Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/68—Organic materials, e.g. photoresists
  • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
  • H10P14/6326—Deposition processes
  • H10P14/6328—Deposition from the gas or vapour phase
  • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
  • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
  • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
  • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
  • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
  • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
  • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
  • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/69—Inorganic materials
  • H10P14/6903—Inorganic materials containing silicon
  • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/69—Inorganic materials
  • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
  • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
  • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Definitions

• the present invention generally relates to depositing dielectric films on a substrate using a microwave plasma source.
• top side Cu capping layers which include: low-k ILD deposition compatibility (thermal stability, plasma damage, etc.), Cu/low-k ILD and top side low-k ILD adhesion, diffusion barrier performance to Cu and O2 H2O diffusion, and compatibility with interconnect processing (wet/dry etch, CMP, etc.).
• Other candidate capping layer materials that require additional research to address these material challenges include, but are not limited to: a-C:H, CNx, and BCNx, which exhibit low-k (k ⁇ 3.9), some compatibility with interconnect processing, and the ability to impede Cu diffusion.
• Embodiments of the invention describe a method for forming dielectric films using a microwave plasma source, for example a microwave plasma source containing a radial line slot antenna (RLSA).
• the dielectric films can include low-k dielectric films containing CN, CNO, Si-doped CN films, and Si-doped CNO films, for example.
• a method for forming a semiconductor device.
• the deposition gas having a carbon- nitrogen intermolecular bond can include an alkylamine gas or a R-CN gas, where R can be H, NC, or a halogen, for example.
• the carbon-nitrogen-containing film can contain a carbon- nitrogen (CN) film.
• the non-metal-containing process gas can further include an oxygen-containing gas and the carbon-nitrogen-containing film can contain a carbon-nitrogen-oxygen (CNO) film.
• the non-metal-containing process gas can further include a silicon-containing gas and the carbon-nitrogen-containing film can contain a silicon-doped carbon-nitrogen (Si-doped CN) film.
• the non-metal-containing process gas can further include a silicon-containing gas and an oxygen-containing gas and the carbon- nitrogen-containing film can contain a silicon-doped carbon-nitrogen-oxygen (Si- doped CNO) film.
• FIG. 1 is a flow diagram for forming a carbon-nitrogen-containing film according to an embodiment of the invention
• FIG. 2 is a flow diagram for forming a carbon-nitrogen (CN) film according to an embodiment of the invention
• FIG. 3 is a flow diagram for forming a carbon-nitrogen-oxygen (CNO) film according to an embodiment of the invention
• FIG. 4 is a flow diagram for forming a silicon-doped carbon-nitrogen (Si- doped CN) film according to an embodiment of the invention
• FIG. 5 is a flow diagram for forming a silicon-doped carbon-nitrogen-oxygen (Si-doped CNO) film according to an embodiment of the invention
• FIG. 6 is a schematic diagram of a plasma processing system containing a radial line slot antenna (RLSA) plasma source for depositing a dielectric film on a substrate according to one embodiment of the invention
• FIG. 7 is a schematic diagram of another plasma processing system containing a radial l ine slot antenna (RLSA) plasma source for depositing a dielectric film on a substrate according to one embodiment of the invention
• FIG. 8 i llustrates a plan view of a gas supplying unit of the plasma processing system in FIG. 7; and [0020] FIG. 9 illustrates a partial cross-sectional view of an antenna portion of the plasma processing system in FIG. 7.
• the low-k dielectric films have a dielectric constant lower than that of S1O2 (k ⁇ 3.9), lower than 3.5, lower than 3, lower than 2.5, or even lower than 2.
• S1O2 k ⁇ 3.9
• 3.5 lower than 3
• 2.5 lower than 2.5
• even lower than 2 k ⁇ 3.9
• the various embodiments may be practiced without one or more of the specific details, or with other replacement and/or additional methods, materials, or components.
• well-known structures, materials, or operations are not shown or described in detail to avoid obscuring aspects of various embodiments of the invention.
