JP2022008973A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2022008973A5 JP2022008973A5 JP2021165965A JP2021165965A JP2022008973A5 JP 2022008973 A5 JP2022008973 A5 JP 2022008973A5 JP 2021165965 A JP2021165965 A JP 2021165965A JP 2021165965 A JP2021165965 A JP 2021165965A JP 2022008973 A5 JP2022008973 A5 JP 2022008973A5
- Authority
- JP
- Japan
- Prior art keywords
- disilacyclobutane
- trisilapentane
- reactor
- dimethyl
- diiodo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 239000011261 inert gas Substances 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 239000006227 byproduct Substances 0.000 claims 2
- 238000010926 purge Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- DFQZXUVHEJJUTH-UHFFFAOYSA-N 1,1,3,3-tetrabromo-1,3-disiletane Chemical compound Br[Si]1(Br)C[Si](Br)(Br)C1 DFQZXUVHEJJUTH-UHFFFAOYSA-N 0.000 claims 1
- SYSHGEHAYJKOLC-UHFFFAOYSA-N 1,1,3,3-tetrachloro-1,3-disiletane Chemical compound Cl[Si]1(Cl)C[Si](Cl)(Cl)C1 SYSHGEHAYJKOLC-UHFFFAOYSA-N 0.000 claims 1
- AOBHNRLXHKBAFP-UHFFFAOYSA-N 1,1,3-tribromo-1,3-disiletane Chemical compound Br[SiH]1C[Si](Br)(Br)C1 AOBHNRLXHKBAFP-UHFFFAOYSA-N 0.000 claims 1
- HSAONXZALKRLHL-UHFFFAOYSA-N 1,1,3-trichloro-1,3-disiletane Chemical compound Cl[SiH]1C[Si](Cl)(Cl)C1 HSAONXZALKRLHL-UHFFFAOYSA-N 0.000 claims 1
- YXEUXUWNULSFFD-UHFFFAOYSA-N 1,3-dibromo-1,3-disiletane Chemical compound Br[SiH]1C[SiH](Br)C1 YXEUXUWNULSFFD-UHFFFAOYSA-N 0.000 claims 1
- JLQZGADRJJMDNW-UHFFFAOYSA-N 1,3-dichloro-1,3-dimethyl-1,3-disiletane Chemical compound C[Si]1(Cl)C[Si](C)(Cl)C1 JLQZGADRJJMDNW-UHFFFAOYSA-N 0.000 claims 1
- KLTYEMHFBXTIQP-UHFFFAOYSA-N 1,3-dichloro-1,3-disiletane Chemical compound Cl[SiH]1C[SiH](Cl)C1 KLTYEMHFBXTIQP-UHFFFAOYSA-N 0.000 claims 1
- GPWWAMQYZRLMDJ-UHFFFAOYSA-N 1-bromo-1,3-disiletane Chemical compound Br[SiH]1C[SiH2]C1 GPWWAMQYZRLMDJ-UHFFFAOYSA-N 0.000 claims 1
- KFEPWALDYLJNIO-UHFFFAOYSA-N 1-chloro-1,3-disiletane Chemical compound Cl[SiH]1C[SiH2]C1 KFEPWALDYLJNIO-UHFFFAOYSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- PYAYAYQEBLRVBE-UHFFFAOYSA-N Cl[SiH](C[SiH2]C[SiH](Cl)Cl)Cl Chemical compound Cl[SiH](C[SiH2]C[SiH](Cl)Cl)Cl PYAYAYQEBLRVBE-UHFFFAOYSA-N 0.000 claims 1
- KHCWYTBRWQUTQJ-UHFFFAOYSA-N Cl[Si](C[SiH2]C[Si](Cl)(Cl)Cl)(Cl)Cl Chemical compound Cl[Si](C[SiH2]C[Si](Cl)(Cl)Cl)(Cl)Cl KHCWYTBRWQUTQJ-UHFFFAOYSA-N 0.000 claims 1
- IBQXDUKVYOFNNE-UHFFFAOYSA-N Cl[Si](C[Si](C[Si](Cl)(Cl)Cl)(C)C)(Cl)Cl Chemical compound Cl[Si](C[Si](C[Si](Cl)(Cl)Cl)(C)C)(Cl)Cl IBQXDUKVYOFNNE-UHFFFAOYSA-N 0.000 claims 1
- OSDVQTFYZSIHNB-UHFFFAOYSA-N I[SiH]1C[SiH2]C1 Chemical compound I[SiH]1C[SiH2]C1 OSDVQTFYZSIHNB-UHFFFAOYSA-N 0.000 claims 1
- VTCFWRLUGBYBBE-UHFFFAOYSA-N I[SiH]1C[SiH](C1)I Chemical compound I[SiH]1C[SiH](C1)I VTCFWRLUGBYBBE-UHFFFAOYSA-N 0.000 claims 1
- PUQYCPQNZPTQOZ-UHFFFAOYSA-N I[Si]1(C[SiH2]C1)I Chemical compound I[Si]1(C[SiH2]C1)I PUQYCPQNZPTQOZ-UHFFFAOYSA-N 0.000 claims 1
- PSMRFQSRRZRAPO-UHFFFAOYSA-N I[Si]1(C[Si](C1)(C)I)C Chemical compound I[Si]1(C[Si](C1)(C)I)C PSMRFQSRRZRAPO-UHFFFAOYSA-N 0.000 claims 1
- UNVFLHYMVYCQNV-UHFFFAOYSA-N I[Si]1(C[Si](C1)(I)I)I Chemical compound I[Si]1(C[Si](C1)(I)I)I UNVFLHYMVYCQNV-UHFFFAOYSA-N 0.000 claims 1
