JP2013546182A5 - - Google Patents
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- Publication number
- JP2013546182A5 JP2013546182A5 JP2013537729A JP2013537729A JP2013546182A5 JP 2013546182 A5 JP2013546182 A5 JP 2013546182A5 JP 2013537729 A JP2013537729 A JP 2013537729A JP 2013537729 A JP2013537729 A JP 2013537729A JP 2013546182 A5 JP2013546182 A5 JP 2013546182A5
- Authority
- JP
- Japan
- Prior art keywords
- nitrogen
- carbon
- gas
- bond
- intramolecular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 32
- 239000007789 gas Substances 0.000 claims 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 15
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical compound [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 claims 10
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims 9
- 229910052757 nitrogen Inorganic materials 0.000 claims 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 8
- 229910052799 carbon Inorganic materials 0.000 claims 8
- 239000000758 substrate Substances 0.000 claims 8
- 229910052710 silicon Inorganic materials 0.000 claims 7
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims 6
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 claims 6
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims 6
- 229910052760 oxygen Inorganic materials 0.000 claims 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 claims 3
- 229910052736 halogen Inorganic materials 0.000 claims 3
- 150000002367 halogens Chemical group 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- DAZXVJBJRMWXJP-UHFFFAOYSA-N n,n-dimethylethylamine Chemical compound CCN(C)C DAZXVJBJRMWXJP-UHFFFAOYSA-N 0.000 claims 3
- GNVRJGIVDSQCOP-UHFFFAOYSA-N n-ethyl-n-methylethanamine Chemical compound CCN(C)CC GNVRJGIVDSQCOP-UHFFFAOYSA-N 0.000 claims 3
- 229910052755 nonmetal Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 235000007173 Abies balsamea Nutrition 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- 241000218685 Tsuga Species 0.000 claims 2
- RBFRSIRIVOFKDR-UHFFFAOYSA-N [C].[N].[O] Chemical compound [C].[N].[O] RBFRSIRIVOFKDR-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 229910000077 silane Inorganic materials 0.000 claims 2
- 150000003973 alkyl amines Chemical class 0.000 claims 1
- 150000002843 nonmetals Chemical class 0.000 claims 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41015510P | 2010-11-04 | 2010-11-04 | |
| US61/410,155 | 2010-11-04 | ||
| US13/073,957 | 2011-03-28 | ||
| US13/073,957 US8962454B2 (en) | 2010-11-04 | 2011-03-28 | Method of depositing dielectric films using microwave plasma |
| PCT/US2011/058283 WO2012061232A2 (en) | 2010-11-04 | 2011-10-28 | Method of depositing dielectric films using microwave plasma |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013546182A JP2013546182A (ja) | 2013-12-26 |
| JP2013546182A5 true JP2013546182A5 (enExample) | 2014-11-27 |
| JP6025735B2 JP6025735B2 (ja) | 2016-11-16 |
Family
ID=46020025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013537729A Expired - Fee Related JP6025735B2 (ja) | 2010-11-04 | 2011-10-28 | マイクロ波プラズマを用いる誘電膜堆積方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8962454B2 (enExample) |
| JP (1) | JP6025735B2 (enExample) |
| KR (2) | KR101959183B1 (enExample) |
| TW (1) | TWI476294B (enExample) |
| WO (1) | WO2012061232A2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2883971B1 (fr) | 2005-03-31 | 2007-11-16 | C2 Diagnostics Sa | Dispositif optique d'analyse sanguine, appareil d'analyse equipe d'un tel dispositif |
| CN103270578B (zh) * | 2010-12-30 | 2016-10-26 | 应用材料公司 | 使用微波等离子体的薄膜沉积 |
| JP2013026265A (ja) * | 2011-07-15 | 2013-02-04 | Sony Corp | プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法 |
| JP5951443B2 (ja) * | 2011-12-09 | 2016-07-13 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
| US9177787B2 (en) | 2013-03-15 | 2015-11-03 | Applied Materials, Inc. | NH3 containing plasma nitridation of a layer of a three dimensional structure on a substrate |
| KR102458923B1 (ko) | 2016-02-01 | 2022-10-25 | 삼성전자주식회사 | 집적회로 소자 및 그 제조 방법 |
| JP6777614B2 (ja) | 2017-09-26 | 2020-10-28 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置、およびプログラム |
| US11075113B2 (en) * | 2018-06-29 | 2021-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal capping layer and methods thereof |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003027238A (ja) * | 2001-07-09 | 2003-01-29 | Canon Inc | 堆積膜形成方法 |
| US7078336B2 (en) | 2003-11-19 | 2006-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current |
| US7163877B2 (en) * | 2004-08-18 | 2007-01-16 | Tokyo Electron Limited | Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing |
| JP4149427B2 (ja) | 2004-10-07 | 2008-09-10 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
| JP5121698B2 (ja) | 2006-03-06 | 2013-01-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP5161086B2 (ja) * | 2006-07-28 | 2013-03-13 | 東京エレクトロン株式会社 | マイクロ波プラズマ源およびプラズマ処理装置 |
| JP5320570B2 (ja) | 2006-11-09 | 2013-10-23 | 国立大学法人東北大学 | 層間絶縁膜、配線構造および電子装置と、それらの製造方法 |
| US8197913B2 (en) | 2007-07-25 | 2012-06-12 | Tokyo Electron Limited | Film forming method for a semiconductor |
| EP2105957A3 (en) | 2008-03-26 | 2011-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate and method for manufacturing semiconductor device |
| JP2010219112A (ja) * | 2009-03-13 | 2010-09-30 | Tokyo Electron Ltd | アモルファスハイドロカーボンナイトライド（ａ−ＣＮ：Ｈｘ）膜の成膜方法、有機ＥＬデバイスおよびその製造方法 |
-
2011
- 2011-03-28 US US13/073,957 patent/US8962454B2/en active Active
- 2011-10-28 JP JP2013537729A patent/JP6025735B2/ja not_active Expired - Fee Related
- 2011-10-28 KR KR1020187012370A patent/KR101959183B1/ko not_active Expired - Fee Related
- 2011-10-28 TW TW100139385A patent/TWI476294B/zh not_active IP Right Cessation
- 2011-10-28 WO PCT/US2011/058283 patent/WO2012061232A2/en not_active Ceased
- 2011-10-28 KR KR1020137014449A patent/KR20130135262A/ko not_active Ceased
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