• specific numbers, materials, and configurations are set forth in order to provide a thorough understanding of the invention.
• the various embodiments shown in the figures are illustrative representations and are not necessarily drawn to scale.
• Embodiments of the invention provide methods for depositing dielectric films using a microwave plasma that is characterized by low electron temperature and high plasma density and enables deposition of CN, CNO, Si-doped CN, and Si-doped CNO films with materials properties such as low-k that are required for advanced semiconductor devices.
• a microwave plasma source for example the radial line slot antenna ( LSA) plasma processing systems schematically shown in FIGs.
• the electron temperature can be between 3.0 and 3.5 eV, between 3.5eV and 4.0eV, or between 4.0 and 4.5eV.
• the electron temperature can be selected in view of the desired molecular bond in the process gas to be broken, thereby controlling the gas dissociation in the microwave plasma and controlling formation of gas species that react to form a dielectric film on a substrate.
• microwave plasma conditions may be used to control the material properties, including film composition, film density, and dielectric constant (k), of the deposited dielectric films.
• Such targeted bond dissociation is not possible using conventional plasma sources which create high electron temperature distributions (e.g., greater than l OeV) and tend to dissociate gas molecules in the plasma into various molecular fragments with little or no control over the gas species formed, and thus limited control over the material properties of the low-k films.
• high electron temperature distributions e.g., greater than l OeV
• Table I shows bond energies between elements C, N, and H.
• a microwave plasma with an electron temperature below that of a C-H bond (4.30eV) in the process gas may be selected to prevent or reduce breakage of the C-H bond in the plasma and thereby reduce the H-content of the deposited dielectric film.
• a trimethylamine gas ( (CH 3 ) 3 ) may be used in the process gas and selecting an electron temperature below 4.3eV, for example, 4eV or less, is expected to break one or more C-N bonds in the N(CH3) 3 molecule, without breaking C-H bonds in the CH 3 chemical groups. This results in deposition of dielectric films with desired low H-content.
• a R-C ⁇ N molecule may be used in the process gas and a microwave plasma with an electron temperature below that of the C ⁇ N bond (9.27eV) but at or above the R-C bond (e.g., C-C bond energy of 3.61 eV) may be selected to break the R-C bond without breaking the C ⁇ N bond.
• the formed C ⁇ N gas species can then provide the C ⁇ N building block for various dielectric films, for example CN, CNO, Si-doped CN, and Si-doped CNO.
• R represents H, NC, or a halogen, for example.
• FIG. 1 is a flow diagram 100 for forming a carbon-nitrogen-containing film according to an embodiment of the invention.
• the flow diagram 100 includes, in 102, providing a substrate in a process chamber of a plasma processing system containing a microwave plasma source.
• the microwave plasma source can, for example, include a radial line slot antenna (RLSA) schematically shown in FIGs. 6-9.
• the substrate can, for example, be a semiconductor substrate, such as a silicon substrate, a silicon- germanium substrate, a germanium substrate, a glass substrate, a LCD substrate, or a compound semiconductor substrate, such as GaAs.
• the substrate can be of any size, for example, a 200 mm wafer, a 300 mm wafer, or an even larger wafer or substrate.
• a non-metal-containing process gas that includes a deposition gas having a carbon-nitrogen intermolecular bond is introduced into the process chamber.
• the gas pressure in the process chamber can, for example, be maintained between about l OmTorr and about 20Torr, for example between about l OOmTorr and about l OTorr, or between about l OOmTorr and about 5Torr.
• the substrate can be maintained at a substrate temperature between about -50°C and about 800°C, for example about 25°C, about 100°C, about 200°C, about 300°C, or about 400°C.
• the substrate temperature can be between about 400° C and about 700° C. In some examples, substrate temperatures of about 350°C and below may be required when depositing the dielectric film on temperature sensitive substrates. In those cases, the substrate temperature can be between about -50° C and about 350° C, between about -50° C and about 350° C, or between about 100° C and about 350° C.
