KR101121117B1 - 리드 프레임 및 그 제조 방법 - Google Patents
리드 프레임 및 그 제조 방법 Download PDFInfo
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- KR101121117B1 KR101121117B1 KR1020110003081A KR20110003081A KR101121117B1 KR 101121117 B1 KR101121117 B1 KR 101121117B1 KR 1020110003081 A KR1020110003081 A KR 1020110003081A KR 20110003081 A KR20110003081 A KR 20110003081A KR 101121117 B1 KR101121117 B1 KR 101121117B1
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- Prior art keywords
- lead frame
- layer
- copper oxide
- copper
- hydroxide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
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- C23C22/48—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6 not containing phosphates, hexavalent chromium compounds, fluorides or complex fluorides, molybdates, tungstates, vanadates or oxalates
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Abstract
Description
도 2는 종래의 수지밀봉형 반도체 장치의 다른 한 예를 부분적으로 예시하는 단면도.
도 3은 본 발명에 따른 수지밀봉형 반도체 장치의 바람직한 실시예를 예시하는 단면도.
도 4는 본 발명의 방법을 포함한 다른 방법에 의해 산화동층을 형성한 경우의 층 구성의 변동을 예시하는 그래프.
도 5의 (a) 내지 (c)는 본 발명의 방법에 의해 수산화물 함유 산화동층을 형성하는 과정을 순서대로 예시하는 단면도.
도 6은 본 발명의 반도체 장치에서 수산화물 함유 산화동층과 에폭시 수지가 함께 접합하는 메카니즘을 모식적으로 예시하는 단면도.
도 7은 종래의 반도체 장치에서 수산화물 함유 산화동층과 에폭시 수지가 함께 접합하는 메카니즘을 모식적으로 예시하는 단면도.
도 8은 본 발명의 방법을 포함한 다른 방법에 의해 산화동층을 형성한 경우의 밀봉수지의 밀착 강도의 변동을 예시하는 그래프.
도 9는 미처리 동합금재의 표면 상태를 예시한 주사 전자현미경(SEM, ×l0,000)을 사용하여 얻은 사진 및 원자간력(atomic force) 현미경(AFM, ×10,000)을 사용하여 얻은 표면 해석도.
도 10은 1O초간의 흑화 처리 후의 동합금재의 표면 상태를 예시한 주사 전자현미경(SEM, ×10,000)을 사용하여 얻은 사진 및 원자간력 현미경(AFM, ×10,000)을 사용하여 얻은 표면 해석도.
도 11은 본 발명을 따라 산화 강화제의 존재시에 흑화 처리한 후의 동합금재의 표면 상태를 예시한 주사 전자현미경(SEM, ×1O,00O)을 사용하여 얻은 사진 및 원자간력 현미경(AFM, ×10,000)을 사용하여 얻은 표면 해석도.
도 12는 본 발명을 따라 양극산화 처리 후의 동합금재의 표면 상태를 예시한 주사 전자현미경(SEM, ×10,O00)을 사용하여 얻은 사진 및 원자간력 현미경(AFM, ×10,000)을 사용하여 얻은 표면 해석도.
도 13은 240초간의 흑화 처리 후의 동합금재의 표면 상태를 예시한 주사 전자현미경(SEM, ×10,OO0)을 사용하여 얻은 사진 및 원자간력 현미경(AFM, ×10,O00)을 사용하여 얻은 표면 해석도.
도 14는 미처리 동합금재를 가열 처리한 경우에 첨가된 원소에 의해 편석층(segregate layer)이 형성되는 메카니즘을 순서대로 예시하는 단면도.
도 15는 본 발명의 방법을 따라 산화된 동합금재를 가열처리한 경우에 첨가된 원소에 의해 편석층이 형성되지 않는 메카니즘을 순서대로 예시하는 단면도.
도 16은 미처리 동합금재의 AES 깊이 방향 분석의 결과를 예시하는 그래프.
도 17은 본 발명을 따라 l0초간 양극산화 처리 후에 얻어진 동합금재의 AES 깊이 방향 분석의 결과를 예시하는 그래프.
도 18은 본 발명을 따라 산화 강화제의 존재시에 10초간 흑화 처리한 후의 동합금재의 AES 깊이 방향 분석의 결과를 예시하는 그래프.
도 19는 10초간의 흑화 처리 후에 얻어진 동합금재의 AES 깊이 방향 분석의 결과를 예시하는 그래프.
도 20은 은으로 도금한 후에 얻어진 미처리 동합금재의 은도금면의 AES 정성 분석의 결과를 예시하는 그래프.
도 21은 은으로 도금한 후에 얻어진 미처리 동합금재에 본 발명을 따라 10초간 양극산화 처리한 후의 은도금면의 AES 정성 분석의 결과를 예시하는 그래프.
