KR101406524B1 - 플라즈마 생성용 전극 및 플라즈마 처리 장치 - Google Patents

플라즈마 생성용 전극 및 플라즈마 처리 장치 Download PDF

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Publication number
KR101406524B1
KR101406524B1 KR1020120048347A KR20120048347A KR101406524B1 KR 101406524 B1 KR101406524 B1 KR 101406524B1 KR 1020120048347 A KR1020120048347 A KR 1020120048347A KR 20120048347 A KR20120048347 A KR 20120048347A KR 101406524 B1 KR101406524 B1 KR 101406524B1
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South Korea
Prior art keywords
plasma
electrode
ceramic sprayed
gas discharge
substrate
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KR1020120048347A
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Korean (ko)
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KR20120126018A (ko
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마사토 미나미
요시히코 사사키
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도쿄엘렉트론가부시키가이샤
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Publication of KR20120126018A publication Critical patent/KR20120126018A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T50/00—Aeronautics or air transport
    • Y02T50/60—Efficient propulsion technologies, e.g. for aircraft

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
KR1020120048347A 2011-05-10 2012-05-08 플라즈마 생성용 전극 및 플라즈마 처리 장치 KR101406524B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-105406 2011-05-10
JP2011105406A JP5782293B2 (ja) 2011-05-10 2011-05-10 プラズマ生成用電極およびプラズマ処理装置

Publications (2)

Publication Number Publication Date
KR20120126018A KR20120126018A (ko) 2012-11-20
KR101406524B1 true KR101406524B1 (ko) 2014-06-12

Family

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KR1020120048347A KR101406524B1 (ko) 2011-05-10 2012-05-08 플라즈마 생성용 전극 및 플라즈마 처리 장치

Country Status (4)

Country Link
JP (1) JP5782293B2 (ja)
KR (1) KR101406524B1 (ja)
CN (1) CN102779715B (ja)
TW (1) TWI559357B (ja)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102038649B1 (ko) * 2012-02-20 2019-10-30 도쿄엘렉트론가부시키가이샤 전원 시스템, 플라즈마 에칭 장치 및 플라즈마 에칭 방법
JP2014157944A (ja) * 2013-02-15 2014-08-28 Toshiba Corp ガス供給部材及びプラズマ処理装置
CN103219213A (zh) * 2013-04-19 2013-07-24 上海申和热磁电子有限公司 用于蚀刻设备的上部电极
CN104869740B (zh) * 2015-05-20 2017-11-28 中国科学院电工研究所 一种电容式等离子体电极的上电极
CN106340434B (zh) * 2015-07-10 2018-12-14 东京毅力科创株式会社 等离子体处理装置和喷淋头
KR101909453B1 (ko) 2016-07-05 2018-10-18 에이비엠 주식회사 상부 전극 및 이를 구비한 공정챔버 및 공정챔버에 의해 제조되는 기판
JP6785101B2 (ja) * 2016-09-09 2020-11-18 東京エレクトロン株式会社 プラズマエッチング方法
CN108022821B (zh) * 2016-10-28 2020-07-03 中微半导体设备(上海)股份有限公司 等离子体处理装置及气体通道的耐腐蚀防护方法
JP6984126B2 (ja) * 2016-12-27 2021-12-17 東京エレクトロン株式会社 ガス供給装置、プラズマ処理装置及びガス供給装置の製造方法
CN108668467A (zh) * 2017-03-31 2018-10-16 可能可特科技（深圳）有限公司 一种用于fpc电镀的等离子装置
US10755900B2 (en) * 2017-05-10 2020-08-25 Applied Materials, Inc. Multi-layer plasma erosion protection for chamber components
CN109427527B (zh) * 2017-08-24 2021-02-26 中微半导体设备(上海)股份有限公司 一种等离子体刻蚀设备及用于该设备的喷头
CN108322987A (zh) * 2018-04-08 2018-07-24 合肥诺为智能科技有限公司 一种电极密闭式等离子体发生装置
JP7097758B2 (ja) * 2018-06-21 2022-07-08 東京エレクトロン株式会社 シャワーヘッドおよびプラズマ処理装置
JP7126431B2 (ja) * 2018-11-30 2022-08-26 東京エレクトロン株式会社 シャワーヘッドおよびガス処理装置
JP7159074B2 (ja) * 2019-02-08 2022-10-24 キオクシア株式会社 ガス供給部材、プラズマ処理装置、及びコーティング膜の形成方法
CN110784195A (zh) * 2019-09-10 2020-02-11 西安交通大学 一种重频高功率气体开关
US11749507B2 (en) * 2021-04-21 2023-09-05 Toto Ltd. Semiconductor manufacturing apparatus member and semiconductor manufacturing apparatus
CN113436956B (zh) * 2021-08-26 2022-02-25 湖北灿睿光电科技有限公司 电极、干蚀刻设备和制造电极的方法
JP2024054628A (ja) * 2022-10-05 2024-04-17 日本発條株式会社 積層構造体および積層構造体の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1050663A (ja) * 1996-07-29 1998-02-20 Sumitomo Metal Ind Ltd 電極の製造方法およびこの電極を備えるプラズマ処理装置
KR20070077048A (ko) * 2006-01-20 2007-07-25 동경 엘렉트론 주식회사 플라즈마 발생용 전극 및 플라즈마처리장치
KR20080000112A (ko) * 2006-06-26 2008-01-02 삼성전자주식회사 건식식각장치의 상부전극 및 그를 구비한 건식식각장치
JP2010183090A (ja) 2010-03-11 2010-08-19 Panasonic Corp プラズマ処理装置およびプラズマ処理装置用の電極部材

