TWI381445B - 用來形成膜之電漿處理方法及以此方法製成之電子元件 - Google Patents

用來形成膜之電漿處理方法及以此方法製成之電子元件 Download PDF

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TWI381445B
TWI381445B TW097128111A TW97128111A TWI381445B TW I381445 B TWI381445 B TW I381445B TW 097128111 A TW097128111 A TW 097128111A TW 97128111 A TW97128111 A TW 97128111A TW I381445 B TWI381445 B TW I381445B
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film
plasma
gas
insulating film
decane
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TW200926290A (en
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Kotaro Miyatani
Kohei Kawamura
Toshihisa Nozawa
Takaaki Matsuoka
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Tokyo Electron Ltd
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Description

用來形成膜之電漿處理方法及以此方法製成之電子元件 【交叉參考之相關申請案】
本申請案主張下列兩者之優先權，於此將其納入並參考其整體內容：美國專利臨時申請案第60/961,877號，於2007年7月24日提出申請，發明名稱為「半導體裝置之製造方法」(“Manufacturing method for semiconductor device”)；及美國專利申請案第12/005,683號，於2007年12月28日提出申請，發明名稱為「用來形成膜之電漿處理方法及以此方法製成之電子元件」(“A plasma processing method for forming a film and an electronic component manufactured by the method”)。
本發明係有關於利用電漿在電子元件中之基板上形成膜之方法，該電子元件可應用於半導體裝置、液晶顯示器、有機電致發光元件，本發明亦有關於利用該方法製造之電子元件。
電子裝置的製造中，如半導體裝置、液晶顯示器裝置、有機電致發光元件，吾人執行一膜形成處理，以於基板表面上形成導性膜或絕緣膜。利用電漿而用以於基板上形成膜之電漿膜形成處理係被採用於此膜形成處理中。在一於基板上形成CF膜，且於膜形成處理中更於CF膜上形成絕緣膜的情況下，吾人已面臨一問題，即CF膜中的氟原子在絕緣膜中擴散，藉此CF膜與絕緣膜的接觸性因而減低。除此之外亦有一問題，即當CF膜與絕緣膜在接續膜形成處理時接受熱處理，絕緣膜可能因氟原子在絕緣膜中擴散而受侵蝕而剝離。