• the non-metal-containing process gas and the deposited carbon-nitrogen-containing films do not contain a metal element.
• the deposition gas having a carbon-nitrogen intermolecular bond can include an alkylamine gas or a R-CN gas.
• the alkylamine gas can be selected from trimethylamine ((N(CH 3 ) 3 ), dimethylethylamine ( (CH 3 ) 2 (C2H 5 )),
• diethylmethylamine N(C 2 Hs) 2 CH 3
• triethylamine N(C 2 H 5 ) 3
• dimethylamine NH(CH 3 ) 2
• diethylamine NH(C 2 H 5 ) 2
• methylamine NH 2 CH 3
• the R-CN gas may be selected from HCN, CH 3 CN, NCCN, and X-CN where X is a halogen. X can be selected from F, CI, Br, or I.
• the non-metal-containing process gas can further include an oxygen-containing gas.
• the oxygen-containing gas can, for example, be selected from 0 2 , CO, H 2 0, H 2 0 2 , NO, N 2 0, and N0 2 .
• the non- metal-containing process gas can further include a silicon-containing gas.
• the silicon-containing gas can, for example, be selected from silane (S1H4), disilane
• Si a HbX c compounds wherein X denotes a halogen and a, b, c are integers greater than or equal to unity.
• exemplary Si a HbX c compounds include SiH2CI 2 and SiHCl 3 .
• the non-metal-containing process gas can contain Argon (Ar) or Helium (He).
• a plasma is formed in the process chamber from excitation of the process gas by the microwave plasma source.
• the plasma may be characterized by low electron temperature and high plasma density that enables deposition of low-k films.
• High plasma density may include ion density of about or in excess of 1 x l O' Vcm 3 , for example between about 1 x 10"/cm 3 to about 1 x 10 l 3 /cm 3 , or higher.
• the substrate is exposed to the plasma to deposit a carbon-nitrogen- containing film on the substrate.
• the carbon-nitrogen-containing film can include a carbon-nitrogen (CN) film with carbon and nitrogen as the major constituents and the non-metal-containing process gas can include or consist of an alkylamine gas and/or a R-CN gas, or a combination thereof, and optionally Ar or He.
• the carbon-nitrogen-containing film can contain a carbon-nitrogen-oxygen (CNO) film with carbon, nitrogen, and oxygen as the major constituents and the non-metal- containing process gas can include or consist of an oxygen-containing gas, an alkylamine gas and/or a R-CN gas, and optionally Ar or He.
• CNO carbon-nitrogen-oxygen
• the carbon-nitrogen-containing film can contain a silicon-doped carbon-nitrogen (Si-doped CN) film with carbon, nitrogen, and oxygen as the major constituents, 0.1 - l Oatomic percent Si, and the non-metal-containing process gas can include or consist of a silicon-containing gas, an alkylamine gas and/or a R-CN gas, and optionally Ar or He.
• Si-doped CN silicon-doped carbon-nitrogen
• the carbon-nitrogen-containing film can contain a silicon-doped carbon- nitrogen-oxygen (Si-doped CNO) film with carbon, nitrogen, and oxygen as the major constituents and 0.1 - l Oatomic percent Si
• the non-metal-containing process gas can include or consist of a silicon-containing gas, an oxygen-containing gas, an alkylamine gas and/or a R-CN gas, and optionally Ar or He.
• the CN, CNO, Si-doped CN, and Si-doped CNO films may further include small amounts of impurities, for example hydrogen (H) or a halogen. It is contemplated that the Si doping increases the thermal stability of the films.
• a thickness of the CN, CNO, Si-doped CN, and Si-doped CNO films can be between about 10 nanometers (nm) and about 200nm, or between about 20nm and about l OOnm.
• FIG. 2 is a flow diagram 200 for forming a carbon-nitrogen (CN) film according to an embodiment of the invention.
• the flow diagram 200 is similar to the flow diagram 100 in FIG. 1 and includes, in 202, providing a substrate in a process chamber containing a microwave plasma source that includes a radial line slot antenna (RLSA).