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JP3228644B2 (ja) * 1993-11-05 2001-11-12 東京エレクトロン株式会社 真空処理装置用素材及びその製造方法
JP3195535B2 (ja) * 1996-04-12 2001-08-06 株式会社東京カソード研究所 プラズマエッチング用電極及びプラズマエッチング装置
JP4602532B2 (ja) * 2000-11-10 2010-12-22 東京エレクトロン株式会社 プラズマ処理装置
US20030000924A1 (en) * 2001-06-29 2003-01-02 Tokyo Electron Limited Apparatus and method of gas injection sequencing
JP3850277B2 (ja) * 2001-12-03 2006-11-29 東芝セラミックス株式会社 耐プラズマ性部材の製造方法
JP2004006581A (ja) * 2002-04-17 2004-01-08 Shin Etsu Chem Co Ltd プラズマ処理用シャワープレート及びその製造方法
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
JP4150266B2 (ja) * 2003-01-27 2008-09-17 信越化学工業株式会社 プラズマ処理用シャワープレート及びその製造方法
JP4181069B2 (ja) * 2004-02-27 2008-11-12 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2006165093A (ja) * 2004-12-03 2006-06-22 Tokyo Electron Ltd プラズマ処理装置
JP2006128281A (ja) * 2004-10-27 2006-05-18 Mitsubishi Materials Corp プラズマエッチング用耐エッチング膜被覆シリコン電極板
JP2008192838A (ja) * 2007-02-05 2008-08-21 Tokyo Electron Ltd エッチング装置、エッチング方法、および電子装置の製造方法
KR101101910B1 (ko) * 2009-06-03 2012-01-02 한국과학기술연구원 반도체 제조 장비용 다성분계 열용사 코팅물질, 그 제조방법 및 코팅방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1050663A (ja) * 1996-07-29 1998-02-20 Sumitomo Metal Ind Ltd 電極の製造方法およびこの電極を備えるプラズマ処理装置
KR20070077048A (ko) * 2006-01-20 2007-07-25 동경 엘렉트론 주식회사 플라즈마 발생용 전극 및 플라즈마처리장치
KR20080000112A (ko) * 2006-06-26 2008-01-02 삼성전자주식회사 건식식각장치의 상부전극 및 그를 구비한 건식식각장치
JP2010183090A (ja) 2010-03-11 2010-08-19 Panasonic Corp プラズマ処理装置およびプラズマ処理装置用の電極部材

Also Published As

Publication number Publication date
KR20120126018A (ko) 2012-11-20
JP5782293B2 (ja) 2015-09-24
CN102779715B (zh) 2015-09-16
CN102779715A (zh) 2012-11-14
TWI559357B (zh) 2016-11-21
TW201303955A (zh) 2013-01-16
JP2012238656A (ja) 2012-12-06

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