附帶一提，上述電漿膜形成處理通常透過電漿膜形成裝置執行。近年來，微波電漿膜形成裝置藉由微波場之所產生電漿而形成膜，其作為電漿膜形成裝置的一種，已備受矚目。據此微波電漿膜形成裝置，能獲得相較於傳統膜形成裝置之高密度電漿，藉此基板的膜形成處理能在短時間內有效執行。
以上描述之微波電漿膜形成裝置係提供有如一置放用基座，用以將基板置放於處理容器之內部。而在處理容器的上部部分，提供有徑向線槽形天線，以及用以將微波從徑向線槽形天線傳送穿過並用以供給電漿之噴淋板。再者，微波電漿膜形成裝置係用以從處理容器之牆表面供給一膜用之材料氣體。
針對利用微波電漿膜形成裝置來形成膜之電漿處理方法，吾人已知有下述範例。舉例而言，日本公開專利公報第2005-093737號揭露一用以於基板上形成膜之電漿處理方法，該方法能夠在短時間內、低溫下形成一高品質膜，其係藉由將供給至基板的自於由基與離子數量最佳化。此外，日本公開專利公報第2006-324023號揭露一能夠使噴淋板變形或扭曲最小化之電漿膜形成裝置，其係藉由將噴淋板溫度維持於一期望溫度，並改善噴淋板平面內溫度的均勻性。
此外，日本公開專利公報第2005-150612號揭露一電漿膜形成裝置，該裝置避免電漿激發用之氣體在倍供應至處理容器前就已電漿化，並在一高頻微波供給處的區域內適當地產生電漿。再者，國際公開之未審查專利申請案第2000-74127號揭露一電漿處理裝置，該裝置能夠在不受限於處理中所用之氣體種類的情況下維持電漿的穩定性，係因處理氣體解離或結合之故，微波導入部份之介電噴淋板表面上不會有膜的依附。
然而，要防止基板上所形成CF膜中之氟原子在絕緣膜中擴散係屬困難，並且，藉由利用上述文件描述方法來防止CF膜與絕緣膜之接觸性不惡化亦屬困難。
本發明之一實施態樣可為一半導體裝置製造方法，包括以下步驟：形成一氟化絕緣膜；沉積一第一Six Cy Nz 膜於該氟化絕緣膜上，係藉由反應一單甲基矽烷；及沉積一第二Six Cy Nz 膜於該第一Six Cy Nz 膜上，係藉由反應一三甲基矽烷。
該氟化絕緣膜之表面可以一CO電漿處理。其方法包括以下步驟：藉由以微波電漿處理設備處理該單甲基矽烷，沉積該第一Six Cy Nz 膜。該方法可包括下列步驟：藉由以微波電漿處理設備處理該三甲基矽烷，沉積該第二Six Cy Nz 膜。該第一Six Cy Nz 膜滿足一方程式「y<z」。該第二Six Cy Nz 膜滿足一方程式「y>z」。該氟化絕緣膜係以一選自於由一C4 F6 氣體、一C5 F8 氣體及一C3 F4 氣體所組成之群組中之一材料氣體製成。
本發明之另一實施態樣為一半導體裝置，包括：一氟化絕緣膜；一第一Six Cy Nz 膜，係藉由反應一單甲基矽烷而沉積於該氟化絕緣膜上；及一第二Six Cy Nz 膜，係藉由反應一三甲基矽烷而沉積於該第一Six Cy Nz 膜上。
該氟化絕緣膜之表面可以一CO電漿處理。該單甲基矽烷可以一微波電漿處理設備處理。該三甲基矽烷可以一微波電漿處理設備處理。該第一Six Cy Nz 膜滿足一方程式「y<z」。該第二Six Cy Nz 膜滿足一方程式「y>z」。該氟化絕緣膜係以一選自於由一C4 F6 氣體、一C5 F8 氣體及一C3 F4 氣體所組成之群組中之一材料氣體製成。
在CF膜上形成絕緣膜之前以電漿處理CF膜的情況下，因為CF膜表面存在之氟能夠被減少、移除，絕緣膜中氟的擴散作用可降低。再者，以電漿處理CF膜防止絕緣膜在受熱處理時的侵蝕。依此方式，CF膜與絕緣膜的接觸性能夠提升。
在CF膜上形成具有氮成分高於甲基成分的SiCN膜的情況下，因為SiCN膜對氟的阻障特徵增加，氟原子從CF膜到SiCN膜的擴散作用可能減少。因此，CF膜與SiCN膜的接觸性能夠增加。