• a non-metal-containing process gas that includes an alkylamine gas or a R-CN gas and optionally Ar gas or He gas is introduced into the process chamber.
• a plasma is formed in the process chamber from excitation of the process gas by the microwave plasma source.
• the substrate is exposed to the plasma to deposit a carbon-nitrogen (CN) film on the substrate.
• CN carbon-nitrogen
• the CN film can have a dielectric constant of less than 2, for example about 1 .9.
• FIG. 3 is a flow diagram 300 for forming a carbon-nitrogen-oxygen (CNO) film according to an embodiment of the invention.
• the flow diagram 300 is similar to the flow diagram 100 in FIG. 1 and includes, in 302, providing a substrate in a process chamber containing a microwave plasma source that includes a radial line slot antenna (RLSA).
• RLSA radial line slot antenna
• a non-metal-containing process gas that includes an oxygen- containing gas, an alkylamine gas or a R-CN gas, and optionally Ar gas or He gas is introduced into the process chamber.
• a plasma is formed in the process chamber from excitation of the process gas by the microwave plasma source.
• the substrate is exposed to the plasma to deposit a carbon-nitrogen-oxygen (CNO) film on the substrate.
• CNO carbon-nitrogen-oxygen
• FIG. 4 is a flow diagram 400 for forming a silicon-doped carbon-nitrogen (Si- doped CN) film according to an embodiment of the invention.
• the flow diagram 400 is similar to the flow diagram 100 in FIG. 1 and includes, in 402, providing a substrate in a process chamber containing a microwave plasma source that includes a radial line slot antenna (RLSA).
• RLSA radial line slot antenna
• a non-metal-containing process gas that includes silicon-containing gas, an alkylamine gas or a R-CN gas, and optionally Ar gas or He gas is introduced into the process chamber.
• a plasma is formed in the process chamber from excitation of the process gas by the microwave plasma source.
• the substrate is exposed to the plasma to deposit a silicon-doped carbon-nitrogen (Si-doped CN) film on the substrate.
• FIG. 5 is a flow diagram 500 for forming a silicon-doped carbon-nitrogen- oxygen (Si-doped CNO) film according to an embodiment of the invention.
• the flow diagram 500 is similar to the flow diagram 100 in FIG. 1 and includes, in 502, providing a substrate in a process chamber containing a microwave plasma source that includes a radial line slot antenna (RLSA).
• RLSA radial line slot antenna
• a non-metal-containing process gas that includes silicon-containing gas, an alkylamine gas or a R-CN gas, and optionally Ar gas or He gas is introduced into the process chamber.
• a plasma is formed in the process chamber from excitation of the process gas by the microwave plasma source.
• the substrate is exposed to the plasma to deposit a silicon- doped carbon-nitrogen-oxygen (Si-doped CNO) film on the substrate.
• FIG. 6 is a schematic diagram of a plasma processing system containing a RLSA plasma source for depositing a dielectric film on a substrate according to one embodiment of the invention.
• the plasma produced in the plasma processing system 600 is characterized by low electron temperature and high plasma density that enables deposition of low-k CN, CNO, Si-doped CN, and Si-doped CNO films, for example.
• the plasma processing system 600 can, for example, be a TRIASTM SPA processing system from Tokyo Electron Limited, Akasaka, Japan.
• the plasma processing system 600 contains a process chamber 650 having an opening portion 651 in the upper portion of the process chamber 650 that is larger than a substrate 625.
• a cylindrical dielectric top plate 654 made of quartz or aluminum nitride or aluminum oxide is provided to cover the opening portion 651.
• Gas lines 672 are located in the side wall of the upper portion of process chamber 650 below the top plate 654.
• the number of gas lines 672 can be 16 (only two of which are shown in FIG. 6). Alternatively, a different number of gas lines 672 can be used.
• the gas lines 672 can be circumferentially arranged in the process chamber 650, but this is not required for the invention.
