KR100800231B1 - 전자 부품 - Google Patents
전자 부품 Download PDFInfo
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- KR100800231B1 KR100800231B1 KR1020060029609A KR20060029609A KR100800231B1 KR 100800231 B1 KR100800231 B1 KR 100800231B1 KR 1020060029609 A KR1020060029609 A KR 1020060029609A KR 20060029609 A KR20060029609 A KR 20060029609A KR 100800231 B1 KR100800231 B1 KR 100800231B1
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- 239000002245 particle Substances 0.000 claims abstract description 116
- 239000003985 ceramic capacitor Substances 0.000 claims abstract description 46
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 32
- JXDXDSKXFRTAPA-UHFFFAOYSA-N calcium;barium(2+);oxygen(2-);titanium(4+) Chemical compound [O-2].[Ca+2].[Ti+4].[Ba+2] JXDXDSKXFRTAPA-UHFFFAOYSA-N 0.000 claims abstract description 27
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- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 24
- 239000000395 magnesium oxide Substances 0.000 claims description 15
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 claims description 12
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 claims description 6
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- 229910000423 chromium oxide Inorganic materials 0.000 claims description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 6
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 6
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 6
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 6
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Abstract
Description
Claims (22)
- 티탄산바륨을 주성분으로 하는 유전체층과, 상기 유전체층의 양면에 전극층을 갖는 전자 부품으로서,상기 유전체층을 형성하는 복수의 세라믹 입자 중 인접하는 세라믹 입자 간에 존재하는 결정 입계의 두께가 1nm 이하인 입자의 비율이 전체의 30% 이상 95% 이하인 전자 부품.
- 티탄산바륨을 주성분으로 하는 유전체층과, 상기 유전체층의 양면에 전극층을 갖는 전자 부품으로서,상기 유전체층을 형성하는 복수의 세라믹 입자 중 인접하는 세라믹 입자 간에 존재하는 결정 입계의 두께가 0.75nm 이하인 입자의 비율이 전체의 40% 이상 90% 이하인 전자 부품.
- 청구항 1 또는 청구항 2에 있어서, 상기 유전체층의 두께가 3㎛ 이하인 전자 부품.
- 청구항 1 또는 청구항 2에 있어서, 상기 세라믹 입자의 평균 입자 직경이 0.3㎛ 이하인 전자 부품.
- 청구항 1 또는 청구항 2에 있어서, 상기 유전체층에는, 마그네슘 산화물이 부성분으로서 포함되고, 티탄산바륨을 100몰에 대해, 마그네슘 산화물은 0∼2몰(단 0을 제외)로 포함되는 전자 부품.
- 청구항 1 또는 청구항 2에 있어서, 상기 유전체층에는, 망간 산화물 및 크롬 산화물의 일방 또는 쌍방이 부성분으로서 포함되고, 티탄산바륨을 100몰에 대해, 망간 산화물과 크롬 산화물의 합계는, MnO와 Cr2O3로 환산하여 0∼0.5몰(단 0을 제외)로 포함되는 전자 부품.
- 청구항 1 또는 청구항 2에 있어서, 상기 유전체층에는, 희토류 산화물이 부성분으로서 포함되고, 티탄산바륨을 100몰에 대해, 희토류 산화물은 0∼4몰(단 0 및 4를 제외)로 포함되는 전자 부품.
- 청구항 1 또는 청구항 2에 있어서, 상기 유전체층에는, 바나듐 산화물, 텅스텐 산화물, 탄탈 산화물 및 니오브 산화물에서 선택되는 1종 또는 2종 이상이 부성분으로서 포함되고, 티탄산바륨을 100몰에 대해, 바나듐 산화물, 텅스텐 산화물, 탄탈 산화물 및 니오브 산화물의 합계가 0∼0.5몰(단 0을 제외)로 포함되는 전자 부품.
- 청구항 1 또는 청구항 2에 있어서, 상기 유전체층에는 유리 성분이 포함되고, 티탄산바륨을 100몰에 대해, 유리 성분은 0.5∼12몰로 포함되는 전자 부품.
- 청구항 1 또는 청구항 2에 있어서, 상기 전자 부품은, 상기 유전체층과 내부 전극층이 교대로 적층되어 있는 소자 본체를 가지는 적층 세라믹 콘덴서인 것을 특징으로 하는 전자 부품.
- 청구항 10에 있어서, 상기 내부 전극층이 비금속을 95 중량% 이상 포함하는 것을 특징으로 하는 전자 부품.
