JP2004332105A - 導体基材、半導体装置及びそれらの製造方法 - Google Patents
導体基材、半導体装置及びそれらの製造方法 Download PDFInfo
- Publication number
- JP2004332105A JP2004332105A JP2004044896A JP2004044896A JP2004332105A JP 2004332105 A JP2004332105 A JP 2004332105A JP 2004044896 A JP2004044896 A JP 2004044896A JP 2004044896 A JP2004044896 A JP 2004044896A JP 2004332105 A JP2004332105 A JP 2004332105A
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- Prior art keywords
- hydroxide
- conductor
- conductor substrate
- substrate
- copper oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims abstract description 104
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- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 139
- 239000005751 Copper oxide Substances 0.000 claims abstract description 71
- 229910000431 copper oxide Inorganic materials 0.000 claims abstract description 71
- 239000000956 alloy Substances 0.000 claims abstract description 69
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 31
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- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 15
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- 239000000203 mixture Substances 0.000 claims description 8
- JYLNVJYYQQXNEK-UHFFFAOYSA-N 3-amino-2-(4-chlorophenyl)-1-propanesulfonic acid Chemical group OS(=O)(=O)CC(CN)C1=CC=C(Cl)C=C1 JYLNVJYYQQXNEK-UHFFFAOYSA-N 0.000 claims description 4
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- JHWIEAWILPSRMU-UHFFFAOYSA-N 2-methyl-3-pyrimidin-4-ylpropanoic acid Chemical compound OC(=O)C(C)CC1=CC=NC=N1 JHWIEAWILPSRMU-UHFFFAOYSA-N 0.000 claims 1
- 238000009834 vaporization Methods 0.000 abstract description 4
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
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- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 description 3
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- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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- C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