在CF膜上形成具有甲基成分高於氮成分的SiCN膜的情況下，因為SiCN膜具有低氫成分，氫電漿對CF膜與SiCN膜的損害可能減少。依此方式，CF膜與SiCN膜的接觸性能夠增加。
本發明一實施態樣係一以受電漿處理之氣體於基板上形成膜之電漿處理方法，該用以形成膜之電漿處理方法包括以下步驟：藉由使用Ca Fb 氣體(於此a與b係正整數，同時滿足方程式「b=2a-2」)在基板上形成一CF膜；以受電漿處理之氣體處理CF膜；及於CF膜上形成一絕緣膜，其處理係藉由利用受電漿處理之絕緣材料。
首先，在用以形成膜之電漿處理方法中，一CF膜形成在基板上。圖1繪示一電子元件61，其在基板62上形成CF膜63。基板上之CF膜表面具有一結構，如圖1下半部所示。根據本發明之Ca Fb 氣體而言，a與b係正整數，同時滿足方程式「b=2a-2」。尤C4 F6 氣體、C5 F8 氣體、C3 F4 氣體、C6 F10 氣體、C7 F12 氣體或C2 F2 氣體可用作Ca Fb 氣體。再者，根據本發明，複數個CF膜可形成於基板上。
於基板上形成CF膜之後，吾人以受電漿處理之氣體處理所形成之CF膜。圖2繪示形成於基板62上之CF膜63的表面以受電漿處理之氣體64處理。就受電漿處理之氣體(以下亦稱作電漿)而言，吾人可利用CO基底的電漿。舉例而言，CO電漿(一氧化碳電漿)、HCO電漿及CH3 CO電漿可作為CO基底的電漿。在以CO電漿處理CF膜63的情況下，CO電漿與存在CF膜63表面之一氟原子反應後產生COF電漿，如圖2下半部所示。亦即，CF膜表面之氟端基被移除。
圖3繪示從CF膜65表面移除氟端基之後的電子元件61。CF膜與自CO得到之一碳原子反應，該模在移除氟之後與一碳原子終止了碳原子鍵，並形成一碳-碳耦合之交聯結構。其結果係以CO電漿處理後之CF膜，如圖3下半部所示之化學結構。
接著，在受電漿處理之CF膜上形成一絕緣膜，該絕緣膜可作為硬罩或阻障層。藉由使用一電漿處理之材料氣體，絕緣膜形成於CF膜上。圖4繪示一電子元件61，其中藉由使用電漿處理之材料氣體，絕緣膜66形成於CF膜65上。在此，舉例而言，SiC膜、SiCN膜、SiCO膜可作為絕緣膜。複數個絕緣膜可形成於CF膜上。
再者，舉例而言，甲烷、矽烷、單甲基矽烷(mono-methylsilane,1MS)、二甲基矽烷(di-methylsilane,2MS)、三甲基矽烷(tri-methylsilane,3MS)、四甲基矽烷(tetra-methylsilane,4MS)、矽氮烷(silazane)可作為材料氣體。舉例而言，甲基矽氮烷(methylsilazane)及乙基矽氮烷(ethylsilazane)可作為矽氮烷。這些材料氣體可混合來形成絕緣膜。必要之下，額外氣體可用來形成絕緣膜。舉例而言，氮(N2 )及氨(NH3 )可作為額外氣體。再者，這些氣體可混合來形成絕緣膜。在甲基矽氮烷作為材料氣體來形成SiCN膜而作為絕緣膜的情況下，SiCN膜可不需使用額外氣體而形成。在使用甲基矽氮烷時使用氮(N2 )或氨(NH3 )的情況下，欲形成SiCN膜之含氮量可能會增加。以此方式，額外氣體可用來調整SiCN膜的含氮濃度。
在CF膜上形成絕緣膜前以電漿處理CF膜的情況下，因為CF膜表面存在之氟能夠被減少、移除，絕緣膜中氟的擴散作用可降低。並且，以電漿處理CF膜防止絕緣膜在受熱處理時的侵蝕。依此方式，CF膜與絕緣膜的接觸性能夠提升。在以電漿處理後在CF膜上形成絕緣膜的情況下，如圖3下半部所示之碳-碳耦合之交聯結構形成於基板62上，電子元件61會具有一絕緣膜結合碳-碳耦合之化學結構。此時，CF膜與絕緣膜之間的化學結構可如圖4下半部所示般。
