KR101934171B1 - 감광성 수지 조성물, 경화 릴리프 패턴의 제조 방법, 그리고 반도체 장치 - Google Patents

감광성 수지 조성물, 경화 릴리프 패턴의 제조 방법, 그리고 반도체 장치 Download PDF

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KR101934171B1
KR101934171B1 KR1020167022632A KR20167022632A KR101934171B1 KR 101934171 B1 KR101934171 B1 KR 101934171B1 KR 1020167022632 A KR1020167022632 A KR 1020167022632A KR 20167022632 A KR20167022632 A KR 20167022632A KR 101934171 B1 KR101934171 B1 KR 101934171B1
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resin composition
photosensitive resin
mass
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KR20160110496A (ko
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노부히로 안자이
다이스케 사사노
히로코 고가
다이헤이 이노우에
도모히로 요리스에
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아사히 가세이 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0751—Silicon-containing compounds used as adhesion-promoting additives or as means to improve adhesion
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Laminated Bodies (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polymerisation Methods In General (AREA)
  • Graft Or Block Polymers (AREA)
KR1020167022632A 2014-03-17 2015-03-16 감광성 수지 조성물, 경화 릴리프 패턴의 제조 방법, 그리고 반도체 장치 Active KR101934171B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JPJP-P-2014-053398 2014-03-17
JP2014053398 2014-03-17
JPJP-P-2014-184564 2014-09-10
JP2014184564 2014-09-10
JP2014185392 2014-09-11
JPJP-P-2014-185392 2014-09-11
PCT/JP2015/057678 WO2015141618A1 (ja) 2014-03-17 2015-03-16 感光性樹脂組成物、硬化レリーフパターンの製造方法、並びに半導体装置

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Publication Number Publication Date
KR20160110496A KR20160110496A (ko) 2016-09-21
KR101934171B1 true KR101934171B1 (ko) 2018-12-31

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JP (2) JP6388640B2 (enExample)
KR (1) KR101934171B1 (enExample)
CN (2) CN106104381B (enExample)
TW (1) TWI548674B (enExample)
WO (1) WO2015141618A1 (enExample)

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KR102229738B1 (ko) * 2015-08-21 2021-03-18 아사히 가세이 가부시키가이샤 감광성 수지 조성물, 폴리이미드의 제조 방법 및 반도체 장치
KR101857148B1 (ko) * 2015-11-12 2018-05-11 삼성에스디아이 주식회사 신규한 가교제를 포함하는 감광성 수지 조성물 및 이를 이용한 유기막
TWI731895B (zh) * 2015-12-08 2021-07-01 日商富士軟片股份有限公司 感放射線性樹脂組成物、硬化膜、圖案形成方法、固體攝影元件及影像顯示裝置
KR102469461B1 (ko) * 2016-01-14 2022-11-22 제이에스알 가부시끼가이샤 막 형성용 조성물, 막, 패턴이 형성된 기판의 제조 방법 및 화합물
WO2017141723A1 (ja) * 2016-02-19 2017-08-24 富士フイルム株式会社 硬化性組成物、遮光膜、固体撮像装置、および、カラーフィルタ
JP7027885B2 (ja) * 2016-03-18 2022-03-02 東レ株式会社 ネガ型感光性樹脂組成物、硬化膜、硬化膜を具備する表示装置、及びその製造方法
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KR102300328B1 (ko) * 2017-03-29 2021-09-09 동우 화인켐 주식회사 흑색 감광성 수지 조성물, 이를 이용하여 제조된 표시 장치
JP6824389B2 (ja) 2017-03-29 2021-02-03 富士フイルム株式会社 感光性樹脂組成物、硬化膜、積層体、硬化膜の製造方法および半導体デバイス
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011059656A (ja) * 2009-06-04 2011-03-24 Asahi Kasei E-Materials Corp ネガ型感光性樹脂組成物、硬化レリーフパターン形成・製造方法、並びに半導体装置
JP2011059176A (ja) * 2009-09-07 2011-03-24 Hitachi Chem Co Ltd 感光性樹脂組成物、永久レジスト用感光性フィルム、レジストパターンの形成方法、プリント配線板及びその製造方法、表面保護膜並びに層間絶縁膜
JP2012091430A (ja) * 2010-10-28 2012-05-17 Toray Ind Inc フィルム積層体
JP2013114238A (ja) * 2011-12-01 2013-06-10 Toray Ind Inc ポジ型感光性組成物、そのポジ型感光性組成物から形成された硬化膜、およびその硬化膜を有する素子。

