JP5204229B2 - 半導体等の成膜方法 - Google Patents
半導体等の成膜方法 Download PDFInfo
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- JP5204229B2 JP5204229B2 JP2010518232A JP2010518232A JP5204229B2 JP 5204229 B2 JP5204229 B2 JP 5204229B2 JP 2010518232 A JP2010518232 A JP 2010518232A JP 2010518232 A JP2010518232 A JP 2010518232A JP 5204229 B2 JP5204229 B2 JP 5204229B2
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- 238000000034 method Methods 0.000 title claims description 40
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 239000007789 gas Substances 0.000 claims description 71
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 229910018540 Si C Inorganic materials 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 8
- 239000011737 fluorine Substances 0.000 claims description 8
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 7
- 229910007991 Si-N Inorganic materials 0.000 claims description 6
- 229910006294 Si—N Inorganic materials 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 33
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 5
- 238000010494 dissociation reaction Methods 0.000 description 4
- 230000005593 dissociations Effects 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000005108 dry cleaning Methods 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- QKDIBALFMZCURP-UHFFFAOYSA-N 1-methyl-1$l^{3}-silinane Chemical compound C[Si]1CCCCC1 QKDIBALFMZCURP-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/36—Carbonitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
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Description
Claims (5)
- フッ素を含有する絶縁膜を有する半導体装置の製造方法であって、
前記絶縁膜の上にSiCN膜を形成し、
前記SiCN膜中の窒素含有量を、前記SiCN膜と前記絶縁膜との界面から遠ざかる方向に従って、低下させ、
前記SiCN膜において前記絶縁膜と前記SiCN膜との界面近傍の領域である第1領域におけるSi−N結合の割合を、前記SiCN膜における前記第1領域以外の領域である第2領域のSi−N結合の割合よりも高くし、前記第2領域のSi−C結合の割合を、前記第1領域のSi−C結合の割合よりも高くする、
半導体装置の製造方法。 - 前記SiCN膜を、複数の領域に分けられた容器内の前記複数の領域へのガスの流量比を調節することにより成膜する、請求項1記載の半導体装置の製造方法。
- 前記ガスの流量比を経時的に調節する、請求項2記載の半導体装置の製造方法。
- フッ素を含有する絶縁膜を有する半導体装置の製造方法であって、
窒素ガスと、シリコン及び炭素を含むガスと、をマイクロ波により励起して、前記絶縁膜の上にSiCN膜を形成し、
前記窒素ガスの流量を変化させて、前記SiCN膜中の窒素含有量を、前記SiCN膜と前記絶縁膜との界面から遠ざかる方向に従って、低下させ、
前記SiCN膜において前記絶縁膜と前記SiCN膜との界面近傍の領域である第1領域におけるSi−N結合の割合を、前記SiCN膜における前記第1領域以外の領域である第2領域のSi−N結合の割合よりも高くし、前記第2領域のSi−C結合の割合を、前記第1領域のSi−C結合の割合よりも高くする、
半導体装置の製造方法。 - フッ素を含有する絶縁膜を有する半導体装置であって、
前記絶縁膜の上に直接形成されたSiCN膜を有し、
前記SiCN膜において、前記絶縁膜との界面から遠ざかる方向に、窒素含有量が低下し、
前記SiCN膜において前記絶縁膜と前記SiCN膜との界面近傍の領域である第1領域におけるSi−N結合の割合は、前記SiCN膜における前記第1領域以外の領域である第2領域のSi−N結合の割合よりも高く、前記第2領域のSi−C結合の割合は前記第1領域のSi−C結合の割合よりも高い、
半導体装置。
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US12/008,770 US8197913B2 (en) | 2007-07-25 | 2008-01-14 | Film forming method for a semiconductor |
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Publication number | Priority date | Publication date | Assignee | Title |
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TW477009B (en) * | 1999-05-26 | 2002-02-21 | Tadahiro Ohmi | Plasma process device |
US8962454B2 (en) | 2010-11-04 | 2015-02-24 | Tokyo Electron Limited | Method of depositing dielectric films using microwave plasma |
US9543123B2 (en) * | 2011-03-31 | 2017-01-10 | Tokyo Electronics Limited | Plasma processing apparatus and plasma generation antenna |
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US9431235B1 (en) | 2015-04-24 | 2016-08-30 | International Business Machines Corporation | Multilayer dielectric structures with graded composition for nano-scale semiconductor devices |
