JP6046351B2 - 絶縁膜およびその製造方法 - Google Patents
絶縁膜およびその製造方法 Download PDFInfo
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- JP6046351B2 JP6046351B2 JP2012009098A JP2012009098A JP6046351B2 JP 6046351 B2 JP6046351 B2 JP 6046351B2 JP 2012009098 A JP2012009098 A JP 2012009098A JP 2012009098 A JP2012009098 A JP 2012009098A JP 6046351 B2 JP6046351 B2 JP 6046351B2
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- gas
- silicon nitride
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- nitride film
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- 238000004519 manufacturing process Methods 0.000 title claims description 94
- 239000007789 gas Substances 0.000 claims description 371
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 150
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 150
- 239000000758 substrate Substances 0.000 claims description 58
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 33
- 229910052731 fluorine Inorganic materials 0.000 claims description 26
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 25
- 239000011737 fluorine Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 10
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 9
- 125000001153 fluoro group Chemical group F* 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000010408 film Substances 0.000 description 248
- 239000004020 conductor Substances 0.000 description 29
- 230000015556 catabolic process Effects 0.000 description 25
- 239000011521 glass Substances 0.000 description 18
- 230000005684 electric field Effects 0.000 description 17
- 238000010586 diagram Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 230000007423 decrease Effects 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 239000000284 extract Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- -1 and in general Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Description
図4は、図1に示す絶縁膜10の製造方法1におけるガス流量のタイミングチャートである。
図8は、図1に示す絶縁膜10の製造方法2におけるガス流量のタイミングチャートである。
図11は、図1に示す絶縁膜10の製造方法3におけるガス流量のタイミングチャートである。
Claims (5)
- 酸素原子を含む基板上に配置された第1のシリコンナイトライド膜と、
前記第1のシリコンナイトライド膜に接して配置された第2のシリコンナイトライド膜とを備え、
前記第1および第2のシリコンナイトライド膜の各々は、5at%より少ない水素濃度を有し、
前記第1のシリコンナイトライド膜は、5〜100nmの膜厚を有し、
前記第2のシリコンナイトライド膜は、5〜500nmの膜厚を有し、
前記第2のシリコンナイトライド膜に含まれるフッ素量は、前記第1のシリコンナイトライド膜に含まれるフッ素量よりも多い、絶縁膜。 - シリコン原子とフッ素原子とを含む主ガスと、少なくとも窒素ガスからなる副ガスとのガス流量比を基準値以上に設定して酸素原子を含む基板上に第1のシリコンナイトライド膜を堆積する第1の工程と、
前記主ガスと窒素ガスとのガス流量比を前記基準値よりも小さい値に設定して前記第1のシリコンナイトライド膜に接して第2のシリコンナイトライド膜を堆積する第2の工程とを備える絶縁膜の製造方法。 - 前記副ガスは、水素原子を含むガスと酸素原子を含むガスとのいずれかと、窒素ガスとからなる、請求項2に記載の絶縁膜の製造方法。
- 前記副ガスは、水素原子を含むガスと、窒素ガスとからなる、請求項2に記載の絶縁膜の製造方法。
- 前記基板の表面は、金属によって覆われており、
前記副ガスは、窒素ガスのみからなる、請求項2に記載の絶縁膜の製造方法。
Priority Applications (6)
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JP2012009098A JP6046351B2 (ja) | 2012-01-19 | 2012-01-19 | 絶縁膜およびその製造方法 |
PCT/JP2012/075774 WO2013051644A1 (ja) | 2011-10-07 | 2012-10-04 | 絶縁膜およびその製造方法 |
KR1020137035127A KR20140071971A (ko) | 2011-10-07 | 2012-10-04 | 절연막 및 그 제조 방법 |
KR1020187029711A KR20180115808A (ko) | 2011-10-07 | 2012-10-04 | 절연막 및 그 제조 방법 |
CN201280049140.7A CN103875077B (zh) | 2011-10-07 | 2012-10-04 | 绝缘膜及其制造方法 |
TW101137001A TWI541900B (zh) | 2011-10-07 | 2012-10-05 | 絕緣膜及其製造方法 |
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JP2012009098A JP6046351B2 (ja) | 2012-01-19 | 2012-01-19 | 絶縁膜およびその製造方法 |
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JP2013149788A JP2013149788A (ja) | 2013-08-01 |
JP6046351B2 true JP6046351B2 (ja) | 2016-12-14 |
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Families Citing this family (1)
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JP6004459B1 (ja) | 2015-12-08 | 2016-10-05 | 国立大学法人 奈良先端科学技術大学院大学 | 薄膜トランジスタとその製造方法および前記薄膜トランジスタを有する半導体装置 |
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US8197913B2 (en) * | 2007-07-25 | 2012-06-12 | Tokyo Electron Limited | Film forming method for a semiconductor |
JP5496500B2 (ja) * | 2007-12-18 | 2014-05-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2011125395A1 (ja) * | 2010-04-09 | 2011-10-13 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
WO2012128044A1 (ja) * | 2011-03-23 | 2012-09-27 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理方法および基板処理装置 |
JP2015181149A (ja) * | 2014-03-06 | 2015-10-15 | 株式会社日立国際電気 | 基板処理装置及び半導体装置の製造方法並びに記録媒体 |
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