TWI476294B - 利用微波電漿沉積介電膜之方法 - Google Patents

利用微波電漿沉積介電膜之方法 Download PDF

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Publication number
TWI476294B
TWI476294B TW100139385A TW100139385A TWI476294B TW I476294 B TWI476294 B TW I476294B TW 100139385 A TW100139385 A TW 100139385A TW 100139385 A TW100139385 A TW 100139385A TW I476294 B TWI476294 B TW I476294B
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TW
Taiwan
Prior art keywords
gas
carbon
forming
nitrogen
plasma
Prior art date
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TW100139385A
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English (en)
Chinese (zh)
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TW201229288A (en
Inventor
Hiroyuki Takaba
Original Assignee
Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201229288A publication Critical patent/TW201229288A/zh
Application granted granted Critical
Publication of TWI476294B publication Critical patent/TWI476294B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
TW100139385A 2010-11-04 2011-10-28 利用微波電漿沉積介電膜之方法 TWI476294B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41015510P 2010-11-04 2010-11-04

Publications (2)

Publication Number Publication Date
TW201229288A TW201229288A (en) 2012-07-16
TWI476294B true TWI476294B (zh) 2015-03-11

Family

ID=46020025

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100139385A TWI476294B (zh) 2010-11-04 2011-10-28 利用微波電漿沉積介電膜之方法

Country Status (5)

Country Link
US (1) US8962454B2 (ja)
JP (1) JP6025735B2 (ja)
KR (2) KR20130135262A (ja)
TW (1) TWI476294B (ja)
WO (1) WO2012061232A2 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2883971B1 (fr) 2005-03-31 2007-11-16 C2 Diagnostics Sa Dispositif optique d'analyse sanguine, appareil d'analyse equipe d'un tel dispositif
CN103270578B (zh) * 2010-12-30 2016-10-26 应用材料公司 使用微波等离子体的薄膜沉积
JP2013026265A (ja) * 2011-07-15 2013-02-04 Sony Corp プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法
JP5951443B2 (ja) * 2011-12-09 2016-07-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
US9177787B2 (en) 2013-03-15 2015-11-03 Applied Materials, Inc. NH3 containing plasma nitridation of a layer of a three dimensional structure on a substrate
KR102458923B1 (ko) 2016-02-01 2022-10-25 삼성전자주식회사 집적회로 소자 및 그 제조 방법
JP6777614B2 (ja) 2017-09-26 2020-10-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
US11075113B2 (en) 2018-06-29 2021-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Metal capping layer and methods thereof

Citations (3)

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Publication number Priority date Publication date Assignee Title
US20050106858A1 (en) * 2003-11-19 2005-05-19 Yi-Lung Cheng Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current
US20060040483A1 (en) * 2004-08-18 2006-02-23 Tokyo Electron Limited Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing
US20070283887A1 (en) * 2004-10-07 2007-12-13 Tokyo Electron Limited Microwave Plasma Processing Apparatus

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JP2003027238A (ja) * 2001-07-09 2003-01-29 Canon Inc 堆積膜形成方法
JP5121698B2 (ja) 2006-03-06 2013-01-16 東京エレクトロン株式会社 プラズマ処理装置
CN101385129B (zh) * 2006-07-28 2011-12-28 东京毅力科创株式会社 微波等离子体源和等离子体处理装置
US7923819B2 (en) 2006-11-09 2011-04-12 National Iniversity Corporation Tohoku University Interlayer insulating film, wiring structure and electronic device and methods of manufacturing the same
US8197913B2 (en) 2007-07-25 2012-06-12 Tokyo Electron Limited Film forming method for a semiconductor
EP2105957A3 (en) 2008-03-26 2011-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and method for manufacturing semiconductor device
JP2010219112A (ja) * 2009-03-13 2010-09-30 Tokyo Electron Ltd アモルファスハイドロカーボンナイトライド（ａ−ＣＮ：Ｈｘ）膜の成膜方法、有機ＥＬデバイスおよびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050106858A1 (en) * 2003-11-19 2005-05-19 Yi-Lung Cheng Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current
US20060040483A1 (en) * 2004-08-18 2006-02-23 Tokyo Electron Limited Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing
US20070283887A1 (en) * 2004-10-07 2007-12-13 Tokyo Electron Limited Microwave Plasma Processing Apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.J. Wu, K.H. Chen, C.Y. Wen, L.C. Chen, Y.-C. Yu, C.-W. Wang, E.-K. Lin,"Effect of dilution gas SiCN films growth using methylamine",Materials Chemistry and Physics, 72, 2001, page240-244. *

Also Published As

Publication number Publication date
KR101959183B1 (ko) 2019-03-15
WO2012061232A3 (en) 2012-06-28
TW201229288A (en) 2012-07-16
US20120115334A1 (en) 2012-05-10
JP6025735B2 (ja) 2016-11-16
WO2012061232A2 (en) 2012-05-10
US8962454B2 (en) 2015-02-24
JP2013546182A (ja) 2013-12-26
KR20180049229A (ko) 2018-05-10
KR20130135262A (ko) 2013-12-10

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