KR101258998B1 - 유전체 자기 조성물 및 전자 부품 - Google Patents
유전체 자기 조성물 및 전자 부품 Download PDFInfo
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- KR101258998B1 KR101258998B1 KR1020100110264A KR20100110264A KR101258998B1 KR 101258998 B1 KR101258998 B1 KR 101258998B1 KR 1020100110264 A KR1020100110264 A KR 1020100110264A KR 20100110264 A KR20100110264 A KR 20100110264A KR 101258998 B1 KR101258998 B1 KR 101258998B1
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- dielectric
- barium titanate
- ceramic composition
- dielectric layer
- electronic component
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- 239000000203 mixture Substances 0.000 title claims abstract description 54
- 239000000919 ceramic Substances 0.000 title claims abstract description 39
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 93
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 92
- 239000002245 particle Substances 0.000 claims abstract description 50
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000013078 crystal Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 15
- 239000003990 capacitor Substances 0.000 abstract description 34
- 238000009413 insulation Methods 0.000 abstract description 23
- 230000007423 decrease Effects 0.000 abstract description 6
- 230000005476 size effect Effects 0.000 abstract description 6
- 229910052788 barium Inorganic materials 0.000 abstract description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 abstract description 4
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 37
- 239000002994 raw material Substances 0.000 description 30
- 238000002441 X-ray diffraction Methods 0.000 description 20
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- 239000011258 core-shell material Substances 0.000 description 19
- 230000008859 change Effects 0.000 description 18
- 238000005259 measurement Methods 0.000 description 18
- 239000003985 ceramic capacitor Substances 0.000 description 17
- 229910052760 oxygen Inorganic materials 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 238000006467 substitution reaction Methods 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 230000009466 transformation Effects 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229910052692 Dysprosium Inorganic materials 0.000 description 5
- 229910052688 Gadolinium Inorganic materials 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052741 iridium Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 229910052727 yttrium Inorganic materials 0.000 description 5
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 4
- 229910052689 Holmium Inorganic materials 0.000 description 4
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- 229910052769 Ytterbium Inorganic materials 0.000 description 4
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- 239000002075 main ingredient Substances 0.000 description 4
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- 239000000956 alloy Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052746 lanthanum Inorganic materials 0.000 description 3
- 238000004438 BET method Methods 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 229910002651 NO3 Inorganic materials 0.000 description 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 2
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 2
- 229910007472 ZnO—B2O3—SiO2 Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
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- 229910052802 copper Inorganic materials 0.000 description 2
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- 229920001249 ethyl cellulose Polymers 0.000 description 2
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- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
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- 238000002156 mixing Methods 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
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- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
