JP2005317980A5 - - Google Patents
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- Publication number
- JP2005317980A5 JP2005317980A5 JP2005131468A JP2005131468A JP2005317980A5 JP 2005317980 A5 JP2005317980 A5 JP 2005317980A5 JP 2005131468 A JP2005131468 A JP 2005131468A JP 2005131468 A JP2005131468 A JP 2005131468A JP 2005317980 A5 JP2005317980 A5 JP 2005317980A5
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- chemical vapor
- conditions
- rtcvd
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 21
- PHUNDLUSWHZQPF-UHFFFAOYSA-N bis(tert-butylamino)silicon Chemical compound CC(C)(C)N[Si]NC(C)(C)C PHUNDLUSWHZQPF-UHFFFAOYSA-N 0.000 claims 14
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 claims 13
- 150000001875 compounds Chemical class 0.000 claims 10
- 150000004767 nitrides Chemical class 0.000 claims 9
- 239000002243 precursor Substances 0.000 claims 8
- 229910052799 carbon Inorganic materials 0.000 claims 7
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 6
- 229910052757 nitrogen Inorganic materials 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000007858 starting material Substances 0.000 claims 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 4
- 239000007795 chemical reaction product Substances 0.000 claims 3
- 238000005229 chemical vapour deposition Methods 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims 2
- 229910000077 silane Inorganic materials 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 239000000047 product Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/835,949 US7001844B2 (en) | 2004-04-30 | 2004-04-30 | Material for contact etch layer to enhance device performance |
| US10/835949 | 2004-04-30 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005317980A JP2005317980A (ja) | 2005-11-10 |
| JP2005317980A5 true JP2005317980A5 (enExample) | 2008-05-08 |
| JP4906270B2 JP4906270B2 (ja) | 2012-03-28 |
Family
ID=35187673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005131468A Expired - Fee Related JP4906270B2 (ja) | 2004-04-30 | 2005-04-28 | デバイス性能を向上させるコンタクト・エッチング層用の新材料 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US7001844B2 (enExample) |
| JP (1) | JP4906270B2 (enExample) |
| CN (1) | CN100459065C (enExample) |
| TW (1) | TWI378505B (enExample) |
Families Citing this family (53)
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| US7119016B2 (en) * | 2003-10-15 | 2006-10-10 | International Business Machines Corporation | Deposition of carbon and nitrogen doped poly silicon films, and retarded boron diffusion and improved poly depletion |
| US20050287747A1 (en) * | 2004-06-29 | 2005-12-29 | International Business Machines Corporation | Doped nitride film, doped oxide film and other doped films |
| US20060045986A1 (en) * | 2004-08-30 | 2006-03-02 | Hochberg Arthur K | Silicon nitride from aminosilane using PECVD |
| US7268399B2 (en) * | 2004-08-31 | 2007-09-11 | Texas Instruments Incorporated | Enhanced PMOS via transverse stress |
| US20060099763A1 (en) * | 2004-10-28 | 2006-05-11 | Yi-Cheng Liu | Method of manufacturing semiconductor mos transistor device |
| JP2006165335A (ja) * | 2004-12-08 | 2006-06-22 | Toshiba Corp | 半導体装置 |
| US20060172556A1 (en) * | 2005-02-01 | 2006-08-03 | Texas Instruments Incorporated | Semiconductor device having a high carbon content strain inducing film and a method of manufacture therefor |
| US7265015B2 (en) * | 2005-06-30 | 2007-09-04 | Promos Technologies Inc. | Use of chlorine to fabricate trench dielectric in integrated circuits |
| WO2007072537A1 (ja) * | 2005-12-19 | 2007-06-28 | Fujitsu Limited | 半導体装置及びその半導体装置の製造方法 |
| US20070196991A1 (en) * | 2006-02-01 | 2007-08-23 | Texas Instruments Incorporated | Semiconductor device having a strain inducing sidewall spacer and a method of manufacture therefor |
| US8017472B2 (en) * | 2006-02-17 | 2011-09-13 | Infineon Technologies Ag | CMOS devices having stress-altering material lining the isolation trenches and methods of manufacturing thereof |
| US7790540B2 (en) * | 2006-08-25 | 2010-09-07 | International Business Machines Corporation | Structure and method to use low k stress liner to reduce parasitic capacitance |
| JP2008053553A (ja) * | 2006-08-25 | 2008-03-06 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| US20080096331A1 (en) * | 2006-10-04 | 2008-04-24 | Neng-Kuo Chen | Method for fabricating high compressive stress film and strained-silicon transistors |
| CN101192533B (zh) * | 2006-11-28 | 2010-06-16 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法、蚀刻阻挡层的形成方法 |
| US20080293194A1 (en) * | 2007-05-24 | 2008-11-27 | Neng-Kuo Chen | Method of making a P-type metal-oxide semiconductor transistor and method of making a complementary metal-oxide semiconductor transistor |
| JP5309619B2 (ja) * | 2008-03-07 | 2013-10-09 | ソニー株式会社 | 半導体装置およびその製造方法 |
| US8728956B2 (en) | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
| US9373500B2 (en) | 2014-02-21 | 2016-06-21 | Lam Research Corporation | Plasma assisted atomic layer deposition titanium oxide for conformal encapsulation and gapfill applications |
| US9257274B2 (en) | 2010-04-15 | 2016-02-09 | Lam Research Corporation | Gapfill of variable aspect ratio features with a composite PEALD and PECVD method |
| US9390909B2 (en) | 2013-11-07 | 2016-07-12 | Novellus Systems, Inc. | Soft landing nanolaminates for advanced patterning |
| US8637411B2 (en) | 2010-04-15 | 2014-01-28 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
| US8956983B2 (en) | 2010-04-15 | 2015-02-17 | Novellus Systems, Inc. | Conformal doping via plasma activated atomic layer deposition and conformal film deposition |
| US9997357B2 (en) | 2010-04-15 | 2018-06-12 | Lam Research Corporation | Capped ALD films for doping fin-shaped channel regions of 3-D IC transistors |
| US9892917B2 (en) | 2010-04-15 | 2018-02-13 | Lam Research Corporation | Plasma assisted atomic layer deposition of multi-layer films for patterning applications |
| US9287113B2 (en) | 2012-11-08 | 2016-03-15 | Novellus Systems, Inc. | Methods for depositing films on sensitive substrates |
| US9611544B2 (en) | 2010-04-15 | 2017-04-04 | Novellus Systems, Inc. | Plasma activated conformal dielectric film deposition |
| US9076646B2 (en) | 2010-04-15 | 2015-07-07 | Lam Research Corporation | Plasma enhanced atomic layer deposition with pulsed plasma exposure |
| US8524612B2 (en) | 2010-09-23 | 2013-09-03 | Novellus Systems, Inc. | Plasma-activated deposition of conformal films |
| US9685320B2 (en) | 2010-09-23 | 2017-06-20 | Lam Research Corporation | Methods for depositing silicon oxide |
| KR101789592B1 (ko) | 2010-11-08 | 2017-10-25 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
| US8647993B2 (en) | 2011-04-11 | 2014-02-11 | Novellus Systems, Inc. | Methods for UV-assisted conformal film deposition |
| JP5975617B2 (ja) | 2011-10-06 | 2016-08-23 | キヤノン株式会社 | 固体撮像装置およびその製造方法ならびにカメラ |
| US8592328B2 (en) | 2012-01-20 | 2013-11-26 | Novellus Systems, Inc. | Method for depositing a chlorine-free conformal sin film |
| US8728955B2 (en) | 2012-02-14 | 2014-05-20 | Novellus Systems, Inc. | Method of plasma activated deposition of a conformal film on a substrate surface |
| KR102207992B1 (ko) | 2012-10-23 | 2021-01-26 | 램 리써치 코포레이션 | 서브-포화된 원자층 증착 및 등각막 증착 |
| SG2013083241A (en) | 2012-11-08 | 2014-06-27 | Novellus Systems Inc | Conformal film deposition for gapfill |
| US8796098B1 (en) * | 2013-02-26 | 2014-08-05 | Cypress Semiconductor Corporation | Embedded SONOS based memory cells |
| CN103247649A (zh) * | 2013-05-07 | 2013-08-14 | 上海华力微电子有限公司 | 减小图像传感器电学互扰的方法 |
| US9214334B2 (en) | 2014-02-18 | 2015-12-15 | Lam Research Corporation | High growth rate process for conformal aluminum nitride |
| US9478438B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method and apparatus to deposit pure titanium thin film at low temperature using titanium tetraiodide precursor |
| US9478411B2 (en) | 2014-08-20 | 2016-10-25 | Lam Research Corporation | Method to tune TiOx stoichiometry using atomic layer deposited Ti film to minimize contact resistance for TiOx/Ti based MIS contact scheme for CMOS |
| US9564312B2 (en) | 2014-11-24 | 2017-02-07 | Lam Research Corporation | Selective inhibition in atomic layer deposition of silicon-containing films |
| US10566187B2 (en) | 2015-03-20 | 2020-02-18 | Lam Research Corporation | Ultrathin atomic layer deposition film accuracy thickness control |
| US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
| US10526701B2 (en) | 2015-07-09 | 2020-01-07 | Lam Research Corporation | Multi-cycle ALD process for film uniformity and thickness profile modulation |
| US9773643B1 (en) | 2016-06-30 | 2017-09-26 | Lam Research Corporation | Apparatus and method for deposition and etch in gap fill |
| US10062563B2 (en) | 2016-07-01 | 2018-08-28 | Lam Research Corporation | Selective atomic layer deposition with post-dose treatment |
| US10037884B2 (en) | 2016-08-31 | 2018-07-31 | Lam Research Corporation | Selective atomic layer deposition for gapfill using sacrificial underlayer |
