JP6025735B2 - マイクロ波プラズマを用いる誘電膜堆積方法 - Google Patents
マイクロ波プラズマを用いる誘電膜堆積方法 Download PDFInfo
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- JP6025735B2 JP6025735B2 JP2013537729A JP2013537729A JP6025735B2 JP 6025735 B2 JP6025735 B2 JP 6025735B2 JP 2013537729 A JP2013537729 A JP 2013537729A JP 2013537729 A JP2013537729 A JP 2013537729A JP 6025735 B2 JP6025735 B2 JP 6025735B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Description
408では、前記基板が、前記プラズマに暴露されて、前記基板上にシリコン−ドープ炭素−窒素(Si−ドープCN)膜を堆積する。
Claims (20)
- 低誘電率(low−k)を有する炭素−窒素(CN)膜を含む半導体装置を製造する方法であり、前記方法は:
マイクロ波プラズマ源を含むプロセスチャンバ内に基板を準備し、
前記プロセスチャンバ内に、炭素−窒素分子内結合を持つガスを含む、非−金属−含有プロセスガスを導入し;
前記プロセスガスからプラズマを形成し;及び
前記基板を前記プラズマに暴露して、主成分として炭素及び窒素を持つ炭素−窒素(CN)膜を形成する、ことを含み、
ここで、前記非−金属−含有プロセスガスは、窒素又はアンモニアを含まない、
方法。 - 前記マイクロ波プラズマ源がラジアルラインスロットアンテナを含む、請求項1に記載の方法。
- 前記炭素−窒素分子内結合を持つガスが、トリメチルアミン、ジメチルエチルアミン、ジエチルメチルアミン、トリエチルアミン、ジメチルアミン、ジエチルアミン、メチルアミン、エチルアミン又はそれらの組合せから選択されるアルキルアミンを含む、請求項1に記載の方法。
- 前記炭素−窒素分子内結合を持つガスが、HCN、CH3CN、NCCN又はX−CN(Xは、ハロゲンである)、又はこれらの2以上の組合せを含む、請求項1に記載の方法。
- さらに、前記基板を支持する基板ホルダーに高周波(RF)バイアス電圧を提供することを含む、請求項1に記載の方法。
- 前記プラズマの電子温度が、炭素−窒素分子内結合を持つ前記ガス内のC−H結合の結合エネルギーよりも小さい、請求項1に記載の方法。
- 低誘電率(low−k)を有するシリコンドープ炭素−窒素(Si−ドープCN)膜を含む半導体装置の製造方法であり、前記方法は:
マイクロ波プラズマ源を含むプロセスチャンバ内に基板を準備し;
前記プロセスチャンバ内に、シリコン含有ガス及び炭素−窒素分子内結合を持つガスを含む非−金属−含有プロセスガスを導入し;
前記プロセスガスからプラズマを形成し;及び
前記基板を前記プラズマに暴露して主成分として炭素及び窒素を持ち、0.1から10原子%のSiを持つシリコンドープ炭素−窒素(Si−ドープCN)膜を形成する、ことを含み、
ここで、前記非−金属−含有プロセスガスは、窒素又はアンモニアを含まない、
方法。 - 前記炭素−窒素分子内結合を持つガスが、トリメチルアミン、ジメチルエチルアミン、ジエチルメチルアミン、トリエチルアミン、ジメチルアミン、ジエチルアミン、メチルアミン、エチルアミン又はそれらの組合せからなる群から選択される、請求項7に記載の方法。
- 前記シリコン−含有ガスが、シラン(SiH4)、ジシラン(Si2H6)及びSiaHbXc(ここでXはハロゲンであり、a、b、cは1以上の整数である)化合物からなる群から選択される、請求項7に記載の方法。
- 低誘電率(low−k)を有するシリコンドープ炭素−窒素−酸素(Si−ドープCNO)膜を含む半導体装置の製造方法であり、前記方法は:
マイクロ波プラズマ源を含むプロセスチャンバ内に基板を準備し;
前記プロセスチャンバ内に、酸素−含有ガス、炭素−窒素分子内結合を持つガス、及びシリコン−含有ガスを含む非−金属−含有プロセスガスを導入し;
前記プロセスガスからプラズマを形成し;及び
前記基板を前記プラズマに暴露して主成分として炭素、窒素及び酸素を持ち、0.1から10原子%のSiを持つシリコンドープ炭素−窒素−酸素(Si−ドープCNO)膜を形成する、ことを含み、
ここで、前記非−金属−含有プロセスガスは、窒素又はアンモニアを含まない、
方法。 - 前記炭素−窒素分子内結合を持つガスが、トリメチルアミン、ジメチルエチルアミン、ジエチルメチルアミン、トリエチルアミン、ジメチルアミン、ジエチルアミン、メチルアミン、エチルアミン又はそれらの組合せから選択される、請求項10に記載の方法。
- 前記酸素−含有ガスが、O2、CO、H2O、H2O2、NO、N2O又はNO2又はこれらの2以上の組合せを含む、請求項10に記載の方法。
- 前記シリコン−含有ガスが、シラン(SiH4)、ジシラン(Si2H6)及びSiaHbXc(ここでXはハロゲンであり、a、b、cは1以上の整数である)化合物からなる群から選択される、請求項10に記載の方法。
- 前記炭素−窒素分子内結合が、単結合(C−N)である、請求項1に記載の方法。
- 前記炭素−窒素分子内結合が、二重結合(C=N)である、請求項1に記載の方法。
- 前記炭素−窒素分子内結合が、三重結合(C≡N)である、請求項1に記載の方法。
- 前記炭素−窒素分子内結合が、単結合(C−N)である、請求項7に記載の方法。
- 前記炭素−窒素分子内結合が、二重結合(C=N)又は三重結合(C≡N)である、請求項7に記載の方法。
- 前記炭素−窒素分子内結合が、単結合(C−N)である、請求項10に記載の方法。
- 前記炭素−窒素分子内結合が、二重結合(C=N)又は三重結合(C≡N)である、請求項10に記載の方法。
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US41015510P | 2010-11-04 | 2010-11-04 | |
US61/410,155 | 2010-11-04 | ||
US13/073,957 US8962454B2 (en) | 2010-11-04 | 2011-03-28 | Method of depositing dielectric films using microwave plasma |
US13/073,957 | 2011-03-28 | ||
PCT/US2011/058283 WO2012061232A2 (en) | 2010-11-04 | 2011-10-28 | Method of depositing dielectric films using microwave plasma |
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JP2013546182A JP2013546182A (ja) | 2013-12-26 |
JP2013546182A5 JP2013546182A5 (ja) | 2014-11-27 |
JP6025735B2 true JP6025735B2 (ja) | 2016-11-16 |