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Abstract
【解決手段】 半導体素子を搭載するためのものであって、前記半導体素子の搭載部が少なくとも絶縁性樹脂で封止される導体基材において、前記導体基材の最表層が銅もしくはその合金からなるとともに、前記導体基材が、該導体基材の表面処理に由来して形成された水酸化物を含む酸化銅の皮膜で部分的もしくは全体的に覆われているように構成する。
【選択図】 図1
Description
前記導体基材の最表層が銅もしくはその合金からなるとともに、前記導体基材が、該導体基材の表面処理に由来して形成された水酸化物を含む酸化銅の皮膜で部分的もしくは全体的に覆われていることを特徴とする導体基材にある。
最表層が銅もしくはその合金からなる導体基材を表面処理し、その導体基材の表面に水酸化物を含む酸化銅の皮膜を部分的もしくは全体的に形成する工程を含むことを特徴とする導体基材の製造方法にある。
(1)酸化強化剤添加黒化処理液の使用
通常の表面処理法では、黒化処理液のみを使用しているが、本発明の場合、自己還元力に優れた酸化剤(本発明では、特に「酸化強化剤」とも呼ぶ)を黒化処理液に添加した後、その黒化処理液に導体基材を浸漬する。
(2)黒化処理液と陽極酸化の併用
黒化処理液中に導体基材を浸漬して陽極酸化を行う。
1)従来の方法(10秒間の黒化処理)
2)本発明方法(酸化強化剤添加黒化処理液の使用、5秒間の処理)
3)本発明方法(酸化強化剤添加黒化処理液の使用、10秒間の処理)
4)本発明方法(黒化処理液と陽極酸化の併用、2秒間の処理)
5)本発明方法(黒化処理液と陽極酸化の併用、10秒間の処理)
6)従来の方法(240秒間の黒化処理)
を使用して形成した酸化銅皮膜、すなわち、酸化第一銅(Cu2O)層及び酸化第二銅(CuO)層の、それぞれの膜厚をプロットしたグラフである。なお、膜厚の測定は、カソード還元法によって実施した。
反応の初期段階において、図3(B)に示すように、導体基材1の表面側に酸化第一銅Cu2O層21と水酸化第二銅Cu(OH)2層23が形成される。ここで、次のような2つの反応が進行する。
反応(1):
2Cu + O2− → Cu2O + 2e
反応(2):
Cu2O + O2− → 2CuO + 2e
ここで、反応速度比は反応(1)のほうが反応(2)よりも大きいので、図3(C)に示すように、本発明において目的とされる複合酸化膜、すなわち酸化第一銅Cu2O層21、酸化第二銅CuO層22及び水酸化第二銅Cu(OH)2層23からなる3層構造体が形成される。すなわち、Cu2O層及びCuO層の形成と同時に、銅の溶解によって生成したCuO2 2−は、水分子と反応を行い、
CuO2 2− + 2H2O → Cu(OH)2+2OH−
Cu(OH)2が生成する。また、生成したCu(OH)2は、図示のように酸化銅皮膜上に沈積する。
反応の初期段階において、図3(B)に示すように、導体基材1の表面側に酸化第一銅Cu2O層21と水酸化第二銅Cu(OH)2層23が形成される。ここで、次のような2つの反応が進行する。
反応(1):
2Cu + H2O → Cu2O + 2H+ + 2e
反応(2):
Cu2O + H2O → 2CuO + 2H+ + 2e
ここで、反応速度比は反応(1)のほうが反応(2)よりも大きいので、図3(C)に示すように、本発明において目的とされる複合酸化膜、すなわち酸化第一銅Cu2O層21、酸化第二銅CuO層22及び水酸化第二銅Cu(OH)2層23からなる3層構造体が形成される。すなわち、Cu2O層及びCuO層の形成と同時に、銅の溶解によって生成したCuO2 2−は、陽極酸化によって生成するH+と反応を行い、
CuO2 2− + 2H+ → Cu(OH)2
Cu(OH)2が生成する。また、生成したCu(OH)2は、図示のように酸化銅皮膜上に沈積する。
水酸化ナトリウム(NaOH) 5〜60g/L
リン酸三ナトリウム(Na3PO4) 0〜200g/L
過マンガン酸ナトリウム(NaMnO4) 50〜100g/L
処理条件:
浴温 約50〜80℃
処理時間 約5〜20秒間