| US10269559B2 (en) | 2017-09-13 | 2019-04-23 | Lam Research Corporation | Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer |
| US10541309B2 (en) | 2017-12-25 | 2020-01-21 | United Microelectronics Corp | Semiconductor structure and method for fabricating the same |
| US12040181B2 (en) | 2019-05-01 | 2024-07-16 | Lam Research Corporation | Modulated atomic layer deposition |
| US12431349B2 (en) | 2019-06-07 | 2025-09-30 | Lam Research Corporation | In-situ control of film properties during atomic layer deposition |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5519850A (en) * | 1978-07-31 | 1980-02-12 | Hitachi Ltd | Semiconductor |
| JP3211301B2 (ja) * | 1991-11-07 | 2001-09-25 | カシオ計算機株式会社 | 窒化シリコン膜 |
| US20020062065A1 (en) * | 1993-02-22 | 2002-05-23 | Daniel S. Christopher | Endoscopic retraction system and method |
| US5633202A (en) * | 1994-09-30 | 1997-05-27 | Intel Corporation | High tensile nitride layer |
| US5874368A (en) * | 1997-10-02 | 1999-02-23 | Air Products And Chemicals, Inc. | Silicon nitride from bis(tertiarybutylamino)silane |
| US6251802B1 (en) * | 1998-10-19 | 2001-06-26 | Micron Technology, Inc. | Methods of forming carbon-containing layers |
| US6153261A (en) * | 1999-05-28 | 2000-11-28 | Applied Materials, Inc. | Dielectric film deposition employing a bistertiarybutylaminesilane precursor |
| JP2002083812A (ja) * | 1999-06-29 | 2002-03-22 | Semiconductor Energy Lab Co Ltd | 配線材料およびこれを用いた配線を備えた半導体装置およびその作製方法 |
| JP2001156065A (ja) * | 1999-11-24 | 2001-06-08 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および半導体製造装置 |
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| US6518626B1 (en) * | 2000-02-22 | 2003-02-11 | Micron Technology, Inc. | Method of forming low dielectric silicon oxynitride spacer films highly selective of etchants |
| US6515350B1 (en) | 2000-02-22 | 2003-02-04 | Micron Technology, Inc. | Protective conformal silicon nitride films and spacers |
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| US6268299B1 (en) * | 2000-09-25 | 2001-07-31 | International Business Machines Corporation | Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability |
| US7312485B2 (en) * | 2000-11-29 | 2007-12-25 | Intel Corporation | CMOS fabrication process utilizing special transistor orientation |
| US6586814B1 (en) * | 2000-12-11 | 2003-07-01 | Lsi Logic Corporation | Etch resistant shallow trench isolation in a semiconductor wafer |
| JP2002198368A (ja) * | 2000-12-26 | 2002-07-12 | Nec Corp | 半導体装置の製造方法 |
| US20020127763A1 (en) * | 2000-12-28 | 2002-09-12 | Mohamed Arafa | Sidewall spacers and methods of making same |
| US6500772B2 (en) * | 2001-01-08 | 2002-12-31 | International Business Machines Corporation | Methods and materials for depositing films on semiconductor substrates |
| JP4831885B2 (ja) * | 2001-04-27 | 2011-12-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6391803B1 (en) * | 2001-06-20 | 2002-05-21 | Samsung Electronics Co., Ltd. | Method of forming silicon containing thin films by atomic layer deposition utilizing trisdimethylaminosilane |
| JP4897159B2 (ja) | 2001-08-03 | 2012-03-14 | 株式会社日立国際電気 | 半導体装置の製造方法 |
| JP2003060076A (ja) * | 2001-08-21 | 2003-02-28 | Nec Corp | 半導体装置及びその製造方法 |
| US20030059535A1 (en) * | 2001-09-25 | 2003-03-27 | Lee Luo | Cycling deposition of low temperature films in a cold wall single wafer process chamber |
| JP3997089B2 (ja) * | 2002-01-10 | 2007-10-24 | 株式会社ルネサステクノロジ | 半導体装置 |
| US6573172B1 (en) * | 2002-09-16 | 2003-06-03 | Advanced Micro Devices, Inc. | Methods for improving carrier mobility of PMOS and NMOS devices |
| US6812073B2 (en) * | 2002-12-10 | 2004-11-02 | Texas Instrument Incorporated | Source drain and extension dopant concentration |
| US7601860B2 (en) * | 2003-10-10 | 2009-10-13 | Advanced Technology Materials, Inc. | Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films |
| US20050109276A1 (en) * | 2003-11-25 | 2005-05-26 | Applied Materials, Inc. | Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber |
-
2004
- 2004-04-30 US US10/835,949 patent/US7001844B2/en not_active Expired - Fee Related
-
2005
- 2005-03-17 CN CNB2005100554573A patent/CN100459065C/zh not_active Expired - Fee Related
- 2005-04-08 TW TW094111139A patent/TWI378505B/zh not_active IP Right Cessation
- 2005-04-28 JP JP2005131468A patent/JP4906270B2/ja not_active Expired - Fee Related
- 2005-10-20 US US11/253,622 patent/US20060040497A1/en not_active Abandoned
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