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US (1) | US8962454B2 (ja) |
JP (1) | JP6025735B2 (ja) |
KR (2) | KR101959183B1 (ja) |
TW (1) | TWI476294B (ja) |
WO (1) | WO2012061232A2 (ja) |
Cited By (1)
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US10962467B2 (en) | 2005-03-31 | 2021-03-30 | C2 Diagnostics | Optical measurement method for counting and/or differentiating leucocytes |
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JP6104817B2 (ja) * | 2010-12-30 | 2017-03-29 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | マイクロ波プラズマを用いた薄膜堆積 |
JP2013026265A (ja) * | 2011-07-15 | 2013-02-04 | Sony Corp | プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法 |
JP5951443B2 (ja) * | 2011-12-09 | 2016-07-13 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム |
US9177787B2 (en) | 2013-03-15 | 2015-11-03 | Applied Materials, Inc. | NH3 containing plasma nitridation of a layer of a three dimensional structure on a substrate |
KR102458923B1 (ko) | 2016-02-01 | 2022-10-25 | 삼성전자주식회사 | 집적회로 소자 및 그 제조 방법 |
JP6777614B2 (ja) | 2017-09-26 | 2020-10-28 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
US11075113B2 (en) * | 2018-06-29 | 2021-07-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal capping layer and methods thereof |
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JP2003027238A (ja) * | 2001-07-09 | 2003-01-29 | Canon Inc | 堆積膜形成方法 |
US7078336B2 (en) | 2003-11-19 | 2006-07-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current |
US7163877B2 (en) * | 2004-08-18 | 2007-01-16 | Tokyo Electron Limited | Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing |
JP4149427B2 (ja) | 2004-10-07 | 2008-09-10 | 東京エレクトロン株式会社 | マイクロ波プラズマ処理装置 |
JP5121698B2 (ja) | 2006-03-06 | 2013-01-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
WO2008013112A1 (fr) * | 2006-07-28 | 2008-01-31 | Tokyo Electron Limited | Source de plasma à micro-ondes et appareil de traitement plasma |
US7923819B2 (en) | 2006-11-09 | 2011-04-12 | National Iniversity Corporation Tohoku University | Interlayer insulating film, wiring structure and electronic device and methods of manufacturing the same |
US8197913B2 (en) | 2007-07-25 | 2012-06-12 | Tokyo Electron Limited | Film forming method for a semiconductor |
EP2105957A3 (en) | 2008-03-26 | 2011-01-19 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing soi substrate and method for manufacturing semiconductor device |
JP2010219112A (ja) * | 2009-03-13 | 2010-09-30 | Tokyo Electron Ltd | アモルファスハイドロカーボンナイトライド(a−CN:Hx)膜の成膜方法、有機ELデバイスおよびその製造方法 |
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US10962467B2 (en) | 2005-03-31 | 2021-03-30 | C2 Diagnostics | Optical measurement method for counting and/or differentiating leucocytes |
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WO2012061232A3 (en) | 2012-06-28 |
US20120115334A1 (en) | 2012-05-10 |
KR101959183B1 (ko) | 2019-03-15 |
KR20180049229A (ko) | 2018-05-10 |
JP2013546182A (ja) | 2013-12-26 |
TW201229288A (en) | 2012-07-16 |
WO2012061232A2 (en) | 2012-05-10 |
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KR20130135262A (ko) | 2013-12-10 |
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