도 22는 은으로 도금한 후에 얻어진 미처리 동합금재에 본 발명을 따라 산화 강화제의 존재시에 10초간 흑화 처리한 후의 은도금면의 AES 정성 분석의 결과를 예시하는 그래프.
도 23은 은으로 도금한 후에 얻어진 미처리 동합금재에 240초간 흑화 처리한 후의 은도금면의 AES 정성 분석의 결과를 예시하는 그래프.
도 24는 본 발명을 따라 산화 강화제의 존재시에 흑화 처리하는 방법을 모식적으로 예시하는 사시도.
도 25는 본 발명을 따라 흑화 처리액 중에서 양극산화하는 방법을 모식적으로 예시하는 사시도.
도 26은 다른 산화동층에 대해서 푸리에 변환 적외 분광 분석(FT-IR)의 결과를 모은 그래프.
300℃ × 가열시간 [대기중에서의 핫 플레이트 가열] | |||||
10분 | 15분 | 20분 | 25분 | 30분 | |
A. 미처리 동합금재 | ○ | △ | △ | × | × |
B. 흑화 처리; 10초 | ○ | ○ | ○ | △ | × |
C. 산화제 첨가(본 발명); 10초 | ○ | ○ | ○ | ○ | ○ |
D. 양극산화(본 발명); 10초 | ○ | ○ | ○ | ○ | ○ |
E. 흑화 처리; 240초 | ○ | ○ | ○ | ○ | ○ |
2 수산화물 함유 산화동층
3 은도금층
5 반도체 소자
8 본딩 와이어
9 밀봉수지
10 반도체 장치
21 산화 제 1 동(Cu20)층
22 산화 제 2 동(CuO)층
23 수산화물 함유 산화 제 2 동층
Claims (26)
- 리드 프레임의 표면이 미리 형성되어 있는 반도체 소자 접속용 배선 인출 도금 부분을 제외하여, 수산화물을 함유한 산화동(酸化銅)의 피막으로 부분적으로 또는 전체적으로 덮여져 있는 리드 프레임으로서,
상기 수산화물을 함유한 산화동의 피막의 막 두께가 0.02~0.2㎛의 범위이고,
상기 수산화물을 함유한 산화동의 피막이 0.5㎛ 이하의 입경을 갖는 침형상(needle-like) 결정으로 이루어지는 것을 특징으로 하는 리드 프레임. - 제 1 항에 있어서,
반도체 소자를 탑재하기 위한 것으로서, 상기 반도체 소자의 탑재부가 적어도 절연성 수지로 밀봉되는 것을 특징으로 하는 리드 프레임. - 제 1 항 또는 제 2 항에 있어서,
상기 리드 프레임이 동 또는 그 합금으로 이루어지는 것을 특징으로 하는 리드 프레임. - 제 1 항 또는 제 2 항에 있어서,
상기 리드 프레임이 비동계(非銅系) 금속으로 이루어지고, 또한 상기 리드 프레임의 최표층이 동 또는 그 합금으로 이루어지는 것을 특징으로 하는 리드 프레임. - 제 2 항에 있어서,
상기 절연성 수지가 그 분자 중에 수산기(hydroxyl group)를 함유하는 수지이고, 이 수산기 함유 수지와 상기 수산화물을 함유한 산화동의 피막 사이에 수소 결합력이 발현되는 것을 특징으로 하는 리드 프레임. - 제 5 항에 있어서,
상기 수산기 함유 수지가 에폭시 수지인 것을 특징으로 하는 리드 프레임. - 제 1 항 또는 제 2 항에 있어서,
상기 수산화물을 함유한 산화동의 피막이 상기 리드 프레임의 전면에 피복되어 있는 것을 특징으로 하는 리드 프레임. - 제 1 항 또는 제 2 항에 있어서,
상기 수산화물을 함유한 산화동의 피막이 상기 리드 프레임 측으로부터 순서대로, 산화 제 1 동(Cu2O)층, 산화 제 2 동(CuO)층 및 수산화 제 2 동(Cu(OH)2)층으로 이루어지는 3층 구조체인 것을 특징으로 하는 리드 프레임. - 삭제
- 적어도 1개의 반도체 소자를 제 1 항에 기재된 리드 프레임의 소정의 위치에 탑재하고, 절연성 수지로 밀봉되는 것을 특징으로 하는 반도체 장치.
