KR101133767B1 - 유기 박막 트랜지스터 표시판 및 그 제조 방법 - Google Patents

유기 박막 트랜지스터 표시판 및 그 제조 방법 Download PDF

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Publication number
KR101133767B1
KR101133767B1 KR1020050019616A KR20050019616A KR101133767B1 KR 101133767 B1 KR101133767 B1 KR 101133767B1 KR 1020050019616 A KR1020050019616 A KR 1020050019616A KR 20050019616 A KR20050019616 A KR 20050019616A KR 101133767 B1 KR101133767 B1 KR 101133767B1
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South Korea
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forming
organic semiconductor
thin film
electrode
film transistor
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Expired - Lifetime
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KR1020050019616A
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English (en)
Korean (ko)
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KR20060098982A (ko
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김보성
이용욱
홍문표
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삼성전자주식회사
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Priority to KR1020050019616A priority Critical patent/KR101133767B1/ko
Priority to TW095101891A priority patent/TWI377675B/zh
Priority to CN2006100064901A priority patent/CN1832191B/zh
Priority to EP06110157.2A priority patent/EP1701387B1/en
Priority to JP2006046483A priority patent/JP2006253674A/ja
Priority to US11/368,249 priority patent/US7838872B2/en
Publication of KR20060098982A publication Critical patent/KR20060098982A/ko
Priority to US12/911,621 priority patent/US8039296B2/en
Application granted granted Critical
Publication of KR101133767B1 publication Critical patent/KR101133767B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/474—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/125—Active-matrix OLED [AMOLED] displays including organic TFTs [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020050019616A 2005-03-09 2005-03-09 유기 박막 트랜지스터 표시판 및 그 제조 방법 Expired - Lifetime KR101133767B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020050019616A KR101133767B1 (ko) 2005-03-09 2005-03-09 유기 박막 트랜지스터 표시판 및 그 제조 방법
TW095101891A TWI377675B (en) 2005-03-09 2006-01-18 Organic thin film transistor array panel and manufacturing method thereof
CN2006100064901A CN1832191B (zh) 2005-03-09 2006-02-06 薄膜晶体管、有机薄膜晶体管阵列板及其制作方法
EP06110157.2A EP1701387B1 (en) 2005-03-09 2006-02-20 Organic thin film transistor array panel and manufacturing method thereof
JP2006046483A JP2006253674A (ja) 2005-03-09 2006-02-23 有機薄膜トランジスタ表示板及びその製造方法
US11/368,249 US7838872B2 (en) 2005-03-09 2006-03-03 Organic thin film transistor array panel
US12/911,621 US8039296B2 (en) 2005-03-09 2010-10-25 Organic thin film transistor array panel and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050019616A KR101133767B1 (ko) 2005-03-09 2005-03-09 유기 박막 트랜지스터 표시판 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20060098982A KR20060098982A (ko) 2006-09-19
KR101133767B1 true KR101133767B1 (ko) 2012-04-09

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Country Status (6)

Country Link
US (2) US7838872B2 (enExample)
EP (1) EP1701387B1 (enExample)
JP (1) JP2006253674A (enExample)
KR (1) KR101133767B1 (enExample)
CN (1) CN1832191B (enExample)
TW (1) TWI377675B (enExample)

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CN100359686C (zh) * 2004-11-30 2008-01-02 万代半导体元件（上海）有限公司 金属氧化物半导体场效应晶体管和肖特基二极管结合的瘦小外形封装
KR101197059B1 (ko) * 2006-07-11 2012-11-06 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
US20080128685A1 (en) * 2006-09-26 2008-06-05 Hiroyuki Honda Organic semiconductor device, manufacturing method of same, organic transistor array, and display
JP5181586B2 (ja) * 2006-09-26 2013-04-10 大日本印刷株式会社 有機半導体素子、有機半導体素子の製造方法、有機トランジスタアレイ、およびディスプレイ
KR101363714B1 (ko) * 2006-12-11 2014-02-14 엘지디스플레이 주식회사 유기 박막트랜지스터, 그 제조 방법, 이를 이용한 정전기방지 소자, 액정표시장치 및 그 제조 방법
KR101062108B1 (ko) * 2007-03-26 2011-09-02 파이오니아 가부시키가이샤 유기 반도체 소자 및 그 제조방법
KR101415560B1 (ko) * 2007-03-30 2014-07-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR100875102B1 (ko) 2007-09-03 2008-12-19 삼성모바일디스플레이주식회사 유기 발광 디스플레이 장치
JP5205894B2 (ja) * 2007-09-21 2013-06-05 大日本印刷株式会社 有機半導体素子、有機半導体素子の製造方法、有機トランジスタアレイ、およびディスプレイ
JP5256676B2 (ja) * 2007-09-21 2013-08-07 大日本印刷株式会社 有機半導体素子、有機半導体素子の製造方法、有機トランジスタアレイ、およびディスプレイ
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KR101427707B1 (ko) * 2008-02-21 2014-08-11 삼성디스플레이 주식회사 유기 박막 트랜지스터 기판 및 그의 제조 방법
KR101480004B1 (ko) 2008-02-21 2015-01-08 삼성디스플레이 주식회사 표시판 및 그 제조 방법
US8049862B2 (en) * 2008-08-08 2011-11-01 Apple Inc. Indium tin oxide (ITO) layer forming
KR101448000B1 (ko) * 2008-08-26 2014-10-14 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조 방법
KR101051075B1 (ko) * 2008-09-19 2011-07-21 경희대학교 산학협력단 유기박막 트랜지스터 어레이 및 그 제조방법
KR20140032155A (ko) * 2012-09-06 2014-03-14 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 그 제조방법
WO2016042924A1 (ja) * 2014-09-18 2016-03-24 富士フイルム株式会社 トランジスタ、および、トランジスタの製造方法
KR102526111B1 (ko) * 2017-12-27 2023-04-25 엘지디스플레이 주식회사 표시 장치
CN109360857A (zh) * 2018-08-15 2019-02-19 南昌工程学院 一种可降解的自支撑薄膜晶体管器件及其制备方法
CN110610684B (zh) * 2019-10-29 2021-03-30 厦门天马微电子有限公司 一种有机电致发光显示面板及显示装置

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Also Published As

Publication number Publication date
JP2006253674A (ja) 2006-09-21
EP1701387A3 (en) 2012-05-09
US7838872B2 (en) 2010-11-23
US20110039363A1 (en) 2011-02-17
CN1832191B (zh) 2010-05-12
EP1701387A2 (en) 2006-09-13
TWI377675B (en) 2012-11-21
KR20060098982A (ko) 2006-09-19
EP1701387B1 (en) 2015-04-08
TW200703656A (en) 2007-01-16
US20060202199A1 (en) 2006-09-14
US8039296B2 (en) 2011-10-18
CN1832191A (zh) 2006-09-13

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