次いで、図23を参照すると、陽極酸化用の処理装置50は、処理槽51と処理液52とからなる。処理槽51に浸漬されたフープ状又はシート状の導体基材1は、付属の案内ローラー53によって矢印方向に搬送可能である。また、処理槽51は、陽極酸化のため、整流器56に接続された2個の白金電極板(−)54及び55を備えている。また、案内ローラー53も整流器56に接続されて、給電ローラー(+)を構成している。陽極酸化処理液は、例えば、約70℃の浴温で保持され、また、導体基材1の滞留時間は、約1〜20秒間である。すなわち、案内ローラー53の回転速度の調整を通じて導体基材1の処理時間を約1〜20秒間に設定する。また、陽極酸化のために印加される電流は、パルス電流及び直流電流のいずれであってもよく、電流密度は、約0.2〜10A/dm2である。
水酸化ナトリウム(NaOH) 5〜60g/L
リン酸三ナトリウム(Na3PO4) 0〜200g/L
処理条件:
浴温 約50〜80℃
処理時間 約1〜20秒間
電流密度 約0.2〜10A/dm2
本発明の半導体装置では、前記したように、最表面に銅もしくは銅合金を有する導体基材の水酸化物含有酸化銅の皮膜とその皮膜の表面を被覆した封止樹脂とが水素結合力によって結合することで、強力な密着力を得ることができ、半導体装置に非常に優れた信頼性を付与することができる。本発明による水素結合力の発現は、本発明の半導体装置において水酸化物含有酸化銅皮膜1とエポキシ樹脂9が接合するメカニズムを模式的に示した断面図である図4から容易に理解することができるであろう。水酸化物含有酸化銅皮膜1の水酸化物は、エポキシ樹脂9が硬化して生成する水酸基(−OH)と水素結合を行うことによって強力な接着力を発現することができる。本発明者らの知る限りでは、このように酸化銅に水酸化物を共存させることで接着力の強化を図ることは従来技術において提案されていない。
サンプルI:
従来の方法(10秒間の黒化処理)
サンプルII:
本発明方法(酸化強化剤添加黒化処理液の使用、10秒間の処理)
サンプルIII:
本発明方法(黒化処理液と陽極酸化の併用、10秒間の処理)
サンプルIV:
本発明方法(黒化処理液と陽極酸化の併用、120秒間の処理)
図24の分析結果を参照すると、領域Cが、水酸化物に基づく−OH基ピーク(波長:約3400cm−1)を示している。図では、各サンプルにおける酸化銅皮膜が非常に薄いために−OH基ピークが比較的に小さいけれども、膜厚の増加により水酸化物の存在を確認できる(サンプルIVが、増幅例である)。
1)未処理銅合金材
2)従来の方法(10秒間の黒化処理)で処理した銅合金材
3)本発明方法(酸化強化剤添加黒化処理液の使用、5秒間の処理)で処理した銅合金材
4)本発明方法(酸化強化剤添加黒化処理液の使用、10秒間の処理)で処理した銅合金材
5)本発明方法(黒化処理液と陽極酸化の併用、2秒間の処理)で処理した銅合金材
6)本発明方法(黒化処理液と陽極酸化の併用、10秒間の処理)で処理した銅合金材
7)従来の方法(240秒間の黒化処理)で処理した銅合金材
であった。なお、酸化銅皮膜の膜厚は、先に図2を参照して説明した通りである。それぞれのサンプルに封止樹脂(エポキシ樹脂)を面積10.2mm2で成形し、下記の試験条件A及びBで成形前及び成形後に処理した後、封止樹脂密着強度(KgF)を測定した。なお、ここで採用した成形前後の処理は、半導体装置の実際の作製を考慮して、前処理は、チップ搭載時のキュアリング工程及びワイヤボンディング工程を模擬したものであり、また、後処理は、はんだリフロー工程を模擬したものである。
試験A:
エポキシ樹脂の成形前の加熱なし+成形後の加熱(300℃×10秒間)
試験B:
エポキシ樹脂の成形前の加熱(150℃×3時間+270℃×5分間)+成形後の加熱(300℃×10秒間)
図6の試験結果から理解できるように、従来の方法では、膜厚を増加させてはじめて、本発明方法に比較可能な封止樹脂密着強度を得ることができるのに反して、本発明方法の場合、薄膜の状態で早くも満足し得る封止樹脂密着強度を得ることができる。
図7…未処理銅合金材
図8…従来の方法(10秒間の黒化処理)で処理した銅合金材
図9…本発明方法(酸化強化剤添加黒化処理液の使用、10秒間の処理)で処理した銅合金材
図10…本発明方法(黒化処理液と陽極酸化の併用、10秒間の処理)で処理した銅合金材
図11…従来の方法(240秒間の黒化処理)で処理した銅合金材
これらの図面から理解されるように、本発明方法に従って形成された水酸化物含有酸化銅皮膜は、微細な針状結晶から構成される。針状結晶は、約0.5μm以下の粒径を有している。
サンプル1:
未処理銅合金材(MF202)
サンプル2:
本発明方法(黒化処理液と陽極酸化の併用、10秒間の処理)で処理した銅合金材
サンプル3:
