KR101257811B1 - 액정표시장치용 어레이 기판과 그 제조방법 - Google Patents

액정표시장치용 어레이 기판과 그 제조방법 Download PDF

Info

Publication number
KR101257811B1
KR101257811B1 KR1020060060901A KR20060060901A KR101257811B1 KR 101257811 B1 KR101257811 B1 KR 101257811B1 KR 1020060060901 A KR1020060060901 A KR 1020060060901A KR 20060060901 A KR20060060901 A KR 20060060901A KR 101257811 B1 KR101257811 B1 KR 101257811B1
Authority
KR
South Korea
Prior art keywords
layer
electrode
gate
metal layer
pad
Prior art date
Application number
KR1020060060901A
Other languages
English (en)
Korean (ko)
Other versions
KR20080002221A (ko
Inventor
정지현
김동영
Original Assignee
엘지디스플레이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지디스플레이 주식회사 filed Critical 엘지디스플레이 주식회사
Priority to KR1020060060901A priority Critical patent/KR101257811B1/ko
Priority to US11/808,978 priority patent/US7884362B2/en
Priority to DE102007029421A priority patent/DE102007029421B4/de
Priority to JP2007168247A priority patent/JP4849633B2/ja
Priority to TW096123284A priority patent/TWI368807B/zh
Priority to CNA2007101269091A priority patent/CN101097385A/zh
Publication of KR20080002221A publication Critical patent/KR20080002221A/ko
Priority to US12/984,009 priority patent/US7977175B2/en
Priority to JP2011164438A priority patent/JP5122672B2/ja
Application granted granted Critical
Publication of KR101257811B1 publication Critical patent/KR101257811B1/ko

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
KR1020060060901A 2006-06-30 2006-06-30 액정표시장치용 어레이 기판과 그 제조방법 KR101257811B1 (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1020060060901A KR101257811B1 (ko) 2006-06-30 2006-06-30 액정표시장치용 어레이 기판과 그 제조방법
US11/808,978 US7884362B2 (en) 2006-06-30 2007-06-14 Array substrate for liquid crystal display device and method of fabricating the same
DE102007029421A DE102007029421B4 (de) 2006-06-30 2007-06-26 Arraysubstrat für eine Flüssigkristallanzeigevorrichtung und Herstellungsverfahren
JP2007168247A JP4849633B2 (ja) 2006-06-30 2007-06-26 液晶表示装置用アレイ基板
TW096123284A TWI368807B (en) 2006-06-30 2007-06-27 Array substrate for liquid crystal display device and method of fabricating the same
CNA2007101269091A CN101097385A (zh) 2006-06-30 2007-06-29 液晶显示装置的阵列基板及其制造方法
US12/984,009 US7977175B2 (en) 2006-06-30 2011-01-04 Array substrate for liquid crystal display device and method of fabricating the same
JP2011164438A JP5122672B2 (ja) 2006-06-30 2011-07-27 液晶表示装置用アレイ基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060060901A KR101257811B1 (ko) 2006-06-30 2006-06-30 액정표시장치용 어레이 기판과 그 제조방법

Publications (2)

Publication Number Publication Date
KR20080002221A KR20080002221A (ko) 2008-01-04
KR101257811B1 true KR101257811B1 (ko) 2013-04-29

Family

ID=38777187

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060060901A KR101257811B1 (ko) 2006-06-30 2006-06-30 액정표시장치용 어레이 기판과 그 제조방법

Country Status (6)

Country Link
US (2) US7884362B2 (zh)
JP (2) JP4849633B2 (zh)
KR (1) KR101257811B1 (zh)
CN (1) CN101097385A (zh)
DE (1) DE102007029421B4 (zh)
TW (1) TWI368807B (zh)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW413844B (en) * 1998-11-26 2000-12-01 Samsung Electronics Co Ltd Manufacturing methods of thin film transistor array panels for liquid crystal displays and photolithography method of thin films
KR101284697B1 (ko) * 2006-06-30 2013-07-23 엘지디스플레이 주식회사 액정표시장치용 어레이 기판과 그 제조방법
KR100920483B1 (ko) * 2007-07-20 2009-10-08 엘지디스플레이 주식회사 액정표시장치용 어레이 기판 및 그 제조방법
KR101458898B1 (ko) * 2008-02-12 2014-11-07 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
US20120133860A1 (en) * 2009-08-04 2012-05-31 Sharp Kabushiki Kaisha Active matrix substrate, liquid crystal display panel, liquid crystal display device, and method for manufacturing active matrix substrate
US20120127396A1 (en) * 2009-08-04 2012-05-24 Sharp Kabushiki Kaisha Active matrix substrate, liquid crystal display panel, liquid crystal display device, and method for manufacturing active matrix substrate
KR101988341B1 (ko) 2009-09-04 2019-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
KR101574131B1 (ko) * 2009-11-10 2015-12-04 삼성디스플레이 주식회사 박막 트랜지스터 표시판의 제조 방법
KR102089200B1 (ko) 2009-11-28 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR101113354B1 (ko) 2010-04-16 2012-02-29 삼성모바일디스플레이주식회사 표시 장치 및 그 제조방법
CN102290413B (zh) * 2010-06-17 2013-04-10 北京京东方光电科技有限公司 阵列基板及其制造方法和液晶显示器
JP2012208294A (ja) * 2011-03-29 2012-10-25 Seiko Epson Corp 電気光学装置の製造方法、電気光学装置、投射型表示装置および電子機器
KR20130066247A (ko) * 2011-12-12 2013-06-20 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101258903B1 (ko) * 2012-02-24 2013-04-29 엘지디스플레이 주식회사 액정표시장치 및 액정표시장치 제조방법
CN102709329A (zh) * 2012-06-14 2012-10-03 深超光电（深圳）有限公司 薄膜晶体管及其制造方法
CN102890378B (zh) * 2012-09-17 2015-01-21 京东方科技集团股份有限公司 一种阵列基板及其制造方法
JP2015012048A (ja) 2013-06-27 2015-01-19 三菱電機株式会社 アクティブマトリクス基板およびその製造方法
CN103715096A (zh) 2013-12-27 2014-04-09 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板及其制作方法
DE102014102029A1 (de) * 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement
CN104183603B (zh) * 2014-07-16 2017-01-25 京东方科技集团股份有限公司 一种阵列基板及其制备方法、显示装置
CN105140300B (zh) * 2015-10-20 2019-01-18 重庆京东方光电科技有限公司 薄膜晶体管及其制作方法、阵列基板和显示装置
CN107402486B (zh) * 2017-08-31 2020-06-30 京东方科技集团股份有限公司 阵列基板及其驱动方法、显示装置
US11251261B2 (en) * 2019-05-17 2022-02-15 Micron Technology, Inc. Forming a barrier material on an electrode

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164584A (ja) * 1998-11-26 2000-06-16 Samsung Electronics Co Ltd 薄膜の写真エッチング方法及びこれを用いた液晶表示装置用薄膜トランジスタ基板の製造方法
JP2001326360A (ja) * 2000-05-18 2001-11-22 Sharp Corp アクティブマトリクス基板の製造方法およびアクティブマトリクス基板および薄膜電界効果トランジスタの製造方法
JP2002303877A (ja) * 2001-01-18 2002-10-18 Lg Phillips Lcd Co Ltd 液晶表示装置用アレー基板とその製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07239478A (ja) 1994-03-01 1995-09-12 Hitachi Ltd 半導体装置
JPH08262493A (ja) * 1995-03-27 1996-10-11 Toshiba Corp 液晶表示装置およびその製造方法
JP3425851B2 (ja) * 1997-06-30 2003-07-14 日本電気株式会社 液晶表示装置用薄膜トランジスタ
JP3288615B2 (ja) * 1997-10-21 2002-06-04 株式会社アドバンスト・ディスプレイ 薄膜トランジスタの製造方法
US6476481B2 (en) * 1998-05-05 2002-11-05 International Rectifier Corporation High current capacity semiconductor device package and lead frame with large area connection posts and modified outline
JP2000208771A (ja) * 1999-01-11 2000-07-28 Hitachi Ltd 半導体装置、液晶表示装置およびこれらの製造方法
TW498178B (en) * 2000-05-02 2002-08-11 Hannstar Display Corp Manufacturing method and structure for in-plane switching mode liquid crystal display unit
KR100799464B1 (ko) * 2001-03-21 2008-02-01 엘지.필립스 엘시디 주식회사 액정표시장치 및 그 제조방법
KR100483358B1 (ko) * 2001-09-07 2005-04-14 엘지.필립스 엘시디 주식회사 반사투과형 액정표시장치용 어레이기판과 그 제조방법
JP4551049B2 (ja) * 2002-03-19 2010-09-22 三菱電機株式会社 表示装置
CN1333432C (zh) 2003-08-21 2007-08-22 广辉电子股份有限公司 薄膜晶体管阵列基板的制造方法
KR101090252B1 (ko) * 2004-09-24 2011-12-06 삼성전자주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
US7338846B2 (en) * 2006-01-12 2008-03-04 Chunghwa Picture Tubes, Ltd. Fabricating method of pixel structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000164584A (ja) * 1998-11-26 2000-06-16 Samsung Electronics Co Ltd 薄膜の写真エッチング方法及びこれを用いた液晶表示装置用薄膜トランジスタ基板の製造方法
JP2001326360A (ja) * 2000-05-18 2001-11-22 Sharp Corp アクティブマトリクス基板の製造方法およびアクティブマトリクス基板および薄膜電界効果トランジスタの製造方法
JP2002303877A (ja) * 2001-01-18 2002-10-18 Lg Phillips Lcd Co Ltd 液晶表示装置用アレー基板とその製造方法

Also Published As

Publication number Publication date
DE102007029421A1 (de) 2008-01-03
JP5122672B2 (ja) 2013-01-16
JP2011227526A (ja) 2011-11-10
US7977175B2 (en) 2011-07-12
US20110097857A1 (en) 2011-04-28
DE102007029421B4 (de) 2010-05-12
KR20080002221A (ko) 2008-01-04
JP2008015514A (ja) 2008-01-24
US7884362B2 (en) 2011-02-08
CN101097385A (zh) 2008-01-02
JP4849633B2 (ja) 2012-01-11
US20080042134A1 (en) 2008-02-21
TWI368807B (en) 2012-07-21
TW200811568A (en) 2008-03-01

Similar Documents

Publication Publication Date Title
KR101257811B1 (ko) 액정표시장치용 어레이 기판과 그 제조방법
KR101235106B1 (ko) 액정표시장치용 어레이 기판과 그 제조방법
KR101282893B1 (ko) 액정표시장치용 어레이 기판과 그 제조방법
JP4668893B2 (ja) 液晶表示装置及びその製造方法
JP4885805B2 (ja) 液晶表示装置用アレイ基板とその製造方法
KR101264789B1 (ko) 횡전계 방식 액정표시장치용 어레이 기판과 그 제조방법
KR101248003B1 (ko) 액정표시장치용 어레이 기판과 그 제조방법
KR101127218B1 (ko) 액정표시장치용 어레이 기판과 그 제조방법
KR101284697B1 (ko) 액정표시장치용 어레이 기판과 그 제조방법
KR101297358B1 (ko) 액정표시장치용 어레이 기판과 그 제조방법
KR100920482B1 (ko) 액정표시장치용 어레이 기판과 그 제조방법
KR101242032B1 (ko) 액정표시장치용 어레이 기판과 그 제조방법
KR20080001180A (ko) 액정표시장치용 어레이 기판과 그 제조방법
KR101263725B1 (ko) 액정표시장치용 어레이 기판과 그 제조방법
KR101396809B1 (ko) 액정표시장치용 어레이 기판 및 그 제조방법
KR101124398B1 (ko) 액정표시자치용 어레이 기판과 그 제조방법
KR101302965B1 (ko) 횡전계 방식 액정표시장치용 어레이 기판과 그 제조방법
KR101210888B1 (ko) 액정표시장치용 어레이 기판의 제조방법
KR20060133746A (ko) 액정표시장치용 어레이 기판과 그 제조방법
KR20090055208A (ko) 씨오티 구조 액정표시장치용 어레이기판 및 그 제조방법
KR20060133745A (ko) 액정표시장치용 어레이 기판과 그 제조방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20160329

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20170320

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee