TWI476294B - 利用微波電漿沉積介電膜之方法 - Google Patents

利用微波電漿沉積介電膜之方法 Download PDF

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Publication number
TWI476294B
TWI476294B TW100139385A TW100139385A TWI476294B TW I476294 B TWI476294 B TW I476294B TW 100139385 A TW100139385 A TW 100139385A TW 100139385 A TW100139385 A TW 100139385A TW I476294 B TWI476294 B TW I476294B
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TW
Taiwan
Prior art keywords
gas
carbon
forming
nitrogen
plasma
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TW100139385A
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English (en)
Chinese (zh)
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TW201229288A (en
Inventor
高場裕之
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東京威力科創股份有限公司
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Publication of TW201229288A publication Critical patent/TW201229288A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
TW100139385A 2010-11-04 2011-10-28 利用微波電漿沉積介電膜之方法 TWI476294B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US41015510P 2010-11-04 2010-11-04

Publications (2)

Publication Number Publication Date
TW201229288A TW201229288A (en) 2012-07-16
TWI476294B true TWI476294B (zh) 2015-03-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW100139385A TWI476294B (zh) 2010-11-04 2011-10-28 利用微波電漿沉積介電膜之方法

Country Status (5)

Country Link
US (1) US8962454B2 (enExample)
JP (1) JP6025735B2 (enExample)
KR (2) KR101959183B1 (enExample)
TW (1) TWI476294B (enExample)
WO (1) WO2012061232A2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2883971B1 (fr) 2005-03-31 2007-11-16 C2 Diagnostics Sa Dispositif optique d'analyse sanguine, appareil d'analyse equipe d'un tel dispositif
CN103270578B (zh) * 2010-12-30 2016-10-26 应用材料公司 使用微波等离子体的薄膜沉积
JP2013026265A (ja) * 2011-07-15 2013-02-04 Sony Corp プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法
JP5951443B2 (ja) * 2011-12-09 2016-07-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
US9177787B2 (en) * 2013-03-15 2015-11-03 Applied Materials, Inc. NH3 containing plasma nitridation of a layer of a three dimensional structure on a substrate
KR102458923B1 (ko) 2016-02-01 2022-10-25 삼성전자주식회사 집적회로 소자 및 그 제조 방법
JP6777614B2 (ja) 2017-09-26 2020-10-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
US11075113B2 (en) 2018-06-29 2021-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Metal capping layer and methods thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050106858A1 (en) * 2003-11-19 2005-05-19 Yi-Lung Cheng Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current
US20060040483A1 (en) * 2004-08-18 2006-02-23 Tokyo Electron Limited Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing
US20070283887A1 (en) * 2004-10-07 2007-12-13 Tokyo Electron Limited Microwave Plasma Processing Apparatus

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JP2003027238A (ja) * 2001-07-09 2003-01-29 Canon Inc 堆積膜形成方法
CN101322225B (zh) 2006-03-06 2012-06-27 东京毅力科创株式会社 等离子体处理装置
CN101385129B (zh) * 2006-07-28 2011-12-28 东京毅力科创株式会社 微波等离子体源和等离子体处理装置
US7923819B2 (en) 2006-11-09 2011-04-12 National Iniversity Corporation Tohoku University Interlayer insulating film, wiring structure and electronic device and methods of manufacturing the same
US8197913B2 (en) 2007-07-25 2012-06-12 Tokyo Electron Limited Film forming method for a semiconductor
EP2105957A3 (en) 2008-03-26 2011-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and method for manufacturing semiconductor device
JP2010219112A (ja) * 2009-03-13 2010-09-30 Tokyo Electron Ltd アモルファスハイドロカーボンナイトライド（ａ−ＣＮ：Ｈｘ）膜の成膜方法、有機ＥＬデバイスおよびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050106858A1 (en) * 2003-11-19 2005-05-19 Yi-Lung Cheng Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current
US20060040483A1 (en) * 2004-08-18 2006-02-23 Tokyo Electron Limited Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing
US20070283887A1 (en) * 2004-10-07 2007-12-13 Tokyo Electron Limited Microwave Plasma Processing Apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J.J. Wu, K.H. Chen, C.Y. Wen, L.C. Chen, Y.-C. Yu, C.-W. Wang, E.-K. Lin,"Effect of dilution gas SiCN films growth using methylamine",Materials Chemistry and Physics, 72, 2001, page240-244. *

Also Published As

Publication number Publication date
KR20130135262A (ko) 2013-12-10
WO2012061232A3 (en) 2012-06-28
JP6025735B2 (ja) 2016-11-16
US8962454B2 (en) 2015-02-24
KR20180049229A (ko) 2018-05-10
KR101959183B1 (ko) 2019-03-15
JP2013546182A (ja) 2013-12-26
WO2012061232A2 (en) 2012-05-10
US20120115334A1 (en) 2012-05-10
TW201229288A (en) 2012-07-16

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