茲藉由參照一特定範例，說明在CF膜上形成絕緣膜的處理。圖5繪示藉由利用電漿處理之單甲基矽烷(1MS)以及氮(N2 )或氨(NH3 )，電子元件61於CF膜65表面形成SiCN膜67。在此實施例中，單甲基矽烷(1MS)係作為材料氣體，因此所形成之SiCN膜67中之氮成分大於甲基成分。亦即，當以Six Cy Nz 形式表示處理中所形成之SiCN膜67時，其係Six Cy Nz 膜(在此，x、y、z係正整數，同時y、z滿足y<z)。此時，CF膜與SiCN膜之間的化學結構係例如圖5下半部所示般。吾人當可從圖5下半部所示之化學結構了解到，SiCN膜67係在一氮原子數量比甲基數量多的狀況下。
在CF膜上形成具有氮成分高於甲基成分的SiCN膜的情況下，因為SiCN膜對氟的阻障特徵增加，氟原子從CF膜到SiCN膜的擴散作用可能減少。因此，CF膜與SiCN膜的接觸性能夠增加。
圖6繪示電子元件61在圖5中形成之SiCN膜67上再形成一SiCN膜68。藉由使用受電漿處理之三甲基矽烷(3MS)以及氮(N2 )或氨(NH3 )，SiCN膜68便加以形成。因SiCN膜68係由使用三甲基矽烷(3MS)形成，其甲基成分便高於氮成分。亦即，當以Six’ Cy’ Nz’ 形式表示處理中形成之SiCN膜68時，其係Six’ Cy’ Nz’ 膜(在此，x’、y’、z’係正整數，同時y’、z’滿足y’>z’)。此時，介於CF膜65、SiCN膜67、SiCN膜68之間之化學結構係例如圖6下半部所示般。吾人當可從圖6下半部所示之化學結構了解到，SiCN膜68係在一氮原子數量大於甲基數量的狀況下。
因為圖6繪示之在處理中所形成的SiCN膜68使用具有少量氫成分之三甲基矽烷作為材料氣體，氫電漿對CF膜及SiCN膜67之損害便能降低。換言之，因氫原子很小，氫原子會穿過SiCN膜67，進入CF膜65，對CF膜65造成一些損害。當材料氣體中氫原子含量少時，損害亦會減少。此亦增進了CF膜65及SiCN膜67的接觸性。
茲根據本發明，描述一藉由產生電漿而形成膜之方法，以及一用以形成膜之電漿處理方法。本發明此實施態樣中，並不特別限定藉由產生電漿而形成膜之方法，任何方法皆可使用。以下說明使用電漿膜形成裝置之形成膜方法。
以下說明使用RLSA產生電漿之一CVD裝置。圖7與8根據本發明之第一實施例，表示一微波電漿處理設備10之結構。
參考圖7，微波電漿處理設備10包括一處理容器11，以及一設置於處理容器11中之載臺13，該載臺支持一欲受靜電夾頭處理之基板12，其中載臺13較好藉由一熱均壓式(HIP)處理而以AlN或Al2 O3 形成。在處理容器11中，空間11A中形成有至少二個或較好有三個或三個以上之排氣口111A，以等距圍繞在載臺13之周圍，如此與載臺13上之基板12形成軸向對稱。如後所說明，處理容器11藉由一漸進式導螺桿泵(gradational lead screw pump)經排氣口111A抽氣至一低氣壓。
處理容器11較好由含有Al之沃斯田(austenite)不鏽鋼形成，並且在內牆表面上藉由一氧化處理形成有鋁氧化物之保護膜。再者，在對應基板12之處理容器11外牆的部份上，形成有一藉由HIP處理形成之具有緻密Al2 O3 的碟狀噴淋板14，作為外牆的一部份，其中噴淋板14包括一大數量之噴嘴開孔14A。據此由HIP處理形成之Al2 O3 噴淋板14係由利用Y2 O3 添加物形成，且其孔隙率為0.03%或更低。此意味著，Al2 O3 噴淋板14實質上無孔隙或無針孔，且針對陶瓷而言，具有一非常大之熱導係數30W/mK，但此熱導係數並不大於AlN之熱導係數。
