JP2011227526A - 液晶表示装置用アレイ基板の製造方法 - Google Patents
液晶表示装置用アレイ基板の製造方法 Download PDFInfo
- Publication number
- JP2011227526A JP2011227526A JP2011164438A JP2011164438A JP2011227526A JP 2011227526 A JP2011227526 A JP 2011227526A JP 2011164438 A JP2011164438 A JP 2011164438A JP 2011164438 A JP2011164438 A JP 2011164438A JP 2011227526 A JP2011227526 A JP 2011227526A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- forming
- material layer
- electrode
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 80
- 239000000758 substrate Substances 0.000 title claims abstract description 73
- 238000004519 manufacturing process Methods 0.000 title claims description 69
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 53
- 239000004020 conductor Substances 0.000 claims abstract description 27
- 238000000059 patterning Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 description 196
- 229910052751 metal Inorganic materials 0.000 description 71
- 239000002184 metal Substances 0.000 description 71
- 229910021417 amorphous silicon Inorganic materials 0.000 description 42
- 239000010408 film Substances 0.000 description 35
- 239000004065 semiconductor Substances 0.000 description 25
- 238000003860 storage Methods 0.000 description 24
- 239000010409 thin film Substances 0.000 description 19
- 230000000903 blocking effect Effects 0.000 description 14
- 239000012535 impurity Substances 0.000 description 14
- 239000011159 matrix material Substances 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- -1 aluminum Al Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
Abstract
【解決手段】基板上部にゲート電極とゲート配線を形成する段階と、第1絶縁膜を形成する段階と、アクティブ層を形成する段階と、オーミックコンタクト物質層を形成する段階と、窒化シリコン膜SiNxでなるバッファ層を形成する段階と、ゲート電極の周辺によって定義される境界部内にアクティブパターンとオーミックコンタクトパターンで構成されるアイランドを形成する段階と、アイランド上部に透明導電物質層及び不透明導電物質層を形成する段階と、ソース電極及びドレイン電極を形成する段階と、ソース電極及びドレイン電極の下部のアクティブ層パターンの両端に別々に隣接したオーミックコンタクト層を形成する段階と、基板の上部に第2絶縁膜を形成する段階と、第2絶縁膜とドレイン電極の不透明導電物質層をパターニングして画素電極を形成する段階とを含む。
【選択図】図7
Description
後述する工程は、5マスク工程を例に挙げて説明している。
第1マスク工程:ゲート電極とゲート配線(及びゲートパッド)を形成する工程。
第2マスク工程:ゲート電極の上部のアクティブ層及びオーミックコンタクト層を形成する工程。
第3マスク工程:データ配線(及びデータパッド)、ソース電極及びドレイン電極を形成する工程。
第4マスク工程:基板全面に保護層を形成して、前記ドレイン電極を露出するコンタクトホールを形成する工程。
第5マスク工程:前記コンタクトホールを通じて接触する画素電極を形成する工程。
以上のような5マスク工程で液晶表示装置用アレイ基板を製造することができる。
本発明は、アクティブ層(非晶質シリコン層)のゲート電極の内側の上部にアイランド状で構成され、データ配線とソース電極及びドレイン電極の外部に非晶質シリコン層が露出されない構造のアレイ基板を新しい4マスク工程で製造することを特徴とする。
第1マスク工程:ゲート電極102とゲート配線104及びゲートパッド142を形成する。
第2マスク工程:ゲート電極102と、ゲート電極の上部に、第1絶縁膜108とアクティブ層122とオーミックコンタクトパターン124とバッファパターン126を形成して、第1絶縁膜の下部に前記ゲートパッド106を露出する。
第3マスク工程:透明金属層128と不透明な金属層130で積層されたソース電極136とドレイン電極138と画素パターン139と、前記ゲートパッド106と接触するゲートパッド電極パターン141と、前記データ配線146及びデータパッドパターン147を形成して、露出されたバッファパターン126aとオーミックコンタクトパターン124aを除去してバッファ層126とオーミックコンタクト層124を形成する。
第4マスク工程:第2絶縁膜150を形成した後、前記画素パターン139とゲートパッド電極パターン141とデータパッドパターン147の不透明金属層130を除去して、下部の透明金属層128のみで構成された画素電極140、ゲートパッド電極142、データパッド148を形成する。
以上の工程によって本発明による液晶表示装置用アレイ基板を製造することができる。
Claims (7)
- 基板の上部にゲート電極と、前記ゲート電極に連結されるゲート配線を形成する段階と、
前記ゲート電極及びゲート配線の上部に第1絶縁膜を形成する段階と、
前記第1絶縁膜の上部にアクティブ層を形成する段階と、
前記アクティブ層の上部にオーミックコンタクト物質層を形成する段階と、
前記オーミックコンタクト物質層上部に窒化シリコン膜SiNxでなるバッファ層を形成する段階と、
前記アクティブ層及びオーミックコンタクト物質層をパターニングして、前記ゲート電極の上部の前記ゲート電極の周辺によって定義される境界部内にアクティブパターンとオーミックコンタクトパターンで構成されるアイランドを形成する段階と、
前記アイランドの上部に、透明導電物質層及び不透明導電物質層を形成する段階と、
前記透明導電物質層及び不透明導電物質層をパターニングして、ソース電極及びドレイン電極を形成する段階と、
前記オーミックコンタクトパターンをパターニングして、前記ソース電極及びドレイン電極の下部の前記アクティブ層パターンの両端に別々に隣接したオーミックコンタクト層を形成する段階と、
前記基板の上部に第2絶縁膜を形成する段階と、
前記第2絶縁膜と前記ドレイン電極の不透明導電物質層をパターニングして画素電極を形成する段階とを含むことを特徴とする液晶表示装置用アレイ基板の製造方法。 - 前記バッファ層を形成する段階は、前記オーミックコンタクト物質層をプラズマ処理する段階を含むことを特徴とする請求項1に記載の液晶表示装置用アレイ基板の製造方法。
- 前記アクティブ層と前記オーミックコンタクト物質層をパターニングする段階は、前記バッファ層を前記ゲート電極の上部の前記ゲート電極の周辺によって定義される境界部内の前記アイランドの一部にパターニングする段階を含むことを特徴とする請求項1に記載の液晶表示装置用アレイ基板の製造方法。
- 前記アイランドの上部に、前記透明導電物質層及び不透明導電物質層を形成する段階は、前記アクティブパターンと接触する少なくとも一つの透明導電層を提供する段階をさらに含むことを特徴とする請求項1に記載の液晶表示装置用アレイ基板の製造方法。
- 前記アイランドの上部に、前記透明導電物質層及び不透明導電物質層を形成する段階は、前記オーミックコンタクト層と接触する少なくとも一つの透明導電層を提供する段階をさらに含むことを特徴とする請求項1に記載の液晶表示装置用アレイ基板の製造方法。
- 前記基板の上部に、前記ゲート電極と前記ゲート配線を形成する段階は、前記ゲート配線の一端にゲートパッドを提供する段階を含み、前記アイランドの上部に、前記透明導電物質層及び不透明導電物質層を形成する段階は、前記ゲートパッドの上部に、前記透明導電物質層及び不透明導電物質層を提供する段階を含むことを特徴とする請求項1に記載の液晶表示装置用アレイ基板の製造方法。
- 前記透明導電物質層及び不透明導電物質層をパターニングする段階は、前記ドレイン電極から延長される画素パターンと、前記ソース電極から延長されるデータ配線を形成する段階を含むことを特徴とする請求項1に記載の液晶表示装置用アレイ基板の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060060901A KR101257811B1 (ko) | 2006-06-30 | 2006-06-30 | 액정표시장치용 어레이 기판과 그 제조방법 |
KR10-2006-0060901 | 2006-06-30 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007168247A Division JP4849633B2 (ja) | 2006-06-30 | 2007-06-26 | 液晶表示装置用アレイ基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011227526A true JP2011227526A (ja) | 2011-11-10 |
JP5122672B2 JP5122672B2 (ja) | 2013-01-16 |
Family
ID=38777187
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007168247A Expired - Fee Related JP4849633B2 (ja) | 2006-06-30 | 2007-06-26 | 液晶表示装置用アレイ基板 |
JP2011164438A Expired - Fee Related JP5122672B2 (ja) | 2006-06-30 | 2011-07-27 | 液晶表示装置用アレイ基板の製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007168247A Expired - Fee Related JP4849633B2 (ja) | 2006-06-30 | 2007-06-26 | 液晶表示装置用アレイ基板 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7884362B2 (ja) |
JP (2) | JP4849633B2 (ja) |
KR (1) | KR101257811B1 (ja) |
CN (1) | CN101097385A (ja) |
DE (1) | DE102007029421B4 (ja) |
TW (1) | TWI368807B (ja) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW413844B (en) * | 1998-11-26 | 2000-12-01 | Samsung Electronics Co Ltd | Manufacturing methods of thin film transistor array panels for liquid crystal displays and photolithography method of thin films |
KR101284697B1 (ko) * | 2006-06-30 | 2013-07-23 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판과 그 제조방법 |
KR100920483B1 (ko) | 2007-07-20 | 2009-10-08 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 그 제조방법 |
KR101458898B1 (ko) * | 2008-02-12 | 2014-11-07 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
US20120133860A1 (en) * | 2009-08-04 | 2012-05-31 | Sharp Kabushiki Kaisha | Active matrix substrate, liquid crystal display panel, liquid crystal display device, and method for manufacturing active matrix substrate |
WO2011016286A1 (ja) * | 2009-08-04 | 2011-02-10 | シャープ株式会社 | アクティブマトリックス基板、液晶表示パネル、液晶表示装置およびアクティブマトリックス基板の製造方法 |