- WOSFPOAFHQOIKW-UHFFFAOYSA-N [SiH]1(I)C[Si](I)(I)C1 Chemical compound [SiH]1(I)C[Si](I)(I)C1 WOSFPOAFHQOIKW-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- CEDXXYXHWATVPK-UHFFFAOYSA-N bis(bromosilylmethyl)silane Chemical compound Br[SiH2]C[SiH2]C[SiH2]Br CEDXXYXHWATVPK-UHFFFAOYSA-N 0.000 claims 1
- UKDBWKMRERNIQH-UHFFFAOYSA-N bis(chlorosilylmethyl)silane Chemical compound Cl[SiH2]C[SiH2]C[SiH2]Cl UKDBWKMRERNIQH-UHFFFAOYSA-N 0.000 claims 1
- KSBGKOHSBWCTOP-UHFFFAOYSA-N bis(silylmethyl)silane Chemical compound [SiH3]C[SiH2]C[SiH3] KSBGKOHSBWCTOP-UHFFFAOYSA-N 0.000 claims 1
- SRAOOUMRJYPWQR-UHFFFAOYSA-N bromo(silylmethylsilylmethyl)silane Chemical compound [SiH3]C[SiH2]C[SiH2]Br SRAOOUMRJYPWQR-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- BFHLENGGTGYFLY-UHFFFAOYSA-N chloro(silylmethylsilylmethyl)silane Chemical compound [SiH3]C[SiH2]C[SiH2]Cl BFHLENGGTGYFLY-UHFFFAOYSA-N 0.000 claims 1
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- XDESNYGGKKUBOV-UHFFFAOYSA-N dichloro-[[chloro-[[dichloro(methyl)silyl]methyl]-methylsilyl]methyl]-methylsilane Chemical compound C[Si](Cl)(Cl)C[Si](C)(Cl)C[Si](C)(Cl)Cl XDESNYGGKKUBOV-UHFFFAOYSA-N 0.000 claims 1
- DMBOORLKGDADEQ-UHFFFAOYSA-N dichloro-bis[[dichloro(methyl)silyl]methyl]silane Chemical compound C[Si](Cl)(Cl)C[Si](Cl)(Cl)C[Si](C)(Cl)Cl DMBOORLKGDADEQ-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- YDKOBMPZZDGZPP-UHFFFAOYSA-N iodo(silylmethylsilylmethyl)silane Chemical compound I[SiH2]C[SiH2]C[SiH3] YDKOBMPZZDGZPP-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000002243 precursor Substances 0.000 claims 1
- 239000012686 silicon precursor Substances 0.000 claims 1
- RNRQKQHZWFHUHS-UHFFFAOYSA-N trichloro-[[dichloro(trichlorosilylmethyl)silyl]methyl]silane Chemical compound Cl[Si](Cl)(Cl)C[Si](Cl)(Cl)C[Si](Cl)(Cl)Cl RNRQKQHZWFHUHS-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862724109P | 2018-08-29 | 2018-08-29 | |
| US62/724,109 | 2018-08-29 | ||
| US16/553,080 US20200071819A1 (en) | 2018-08-29 | 2019-08-27 | Methods For Making Silicon Containing Films That Have High Carbon Content |
| US16/553,080 | 2019-08-27 | ||
| JP2019157143A JP6999620B2 (ja) | 2018-08-29 | 2019-08-29 | 高い炭素含有量を有する炭素ドープ酸化ケイ素膜および炭化ケイ素膜の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019157143A Division JP6999620B2 (ja) | 2018-08-29 | 2019-08-29 | 高い炭素含有量を有する炭素ドープ酸化ケイ素膜および炭化ケイ素膜の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2022008973A JP2022008973A (ja) | 2022-01-14 |
| JP2022008973A5 true JP2022008973A5 (enExample) | 2022-09-06 |
Family
ID=67809388
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019157143A Active JP6999620B2 (ja) | 2018-08-29 | 2019-08-29 | 高い炭素含有量を有する炭素ドープ酸化ケイ素膜および炭化ケイ素膜の製造方法 |
| JP2021165965A Withdrawn JP2022008973A (ja) | 2018-08-29 | 2021-10-08 | 高い炭素含有量を有するケイ素含有膜の製造方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019157143A Active JP6999620B2 (ja) | 2018-08-29 | 2019-08-29 | 高い炭素含有量を有する炭素ドープ酸化ケイ素膜および炭化ケイ素膜の製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20200071819A1 (enExample) |
| EP (1) | EP3620550B1 (enExample) |
| JP (2) | JP6999620B2 (enExample) |
| KR (3) | KR20200026148A (enExample) |
| CN (1) | CN110872700B (enExample) |
| SG (1) | SG10201907962WA (enExample) |
| TW (1) | TWI762809B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180033614A1 (en) * | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