• a non-metal- containing process gas can be evenly and uniformly supplied into a plasma region 659 in process chamber 650 from the gas lines 672. According to embodiments of the invention, the non-metal-containing process gas does not contain a metal element.
• the non-metal-containing process gas includes a deposition gas having a carbon- nitrogen intermolecular bond and can include an alkylamine gas, R-CN gas, or a combination thereof.
• the alkylamine gas can be selected from trimethylamine ((N(CH 3 ) 3 ), dimethylethylamine (N(CH 3 )2(C 2 H 5 )), diethylmethylamine
• the R-CN gas may be selected from HCN, CH 3 CN, NCCN, and X-CN where X is a halogen. X can be selected from F, CI, Br, or I.
• the non- metal-containing process gas can further include an oxygen-containing gas.
• the oxygen-containing gas can, for example, be selected from O2, CO, H2O, H2O2, NO, N2O, and NO2.
• the non-metal-containing process gas can further include a silicon-containing gas.
• the silicon-containing gas can, for example, be selected from silane (S1H4), disilane (Si2H 6 ), and Si a HbX c compounds, wherein X denotes a halogen, and a, b, c, are integers greater than or equal to unity.
• Exemplary SiaHbXc compounds include S1H2CI2 and S1HCI3.
• the non-metal- containing process gas can contain Argon (Ar) or Helium (He).
• microwave power is provided to the process chamber 650 through the top plate 654 via a slot antenna 660 having a plurality of slots 660A.
• the slot antenna 660 faces the substrate 625 to be processed and the slot antenna 660 can be made from a metal plate, for example copper.
• a waveguide 663 is disposed on the top plate 654, where the waveguide 663 is connected to a microwave power supply 661 for generating microwaves with a frequency of about 2.45GHz, for example.
• the waveguide 663 contains a coaxial waveguide 663A with a lower end connected to the slot antenna 660, a coaxial waveguide 663 B connected to the upper surface side of the circular waveguide 663A, and a coaxial waveguide converter 663C connected to the upper surface side of the coaxial waveguide 663B. Furthermore, a rectangular waveguide 663D is connected to the side surface of the coaxial waveguide converter 663C and the microwave power supply 661.
• an axial portion (inner conductor) 662 of an electroconductive material is coaxially provided, so that one end of the axial portion 662 is connected to the central (or nearly central) portion of the upper surface of slot antenna 660, and the other end of the axial portion 662 is connected to the upper surface of the coaxial waveguide 663B, thereby forming a coaxial structure.
• the microwave power can, for example, be between about 0.5 W/cm 2 and about 4 W/cm 2 . Alternatively, the microwave power can be between about 0.5 W/cm 2 and about 3 W/cm 2 .
• the microwave irradiation may contain a microwave frequency of about 300 MHz to about 10 GHz, for example about 2.45 GHz, and the plasma may contain an electron temperature of less than or equal to 5 eV, including 1 , 1 .5, 2, 2.5, 3, 3.5, 4; 4.5 or 5 eV, or any combination thereof.
• the electron temperature can be below 5eV, below 4.5eV, below 4eV, or even below 3.5eV.
• the electron temperature can be between 3.0 and 3.5 eV, between 3.5eV and 4.0eV, or between 4.0 and 4.5 eV.
• the plasma may have a density of about 1 x l O' Vcm 3 to about 1 x 10 l3 /cm 3 , or higher.
• a substrate holder 652 is provided opposite the top plate 654 for supporting and heating a substrate 625 (e.g., a wafer).
• the substrate holder 652 contains a heater 657 to heat the substrate 625, where the heater 657 can be a resistive heater. Alternatively, the heater 657 may be a lamp heater or any other type of heater.
• the process chamber 650 contains an exhaust line 653 connected to the bottom portion of the process chamber 650 and to a vacuum pump 655.
• the plasma processing system 600 further contains a substrate bias system 656 configured to optionally bias the substrate 625 for controlling energy of ions that are drawn to a substrate.
• the substrate bias system 656 includes a substrate power source configured to couple power to the substrate holder 652.