KR101707433B1 (ko) | 2009-09-04 | 2017-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 제작하기 위한 방법 |
KR101574131B1 (ko) * | 2009-11-10 | 2015-12-04 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
KR101895080B1 (ko) | 2009-11-28 | 2018-10-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
KR101113354B1 (ko) | 2010-04-16 | 2012-02-29 | 삼성모바일디스플레이주식회사 | 표시 장치 및 그 제조방법 |
CN102290413B (zh) * | 2010-06-17 | 2013-04-10 | 北京京东方光电科技有限公司 | 阵列基板及其制造方法和液晶显示器 |
JP2012208294A (ja) * | 2011-03-29 | 2012-10-25 | Seiko Epson Corp | 電気光学装置の製造方法、電気光学装置、投射型表示装置および電子機器 |
KR20130066247A (ko) * | 2011-12-12 | 2013-06-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101258903B1 (ko) * | 2012-02-24 | 2013-04-29 | 엘지디스플레이 주식회사 | 액정표시장치 및 액정표시장치 제조방법 |
CN102709329A (zh) * | 2012-06-14 | 2012-10-03 | 深超光电(深圳)有限公司 | 薄膜晶体管及其制造方法 |
CN102890378B (zh) * | 2012-09-17 | 2015-01-21 | 京东方科技集团股份有限公司 | 一种阵列基板及其制造方法 |
JP2015012048A (ja) * | 2013-06-27 | 2015-01-19 | 三菱電機株式会社 | アクティブマトリクス基板およびその製造方法 |
CN103715096A (zh) | 2013-12-27 | 2014-04-09 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、阵列基板及其制作方法 |
DE102014102029A1 (de) * | 2014-02-18 | 2015-08-20 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement |
CN104183603B (zh) * | 2014-07-16 | 2017-01-25 | 京东方科技集团股份有限公司 | 一种阵列基板及其制备方法、显示装置 |
CN105140300B (zh) * | 2015-10-20 | 2019-01-18 | 重庆京东方光电科技有限公司 | 薄膜晶体管及其制作方法、阵列基板和显示装置 |
CN107402486B (zh) * | 2017-08-31 | 2020-06-30 | 京东方科技集团股份有限公司 | 阵列基板及其驱动方法、显示装置 |
US11251261B2 (en) * | 2019-05-17 | 2022-02-15 | Micron Technology, Inc. | Forming a barrier material on an electrode |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07239478A (ja) * | 1994-03-01 | 1995-09-12 | Hitachi Ltd | 半導体装置 |
JPH08262493A (ja) * | 1995-03-27 | 1996-10-11 | Toshiba Corp | 液晶表示装置およびその製造方法 |
JP2001326360A (ja) * | 2000-05-18 | 2001-11-22 | Sharp Corp | アクティブマトリクス基板の製造方法およびアクティブマトリクス基板および薄膜電界効果トランジスタの製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3425851B2 (ja) * | 1997-06-30 | 2003-07-14 | 日本電気株式会社 | 液晶表示装置用薄膜トランジスタ |
JP3288615B2 (ja) * | 1997-10-21 | 2002-06-04 | 株式会社アドバンスト・ディスプレイ | 薄膜トランジスタの製造方法 |
US6476481B2 (en) | 1998-05-05 | 2002-11-05 | International Rectifier Corporation | High current capacity semiconductor device package and lead frame with large area connection posts and modified outline |
TW413844B (en) * | 1998-11-26 | 2000-12-01 | Samsung Electronics Co Ltd | Manufacturing methods of thin film transistor array panels for liquid crystal displays and photolithography method of thin films |
JP2000208771A (ja) | 1999-01-11 | 2000-07-28 | Hitachi Ltd | 半導体装置、液晶表示装置およびこれらの製造方法 |
TW498178B (en) * | 2000-05-02 | 2002-08-11 | Hannstar Display Corp | Manufacturing method and structure for in-plane switching mode liquid crystal display unit |
KR100750872B1 (ko) * | 2001-01-18 | 2007-08-22 | 엘지.필립스 엘시디 주식회사 | 액정표장치용 어레이기판과 그 제조방법 |
KR100799464B1 (ko) * | 2001-03-21 | 2008-02-01 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법 |
KR100483358B1 (ko) * | 2001-09-07 | 2005-04-14 | 엘지.필립스 엘시디 주식회사 | 반사투과형 액정표시장치용 어레이기판과 그 제조방법 |