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Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000074127A (ja) | 1998-08-26 | 2000-03-07 | Bridgestone Corp | 防振装置 |
DE60037395T2 (de) * | 1999-03-09 | 2008-11-27 | Tokyo Electron Ltd. | Herstellung eines halbleiter-bauelementes |
JP4260764B2 (ja) * | 1999-03-09 | 2009-04-30 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
TW477009B (en) | 1999-05-26 | 2002-02-21 | Tadahiro Ohmi | Plasma process device |
JP2001284340A (ja) * | 2000-03-30 | 2001-10-12 | Hitachi Kokusai Electric Inc | 半導体製造装置および半導体装置の製造方法 |
US6458718B1 (en) * | 2000-04-28 | 2002-10-01 | Asm Japan K.K. | Fluorine-containing materials and processes |
US6657284B1 (en) * | 2000-12-01 | 2003-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Graded dielectric layer and method for fabrication thereof |
JP4727057B2 (ja) * | 2001-03-28 | 2011-07-20 | 忠弘 大見 | プラズマ処理装置 |
JP4257051B2 (ja) * | 2001-08-10 | 2009-04-22 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
DE10238024B4 (de) * | 2002-08-20 | 2007-03-08 | Infineon Technologies Ag | Verfahren zur Integration von Luft als Dielektrikum in Halbleitervorrichtungen |
JP4454242B2 (ja) * | 2003-03-25 | 2010-04-21 | 株式会社ルネサステクノロジ | 半導体装置およびその製造方法 |
WO2004087989A1 (ja) * | 2003-03-28 | 2004-10-14 | Toyo Seikan Kaisha, Ltd. | プラズマcvd法による化学蒸着膜及びその形成方法 |
US7144803B2 (en) * | 2003-04-17 | 2006-12-05 | Semiconductor Research Corporation | Methods of forming boron carbo-nitride layers for integrated circuit devices |
JP3940095B2 (ja) * | 2003-05-08 | 2007-07-04 | 忠弘 大見 | 基板処理装置 |
JP4413556B2 (ja) * | 2003-08-15 | 2010-02-10 | 東京エレクトロン株式会社 | 成膜方法、半導体装置の製造方法 |
JP2005093737A (ja) | 2003-09-17 | 2005-04-07 | Tadahiro Omi | プラズマ成膜装置,プラズマ成膜方法,半導体装置の製造方法,液晶表示装置の製造方法及び有機el素子の製造方法 |
JP4393844B2 (ja) | 2003-11-19 | 2010-01-06 | 東京エレクトロン株式会社 | プラズマ成膜装置及びプラズマ成膜方法 |
CN100433294C (zh) * | 2004-01-13 | 2008-11-12 | 东京毅力科创株式会社 | 半导体装置的制造方法以及成膜系统 |
JP4715207B2 (ja) * | 2004-01-13 | 2011-07-06 | 東京エレクトロン株式会社 | 半導体装置の製造方法及び成膜システム |
JP2005213633A (ja) * | 2004-02-02 | 2005-08-11 | L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude | 化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法 |
US7033940B1 (en) * | 2004-03-30 | 2006-04-25 | Advanced Micro Devices, Inc. | Method of forming composite barrier layers with controlled copper interface surface roughness |
US20050250346A1 (en) * | 2004-05-06 | 2005-11-10 | Applied Materials, Inc. | Process and apparatus for post deposition treatment of low k dielectric materials |
JP4555143B2 (ja) * | 2004-05-11 | 2010-09-29 | 東京エレクトロン株式会社 | 基板の処理方法 |
US7776736B2 (en) * | 2004-05-11 | 2010-08-17 | Tokyo Electron Limited | Substrate for electronic device capable of suppressing fluorine atoms exposed at the surface of insulating film from reacting with water and method for processing same |
US7456093B2 (en) * | 2004-07-03 | 2008-11-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for improving a semiconductor device delamination resistance |
JP2006073569A (ja) * | 2004-08-31 | 2006-03-16 | Matsushita Electric Ind Co Ltd | 半導体装置とその製造方法 |
JP4664119B2 (ja) | 2005-05-17 | 2011-04-06 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR101272097B1 (ko) * | 2005-06-03 | 2013-06-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 집적회로 장치 및 그의 제조방법 |
WO2006137384A1 (ja) * | 2005-06-20 | 2006-12-28 | Tohoku University | 層間絶縁膜および配線構造と、それらの製造方法 |
US7915166B1 (en) * | 2007-02-22 | 2011-03-29 | Novellus Systems, Inc. | Diffusion barrier and etch stop films |
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