本発明方法(酸化強化剤添加黒化処理液の使用、10秒間の処理)で処理した銅合金材
サンプル4:
従来の方法(10秒間の黒化処理)で処理した銅合金材
図14〜図17は、それぞれ、サンプル1〜4のAES分析の結果をプロットしたグラフである。図14(サンプル1)及び図17(サンプル4)において認められるSnピークから、これらの従来品サンプルではSn偏析層が形成されていることがわかる。
サンプル1:
未処理銅合金材(MF202)
サンプル2:
本発明方法(黒化処理液と陽極酸化の併用、10秒間の処理)で処理した銅合金材
サンプル3:
本発明方法(酸化強化剤添加黒化処理液の使用、10秒間の処理)で処理した銅合金材
サンプル4:
従来の方法(240秒間の黒化処理)で処理した銅合金材
図18〜図21は、それぞれ、サンプル1〜4のAES分析の結果をプロットしたグラフである。図21を参照するに、サンプル4(従来例)の場合、酸素(O)のピークが明りょうに存在しており、Agめっきに悪影響を及ぼしていることが理解される。これに対して、サンプル2及び3(本発明例)は、それぞれ、サンプル1(未処理銅合金材)と同じプロファイルを有しており、Agめっきに悪影響を及ぼす酸素(O)を含まないことを示している。
サンプルA:
未処理銅合金材(CDA194)
サンプルB:
従来の方法(10秒間の黒化処理)で処理した銅合金材
サンプルC:
本発明方法(酸化強化剤添加黒化処理液の使用、10秒間の処理)で処理した銅合金材
サンプルD:
本発明方法(黒化処理液と陽極酸化の併用、10秒間の処理)で処理した銅合金材
サンプルE:
従来の方法(240秒間の黒化処理)で処理した銅合金材
それぞれのサンプルを300℃のホットプレートに載置し、大気中で異なる時間(10分、15分、20分、25分又は30分)にわたって加熱した。次いで、それぞれのサンプルの表面に粘着テープ(商品名「スコッチ#810」、3M社製)を貼付し、JIS H8504(めっきの密着性試験方法−テープ試験)に準じてテープ剥離試験を実施した。下記の第1表は、得られた試験結果をまとめたものである。なお、表中、○は、酸化銅皮膜の剥離が生じなかったことを意味し、△は、酸化銅皮膜の一部が剥離したことを意味し、また、×は、酸化銅皮膜が全面的に剥離したことを意味する。
2…水酸化物含有酸化銅皮膜
3…銀めっき層
5…半導体素子
8…ボンディングワイヤ
9…封止樹脂
10…半導体装置
21…酸化第一銅(Cu2O)層
22…酸化第二銅(CuO)層
23…水酸化物含有酸化第二銅層
Claims (40)
- 半導体素子を搭載するためのものであって、前記半導体素子の搭載部が少なくとも絶縁性樹脂で封止される導体基材において、
前記導体基材の最表層が銅もしくはその合金からなるとともに、前記導体基材が、該導体基材の表面処理に由来して形成された水酸化物を含む酸化銅の皮膜で部分的もしくは全体的に覆われていることを特徴とする導体基材。 - 前記導体基材が実質的に銅もしくはその合金からなることを特徴とする請求項1に記載の導体基材。
- 前記導体基材が実質的に非銅系金属からなりかつ該導体基材の最表層が銅もしくはその合金からなることを特徴とする請求項1に記載の導体基材。
- 前記表面処理が、自己還元力に優れた酸化剤を添加した黒化処理液中に前記導体基材を浸漬することからなる強制酸化処理であることを特徴とする請求項1〜3のいずれか1項に記載の導体基材。
- 前記表面処理が、黒化処理液中に前記導体基材を浸漬して陽極酸化処理を行うことからなる強制酸化処理であることを特徴とする請求項1〜3のいずれか1項に記載の導体基材。
- 前記絶縁性樹脂がその分子中に水酸基を含有する樹脂であり、該水酸基含有樹脂と前記水酸化物含有酸化銅の皮膜との間に水素結合力が発現することを特徴とする請求項1〜5のいずれか1項に記載の導体基材。
- 前記水酸基含有樹脂がエポキシ樹脂であることを特徴とする請求項6に記載の導体基材。
- 前記導体基材がリードフレームであることを特徴とする請求項1〜7のいずれか1項に記載の導体基材。
- 前記水酸化物含有酸化銅の皮膜が、配線取り出し部分を除いて、前記導体基材の少なくとも一部の表面に被覆されていることを特徴とする請求項1〜8のいずれか1項に記載の導体基材。
- 前記水酸化物含有酸化銅の皮膜が、前記導体基材の全面に被覆されていることを特徴とする請求項9に記載の導体基材。
- 前記導体基材が放熱板であることを特徴とする請求項1〜6のいずれか1項に記載の導体基材。