| TWI764068B (zh) * | 2019-01-11 | 2022-05-11 | 日商國際電氣股份有限公司 | 半導體裝置之製造方法、基板處理方法、基板處理裝置及程式 |
| KR20250153305A (ko) * | 2019-09-18 | 2025-10-24 | 가부시키가이샤 코쿠사이 엘렉트릭 | 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램 |
| CN111453695B (zh) * | 2020-06-16 | 2020-10-16 | 中芯集成电路制造(绍兴)有限公司 | 氧化硅层的刻蚀方法、mems器件及其形成方法 |
| US12264392B2 (en) | 2020-06-23 | 2025-04-01 | Entegris, Inc. | Silicon precursor compounds and method for forming silicon-containing films |
| WO2022020705A1 (en) * | 2020-07-24 | 2022-01-27 | Versum Materials Us, Llc | Compositions and methods using same for germanium seed layer |
| US20220091513A1 (en) * | 2020-09-18 | 2022-03-24 | Applied Materials, Inc. | Film structure for electric field assisted bake process |
| EP4222293A1 (en) * | 2020-09-30 | 2023-08-09 | Gelest, Inc. | Silicon carbide thin films and vapor deposition methods thereof |
| JP2024505193A (ja) * | 2021-01-26 | 2024-02-05 | インテグリス・インコーポレーテッド | 高スループット堆積方法 |
| CN116917535A (zh) * | 2021-03-02 | 2023-10-20 | 弗萨姆材料美国有限责任公司 | 硅介电膜的选择性淀积 |
| JP2024508907A (ja) * | 2021-03-02 | 2024-02-28 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | シリコン及びホウ素を含む膜用の組成物及びそれを用いる方法 |
| US20240087881A1 (en) * | 2022-08-26 | 2024-03-14 | Applied Materials, Inc. | Systems and methods for depositing low-k dielectric films |
| US20250357107A1 (en) * | 2024-05-16 | 2025-11-20 | Applied Materials, Inc. | Rf pulsing assisted low-k material deposition with high density |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2614338B2 (ja) | 1990-01-11 | 1997-05-28 | 株式会社東芝 | 液体ソース容器 |
| US5465766A (en) | 1993-04-28 | 1995-11-14 | Advanced Delivery & Chemical Systems, Inc. | Chemical refill system for high purity chemicals |
| KR100364115B1 (ko) | 1996-12-17 | 2002-12-11 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 화학 증착용 시약 공급 용기 |
| US6953047B2 (en) | 2002-01-14 | 2005-10-11 | Air Products And Chemicals, Inc. | Cabinet for chemical delivery with solvent purging |
| EP1504138A2 (en) | 2002-05-08 | 2005-02-09 | Applied Materials, Inc. | Method for using low dielectric constant film by electron beam |
| US8241624B2 (en) | 2008-04-18 | 2012-08-14 | Ecolab Usa Inc. | Method of disinfecting packages with composition containing peracid and catalase |
| JP5421736B2 (ja) | 2009-11-13 | 2014-02-19 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、及びプログラム |
| JP5530744B2 (ja) | 2010-02-15 | 2014-06-25 | 大陽日酸株式会社 | 絶縁膜のダメージ回復方法及びダメージが回復された絶縁膜 |
| WO2012039833A2 (en) | 2010-09-24 | 2012-03-29 | Applied Materials, Inc. | Low temperature silicon carbide deposition process |
| KR20130135261A (ko) * | 2010-11-03 | 2013-12-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 실리콘 카바이드 및 실리콘 카보나이트라이드 막들을 증착하기 위한 장치 및 방법들 |
| CN102487035B (zh) * | 2010-12-01 | 2014-03-19 | 中芯国际集成电路制造(上海)有限公司 | 具有多孔结构的超低介电常数的层间介质的淀积方法 |
| US8575033B2 (en) | 2011-09-13 | 2013-11-05 | Applied Materials, Inc. | Carbosilane precursors for low temperature film deposition |
| US8722546B2 (en) | 2012-06-11 | 2014-05-13 | Asm Ip Holding B.V. | Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control |
| US9234276B2 (en) | 2013-05-31 | 2016-01-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
| WO2014134476A1 (en) | 2013-03-01 | 2014-09-04 | Applied Materials, Inc. | LOW TEMPERATURE ATOMIC LAYER DEPOSITION OF FILMS COMPRISING SiCN OR SiCON |
