JP5278682B2 - 誘電体磁器組成物および電子部品 - Google Patents
誘電体磁器組成物および電子部品 Download PDFInfo
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Description
組成式(SrxBa1−x)mTiO3で表され、前記組成式中のxが、0.159≦x≦0.238、前記組成式中のmが、0.997≦m≦1.011である関係を満足する化合物を含む主成分と、
副成分として、
CaTiO3と、
Fe、Co、Ni、CuおよびZnからなる群から選ばれる少なくとも1つの酸化物と、
A元素(Acceptor)の酸化物(ただし、AはMnおよびCrからなる群から選ばれる少なくとも1つ)と、
D元素(Donor)の酸化物(ただし、Dは、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、HoおよびYからなる群から選ばれる少なくとも1つ)と、を有し、
前記主成分100重量%に対して、
CaTiO3を11〜25重量%、
Fe、Co、Ni、CuおよびZnからなる群から選ばれる少なくとも1つの酸化物を、FeO3/2、CoO4/3、NiO、CuOおよびZnO換算で、0.10〜0.50重量%、
前記主成分100モル%に対して、
A元素の酸化物を、Mn元素およびCr元素換算で、0.590〜1.940モル%含有し、
前記D元素に対する前記A元素の比(A/D)が、モル比で、2.250〜7.450であることを特徴とする。
図1(A)、図1(B)に示すように、本実施形態に係るセラミックコンデンサ2は、誘電体層10と、その対向表面に形成された一対の端子電極12,14と、この端子電極12,14に、それぞれ接続されたリード端子6,8とを有する構成となっており、これらは保護樹脂4に覆われている。セラミックコンデンサ2の形状は、目的や用途に応じて適宜決定すればよいが、誘電体層10が円板形状となっている円板型のコンデンサであることが好ましい。また、そのサイズは、目的や用途に応じて適宜決定すればよいが、通常、直径が5〜20mm程度、好ましくは5〜15mm程度である。
誘電体層10は、本発明の誘電体磁器組成物を含有する。
本発明の誘電体磁器組成物は、鉛(Pb)およびビスマス(Bi)を実質的に含まず、組成式(SrxBa1−x)mTiO3で表される化合物を含む主成分と、副成分として、CaTiO3と、Fe、Co、Ni、CuおよびZnからなる群から選ばれる少なくとも1つの酸化物と、A元素の酸化物(ただし、AはMnおよびCrからなる群から選ばれる少なくとも1つ)と、D元素の酸化物(ただし、Dは、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、HoおよびYからなる群から選ばれる少なくとも1つ)と、を有する。
端子電極12,14は、導電材で構成される。端子電極12,14に用いられる導電材は、たとえば、Cu、Cu合金、Ag、Ag合金、In−Ga合金等を主成分として含む。また、端子電極12,14は、これらの金属または合金の単層構造でもあってもよく、複層構造であってもよい。
次に、本実施形態に係るセラミックコンデンサの製造方法について説明する。
まず、焼成後に図1に示す誘電体層10を形成することとなる誘電体磁器組成物粉末を製造する。
まず、主成分原料として、SrCO3 、BaCO3 およびTiO2を、それぞれ準備した。さらに副成分原料として、CaTiO3、A元素の酸化物または炭酸塩(MnCO3、Cr2O3)、CuO、Fe2O3、Co3O4、NiO、ZnO、D元素の酸化物(ただし、DはLa、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、HoおよびY)を準備した。なお、CaTiO3は、以下のようにして作製した。まず、CaCO3原料とTiO2原料とを湿式混合し、乾燥後の原料を空気中、1000℃、2時間の条件で仮焼を行った。仮焼後の原料をさらに湿式粉砕して、CaTiO3を得た。
比誘電率εは、コンデンサ試料に対し、基準温度25℃において、デジタルLCRメータ(YHP社製4274A)にて、周波数1kHz,入力信号レベル(測定電圧)1.0Vrmsの条件下で測定された静電容量から算出した(単位なし)。比誘電率は高いほうが好ましく、本実施例では、1800以上を良好とした。
誘電損失(tanδ)は、コンデンサ試料に対し、基準温度25℃において、デジタルLCRメータ(YHP社製4274A)にて、周波数1kHzおよび100kHz,入力信号レベル(測定電圧)1.0Vrmsの条件下で測定した。誘電損失は低いほうが好ましく、本実施例では、周波数1kHzでは0.6%以下、周波数100kHzでは0.5%以下を良好とした。