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- 238000005245 sintering Methods 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
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- 238000011156 evaluation Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
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- 229910044991 metal oxide Inorganic materials 0.000 description 1
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- 229910052762 osmium Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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JP2009255512 | 2009-11-06 | ||
JPJP-P-2009-255512 | 2009-11-06 | ||
JP2010222704A JP5548924B2 (ja) | 2009-11-06 | 2010-09-30 | 誘電体磁器組成物および電子部品 |
JPJP-P-2010-222704 | 2010-09-30 |
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JP (1) | JP5548924B2 (zh) |
KR (1) | KR101258998B1 (zh) |
CN (1) | CN102070334A (zh) |
DE (1) | DE102010050554B4 (zh) |
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JP5803694B2 (ja) * | 2012-01-24 | 2015-11-04 | Tdk株式会社 | 誘電体磁器組成物およびセラミック電子部品 |
DE102012104033A1 (de) * | 2012-05-08 | 2013-11-14 | Epcos Ag | Keramischer Vielschichtkondensator |
US10501327B2 (en) * | 2012-06-01 | 2019-12-10 | Pavlo Rudenko | Nanostructures with functionally different surfaces |
CN103578764B (zh) * | 2013-11-01 | 2016-08-17 | 广州创天电子科技有限公司 | 一种提高陶瓷电容器q值的方法 |
KR101922876B1 (ko) | 2016-11-09 | 2018-11-28 | 삼성전기 주식회사 | 유전체 조성물 및 이를 포함하는 적층 세라믹 커패시터 |
CN107739205A (zh) * | 2017-11-13 | 2018-02-27 | 湖南先导电子陶瓷科技产业园发展有限公司 | 一种钛酸钡核‑锶锆钙壳结构的陶瓷介质材料及其制备方法 |
KR102666093B1 (ko) * | 2018-08-09 | 2024-05-16 | 삼성전기주식회사 | 적층 세라믹 커패시터 |
JP7239926B2 (ja) * | 2019-08-30 | 2023-03-15 | 住友金属鉱山株式会社 | 粒子の観察方法 |
CN114424306A (zh) * | 2019-09-26 | 2022-04-29 | 京瓷株式会社 | 电容器 |
JP7363701B2 (ja) | 2020-07-27 | 2023-10-18 | Tdk株式会社 | 誘電体組成物および積層セラミック電子部品 |
CN116813355B (zh) * | 2023-06-27 | 2024-04-19 | 南充三环电子有限公司 | 一种陶瓷介质材料及其制备方法和应用 |
Citations (1)
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US3028248A (en) * | 1958-11-28 | 1962-04-03 | Nat Res Dev | Dielectric ceramic compositions and the method of production thereof |
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DE4334454A1 (de) * | 1993-10-09 | 1995-04-13 | Philips Patentverwaltung | Substituierter Barium-Neodyn-Titan-Perowskit Dielektrische, keramische Zusammensetzung, Kondensator und Mikrowellenkomponente |
JP3487539B2 (ja) * | 1997-05-06 | 2004-01-19 | 太陽誘電株式会社 | 誘電体磁器 |
JP3941871B2 (ja) * | 2003-08-01 | 2007-07-04 | 独立行政法人 宇宙航空研究開発機構 | 無容器凝固法によるバリウムチタン酸化物セラミックス材料の製造方法 |
JP4013226B2 (ja) * | 2004-01-29 | 2007-11-28 | 独立行政法人 宇宙航空研究開発機構 | 無容器凝固法によるバリウムチタン酸化物単結晶材料片の製造方法 |
WO2006035535A1 (ja) * | 2004-09-28 | 2006-04-06 | Murata Manufacturing Co., Ltd | 誘電体セラミック、誘電体セラミックの製造方法、及び積層セラミックコンデンサ |
JP4701364B2 (ja) * | 2004-11-15 | 2011-06-15 | 独立行政法人 日本原子力研究開発機構 | 誘電体磁器の評価方法 |
JP4407497B2 (ja) * | 2004-11-30 | 2010-02-03 | Tdk株式会社 | 誘電体磁器組成物及び電子部品 |
CN101346784B (zh) * | 2005-12-26 | 2011-08-03 | 京瓷株式会社 | 层叠陶瓷电容器 |
WO2008118422A1 (en) * | 2007-03-26 | 2008-10-02 | The Trustees Of Columbia University In The City Of New York | Metal oxide nanocrystals: preparation and uses |
JP4949220B2 (ja) * | 2007-12-25 | 2012-06-06 | 京セラ株式会社 | 誘電体磁器および積層セラミックコンデンサ |
WO2009136443A1 (ja) * | 2008-05-09 | 2009-11-12 | 独立行政法人宇宙航空研究開発機構 | 誘電体磁器組成物 |
JP5883217B2 (ja) * | 2009-11-06 | 2016-03-09 | Tdk株式会社 | 六方晶系チタン酸バリウム粉末、その製造方法、誘電体磁器組成物および電子部品 |
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3028248A (en) * | 1958-11-28 | 1962-04-03 | Nat Res Dev | Dielectric ceramic compositions and the method of production thereof |
Non-Patent Citations (2)
Title |
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Pro.Phys.Soc. Vol.76, pp.763-771 (1960) * |
Pro.Phys.Soc. Vol.76, pp.763-771 (1960)* |
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DE102010050554B4 (de) | 2018-02-08 |
JP5548924B2 (ja) | 2014-07-16 |
KR20110050389A (ko) | 2011-05-13 |
US20110111947A1 (en) | 2011-05-12 |
DE102010050554A1 (de) | 2011-08-04 |
JP2011116628A (ja) | 2011-06-16 |
CN102070334A (zh) | 2011-05-25 |
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