- Ba1-xCaxTiO3(0.001≤x≤0.15)로 표시되는 티탄산바륨칼슘을 주성분으로 하는 유전체층과, 상기 유전체층의 양면에 전극층을 갖는 전자 부품으로서,상기 유전체층을 형성하는 복수의 세라믹 입자 중 인접하는 세라믹 입자 간에 존재하는 결정 입계의 두께가 1nm 이하인 입자의 비율이 전체의 20% 이상 70% 이하인 전자 부품.
- Ba1-xCaxTiO3(0.001≤x≤0.15)로 표시되는 티탄산바륨칼슘을 주성분으로 하는 유전체층과, 상기 유전체층의 양면에 전극층을 갖는 전자 부품으로서,상기 유전체층을 형성하는 복수의 세라믹 입자 중 인접하는 세라믹 입자 간에 존재하는 결정 입계의 두께가 0.75nm 이하인 입자의 비율이 전체의 25% 이상 65% 이하인 전자 부품.
- 청구항 12 또는 청구항 13에 있어서, 상기 유전체층의 두께가 3㎛ 이하인 전 자 부품.
- 청구항 12 또는 청구항 13에 있어서, 상기 세라믹 입자의 평균 입자 직경이 0.3㎛ 이하인 전자 부품.
- 청구항 12 또는 청구항 13에 있어서, 상기 유전체층에는, 마그네슘 산화물이 부성분으로서 포함되고, 티탄산바륨칼슘을 lOO몰에 대해, 마그네슘 산화물은 0∼2몰(단 0을 제외)로 포함되는 전자 부품.
- 청구항 12 또는 청구항 13에 있어서, 상기 유전체층에는, 망간 산화물 및 크롬 산화물의 일방 또는 쌍방이 부성분으로서 포함되고, 티탄산바륨칼슘을 100몰에 대해, 망간 산화물과 크롬 산화물의 합계는, MnO와 Cr2O3로 환산하여 0∼0.5몰(단 0을 제외)로 포함되는 전자 부품.
- 청구항 12 또는 청구항 13에 있어서, 상기 유전체층에는 희토류 산화물이 부성분으로서 포함되고, 티탄산바륨칼슘을 100몰에 대해, 희토류 산화물은 0∼4몰(단 0 및 4를 제외)로 포함되는 전자 부품.
- 청구항 12 또는 청구항 13에 있어서, 상기 유전체층에는, 바나듐 산화물, 텅스텐 산화물, 탄탈 산화물 및 니오브 산화물에서 선택되는 1종 또는 2종 이상이 부성분으로서 포함되고, 티탄산바륨칼슘을 100몰에 대해, 바나듐 산화물, 텅스텐 산화물, 탄탈 산화물 및 니오브 산화물의 합계가 0∼0.5몰(단 0을 제외)로 포함되는 전자 부품.
- 청구항 12 또는 청구항 13에 있어서, 상기 유전체층에는 유리 성분이 포함되고, 티탄산바륨칼슘을 100몰에 대해, 유리 성분은 0.5∼12몰로 포함되는 전자 부품.
- 청구항 12 또는 청구항 13에 있어서, 상기 전자 부품은, 상기 유전체층과 내부 전극층이 교대로 적층되어 있는 소자 본체를 가지는 적층 세라믹 콘덴서인 것을 특징으로 하는 전자 부품.
- 청구항 21에 있어서, 상기 내부 전극층이 비금속을 95 중량% 이상 포함하는 것을 특징으로 하는 전자 부품.
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US20090143216A1 (en) * | 2007-12-03 | 2009-06-04 | General Electric Company | Composition and method |
JP5217997B2 (ja) * | 2008-10-20 | 2013-06-19 | Tdk株式会社 | 圧電磁器、振動子及び超音波モータ |
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US8263515B2 (en) * | 2009-08-29 | 2012-09-11 | Fatih Dogan | Nanostructured dielectric materials for high energy density multi layer ceramic capacitors |
JP2011086903A (ja) * | 2009-09-15 | 2011-04-28 | Seiko Epson Corp | 液体噴射ヘッド、液体噴射装置及び圧電素子 |
US8181134B2 (en) | 2009-10-16 | 2012-05-15 | International Business Machines Corporation | Techniques for performing conditional sequential equivalence checking of an integrated circuit logic design |
JP2012129508A (ja) | 2010-11-22 | 2012-07-05 | Tdk Corp | 積層型セラミック電子部品 |
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US9410505B2 (en) | 2013-03-28 | 2016-08-09 | General Electric Company | Method for local boiling protection of a heat exchanger |
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US10957485B2 (en) | 2018-03-06 | 2021-03-23 | Taiyo Yuden Co., Ltd. | Multilayer ceramic capacitor and ceramic material powder |
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