コンデンサ試料に対し、−25〜140℃の温度範囲で静電容量を測定し、+25℃での静電容量に対する−25℃および125℃での静電容量の変化率(単位は%)を算出した。本実施例では、容量変化率が+15%〜−30%の範囲にあるものを良好とした。なお、下記に示す表2においては、−25℃での容量変化率をΔC(−25)/Cと、125℃での容量変化率をΔC(125)/Cと表記する。
コンデンサ試料に対し500Vの直流電圧をかけ、絶縁抵抗を測定した。絶縁抵抗IR(単位はΩ)は大きいほうが好ましく、本実施例では、1×104MΩ以上を良好とした。
4… 保護樹脂
6,8… リード端子
10… 誘電体層
12,14… 端子電極
Claims (3)
- 組成式(SrxBa1−x)mTiO3で表され、前記組成式中のxが、0.159≦x≦0.238、前記組成式中のmが、0.997≦m≦1.011である関係を満足する化合物を含む主成分と、
副成分として、
CaTiO3と、
Fe、Co、Ni、CuおよびZnからなる群から選ばれる少なくとも1つの酸化物と、
A元素の酸化物(ただし、AはMnおよびCrからなる群から選ばれる少なくとも1つ)と、
D元素の酸化物(ただし、Dは、La、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、HoおよびYからなる群から選ばれる少なくとも1つ)と、を有し、
前記主成分100重量%に対して、
CaTiO3を11〜25重量%、
Fe、Co、Ni、CuおよびZnからなる群から選ばれる少なくとも1つの酸化物を、FeO3/2、CoO4/3、NiO、CuOおよびZnO換算で、0.10〜0.50重量%、
前記主成分100モル%に対して、
A元素の酸化物を、Mn元素およびCr元素換算で、0.590〜1.940モル%含有し、
前記D元素に対する前記A元素の比(A/D)が、モル比で、2.250〜7.450であることを特徴とする誘電体磁器組成物。 - 請求項1に記載の誘電体磁器組成物で構成してある誘電体層を有する電子部品。
- 請求項2に記載の電子部品を有する電源装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2009027506A JP5278682B2 (ja) | 2009-02-09 | 2009-02-09 | 誘電体磁器組成物および電子部品 |
US12/699,427 US8053385B2 (en) | 2009-02-09 | 2010-02-03 | Dielectric ceramic composition and electronic component |
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US8178458B2 (en) * | 2009-12-01 | 2012-05-15 | National Taiwan University Technology | Dielectric ceramic composition |
EP2426684A1 (en) | 2010-09-02 | 2012-03-07 | Mitsubishi Materials Corporation | Dielectric-thin-film forming composition, method of forming dielectric thin film, and dielectric thin film formed by the method |
CN102295457B (zh) * | 2011-01-17 | 2013-04-10 | 南京工业大学 | 一种低损耗的Sm2O3-TiO2系微波介质陶瓷及其制备方法 |
EP2608219B1 (en) * | 2011-12-20 | 2015-03-04 | Mitsubishi Materials Corporation | Dielectric thin film-forming composition, method of forming dielectric thin film and dielectric thin film formed by the method |
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JP6571048B2 (ja) | 2016-06-24 | 2019-09-04 | 太陽誘電株式会社 | 積層セラミックコンデンサ、セラミック粉末、およびそれらの製造方法 |
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CN109650878B (zh) * | 2019-01-10 | 2021-08-24 | 陕西科技大学 | 一种无铅宽频下巨介电低损耗高绝缘电阻陶瓷材料及其制备方法 |
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