• the substrate power source contains a RF generator and an impedance match network.
• the substrate power source is configured to couple power to the substrate holder 652 by energizing an electrode in the substrate holder 652.
• a typical frequency for the RF bias can range from about 0.1 MHz to about 100 MHz, and can be 13.56 MHz.
• the RF bias can be less than 1 MHz, for example less than 0.8 MHz, less than 0.6 MHz, less than 0.4 MHz, or even less than 0.2MHz.
• the RF bias can be about 0.4 MHz.
• RF power is applied to the electrode at multiple frequencies.
• RF bias systems for plasma processing are well known to those skilled in the art.
• the substrate bias system 656 may include a DC generator.
• no RF bias is applied to the substrate holder and the substrate holder is either electrically grounded or electrically floating.
• the substrate bias system 656 may include a DC generator capable of supplying DC voltage bias between -5kV and +5kV to the substrate holder 552.
• the substrate bias system 656 is further configured to optionally provide pulsing of the RF bias power the pulsing frequency can be greater than I Hz, for example 2Hz, 4Hz, 6Hz, 8Hz, 10Hz, 20Hz, 30Hz, 50Hz, or greater.
• Examplary RF bias power can be between 0W and 100W, between 100W and 200 W, between 200W and 300W, between 300W and 400W, or between 400W and 500W. It is noted that one skilled in the art will appreciate that the power levels of the substrate bias system 656 are related to the size of the substrate being processed. For example, a 300 mm Si wafer requires greater power consumption than a 200 mm wafer during processing.
• a controller 699 includes a microprocessor, a memory, and a digital I/O port capable of generating control voltages sufficient to communicate and activate ' inputs of the plasma processing system 610 as well as monitor outputs from the plasma processing system 600. Moreover, the controller 699 is coupled to and exchanges information with process chamber 650, the vacuum pump 655, the heater 657, and the microwave power supply 661 . A program stored in the memory is utilized to control the aforementioned components of plasma processing system 600 according to a stored process recipe.
• controller 699 is a UNIX-based workstation. Alternatively, the controller 699 can be implemented as a general- purpose computer, digital signal processing system, etc.
• Depositing low-k dielectric films in the plasma processing system 600 can include a substrate temperature between about -25°C and about 800°C, for example about 1 00°C, about 200°C, about 300°C, or about 400°C.
• the substrate temperature can be between about 400° C and about 700° C.
• substrate temperatures of about 350°C and below may be required when depositing the dielectric film on temperature sensitive substrates.
• the substrate temperature can be between about -50° C and about 350° C, between about -50° C and about 350° C, or between about 100° C and about 350° C.
• the pressure in the process chamber 650 can, for example, be maintained between about l OmTorr and about 20Torr, for example between about l OOmTorr and about l OTorr, or between about l OOmTorr and about 5Torr.
• FIG. 7 is a schematic diagram of another plasma processing system containing a radial l ine slot antenna (RLSA) plasma source for depositing a dielectric film on a substrate according to one embodiment of the invention.
• the plasma processing system 10 includes a process chamber 20 (vacuum chamber), an antenna unit 50 (RLSA), and a substrate holder 21.
• the interior of process chamber 20 is roughly sectionalized into a plasma generation region Rl , located below a plasma gas supply unit 30, and a plasma diffusion region R2 at the substrate holder 21 side.
• the plasma generated in the plasma generation region R l can have an electron temperature of several electron volts (eV).
• the substrate holder 21 is located centrally on a bottom portion of the process chamber 20 and serves as a mounting unit for mounting a substrate W.
• a top portion of the process chamber 20 is opened-ended.
• the plasma gas supply unit 30 is placed opposite to the substrate holder 21 and is attached to the top portion of the process chamber 20 via sealing members, not shown in this figure, such as O rings.
• the plasma gas supply unit 30, which may also function as a dielectric window, is made of materials such as, for example, aluminum oxide or quartz and its planar surface, which has a virtual disk shape, faces the substrate holder 2 1 .