JP4551049B2 (ja) * | 2002-03-19 | 2010-09-22 | 三菱電機株式会社 | 表示装置 |
CN1333432C (zh) | 2003-08-21 | 2007-08-22 | 广辉电子股份有限公司 | 薄膜晶体管阵列基板的制造方法 |
KR101090252B1 (ko) | 2004-09-24 | 2011-12-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그의 제조 방법 |
US7338846B2 (en) * | 2006-01-12 | 2008-03-04 | Chunghwa Picture Tubes, Ltd. | Fabricating method of pixel structure |
-
2006
- 2006-06-30 KR KR1020060060901A patent/KR101257811B1/ko not_active IP Right Cessation
-
2007
- 2007-06-14 US US11/808,978 patent/US7884362B2/en not_active Expired - Fee Related
- 2007-06-26 DE DE102007029421A patent/DE102007029421B4/de not_active Expired - Fee Related
- 2007-06-26 JP JP2007168247A patent/JP4849633B2/ja not_active Expired - Fee Related
- 2007-06-27 TW TW096123284A patent/TWI368807B/zh not_active IP Right Cessation
- 2007-06-29 CN CNA2007101269091A patent/CN101097385A/zh active Pending
-
2011
- 2011-01-04 US US12/984,009 patent/US7977175B2/en not_active Expired - Fee Related
- 2011-07-27 JP JP2011164438A patent/JP5122672B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07239478A (ja) * | 1994-03-01 | 1995-09-12 | Hitachi Ltd | 半導体装置 |
JPH08262493A (ja) * | 1995-03-27 | 1996-10-11 | Toshiba Corp | 液晶表示装置およびその製造方法 |
JP2001326360A (ja) * | 2000-05-18 | 2001-11-22 | Sharp Corp | アクティブマトリクス基板の製造方法およびアクティブマトリクス基板および薄膜電界効果トランジスタの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200811568A (en) | 2008-03-01 |
DE102007029421B4 (de) | 2010-05-12 |
TWI368807B (en) | 2012-07-21 |
KR20080002221A (ko) | 2008-01-04 |
JP2008015514A (ja) | 2008-01-24 |
US7884362B2 (en) | 2011-02-08 |
KR101257811B1 (ko) | 2013-04-29 |
US20110097857A1 (en) | 2011-04-28 |
JP4849633B2 (ja) | 2012-01-11 |
CN101097385A (zh) | 2008-01-02 |
DE102007029421A1 (de) | 2008-01-03 |
US20080042134A1 (en) | 2008-02-21 |
JP5122672B2 (ja) | 2013-01-16 |
US7977175B2 (en) | 2011-07-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5122672B2 (ja) | 液晶表示装置用アレイ基板の製造方法 | |
JP4908330B2 (ja) | 液晶表示装置用アレイ基板の製造方法 | |
JP4668893B2 (ja) | 液晶表示装置及びその製造方法 | |
JP4885805B2 (ja) | 液晶表示装置用アレイ基板とその製造方法 | |
JP4925057B2 (ja) | 横電界型の液晶表示装置用アレイ基板及びその製造方法 | |
US7692193B2 (en) | Array substrate for liquid crystal display device and method of fabricating the same | |
JP5235029B2 (ja) | 液晶表示装置及びその製造方法 | |
JP4567589B2 (ja) | 液晶表示装置用アレイ基板及びその製造方法 | |
US8198111B2 (en) | Array substrate for liquid crystal display device and method of manufacturing the same | |
US7847289B2 (en) | Array substrate for liquid crystal display device and method of manufacturing the same | |
US8243222B2 (en) | Array substrate for liquid crystal display device and method of manufacturing the same | |
KR20080001180A (ko) | 액정표시장치용 어레이 기판과 그 제조방법 | |
KR101210888B1 (ko) | 액정표시장치용 어레이 기판의 제조방법 | |
KR20060133746A (ko) | 액정표시장치용 어레이 기판과 그 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110826 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121023 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121024 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151102 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |