JP6257802B2 - 誘電体組成物、誘電体素子、電子部品および積層電子部品 - Google Patents
誘電体組成物、誘電体素子、電子部品および積層電子部品 Download PDFInfo
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- JP6257802B2 JP6257802B2 JP2016564416A JP2016564416A JP6257802B2 JP 6257802 B2 JP6257802 B2 JP 6257802B2 JP 2016564416 A JP2016564416 A JP 2016564416A JP 2016564416 A JP2016564416 A JP 2016564416A JP 6257802 B2 JP6257802 B2 JP 6257802B2
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- 239000000203 mixture Substances 0.000 title claims description 69
- 239000010410 layer Substances 0.000 description 22
- 239000003990 capacitor Substances 0.000 description 14
- 239000003985 ceramic capacitor Substances 0.000 description 14
- 239000000843 powder Substances 0.000 description 14
- 239000011734 sodium Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000001354 calcination Methods 0.000 description 6
- 238000010304 firing Methods 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- BDAGIHXWWSANSR-NJFSPNSNSA-N hydroxyformaldehyde Chemical compound O[14CH]=O BDAGIHXWWSANSR-NJFSPNSNSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910000018 strontium carbonate Inorganic materials 0.000 description 2
- ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 229910001940 europium oxide Inorganic materials 0.000 description 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910001938 gadolinium oxide Inorganic materials 0.000 description 1
- 229940075613 gadolinium oxide Drugs 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 description 1
- OWCYYNSBGXMRQN-UHFFFAOYSA-N holmium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ho+3].[Ho+3] OWCYYNSBGXMRQN-UHFFFAOYSA-N 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 229910003451 terbium oxide Inorganic materials 0.000 description 1
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000012856 weighed raw material Substances 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
誘電体組成物を作製するため、出発原料として、酸化ビスマス(Bi2O3)、炭酸ナトリウム(Na2CO3)、炭酸ストロンチウム(SrCO3)、酸化亜鉛(ZnO)、酸化チタン(TiO2)の粉末を準備した。
2,3…電極
5…積層体
6A,6B…内部電極層
7…誘電体層
11A,11B…端子電極
100…セラミックコンデンサ
200…積層セラミックコンデンサ
Claims (5)
- 主成分が下記一般式(1)の組成を有する誘電体組成物であって、a、b、c、dは、それぞれ、0.09≦a≦0.58、0.09≦b≦0.42、0.05≦c≦0.84、0<d≦0.08および0.95≦a+b+c≦1.05を満たすことを特徴とする誘電体組成物。
(BiaNabSrc)(ZndTi1−d)O3…(1) - a、b、c、dは、それぞれ、0.27≦a≦0.48、0.18≦b≦0.38、0.20≦c≦0.60、0.02≦d≦0.05および0.95≦a+b+c≦1.05を満たす請求項1に記載の誘電体組成物。
- 請求項1または2に記載の誘電体組成物を備える誘電体素子。
- 請求項1または2に記載の誘電体組成物からなる誘電体層を備える電子部品。
- 請求項1または2に記載の誘電体組成物からなる誘電体層と内部電極層とを交互に積層されてなる積層部分を有する積層電子部品。
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Application Number | Priority Date | Filing Date | Title |
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JP2014008865 | 2014-01-21 | ||
JP2014008865A JP2015137193A (ja) | 2014-01-21 | 2014-01-21 | 誘電体磁器組成物、誘電体素子、電子部品および積層電子部品 |
PCT/EP2015/051126 WO2015110464A1 (en) | 2014-01-21 | 2015-01-21 | Dielectric composition, dielectric element, electronic component and laminated electronic component |
Publications (2)
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JP2017507894A JP2017507894A (ja) | 2017-03-23 |
JP6257802B2 true JP6257802B2 (ja) | 2018-01-10 |
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JP2016564416A Active JP6257802B2 (ja) | 2014-01-21 | 2015-01-21 | 誘電体組成物、誘電体素子、電子部品および積層電子部品 |
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WO2016189005A1 (en) * | 2015-05-27 | 2016-12-01 | Epcos Ag | Bismuth sodium strontium titanate-based dielectric composition, dielectric element, electronic component and laminated electronic component thereof |
KR102089701B1 (ko) * | 2015-10-21 | 2020-03-16 | 삼성전기주식회사 | 유전체 자기 조성물 및 이를 포함하는 적층 세라믹 커패시터 |
CN110098052B (zh) * | 2019-04-18 | 2021-07-02 | 太原科技大学 | 一种晶界层电容器的制作方法 |
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JP3158553B2 (ja) | 1991-09-20 | 2001-04-23 | 株式会社村田製作所 | 非還元性誘電体磁器組成物 |
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JP4387135B2 (ja) * | 2003-07-28 | 2009-12-16 | Tdk株式会社 | 圧電磁器 |
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US8076257B1 (en) * | 2008-04-23 | 2011-12-13 | MRA Laboratories, Inc | High temperature ceramic dielectric composition and capacitors made from the composition |
US8529785B2 (en) * | 2008-07-30 | 2013-09-10 | Canon Kabushiki Kaisha | Metal oxide |
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WO2012044313A1 (en) | 2010-09-30 | 2012-04-05 | Hewlett-Packard Development Company, L.P. | Lead-free piezoelectric materials with enhanced fatigue resistance |
EP2622661B1 (en) * | 2010-09-30 | 2014-12-10 | Hewlett-Packard Development Company, L.P. | Lead-free piezoelectric material based on bismuth zinc titanate-bismuth potassium titanate-bismuth sodium titanate |
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CN105916829A (zh) | 2016-08-31 |
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US20170029337A1 (en) | 2017-02-02 |
JP2017507894A (ja) | 2017-03-23 |
JP2015137193A (ja) | 2015-07-30 |
KR102268500B1 (ko) | 2021-06-23 |
US9776925B2 (en) | 2017-10-03 |
KR20160111404A (ko) | 2016-09-26 |
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