• a plurality of gas supply holes 3 1 are provided opposite to the substrate holder 21 on the planar surface of the plasma gas supply unit 30. The plurality of gas supply holes 3 1 communicate with a plasma gas supply port 33 via a gas flow channel 32.
• a plasma gas supply source 34 provides plasma gas such as, for example, Argon (Ar) gas, Helium (He) gas, Krypton (Kr) gas, or other inert gases, into the plasma gas supply port 33.
• the plasma gas is then uniformly supplied into the plasma generation region R 1 via the plurality of gas supply holes 3 1 .
• the plasma processing system 10 further includes a process gas supply unit 40, which is located substantially at the centre of the process chamber 20 between the plasma generation region R l and the plasma diffusion region R2.
• the process gas supply unit 40 is made of conducting materials such as, for example, aluminum alloy including magnesium ( g) or stainless steel. Similar to the plasma gas supply unit 30, a plurality of gas supply holes 41 are provided on a planar surface of the process gas supply unit 40.
• the planar surface of the process gas supply unit 40 is positioned opposite to the substrate holder 21 and has a virtual disk shape.
• the process chamber 20 further includes an exhaust lines 26 connected to the bottom portion of the process chamber 20, a vacuum line 27 connecting the exhaust line to a pressure controller valve 28 and to a vacuum pump 29.
• the pressure controller valve 28 may be used to achieve a desired gas pressure in the process chamber 20.
• a plan view of the process gas supply unit 40 is shown in FIG. 8. As shown in this figure, a grid-like gas flow channel 42, also called a shower plate, is formed within the process gas supply unit 40.
• the grid-like gas flow channel 42 also called a shower plate
• the plurality of gas supply holes 41 communicates with an upper-end of the plurality of gas supply holes 41 , which are formed in the vertical direction.
• the lower end of the plurality of gas supply holes 41 are openings facing the mounting table 21 .
• the plurality of gas supply holes 41 communicate with a process gas supply port 43 via the grid- patterned gas flow channel 42.
• a plurality of openings 44 are formed on to the process gas supply unit 40 such that the plurality of openings 44 pass through the process gas supply unit 40 in vertical direction.
• the plurality of opening 44 passes the plasma gas, e.g., argon (Ar) gas, helium (He) gas, or other inert gases, into the plasma diffusion region R2 at the mounting table 21 side. As shown in FIG. 8, the plurality of opening 44 is formed between the adjacent gas flow channels 42.
• the process gas is supplied, for example, from three separate process gas supply source 45-47 to the process gas supply port 43.
• the process gas supply sources 45-47 correspond respectively to a silicon-containing gas (e.g., S1H4), a deposition gas having a carbon-nitrogen intermolecular bond (e.g., e 3 ), and an oxygen-containing gas (e.g., O2).
• a silicon-containing gas e.g., S1H4
• a deposition gas having a carbon-nitrogen intermolecular bond e.g., e 3
• an oxygen-containing gas e.g., O2
• the plasma gas and the process gas in combination form a non-metal-containing process gas.
• the flow rate of the non-metal-containing process gas the flow rate of deposition gas and the silicon-containing gas may be set to a range within l Osccm to 200sccm.
• the flow rate of plasma gas ranges from l OOsccm to 2000sccm.
• the flow rate of oxygen-containing gas, e.g. O2 is set within a range of l Osccm t0 l OOsccm.
• the one or more of the deposition gas, the silicon-containing, and the oxygen- containing gas flow through the grid-like gas flow channel 42 and are uniformly suppl ied into the plasma diffusion region R2 via the plurality of gas supply holes 41 .
• the plasma processing system 10 further includes four valves (V 1 -V4) and four flow rate controller (MFC 1 - FC4) for respectively controlling a supply of the plasma gas, the deposition gas, the silicon-containing gas, and the oxygen-containing gas.
• An external microwave generator 55 provides a microwave of a predetermined frequency, e.g., 2.45 GHz, to the antenna unit 50 via a coaxial waveguide 54.
