KR101988782B1 - 임프린트용 광경화성 조성물, 이를 사용한 막의 제조 방법, 이를 사용한 광학 부품의 제조 방법, 이를 사용한 회로 기판의 제조 방법, 및 이를 사용한 전자 부품의 제조 방법 - Google Patents

임프린트용 광경화성 조성물, 이를 사용한 막의 제조 방법, 이를 사용한 광학 부품의 제조 방법, 이를 사용한 회로 기판의 제조 방법, 및 이를 사용한 전자 부품의 제조 방법 Download PDF

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KR101988782B1
KR101988782B1 KR1020177019229A KR20177019229A KR101988782B1 KR 101988782 B1 KR101988782 B1 KR 101988782B1 KR 1020177019229 A KR1020177019229 A KR 1020177019229A KR 20177019229 A KR20177019229 A KR 20177019229A KR 101988782 B1 KR101988782 B1 KR 101988782B1
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film
meth
photocurable composition
photocurable
producing
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Korean (ko)
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KR20170094386A (ko
Inventor
시오리 요네자와
도시키 이토
도모노리 오타니
가즈미 이와시타
다케시 혼마
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캐논 가부시끼가이샤
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Priority claimed from JP2015099486A external-priority patent/JP6624808B2/ja
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Priority claimed from PCT/JP2015/006244 external-priority patent/WO2016098345A1/en
Publication of KR20170094386A publication Critical patent/KR20170094386A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00—Processes of polymerisation
    • C08F2/46—Polymerisation initiated by wave energy or particle radiation
    • C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/18—Diffraction gratings
    • G02B5/1847—Manufacturing methods
    • G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H01L21/0337—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Polymerisation Methods In General (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020177019229A 2014-12-19 2015-12-15 임프린트용 광경화성 조성물, 이를 사용한 막의 제조 방법, 이를 사용한 광학 부품의 제조 방법, 이를 사용한 회로 기판의 제조 방법, 및 이를 사용한 전자 부품의 제조 방법 Active KR101988782B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JPJP-P-2014-257798 2014-12-19
JP2014257798 2014-12-19
JPJP-P-2015-099486 2015-05-14
JP2015099486A JP6624808B2 (ja) 2014-07-25 2015-05-14 光硬化性組成物、これを用いた硬化物パターンの製造方法、光学部品の製造方法、回路基板の製造方法
JPJP-P-2015-232535 2015-11-28
JP2015232535A JP6324363B2 (ja) 2014-12-19 2015-11-28 インプリント用光硬化性組成物、これを用いた膜の製造方法、光学部品の製造方法、回路基板の製造方法、電子部品の製造方法
PCT/JP2015/006244 WO2016098345A1 (en) 2014-12-19 2015-12-15 Photocurable composition for imprint, method for producing film using the same, method for producing optical component using the same, method for producing circuit board using the same, and method for producing electronic component using the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020197016193A Division KR102059314B1 (ko) 2014-12-19 2015-12-15 임프린트용 광경화성 조성물, 이를 사용한 막의 제조 방법, 이를 사용한 광학 부품의 제조 방법, 이를 사용한 회로 기판의 제조 방법, 및 이를 사용한 전자 부품의 제조 방법

Publications (2)

Publication Number Publication Date
KR20170094386A KR20170094386A (ko) 2017-08-17
KR101988782B1 true KR101988782B1 (ko) 2019-06-12

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KR1020177019229A Active KR101988782B1 (ko) 2014-12-19 2015-12-15 임프린트용 광경화성 조성물, 이를 사용한 막의 제조 방법, 이를 사용한 광학 부품의 제조 방법, 이를 사용한 회로 기판의 제조 방법, 및 이를 사용한 전자 부품의 제조 방법
KR1020197016193A Active KR102059314B1 (ko) 2014-12-19 2015-12-15 임프린트용 광경화성 조성물, 이를 사용한 막의 제조 방법, 이를 사용한 광학 부품의 제조 방법, 이를 사용한 회로 기판의 제조 방법, 및 이를 사용한 전자 부품의 제조 방법
KR1020197037480A Active KR102246568B1 (ko) 2014-12-19 2015-12-15 임프린트용 광경화성 조성물, 이를 사용한 막의 제조 방법, 이를 사용한 광학 부품의 제조 방법, 이를 사용한 회로 기판의 제조 방법, 및 이를 사용한 전자 부품의 제조 방법

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KR1020197016193A Active KR102059314B1 (ko) 2014-12-19 2015-12-15 임프린트용 광경화성 조성물, 이를 사용한 막의 제조 방법, 이를 사용한 광학 부품의 제조 방법, 이를 사용한 회로 기판의 제조 방법, 및 이를 사용한 전자 부품의 제조 방법
KR1020197037480A Active KR102246568B1 (ko) 2014-12-19 2015-12-15 임프린트용 광경화성 조성물, 이를 사용한 막의 제조 방법, 이를 사용한 광학 부품의 제조 방법, 이를 사용한 회로 기판의 제조 방법, 및 이를 사용한 전자 부품의 제조 방법

Country Status (5)

Country Link
US (2) US11003073B2 (https=)
JP (3) JP6324363B2 (https=)
KR (3) KR101988782B1 (https=)
CN (1) CN107112208B (https=)
TW (1) TWI596431B (https=)

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