KR101764053B1 - 반사 전극용 또는 배선 전극용 Ag 합금막, 반사 전극 또는 배선 전극, 및 Ag 합금 스퍼터링 타겟 - Google Patents

반사 전극용 또는 배선 전극용 Ag 합금막, 반사 전극 또는 배선 전극, 및 Ag 합금 스퍼터링 타겟 Download PDF

Info

Publication number
KR101764053B1
KR101764053B1 KR1020157036037A KR20157036037A KR101764053B1 KR 101764053 B1 KR101764053 B1 KR 101764053B1 KR 1020157036037 A KR1020157036037 A KR 1020157036037A KR 20157036037 A KR20157036037 A KR 20157036037A KR 101764053 B1 KR101764053 B1 KR 101764053B1
Authority
KR
South Korea
Prior art keywords
film
alloy film
alloy
electrode
transparent conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020157036037A
Other languages
English (en)
Korean (ko)
Other versions
KR20160013102A (ko
Inventor
요코 시다
히로시 고토
모토타카 오치
Original Assignee
가부시키가이샤 고베 세이코쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 고베 세이코쇼 filed Critical 가부시키가이샤 고베 세이코쇼
Publication of KR20160013102A publication Critical patent/KR20160013102A/ko
Application granted granted Critical
Publication of KR101764053B1 publication Critical patent/KR101764053B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
    • F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H01L21/02266—
    • H01L51/5218—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • H10W20/4435—Noble-metal alloys
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12896—Ag-base component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
  • Conductive Materials (AREA)
  • Non-Insulated Conductors (AREA)
  • Optics & Photonics (AREA)
  • General Engineering & Computer Science (AREA)
KR1020157036037A 2013-06-26 2014-06-11 반사 전극용 또는 배선 전극용 Ag 합금막, 반사 전극 또는 배선 전극, 및 Ag 합금 스퍼터링 타겟 Expired - Fee Related KR101764053B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2013-134344 2013-06-26
JP2013134344 2013-06-26
PCT/JP2014/065518 WO2014208341A1 (ja) 2013-06-26 2014-06-11 反射電極用または配線電極用Ａｇ合金膜、反射電極または配線電極、およびＡｇ合金スパッタリングターゲット

Publications (2)

Publication Number Publication Date
KR20160013102A KR20160013102A (ko) 2016-02-03
KR101764053B1 true KR101764053B1 (ko) 2017-08-01

Family

ID=52141685

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157036037A Expired - Fee Related KR101764053B1 (ko) 2013-06-26 2014-06-11 반사 전극용 또는 배선 전극용 Ag 합금막, 반사 전극 또는 배선 전극, 및 Ag 합금 스퍼터링 타겟

Country Status (6)

Country Link
US (2) US9947429B2 (OSRAM)
JP (1) JP6208629B2 (OSRAM)
KR (1) KR101764053B1 (OSRAM)
CN (1) CN105324510B (OSRAM)
TW (1) TWI527912B (OSRAM)
WO (1) WO2014208341A1 (OSRAM)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6630433B2 (ja) * 2016-05-12 2020-01-15 アルプスアルパイン株式会社 入力装置
JP6783984B2 (ja) * 2016-07-19 2020-11-11 豊田合成株式会社 発光素子
CN107863458B (zh) * 2017-10-30 2019-11-15 武汉华星光电半导体显示技术有限公司 Oled基板的制作方法及oled显示装置的制作方法
JP6908164B2 (ja) * 2019-12-02 2021-07-21 三菱マテリアル株式会社 Ａｇ合金膜
KR20220107191A (ko) * 2019-12-02 2022-08-02 미쓰비시 마테리알 가부시키가이샤 Ag 합금막, Ag 합금 스퍼터링 타깃
KR20220097789A (ko) 2020-12-31 2022-07-08 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
KR20240025131A (ko) * 2022-08-17 2024-02-27 삼성디스플레이 주식회사 표시 패널 및 이를 구비하는 표시 장치
TWI897345B (zh) * 2024-02-19 2025-09-11 瀚宇彩晶股份有限公司 畫素陣列基板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004126497A (ja) 2002-08-08 2004-04-22 Kobe Steel Ltd 光反射膜およびこれを用いた液晶表示素子、ならびに光反射膜用スパッタリングターゲット
JP2005100604A (ja) * 2003-08-20 2005-04-14 Mitsubishi Materials Corp 光記録媒体の反射膜および反射膜形成用銀合金スパッタリングターゲット
JP2010225586A (ja) 2008-11-10 2010-10-07 Kobe Steel Ltd 有機ｅｌディスプレイ用の反射アノード電極および配線膜