• the coaxial waveguide 54 may include an inner conductor 54B and an outer conductor 54A .
• the microwave from the microwave generator 55 generates an electric field just below the plasma gas supply unit 30, in the plasma generation region R l , which in turn causes excitation of the plasma gas, e.g., Argon (Ar) gas, Helium (He) gas, or other inert gases, within the process chamber 20.
• Argon (Ar) gas e.g., Argon (Ar) gas, Helium (He) gas, or other inert gases
• FIG. 9 illustrates a partial cross-sectional view of the antenna unit 50 (RLSA).
• the antenna unit 50 may include a flat antenna main body 51 , a radial line slot plate 52, and a dielectric plate 53 to shorten the wavelength of the microwave.
• the flat antenna main body 51 has a circular shape with an open-ended bottom surface.
• the radial line slot plate 52 is formed to close the open-ended bottom surface of the flat antenna main body 51 .
• the flat antenna main body 51 and the radial line slot plate 52 are made of a conductive material with a flat hollowed circular shape waveguide.
• a plurality of slots 56 are provided on the radial line slot plate 52 to generate a circular polarized wave.
• the plurality of slots 56 are arranged in a substantially T- shaped form having a slight gap there between, in a concentric circle pattern or a spiral pattern along a circumferential direction. Since the slots 56a and 56b are perpendicular to each other, a circular polarized wave containing two orthogonal polarized components is radiated, as a plane wave, from the radial line slot plate 52.
• the dielectric plate 53 is made of a low loss dielectric material, e.g., aluminum oxide (AI2O3) or silicon nitride (S13N4), which is located between the radial line slot plate 52 and the flat antenna main body 51 .
• the radial line slot plate 52 is mounted on the process chamber 20 using sealing members, not shown in FIG. 6, such that the radial line slot plate 52 is in close contact with a cover plate 23.
• the cover plate 23 is located on the upper surface of plasma gas supply unit 30 and is formed from a microwave transmissive dielectric material such as aluminum oxide (AI2O3).
• an external high-frequency power supply source 22 is electrically connected to the substrate holder 21 via a matching network 25.
• the external high-frequency power supply source 22 generates an RF bias power of a predetermined frequency, e.g. 13.56 MHz, for controlling ions energy that are drawn to the substrate W.
• the power supply source 22 is further configured to optionally provide pulsing of the RF bias power the pulsing frequency can be greater than l Hz, for example 2Hz, 4Hz, 6Hz, 8Hz, 10Hz, 20Hz, 30Hz, 50Hz, or greater.
• Examplary RF bias power can be between 0W and 100W, between 100W and 200W, between 200W and 300W, between 300W and 400W, or between 400W and 500W.
• the plasma processing system 10 further includes a DC voltage generator 35 capable of optionally supplying DC voltage bias between -5kV and +5kV to the substrate holder 21 .
• the plasma gas e.g., Ar gas
• the deposition gas, the silicon-containing gas, and the oxygen-containing gas and Ar as a carrier gas may be introduced into the process chamber 20 using the process gas supply unit 40.
• the deposition gas, the silicon-containing gas, and the oxygen-containing gas may also be introduced into the process chamber 20 using the plasma gas supply unit 30.

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• Chemical Vapour Deposition (AREA)
• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Plasma & Fusion (AREA)
• Formation Of Insulating Films (AREA)

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• 2011
  • 2011-03-28 US US13/073,957 patent/US8962454B2/en active Active
  • 2011-10-28 TW TW100139385A patent/TWI476294B/zh not_active IP Right Cessation
  • 2011-10-28 WO PCT/US2011/058283 patent/WO2012061232A2/en not_active Ceased
  • 2011-10-28 KR KR1020187012370A patent/KR101959183B1/ko not_active Expired - Fee Related
  • 2011-10-28 JP JP2013537729A patent/JP6025735B2/ja not_active Expired - Fee Related
  • 2011-10-28 KR KR1020137014449A patent/KR20130135262A/ko not_active Ceased

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