KR101444912B1 - 쇼트키 다이오드 스위치 및 이를 포함하는 메모리 유닛들 - Google Patents

쇼트키 다이오드 스위치 및 이를 포함하는 메모리 유닛들 Download PDF

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KR101444912B1
KR101444912B1 KR1020137019955A KR20137019955A KR101444912B1 KR 101444912 B1 KR101444912 B1 KR 101444912B1 KR 1020137019955 A KR1020137019955 A KR 1020137019955A KR 20137019955 A KR20137019955 A KR 20137019955A KR 101444912 B1 KR101444912 B1 KR 101444912B1
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semiconductor layer
rti
laminate structure
insulating layer
forming
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KR20130099224A (ko
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영 김
아민 누룰
세티아디 다디
바이트야나탄 베누고팔란
티안 웨이
인식 진
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시게이트 테크놀로지 엘엘씨
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/051—Manufacture or treatment of Schottky diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
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    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
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    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/10—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having two electrodes, e.g. diodes or MIM elements
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    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/221—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only diodes
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR1020137019955A 2009-07-13 2010-07-09 쇼트키 다이오드 스위치 및 이를 포함하는 메모리 유닛들 Expired - Fee Related KR101444912B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/502,221 US8158964B2 (en) 2009-07-13 2009-07-13 Schottky diode switch and memory units containing the same
US12/502,221 2009-07-13
PCT/US2010/041539 WO2011008650A1 (en) 2009-07-13 2010-07-09 Schottky diode switch and memory units containing the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020127003805A Division KR101368313B1 (ko) 2009-07-13 2010-07-09 쇼트키 다이오드 스위치 및 이를 포함하는 메모리 유닛들

Publications (2)

Publication Number Publication Date
KR20130099224A KR20130099224A (ko) 2013-09-05
KR101444912B1 true KR101444912B1 (ko) 2014-09-26

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KR1020137019955A Expired - Fee Related KR101444912B1 (ko) 2009-07-13 2010-07-09 쇼트키 다이오드 스위치 및 이를 포함하는 메모리 유닛들
KR1020137019964A Expired - Fee Related KR101412190B1 (ko) 2009-07-13 2010-07-09 쇼트키 다이오드 스위치 및 이를 포함하는 메모리 유닛들
KR1020127003805A Expired - Fee Related KR101368313B1 (ko) 2009-07-13 2010-07-09 쇼트키 다이오드 스위치 및 이를 포함하는 메모리 유닛들

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KR1020137019964A Expired - Fee Related KR101412190B1 (ko) 2009-07-13 2010-07-09 쇼트키 다이오드 스위치 및 이를 포함하는 메모리 유닛들
KR1020127003805A Expired - Fee Related KR101368313B1 (ko) 2009-07-13 2010-07-09 쇼트키 다이오드 스위치 및 이를 포함하는 메모리 유닛들

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US (3) US8158964B2 (enExample)
JP (1) JP5702381B2 (enExample)
KR (3) KR101444912B1 (enExample)
CN (1) CN102473706B (enExample)
WO (1) WO2011008650A1 (enExample)

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CN106413944B (zh) * 2014-01-24 2019-06-14 近藤胜义 固溶有氮的钛粉末材料、钛材以及固溶有氮的钛粉末材料的制备方法
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KR101959378B1 (ko) * 2016-08-26 2019-03-19 한국과학기술연구원 3족-5족 화합물 반도체 소자 제조 방법 및 그 반도체 소자
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KR102226206B1 (ko) * 2020-02-06 2021-03-11 포항공과대학교 산학협력단 이중 pn 접합을 포함하는 메모리 소자 및 그 구동방법
KR102358352B1 (ko) * 2020-06-23 2022-02-03 국민대학교산학협력단 멤리스터 소자의 모델링 방법 및 장치
FR3117258B1 (fr) * 2020-12-07 2023-12-22 Commissariat Energie Atomique Dispositif selecteur, dispositif memoire de type resistif et procede de fabrication associe
WO2024137722A2 (en) * 2022-12-19 2024-06-27 Peiching Ling Semiconductor structures and memory devices and methods for manufacturing the same

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US8198181B1 (en) 2012-06-12
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US20110006276A1 (en) 2011-01-13
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