| JP6112928B2 (ja) | 2013-03-19 | 2017-04-12 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置及びプログラム |
| JP5864637B2 (ja) | 2013-03-19 | 2016-02-17 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
| JP6155063B2 (ja) | 2013-03-19 | 2017-06-28 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置及びプログラム |
| US9796739B2 (en) * | 2013-06-26 | 2017-10-24 | Versum Materials Us, Llc | AZA-polysilane precursors and methods for depositing films comprising same |
| JP6125946B2 (ja) | 2013-08-08 | 2017-05-10 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置及びプログラム |
| US10023958B2 (en) * | 2013-11-22 | 2018-07-17 | Applied Materials, Inc. | Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursors |
| JP5883049B2 (ja) * | 2014-03-04 | 2016-03-09 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体 |
| TWI585230B (zh) * | 2015-02-06 | 2017-06-01 | 氣體產品及化學品股份公司 | 用於碳摻雜的含矽膜的組合物及其方法 |
| US9455138B1 (en) | 2015-11-10 | 2016-09-27 | Asm Ip Holding B.V. | Method for forming dielectric film in trenches by PEALD using H-containing gas |
| US20180033614A1 (en) * | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
-
2019
- 2019-08-27 US US16/553,080 patent/US20200071819A1/en not_active Abandoned
- 2019-08-28 TW TW108130790A patent/TWI762809B/zh active
- 2019-08-29 EP EP19194473.5A patent/EP3620550B1/en active Active
- 2019-08-29 JP JP2019157143A patent/JP6999620B2/ja active Active
- 2019-08-29 KR KR1020190106924A patent/KR20200026148A/ko not_active Ceased
- 2019-08-29 SG SG10201907962WA patent/SG10201907962WA/en unknown
- 2019-08-29 CN CN201910809682.3A patent/CN110872700B/zh active Active
-
2021
- 2021-10-08 JP JP2021165965A patent/JP2022008973A/ja not_active Withdrawn
-
2022
- 2022-01-25 US US17/584,120 patent/US20220145453A1/en active Pending
- 2022-09-30 KR KR1020220125423A patent/KR20220137605A/ko not_active Ceased
-
2025
- 2025-02-28 KR KR1020250026475A patent/KR20250034358A/ko active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2022008973A5 (enExample) | ||
| JP2023182658A5 (enExample) | ||
| JP2022031313A5 (enExample) | ||
| JP2015159306A5 (enExample) | ||
| CN106992114B (zh) | 含硅薄膜的高温原子层沉积 | |
| JP6106278B2 (ja) | 半導体装置の製造方法、基板処理装置およびプログラム | |
| IL273146B1 (en) | Compositions and methods for depositing silicon-containing films | |
| JP5886366B2 (ja) | 半導体装置の製造方法、基板処理装置、プログラムおよび記録媒体 | |
| US9330903B2 (en) | Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium | |
| JP5855691B2 (ja) | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 | |
| JP2009111382A5 (enExample) | ||
| JP2018506185A5 (enExample) | ||
| SG146567A1 (en) | Improved gap-fill depositions in the formation of silicon containing dielectric materials | |
| KR20140074942A (ko) | 저온 증착용 활성화된 규소 전구체 | |
| JP2011181681A (ja) | 原子層堆積方法及び原子層堆積装置 | |
| JP6490374B2 (ja) | 半導体装置の製造方法、基板処理装置およびプログラム | |
| JP2016147861A5 (enExample) | ||
| JP2011066060A5 (enExample) | ||
| JP2007051327A5 (enExample) | ||
| JP2009209434A (ja) | 薄膜形成装置 | |
| KR102555781B1 (ko) | 주석-함유 전구체들 및 주석-함유 막들을 증착시키는 방법들 | |
| TWI481615B (zh) | 用於錳的原子層沉積之前驅物及方法 | |
| JP6651663B1 (ja) | アミノシラン化合物、前記アミノシラン化合物を含むシリコン含有膜形成用の組成物 | |
| KR101597585B1 (ko) | 광활성 티타늄산화물의 제조방법 | |
| TW201435132A (zh) | 包含ＳｉＯＣ的膜的催化性原子層沉積 |