噴淋板14經由一密封環111S安裝於處理容器11上，且一亦藉由HIP處理而形成之具有緻密Al2 O3 的蓋板15經由一密封環111T設置於噴淋板14上。噴淋板14上位於噴淋板接觸蓋板15之一側，形成有一凹陷部14B，其與數個噴嘴開孔14A之各者連通，作為電漿通道，而其中該凹陷部14B亦連通在噴淋板14內部形成並與形成於處理容器11外牆上之電漿注入口111P有連通之另外電漿通道14C。
噴淋板14藉由形成在處理容器11內牆上之延展部唇部支撐，其中延展部111B之位於支撐噴淋板14的部分形成有一圓的表面，以抑制電荷。
因此，供給至電漿注入口111P之電漿如Ar或Kr，係在被傳送經過噴淋板14之通道14C與14B之後，均勻地經過數個開孔14A，供給至位於噴淋板14正下方之空間11B。
在蓋板15之上，提供有：一由碟狀容槽板16形成之徑向線槽形天線20，並形成有如圖8所示之一數量之容槽16A與16B，並與蓋板15緊密接觸；一碟狀天線主體17，固持容槽板16；及一相位差板18，其具低損耗介電材質如Al2 O3 、SiO2 或Si3 N4 ，並被包夾於容槽板16及天線主體17之間。徑向線槽形天線20經由密封環111U安裝在處理容器11上，而一頻率為2.45GHz或8.3GHz的微波從一外部微波源(未繪示)經由一共軸波導21導送入徑向線槽形天線20。據此供給之微波便從容槽板16上之容槽16A及16B經由蓋板15及噴淋板14放射進入處理容器之內部。藉此，在噴淋板14正下方之空間11B中，微波造成從開孔14A供給之電漿的電漿激發。吾人應注意到，蓋板15及噴淋板14由Al2 O3 形成，並作用為有效率之微波傳輸窗口。為了避免在電漿通道14A~14C中發生電漿激發，電漿在前述通道14A~14C中保持一約6666Pa~13332Pa(約50~100Torr)之氣壓。
為了改善介於徑向線槽形天線20與蓋板15之間的緊密接觸，本實施例之微波電漿處理設備10在部份處理容器11上具有之一環狀溝槽111G，俾能嚙合容槽板16。藉由經由與溝槽連通之排氣口11G排空溝槽，形成於容槽板16與蓋板15之間之空隙的氣壓便會降低，使徑向線槽形天線20由大氣壓力驅策而緊密依附在蓋板15上。吾人需注意的是，此一空隙不僅包括形成在容槽板16上之容槽16A及16B，更包括由其他各種原因形成之空隙。吾人更需注意到，此一空隙係由介於徑向線槽形天線20與處理容器11之間設置之密封環111U所密封。
藉由經由排氣口11G及溝槽111G將一小分子量之惰性氣體填滿介於容槽板16與蓋板15之間之空隙，便可促進由蓋板15到容槽板16之熱傳遞。藉此，有鑒於He之高熱傳導性及高游離能，一較佳狀況為使用He作為該惰性氣體。在以He填滿該空隙的情況下，一較佳狀況為將氣壓設定在約0.8atm。在圖7之構造中，排氣口11G設有一閥11V，用以排空溝槽111G，並以惰性氣體填滿溝槽111G。
吾人需注意到，共軸波導21之一外部波導管21A係連接到碟狀天線主體17，而一中央導體21B係經由一在相位差板18上形成之開口連接到容槽板16。因此，被送入共軸導波管21的微波在介於天線主體17與容槽板16之間以徑向方向傳播，並從容槽16A及16B發射出。
圖8繪示容槽16A及16B形成於容槽板16上。參照圖8，容槽16A以同心圓方式設置，且各容槽16A設置有一容槽16B，使容槽16B垂直地越過容槽16A，使容槽16B以同心圓方式與容槽16A對準。容槽16A與16B相對於由相位差板18所壓縮之微波的波長在容槽板16上之徑向方向以一間隔形成；因此，微波以近乎平面波的形式從容槽板16放射出去。因為容槽16A與16B形成一相互垂直關係，依此放射之微波形成一包括二個垂直極化分量之圓形極化波。
在圖7的電漿處理設備10中，在天線主體17上設置有一冷卻部件19及隨之形成之一冷卻水通道19A，且累積在噴淋板14之熱能係經由徑向線槽形天線20吸收，其係藉由以冷卻水通道19A中之冷卻水將冷卻部件19冷卻。冷卻水通道19A在冷卻部件19上以螺旋形式形成，且具有受控制氧化還原電位的冷卻水係提供至該處，其中氧化還原電位的控制，係藉由經H2 氣體起泡將溶解於冷卻水中的氧消除。
在圖7之微波電漿處理設備10中，在介於噴淋板14與載臺13上基板12之間的處理容器11中，更設置有一處理氣體供給機構31，其中處理氣體供給機構31具有設置成格狀之開孔31A，並透過一大數量之處理氣體噴嘴開孔，釋放由來自設置於處理容器11外牆上之處理氣體注入口111R的處理氣體。藉此，在一介於處理氣體供給機構31與基板12之間之空間11C中，便可達到期望之均勻基板處理。此般基板處理包括電漿氧化處理、電漿氮化處理、電漿氧氮化處理、電漿CVD處理。再者，吾人亦可能對基板12進行反應性離子蝕刻，其係藉由供給容易分解之氟化碳氣體，如C4 F8 、C5 F8 、C4 F6 或含F或Cl之蝕刻氣體，並係更進一步藉由從一高頻電源13A供給一高頻電壓到載臺13。
在本實施例之微波電漿處理設備10中，藉由將處理容器11之外牆加熱至約150℃，吾人可能可避免反應副產物沉積在處理容器之內牆上。藉此，微波電漿處理設備10僅大概每日進行乾燥清潔處理，而能持續且可靠地操作。
圖9係一底視圖，繪示圖7中處理氣體供給機構31之結構。參照圖9，處理氣體供給機構31形成為一碟狀導性構件311及312之疊層，如含有Mg之Al合金或添加有Al之不鏽鋼。該處並有以矩陣形式設置之開孔31A，以作為電漿通道。舉例而言，開孔31A的尺寸大小為19mm×19mm，以24mm為間隔在橫列及直行之兩方向重複地設置。處理氣體供給機構31具有約為8.5mm之總厚度，其典型地以離基板12之表面約16mm之間隔處安裝。
圖10係一底視圖，繪示圖7中碟狀導性構件311之結構。參照圖10，在碟狀導性構件311中，設置有一格狀處理氣體通道31B，處理氣體通道31B與沿著碟狀導性構件311外周緣形成之處理氣體供給通道31C相連通，此在圖10中以虛線表示。處理氣體供給通道31C連接到處理氣體注入口111R。在碟狀導性構件311的相反面，形成有與處理氣體通道31B連通之一大數量的處理氣體噴嘴開孔31D。處理氣體從處理氣體噴嘴開孔31D釋放到碟狀導性構件312。
甲基矽烷(如單甲基矽烷、二甲基矽烷、三甲基矽烷、四甲基矽烷)或矽氮烷(如甲基矽氮烷、乙基矽氮烷)可從電漿注入口111P流入空間11B。而且，氮氣或氨氣可從電漿注入口111P流入空間11B。再者，如氬氣之惰性氣體或氫氣可從電漿注入口111P流入空間11B。在微波電漿處理設備10中，氣體流率亦可受調整。氣體流率的調整可依時間進行，或藉由形成膜之各步驟進行，藉此容許根據所期望之膜的特徵或種類來調整。
舉例而言，甲基矽烷(如單甲基矽烷、二甲基矽烷、三甲基矽烷、四甲基矽烷)或矽氮烷(如甲基矽氮烷、乙基矽氮烷)可從處理器體注入口111R流入空間11C。而且，氮氣或氨氣可從處理器體注入口111R流入空間11C。再者，如氬氣之惰性氣體或氫氣可從電漿注入口111R流入空間11C。在微波電漿處理設備10中，氣體流率可受調整。氣體流率的調整可依時間進行，或藉由形成膜之各步驟進行，藉此容許根據所期望之膜的特徵或種類來調整。
茲根據本發明並參考實驗數據，說明一電子元件之CF膜與絕緣膜之接觸性。圖11繪示CF膜與絕緣膜接觸性的量測結果，其係利用四點彎曲法(4-Point Bending Method)。在四點彎曲法中，首先，在基板上形成一薄膜；在此之後，將其切割成條狀作為試料，並將該試料水平置放。該方法接著便以垂直方向施加一負載於水平置放試料之距離較長的兩端上，便可獲得膜剝離之位置的量測結果與膜剝離時之負載值。
圖11繪示CF膜與絕緣膜接觸性的量測結果，其係將四點彎曲法應用於所製造之電子元件中CF膜未使用CO電漿處理者。圖11中之橫軸表示負載施加時之位移量。圖11中之縱軸表示施加於試料之負載的大小。
從圖11中可觀察到，當施加於試料之負載增加時，位移量亦增加。亦即，可觀察到對試料膜的負載在增加。並且，當負載達到2.80lbs時，位移量驟然降低。此表示膜從試料表面以水平方向剝離之情況，此係因為試料膜不能再承受負載，而藉此卸除負載。
圖12繪示CF膜與絕緣膜接觸性的量測結果，其係將四點彎曲法應用於所製造之電子元件中對CF膜施加CO電漿處理者。圖12中之橫軸表示對試料施加一負載時的位移量。圖12中之縱軸表示施加於試料之負載的大小。
從圖12中可觀察到，當施加於試料的負載增加時，位移量亦增加。亦即，對試料膜的負載在增加。並且，當負載達到3.15lbs時，位移量驟然降低。此表示膜從試料表面以水平方向剝離之情況，此係因為試料膜不能再承受負載，而藉此卸除負載。
藉由比較圖11及圖12的實驗結果，吾人可發現，對於電子元件中具有對CF膜施加CO電漿後形成絕緣膜者，相較於未進行CO電漿處理之電子元件，具有較高之CF膜與絕緣膜之接觸性。
上述說明本發明之一實施例，但本發明並不受限於上述特定範例。舉例而言，上述實施例中絕緣膜係形成於基板上，但根據本發明之用以形成膜之電漿處理方法亦可應用於形成其他膜，如電極膜。此外，其他電漿，如氙電漿或氪電漿，皆可被用以提供自噴淋板14。再者，根據本發明之用以形成膜之電漿處理方法不僅可用於半導體裝置之基板，更可應用於如製造液晶顯示器或有機電致發光元件用之基板。
本發明相關之基板處理包括如電漿氧化處理、電漿氮化處理、電漿氧氮化處理、電漿CVD處理及其他類似處理。根據本實施例之微波電漿處理設備10，藉由將上述處理容器之外牆加熱至約150℃的溫度，能避免反應副產物等沉積於內牆上，並能在每日乾式清潔一次的情況下持續且穩定地操作。
10．．．微波電漿處理設備
11．．．處理容器
11A．．．空間
11B．．．空間
11C．．．空間
11G．．．排氣口
11V．．．閥
111A．．．排氣口
111B．．．延展部
111G．．．溝槽
111P．．．電漿注入口
111R．．．處理氣體注入口
111S．．．密封環
111T．．．密封環
111U．．．密封環
12．．．基板
13．．．載臺
13A．．．電源
14．．．噴淋板
14A．．．噴嘴開孔
14B．．．凹陷部
14C．．．電漿通道
15．．．蓋板
16．．．容槽板
16A．．．容槽
16B．．．容槽
17．．．天線主體
18．．．相位差板
19．．．冷卻部件
19A．．．冷卻水通道
20．．．徑向線槽形天線
21．．．共軸波導
21A．．．波導管
21B．．．中央導體
31．．．處理氣體供給機構
31A．．．開孔
31B．．．氣體通道
31C．．．處理氣體供給通道
31D．．．處理氣體噴嘴開孔
311．．．導性構件
312．．．導性構件
61．．．電子元件
62．．．基板
63．．．CF膜
64．．．氣體
65．．．CF膜
66．．．絕緣膜
67．．．SiCN膜
68．．．SiCN膜
圖1繪示一電子元件於基板上形成CF膜。
圖2繪示以受電漿處理之氣體處理基板上形成之CF膜的表面之狀態。
圖3繪示在CF膜表面移除一氟端基後之電子元件。
圖4繪示電子元件利用一受電漿處理之材料氣體，在CF膜上形成絕緣膜。
圖5繪示電子元件利用單甲基矽烷(1MS)及氮(N2 )或氨(NH3 )，在CF膜表面上形成SiCN膜。
圖6繪示電子元件更在圖5中所形成之SiCN膜上形成SiCN膜。
圖7及圖8根據本發明之第一實施例，繪示微波電漿處理設備之結構。
圖9係圖7及圖8中微波電漿處理設備之處理氣體供給機構之結構的立體圖。
圖10係一底視圖，繪示構成圖9中處理氣體供給機構之一部份的碟狀導性構件。
圖11係針對電子元件中CF膜未以CO電漿處理者，繪示其CF膜與絕緣膜之接觸性的量測結果。
圖12係針對電子元件中CF膜以CO電漿處理者，繪示其CF膜與絕緣膜之接觸性的量測結果。
61．．．電子元件
62．．．基板
63．．．CF膜

Claims (10)

  1. 一種半導體裝置製造方法，包含如下步驟：形成一氟化絕緣膜；藉由與單甲基矽烷反應，而在該氟化絕緣膜上沉積一第一Six Cy Nz 膜；及藉由與三甲基矽烷反應，而在該第一Six Cy Nz 膜上沉積一第二Six Cy Nz 膜，其中該第一Six Cy Nz 膜滿足一方程式「y<z」，以及該第二Six Cy Nz 膜滿足一方程式「y>z」。
  2. 如申請專利範圍第1項之半導體裝置製造方法，其中該氟化絕緣膜之表面以一CO電漿處理之。
  3. 如申請專利範圍第１項之半導體裝置製造方法，其中該方法包括以下步驟：藉由以一微波電漿處理設備處理該單甲基矽烷而沉積該第一Six Cy Nz 膜。
  4. 如申請專利範圍第1項之半導體裝置製造方法，其中該方法包括以下步驟：藉由以一微波電漿處理設備處理該三甲基矽烷而沉積該第二Six Cy Nz 膜。
  5. 如申請專利範圍第1項之半導體裝置製造方法，其中該氟化絕緣膜係以一選自於由一C4 F6 氣體、一C5 F8 氣體及一C3 F4 氣體所組成之群組中之一材料氣體製成。
  6. 一種半導體裝置，其包含：一氟化絕緣膜；一第一Six Cy Nz 膜，藉由與單甲基矽烷反應而沉積於該氟化絕緣膜上，其中該第一Six Cy Nz 膜滿足一方程式「y<z」；及一第二Six Cv Nz 膜，藉由與三甲基矽烷反應而沉積於該第一 Six Cy Nz 膜上，其中該第二Six Cy Nz 膜滿足一方程式「y>z」。
  7. 如申請專利範圍第6項之半導體裝置，其中該氟化絕緣膜之表面以一CO電漿處理之。
  8. 如申請專利範圍第6項之半導體裝置，其中該單甲基矽烷以一微波電漿處理設備處理之。
  9. 如申請專利範圍第6項之半導體裝置，其中該三甲基矽烷以一微波電漿處理設備處理之。
  10. 如申請專利範圍第6項之半導體裝置，其中該氟化絕緣膜係以一選自於由一C4 F6 氣體、一C5 F8 氣體及一C3 F4 氣體所組成之群組中之一材料氣體製成。
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