JP6025735B2 - マイクロ波プラズマを用いる誘電膜堆積方法 - Google Patents

マイクロ波プラズマを用いる誘電膜堆積方法 Download PDF

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JP6025735B2
JP6025735B2 JP2013537729A JP2013537729A JP6025735B2 JP 6025735 B2 JP6025735 B2 JP 6025735B2 JP 2013537729 A JP2013537729 A JP 2013537729A JP 2013537729 A JP2013537729 A JP 2013537729A JP 6025735 B2 JP6025735 B2 JP 6025735B2
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gas
nitrogen
carbon
plasma
bond
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JP2013546182A5 (enExample
JP2013546182A (ja
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裕之 高場
裕之 高場
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/6903—Inorganic materials containing silicon
    • H10P14/6905—Inorganic materials containing silicon being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC

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  • Chemical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
JP2013537729A 2010-11-04 2011-10-28 マイクロ波プラズマを用いる誘電膜堆積方法 Expired - Fee Related JP6025735B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US41015510P 2010-11-04 2010-11-04
US61/410,155 2010-11-04
US13/073,957 US8962454B2 (en) 2010-11-04 2011-03-28 Method of depositing dielectric films using microwave plasma
US13/073,957 2011-03-28
PCT/US2011/058283 WO2012061232A2 (en) 2010-11-04 2011-10-28 Method of depositing dielectric films using microwave plasma

Publications (3)

Publication Number Publication Date
JP2013546182A JP2013546182A (ja) 2013-12-26
JP2013546182A5 JP2013546182A5 (enExample) 2014-11-27
JP6025735B2 true JP6025735B2 (ja) 2016-11-16

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JP2013537729A Expired - Fee Related JP6025735B2 (ja) 2010-11-04 2011-10-28 マイクロ波プラズマを用いる誘電膜堆積方法

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Country Link
US (1) US8962454B2 (enExample)
JP (1) JP6025735B2 (enExample)
KR (2) KR101959183B1 (enExample)
TW (1) TWI476294B (enExample)
WO (1) WO2012061232A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10962467B2 (en) 2005-03-31 2021-03-30 C2 Diagnostics Optical measurement method for counting and/or differentiating leucocytes

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103270578B (zh) * 2010-12-30 2016-10-26 应用材料公司 使用微波等离子体的薄膜沉积
JP2013026265A (ja) * 2011-07-15 2013-02-04 Sony Corp プラズマ処理方法、プラズマ処理装置、及び、半導体装置の製造方法
JP5951443B2 (ja) * 2011-12-09 2016-07-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
US9177787B2 (en) * 2013-03-15 2015-11-03 Applied Materials, Inc. NH3 containing plasma nitridation of a layer of a three dimensional structure on a substrate
KR102458923B1 (ko) 2016-02-01 2022-10-25 삼성전자주식회사 집적회로 소자 및 그 제조 방법
JP6777614B2 (ja) 2017-09-26 2020-10-28 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
US11075113B2 (en) 2018-06-29 2021-07-27 Taiwan Semiconductor Manufacturing Co., Ltd. Metal capping layer and methods thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003027238A (ja) * 2001-07-09 2003-01-29 Canon Inc 堆積膜形成方法
US7078336B2 (en) 2003-11-19 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for fabricating a copper barrier layer with low dielectric constant and leakage current
US7163877B2 (en) * 2004-08-18 2007-01-16 Tokyo Electron Limited Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing
JP4149427B2 (ja) 2004-10-07 2008-09-10 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
CN101322225B (zh) 2006-03-06 2012-06-27 东京毅力科创株式会社 等离子体处理装置
CN101385129B (zh) * 2006-07-28 2011-12-28 东京毅力科创株式会社 微波等离子体源和等离子体处理装置
US7923819B2 (en) 2006-11-09 2011-04-12 National Iniversity Corporation Tohoku University Interlayer insulating film, wiring structure and electronic device and methods of manufacturing the same
US8197913B2 (en) 2007-07-25 2012-06-12 Tokyo Electron Limited Film forming method for a semiconductor
EP2105957A3 (en) 2008-03-26 2011-01-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing soi substrate and method for manufacturing semiconductor device
JP2010219112A (ja) * 2009-03-13 2010-09-30 Tokyo Electron Ltd アモルファスハイドロカーボンナイトライド（ａ−ＣＮ：Ｈｘ）膜の成膜方法、有機ＥＬデバイスおよびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10962467B2 (en) 2005-03-31 2021-03-30 C2 Diagnostics Optical measurement method for counting and/or differentiating leucocytes

Also Published As

Publication number Publication date
KR20130135262A (ko) 2013-12-10
WO2012061232A3 (en) 2012-06-28
TWI476294B (zh) 2015-03-11
US8962454B2 (en) 2015-02-24
KR20180049229A (ko) 2018-05-10
KR101959183B1 (ko) 2019-03-15
JP2013546182A (ja) 2013-12-26
WO2012061232A2 (en) 2012-05-10
US20120115334A1 (en) 2012-05-10
TW201229288A (en) 2012-07-16

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