- 제 10 항에 있어서,
상기 리드 프레임의 외부 리드부를 제외한 전체가 상기 절연성 수지로 밀봉되어 있는 것을 특징으로 하는 반도체 장치. - 제 10 항 또는 제 11 항에 있어서,
상기 반도체 장치가 땜납을 사용하여 실장 기판에 실장되는 것을 특징으로 하는 반도체 장치. - 제 12 항에 있어서,
상기 땜납은 무납(lead-free) 땜납인 것을 특징으로 하는 반도체 장치. - 리드 프레임을 제조하는 방법으로서, 하기(下記)의 공정은
상기 리드 프레임의 표면의 일부분에 도금을 실시하여 반도체 소자 접속용 배선 인출 도금 부분을 형성하는 공정, 및
상기 리드 프레임을 강제적 산화 처리에 의해 표면 처리하고, 그 리드 프레임의 표면에 상기 배선 인출 도금 부분을 제외하여, 수산화물을 함유한 산화동의 피막을 0.02~0.2㎛의 막 두께로 부분적으로 또는 전체적으로 형성하는 공정을 상기의 순서로 실시하고,
상기 수산화물을 함유한 산화동의 피막을 0.5㎛ 이하의 입경을 갖는 침형상 결정으로 형성하는 것을 특징으로 하는 리드 프레임의 제조 방법. - 제 14 항에 있어서,
상기 리드 프레임이 동 또는 그 합금으로 이루어지는 것을 특징으로 하는 리드 프레임의 제조 방법. - 제 14 항에 있어서,
상기 리드 프레임이 비동계 금속으로 이루어지고, 또한 상기 리드 프레임의 최표층이 동 또는 그 합금으로 이루어지는 것을 특징으로 하는 리드 프레임의 제조 방법. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
상기 표면 처리 공정을 자기 환원력이 우수한 산화제를 첨가한 흑화 처리액 내에 상기 리드 프레임을 침지함으로써 행하는 것을 특징으로 하는 리드 프레임의 제조 방법. - 제 17 항에 있어서,
상기 흑화 처리액이 강알칼리 화합물과 산화제의 혼합액인 것을 특징으로 하는 리드 프레임의 제조 방법. - 제 17 항에 있어서,
상기 자기 환원력이 우수한 산화제가 과망간산나트륨, 중크롬산나트륨, 퍼옥소이황산나트륨 또는 그 혼합물인 것을 특징으로 하는 리드 프레임의 제조 방법. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
상기 표면 처리 공정을 흑화 처리액 내에 상기 리드 프레임을 침지하여 양극산화 처리함으로써 행하는 것을 특징으로 하는 리드 프레임의 제조 방법. - 제 20 항에 있어서,
상기 흑화 처리액이 강알칼리 화합물과 산화제의 혼합액인 것을 특징으로 하는 리드 프레임의 제조 방법. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
상기 표면 처리 공정을 50℃~80℃의 온도로 1~20초간 걸쳐서 행하는 것을 특징으로 하는 리드 프레임의 제조 방법. - 제 14 항에 있어서,
상기 수산화물을 함유한 산화동의 피막을 상기 리드 프레임의 전면에 피복하는 것을 특징으로 하는 리드 프레임의 제조 방법. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
상기 수산화물을 함유한 산화동의 피막이 상기 리드 프레임 측으로부터 순서대로, 산화 제 1 동(Cu2O)층, 산화 제 2 동(CuO)층 및 수산화 제 2 동(Cu(OH)2)층으로 이루어지는 3층 구조체인 것을 특징으로 하는 리드 프레임의 제조 방법. - 제 14 항 내지 제 16 항 중 어느 한 항에 있어서,
고온도 하에서 처리된 때, 상기 리드 프레임과 상기 수산화물을 함유한 산화동의 피막 사이에 편석층을 형성하지 않는 것을 특징으로 하는 리드 프레임의 제조 방법. - 삭제
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EP1833089A3 (en) | 2010-04-14 |
KR101089201B1 (ko) | 2011-12-02 |
KR20110010832A (ko) | 2011-02-07 |
EP1833089B1 (en) | 2014-12-17 |
JP3883543B2 (ja) | 2007-02-21 |
CN100592501C (zh) | 2010-02-24 |
CN1538518A (zh) | 2004-10-20 |
EP1469514A2 (en) | 2004-10-20 |
US20070085178A1 (en) | 2007-04-19 |
EP1833089A2 (en) | 2007-09-12 |
TWI353043B (en) | 2011-11-21 |
MY136745A (en) | 2008-11-28 |
JP2004332105A (ja) | 2004-11-25 |
EP1469514A3 (en) | 2005-07-13 |
US20040207056A1 (en) | 2004-10-21 |
KR20040090452A (ko) | 2004-10-25 |
EP1469514B1 (en) | 2016-11-23 |
US7524702B2 (en) | 2009-04-28 |
US7301226B2 (en) | 2007-11-27 |
TW200501340A (en) | 2005-01-01 |
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