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08203335A (ja) 1995-01-30 1996-08-09 Toppan Printing Co Ltd 透明導電膜及びその形成方法
JP3655907B2 (ja) 2002-08-20 2005-06-02 株式会社神戸製鋼所 光情報記録媒体用反射膜と半透過反射膜、および光情報記録媒体
US7514037B2 (en) 2002-08-08 2009-04-07 Kobe Steel, Ltd. AG base alloy thin film and sputtering target for forming AG base alloy thin film
JP3997177B2 (ja) 2002-08-09 2007-10-24 株式会社神戸製鋼所 電磁波シールド用Ａｇ合金膜、電磁波シールド用Ａｇ合金膜形成体および電磁波シールド用Ａｇ合金膜の形成用のＡｇ合金スパッタリングターゲット
JP2004131747A (ja) * 2002-10-08 2004-04-30 Sumitomo Metal Mining Co Ltd 表示デバイス用銀合金及びこの銀合金を用いて形成した電極膜または反射膜を使用する表示デバイス
JP3993530B2 (ja) 2003-05-16 2007-10-17 株式会社神戸製鋼所 Ａｇ−Ｂｉ系合金スパッタリングターゲットおよびその製造方法
DE10327336A1 (de) * 2003-06-16 2005-01-27 W. C. Heraeus Gmbh & Co. Kg Legierung und deren Verwendung
JP2005048231A (ja) 2003-07-28 2005-02-24 Ishifuku Metal Ind Co Ltd スパッタリングターゲット材
JP4320000B2 (ja) 2004-04-21 2009-08-26 株式会社神戸製鋼所 光情報記録媒体用半透過反射膜と反射膜、および光情報記録媒体ならびにスパッタリングターゲット
TWI325134B (en) 2004-04-21 2010-05-21 Kobe Steel Ltd Semi-reflective film and reflective film for optical information recording medium, optical information recording medium, and sputtering target
JP2006001271A (ja) * 2004-05-17 2006-01-05 Kobe Steel Ltd Ａｇ系２層膜および透明導電体
US20060093511A1 (en) * 2004-11-03 2006-05-04 Jhewn-Kuang Chen Reflective alloy film
JP4418777B2 (ja) 2005-06-10 2010-02-24 石福金属興業株式会社 Ａｇ基合金からなるスパッタリングターゲット材および薄膜
JP4773145B2 (ja) * 2005-06-30 2011-09-14 アルバック成膜株式会社 増反射膜付きＡｇ又はＡｇ合金反射電極膜及びその製造方法
JP4527624B2 (ja) * 2005-07-22 2010-08-18 株式会社神戸製鋼所 Ａｇ合金反射膜を有する光情報媒体
JP2007035104A (ja) 2005-07-22 2007-02-08 Kobe Steel Ltd 光情報記録媒体用Ａｇ合金反射膜、光情報記録媒体および光情報記録媒体用Ａｇ合金反射膜の形成用のＡｇ合金スパッタリングターゲット
JP4377861B2 (ja) * 2005-07-22 2009-12-02 株式会社神戸製鋼所 光情報記録媒体用Ａｇ合金反射膜、光情報記録媒体および光情報記録媒体用Ａｇ合金反射膜の形成用のＡｇ合金スパッタリングターゲット
KR100667081B1 (ko) * 2005-11-02 2007-01-11 삼성에스디아이 주식회사 유기전계발광표시장치 및 그의 제조방법
JP5059512B2 (ja) 2007-02-28 2012-10-24 株式会社神戸製鋼所 高強度、高延性Ａｌ合金およびその製造方法
US8399100B2 (en) 2007-09-25 2013-03-19 Kobe Steel, Ltd. Reflection film, reflection film laminate, LED, organic EL display, and organic EL illuminating instrument
JP2010225572A (ja) 2008-11-10 2010-10-07 Kobe Steel Ltd 有機ｅｌディスプレイ用の反射アノード電極および配線膜
JP5830908B2 (ja) * 2011-04-06 2015-12-09 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP5806653B2 (ja) * 2011-12-27 2015-11-10 株式会社神戸製鋼所 反射電極用Ａｇ合金膜、反射電極、およびＡｇ合金スパッタリングターゲット