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
JPH0673003A (ja) * 1992-08-28 1994-03-15 Toshiba Corp ビスマレイミド化合物及び感光性樹脂組成物
JP3361624B2 (ja) * 1994-08-17 2003-01-07 富士フイルムアーチ株式会社 ポジ型感光性組成物
US5925498A (en) * 1997-06-16 1999-07-20 Kodak Polychrome Graphics Llc Photosensitive polymer composition and element containing photosensitive polyamide and mixture of acrylates
JP4462679B2 (ja) * 1999-03-30 2010-05-12 旭化成イーマテリアルズ株式会社 シリコン系カップリング剤及びその用途
JP5128574B2 (ja) * 1999-03-30 2013-01-23 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
JP2001272777A (ja) * 2000-03-24 2001-10-05 Hitachi Chemical Dupont Microsystems Ltd 感光性ポリイミド前駆体組成物及びそれを用いたパターンの製造法並びに電子部品
JP2002099084A (ja) * 2000-09-25 2002-04-05 Toshiba Chem Corp 感光性樹脂組成物およびその製造方法
JP4687938B2 (ja) * 2001-09-13 2011-05-25 日立化成デュポンマイクロシステムズ株式会社 ネガ型感光性樹脂組成物、パターンの製造法及び電子部品
JP3809998B2 (ja) * 2001-10-15 2006-08-16 サンクス株式会社 ガルバノスキャニング式レーザマーキング装置及びその投影像投射方法。
JP4046563B2 (ja) 2002-01-25 2008-02-13 旭化成エレクトロニクス株式会社 高耐熱性感光性樹脂組成物
JP4789657B2 (ja) * 2006-03-13 2011-10-12 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
JP4695533B2 (ja) * 2006-03-23 2011-06-08 三菱製紙株式会社 ネガ型感光性平版印刷版
JP4918313B2 (ja) * 2006-09-01 2012-04-18 旭化成イーマテリアルズ株式会社 感光性樹脂組成物
CN101568572B (zh) * 2007-10-26 2012-03-21 旭化成电子材料株式会社 聚酰亚胺前体和包含聚酰亚胺前体的感光性树脂组合物
JP2009251451A (ja) * 2008-04-09 2009-10-29 Hitachi Chem Co Ltd 感光性樹脂組成物及び感光性エレメント
JP5446203B2 (ja) * 2008-10-15 2014-03-19 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、該樹脂組成物を用いたパターン硬化膜の製造方法及び電子部品
WO2011059089A1 (ja) * 2009-11-16 2011-05-19 旭化成イーマテリアルズ株式会社 ポリイミド前駆体及び該ポリイミド前駆体を含む感光性樹脂組成物
JP2011204515A (ja) * 2010-03-26 2011-10-13 Toray Ind Inc 感光性導電ペーストおよび導電パターンの製造方法
KR20120021488A (ko) * 2010-08-03 2012-03-09 주식회사 동진쎄미켐 네가티브 감광성 수지 조성물
TWI430024B (zh) * 2010-08-05 2014-03-11 Asahi Kasei E Materials Corp A photosensitive resin composition, a method for manufacturing a hardened bump pattern, and a semiconductor device
JP2013117669A (ja) * 2011-12-05 2013-06-13 Hitachi Chemical Co Ltd 感光性樹脂組成物、並びにこれを用いた感光性フィルム、レジストパターンの形成方法及びプリント配線板
JP2013205801A (ja) * 2012-03-29 2013-10-07 Sumitomo Bakelite Co Ltd 感光性樹脂組成物及びその硬化膜、保護膜、絶縁膜並びに半導体装置及び表示体装置
WO2013168675A1 (ja) * 2012-05-07 2013-11-14 旭化成イーマテリアルズ株式会社 ネガ型感光性樹脂組成物、硬化レリーフパターンの製造方法、及び半導体装置
WO2014097594A1 (ja) * 2012-12-21 2014-06-26 日立化成デュポンマイクロシステムズ株式会社 ポリイミド前駆体樹脂組成物
JP5987984B2 (ja) * 2013-06-12 2016-09-07 Jsr株式会社 樹脂組成物、感光性樹脂組成物、絶縁膜およびその製法ならびに電子部品
TW201520695A (zh) * 2013-09-25 2015-06-01 Fujifilm Corp 感光性樹脂組成物、硬化膜的製造方法、硬化膜、液晶顯示裝置及有機ｅｌ顯示裝置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011059656A (ja) * 2009-06-04 2011-03-24 Asahi Kasei E-Materials Corp ネガ型感光性樹脂組成物、硬化レリーフパターン形成・製造方法、並びに半導体装置
JP2011059176A (ja) * 2009-09-07 2011-03-24 Hitachi Chem Co Ltd 感光性樹脂組成物、永久レジスト用感光性フィルム、レジストパターンの形成方法、プリント配線板及びその製造方法、表面保護膜並びに層間絶縁膜
JP2012091430A (ja) * 2010-10-28 2012-05-17 Toray Ind Inc フィルム積層体
JP2013114238A (ja) * 2011-12-01 2013-06-10 Toray Ind Inc ポジ型感光性組成物、そのポジ型感光性組成物から形成された硬化膜、およびその硬化膜を有する素子。

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