄 엘렉트론 가부시키가이샤 | Method of cvd for forming silicon nitride film on substrate |
| JP4228150B2 (en) * | 2005-03-23 | 2009-02-25 | 東京エレクトロン株式会社 | Film forming apparatus, film forming method, and storage medium |
| JP2010103484A (en) * | 2008-09-29 | 2010-05-06 | Adeka Corp | Semiconductor device, apparatus and method for manufacturing the same |
| JP5731841B2 (en) * | 2011-02-02 | 2015-06-10 | 大陽日酸株式会社 | Method for forming silicon nitride film |
| JP5922352B2 (en) * | 2011-08-11 | 2016-05-24 | Ｓｐｐテクノロジーズ株式会社 | NITRIDE FILM MANUFACTURING DEVICE, ITS MANUFACTURING METHOD, AND ITS MANUFACTURING PROGRAM |
| US8592328B2 (en) * | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
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