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004126497A (ja) 2002-08-08 2004-04-22 Kobe Steel Ltd 光反射膜およびこれを用いた液晶表示素子、ならびに光反射膜用スパッタリングターゲット
JP2005100604A (ja) * 2003-08-20 2005-04-14 Mitsubishi Materials Corp 光記録媒体の反射膜および反射膜形成用銀合金スパッタリングターゲット
JP2010225586A (ja) 2008-11-10 2010-10-07 Kobe Steel Ltd 有機ｅｌディスプレイ用の反射アノード電極および配線膜

Also Published As

Publication number Publication date
JP2015028211A (ja) 2015-02-12
JP6208629B2 (ja) 2017-10-04
US9947429B2 (en) 2018-04-17
CN105324510A (zh) 2016-02-10
KR20160013102A (ko) 2016-02-03
TW201514325A (zh) 2015-04-16
WO2014208341A1 (ja) 2014-12-31
US20160104549A1 (en) 2016-04-14
US20170330643A1 (en) 2017-11-16
CN105324510B (zh) 2018-12-14
TWI527912B (zh) 2016-04-01

Similar Documents

Publication Publication Date Title
KR101745290B1 (ko) 반사 전극용 Ag 합금막 및 반사 전극
KR20160013102A (ko) 반사 전극용 또는 배선 전극용 Ag 합금막, 반사 전극 또는 배선 전극, 및 Ag 합금 스퍼터링 타겟
JP4888119B2 (ja) 透明導電膜及びその製造方法、並びに透明導電性基材、発光デバイス
JP4961786B2 (ja) 透明導電膜、およびこれを用いた透明導電性フィルム
US20120199866A1 (en) Reflective anode electrode for organic el display
KR20140107666A (ko) 반사막 및/또는 투과막, 혹은 전기 배선 및/또는 전극에 사용되는 Ag 합금막, 및 Ag 합금 스퍼터링 타깃 및 Ag 합금 필러
JP5023745B2 (ja) 透明導電膜、この透明導電膜を用いた透明導電性基板、透明導電性フィルム、並びに近赤外線遮断フィルター、および、この透明導電膜の製造方法
US20160224151A1 (en) Electrode to be used in input device and method for producing same
JP2004277780A (ja) 銀系合金の積層構造並びにそれを用いた電極、配線、反射膜及び反射電極
KR101917609B1 (ko) 광 추출 전극을 가진 유기 발광 다이오드
JP2006001271A (ja) Ａｇ系２層膜および透明導電体
JP6375658B2 (ja) 積層膜
JPH11262968A (ja) 透明導電膜
JP2013209724A (ja) Ａｇ合金膜及びその形成方法
JP2007007982A (ja) 増反射膜付きＡｇ又はＡｇ合金反射電極膜及びその製造方法
JP2015061931A (ja) Ａｇ合金膜、Ａｇ合金導電膜、Ａｇ合金反射膜、Ａｇ合金半透過膜およびＡｇ合金膜形成用スパッタリングターゲット
CN114630919A (zh) 层叠结构体
JP5805708B2 (ja) タッチパネルセンサー用配線膜、およびタッチパネルセンサー
TW201524265A (zh) 有機電致發光用反射電極膜、層積反射電極膜、及反射電極膜形成用濺鍍靶
JP2020037253A (ja) 積層体およびターゲット材
WO2014038560A1 (ja) 有機ＥＬ素子、有機ＥＬ素子の反射電極の製造方法、および有機ＥＬ素子の反射電極形成用Ａｌ合金スパッタリングターゲット

Legal Events

Date Code Title Description
A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20220727

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20220727

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000