TWI559357B - Electrode generation electrode and plasma processing device - Google Patents
Electrode generation electrode and plasma processing device Download PDFInfo
- Publication number
- TWI559357B TWI559357B TW101116517A TW101116517A TWI559357B TW I559357 B TWI559357 B TW I559357B TW 101116517 A TW101116517 A TW 101116517A TW 101116517 A TW101116517 A TW 101116517A TW I559357 B TWI559357 B TW I559357B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- plasma
- film
- substrate
- gas discharge
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims description 72
- 239000000919 ceramic Substances 0.000 claims description 87
- 239000000758 substrate Substances 0.000 claims description 59
- 239000007921 spray Substances 0.000 claims description 44
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 10
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- 230000007246 mechanism Effects 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 3
- 239000010407 anodic oxide Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- XASAPYQVQBKMIN-UHFFFAOYSA-K ytterbium(iii) fluoride Chemical compound F[Yb](F)F XASAPYQVQBKMIN-UHFFFAOYSA-K 0.000 claims 1
- 239000011521 glass Substances 0.000 description 22
- 238000000034 method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 238000005260 corrosion Methods 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 6
- 229940105963 yttrium fluoride Drugs 0.000 description 6
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 238000007743 anodising Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T50/00—Aeronautics or air transport
- Y02T50/60—Efficient propulsion technologies, e.g. for aircraft
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Coating By Spraying Or Casting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011105406A JP5782293B2 (ja) | 2011-05-10 | 2011-05-10 | プラズマ生成用電極およびプラズマ処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201303955A TW201303955A (zh) | 2013-01-16 |
| TWI559357B true TWI559357B (zh) | 2016-11-21 |
Family
ID=47124587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101116517A TWI559357B (zh) | 2011-05-10 | 2012-05-09 | Electrode generation electrode and plasma processing device |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5782293B2 (ja) |
| KR (1) | KR101406524B1 (ja) |
| CN (1) | CN102779715B (ja) |
| TW (1) | TWI559357B (ja) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102038649B1 (ko) * | 2012-02-20 | 2019-10-30 | 도쿄엘렉트론가부시키가이샤 | 전원 시스템, 플라즈마 에칭 장치 및 플라즈마 에칭 방법 |
| JP2014157944A (ja) * | 2013-02-15 | 2014-08-28 | Toshiba Corp | ガス供給部材及びプラズマ処理装置 |
| CN103219213A (zh) * | 2013-04-19 | 2013-07-24 | 上海申和热磁电子有限公司 | 用于蚀刻设备的上部电极 |
| CN104869740B (zh) * | 2015-05-20 | 2017-11-28 | 中国科学院电工研究所 | 一种电容式等离子体电极的上电极 |
| CN106340434B (zh) * | 2015-07-10 | 2018-12-14 | 东京毅力科创株式会社 | 等离子体处理装置和喷淋头 |
| KR101909453B1 (ko) | 2016-07-05 | 2018-10-18 | 에이비엠 주식회사 | 상부 전극 및 이를 구비한 공정챔버 및 공정챔버에 의해 제조되는 기판 |
| JP6785101B2 (ja) * | 2016-09-09 | 2020-11-18 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
| CN108022821B (zh) * | 2016-10-28 | 2020-07-03 | 中微半导体设备(上海)股份有限公司 | 等离子体处理装置及气体通道的耐腐蚀防护方法 |
| JP6984126B2 (ja) * | 2016-12-27 | 2021-12-17 | 東京エレクトロン株式会社 | ガス供給装置、プラズマ処理装置及びガス供給装置の製造方法 |
| CN108668467A (zh) * | 2017-03-31 | 2018-10-16 | 可能可特科技（深圳）有限公司 | 一种用于fpc电镀的等离子装置 |
| US10755900B2 (en) * | 2017-05-10 | 2020-08-25 | Applied Materials, Inc. | Multi-layer plasma erosion protection for chamber components |
| CN109427527B (zh) * | 2017-08-24 | 2021-02-26 | 中微半导体设备(上海)股份有限公司 | 一种等离子体刻蚀设备及用于该设备的喷头 |
| CN108322987A (zh) * | 2018-04-08 | 2018-07-24 | 合肥诺为智能科技有限公司 | 一种电极密闭式等离子体发生装置 |
| JP7097758B2 (ja) * | 2018-06-21 | 2022-07-08 | 東京エレクトロン株式会社 | シャワーヘッドおよびプラズマ処理装置 |
| JP7126431B2 (ja) * | 2018-11-30 | 2022-08-26 | 東京エレクトロン株式会社 | シャワーヘッドおよびガス処理装置 |
| JP7159074B2 (ja) * | 2019-02-08 | 2022-10-24 | キオクシア株式会社 | ガス供給部材、プラズマ処理装置、及びコーティング膜の形成方法 |
| CN110784195A (zh) * | 2019-09-10 | 2020-02-11 | 西安交通大学 | 一种重频高功率气体开关 |
| US11749507B2 (en) * | 2021-04-21 | 2023-09-05 | Toto Ltd. | Semiconductor manufacturing apparatus member and semiconductor manufacturing apparatus |
| CN113436956B (zh) * | 2021-08-26 | 2022-02-25 | 湖北灿睿光电科技有限公司 | 电极、干蚀刻设备和制造电极的方法 |
| JP2024054628A (ja) * | 2022-10-05 | 2024-04-17 | 日本発條株式会社 | 積層構造体および積層構造体の製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1461494A (zh) * | 2000-11-10 | 2003-12-10 | 东京毅力科创株式会社 | 等离子体处理装置及排气环 |
| JP2004228500A (ja) * | 2003-01-27 | 2004-08-12 | Shin Etsu Chem Co Ltd | プラズマ処理用シャワープレート及びその製造方法 |
| CN1682342A (zh) * | 2002-09-30 | 2005-10-12 | 东京毅力科创株式会社 | 等离子加工系统中带有沉积罩的上电极板 |
| TW200849376A (en) * | 2007-02-05 | 2008-12-16 | Tokyo Electron Ltd | Etching apparatus, etching method, and method for production of electronic device |
| TW201043592A (en) * | 2009-06-03 | 2010-12-16 | Korea Inst Sci & Tech | Multi-component thermal spray coating material for semiconductor processing equipment, and manufacturing and coating method thereof |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3228644B2 (ja) * | 1993-11-05 | 2001-11-12 | 東京エレクトロン株式会社 | 真空処理装置用素材及びその製造方法 |
| JP3195535B2 (ja) * | 1996-04-12 | 2001-08-06 | 株式会社東京カソード研究所 | プラズマエッチング用電極及びプラズマエッチング装置 |
| JP3559920B2 (ja) * | 1996-07-29 | 2004-09-02 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US20030000924A1 (en) * | 2001-06-29 | 2003-01-02 | Tokyo Electron Limited | Apparatus and method of gas injection sequencing |
| JP3850277B2 (ja) * | 2001-12-03 | 2006-11-29 | 東芝セラミックス株式会社 | 耐プラズマ性部材の製造方法 |
| JP2004006581A (ja) * | 2002-04-17 | 2004-01-08 | Shin Etsu Chem Co Ltd | プラズマ処理用シャワープレート及びその製造方法 |
| JP4181069B2 (ja) * | 2004-02-27 | 2008-11-12 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP2006165093A (ja) * | 2004-12-03 | 2006-06-22 | Tokyo Electron Ltd | プラズマ処理装置 |
| JP2006128281A (ja) * | 2004-10-27 | 2006-05-18 | Mitsubishi Materials Corp | プラズマエッチング用耐エッチング膜被覆シリコン電極板 |
| JP5082246B2 (ja) * | 2006-01-20 | 2012-11-28 | 東京エレクトロン株式会社 | プラズマ発生用の電極、プラズマ処理装置及びプラズマ発生用の電極の製造方法 |
| KR20080000112A (ko) * | 2006-06-26 | 2008-01-02 | 삼성전자주식회사 | 건식식각장치의 상부전극 및 그를 구비한 건식식각장치 |
| JP2010183090A (ja) | 2010-03-11 | 2010-08-19 | Panasonic Corp | プラズマ処理装置およびプラズマ処理装置用の電極部材 |
-
2011
- 2011-05-10 JP JP2011105406A patent/JP5782293B2/ja active Active
-
2012
- 2012-05-08 KR KR1020120048347A patent/KR101406524B1/ko active IP Right Grant
- 2012-05-08 CN CN201210141209.0A patent/CN102779715B/zh active Active
- 2012-05-09 TW TW101116517A patent/TWI559357B/zh active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1461494A (zh) * | 2000-11-10 | 2003-12-10 | 东京毅力科创株式会社 | 等离子体处理装置及排气环 |
| CN1682342A (zh) * | 2002-09-30 | 2005-10-12 | 东京毅力科创株式会社 | 等离子加工系统中带有沉积罩的上电极板 |
| JP2004228500A (ja) * | 2003-01-27 | 2004-08-12 | Shin Etsu Chem Co Ltd | プラズマ処理用シャワープレート及びその製造方法 |
| TW200849376A (en) * | 2007-02-05 | 2008-12-16 | Tokyo Electron Ltd | Etching apparatus, etching method, and method for production of electronic device |
| TW201043592A (en) * | 2009-06-03 | 2010-12-16 | Korea Inst Sci & Tech | Multi-component thermal spray coating material for semiconductor processing equipment, and manufacturing and coating method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20120126018A (ko) | 2012-11-20 |
| JP5782293B2 (ja) | 2015-09-24 |
| CN102779715B (zh) | 2015-09-16 |
| KR101406524B1 (ko) | 2014-06-12 |
| CN102779715A (zh) | 2012-11-14 |
| TW201303955A (zh) | 2013-01-16 |
| JP2012238656A (ja) | 2012-12-06 |
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