- 前記水酸化物含有酸化銅の皮膜が、前記導体基材の側から順に、酸化第一銅(Cu2O)層、酸化第二銅(CuO)層及び水酸化第二銅(Cu(OH)2)層からなる3層構造体であることを特徴とする請求項1〜11のいずれか1項に記載の導体基材。
- 前記水酸化物含有酸化銅の皮膜の膜厚が、0.02〜0.2μmの範囲であることを特徴とする請求項1〜12のいずれか1項に記載の導体基材。
- 高温度下で処理された時、前記導体基材と前記水酸化物含有酸化銅の皮膜との間に偏析層を形成しないことを特徴とする請求項1〜13のいずれか1項に記載の導体基材。
- 前記水酸化物含有酸化銅の皮膜が、0.5μm以下の粒径を有する針状結晶からなることを特徴とする請求項1〜14のいずれか1項に記載の導体基材。
- 少なくとも1個の半導体素子を、請求項1〜15のいずれか1項に記載の導体基材の所定の位置に搭載し、絶縁性樹脂で封止してなることを特徴とする半導体装置。
- 前記導体基材の実質的に全部が前記絶縁性樹脂で封止されていることを特徴とする請求項16に記載の半導体装置。
- 前記半導体装置がはんだを使用して実装基板に実装されることを特徴とする請求項16又は17に記載の半導体装置。
- 前記はんだが鉛フリーはんだであることを特徴とする請求項18に記載の半導体装置。
- 半導体素子を搭載し、前記半導体素子の搭載部を少なくとも絶縁性樹脂で封止するための導体基材を製造する方法であって、
最表層が銅もしくはその合金からなる導体基材を表面処理し、その導体基材の表面に水酸化物を含む酸化銅の皮膜を部分的もしくは全体的に形成する工程を含むことを特徴とする導体基材の製造方法。 - 前記導体基材が実質的に銅もしくはその合金からなることを特徴とする請求項20に記載の導体基材の製造方法。
- 前記導体基材が実質的に非銅系金属からなりかつ該導体基材の最表層が銅もしくはその合金からなることを特徴とする請求項20に記載の導体基材の製造方法。
- 前記表面処理工程を、自己還元力に優れた酸化剤を添加した黒化処理液中に前記導体基材を浸漬することによって行うことを特徴とする請求項20〜22のいずれか1項に記載の導体基材の製造方法。
- 前記黒化処理液が、強アルカリ化合物と酸化剤の混合液であることを特徴とする請求項23に記載の導体基材の製造方法。
- 前記自己還元力に優れた酸化剤が、過マンガン酸ナトリウム、重クロム酸ナトリウム、ペルオクソ二硫酸ナトリウムもしくはその混合物であることを特徴とする請求項23又は24に記載の導体基材の製造方法。
- 前記表面処理工程を、黒化処理液中に前記導体基材を浸漬して陽極酸化処理することによって行うことを特徴とする請求項20〜22のいずれか1項に記載の導体基材の製造方法。
- 前記黒化処理液が、強アルカリ化合物と酸化剤の混合液であることを特徴とする請求項26に記載の導体基材の製造方法。
- 前記表面処理工程を、50〜80℃の温度で1〜20秒間にわたって行うことを特徴とする請求項20〜27のいずれか1項に記載の導体基材の製造方法。
- 分子中に水酸基を含有する樹脂を前記絶縁性樹脂として使用し、該水酸基含有樹脂と前記水酸化物含有酸化銅の皮膜との間に水素結合力を発現させることを特徴とする請求項20〜28のいずれか1項に記載の導体基材の製造方法。
- 前記水酸基含有樹脂としてエポキシ樹脂を使用することを特徴とする請求項29に記載の導体基材の製造方法。
- 前記導体基材としてリードフレームを使用することを特徴とする請求項20〜30のいずれか1項に記載の導体基材の製造方法。
- 前記水酸化物含有酸化銅の皮膜を、配線取り出し部分を除いて、前記導体基材の少なくとも一部の表面に被覆することを特徴とする請求項20〜31のいずれか1項に記載の導体基材の製造方法。
- 前記水酸化物含有酸化銅の皮膜を前記導体基材の全面に被覆することを特徴とする請求項32に記載の導体基材の製造方法。
- 前記導体基材として放熱板を使用することを特徴とする請求項20〜30のいずれか1項に記載の導体基材の製造方法。
- 前記水酸化物含有酸化銅の皮膜が、前記導体基材の側から順に、酸化第一銅(Cu2O)層、酸化第二銅(CuO)層及び水酸化第二銅(Cu(OH)2)層からなる3層構造体であることを特徴とする請求項20〜34のいずれか1項に記載の導体基材の製造方法。
- 前記水酸化物含有酸化銅の皮膜の膜厚が、0.02〜0.2μmの範囲であることを特徴とする請求項20〜35のいずれか1項に記載の導体基材の製造方法。
- 高温度下で処理された時、前記導体基材と前記水酸化物含有酸化銅の皮膜との間に偏析層を形成しないことを特徴とする請求項20〜36のいずれか1項に記載の導体基材の製造方法。
- 前記水酸化物含有酸化銅の皮膜を、0.5μm以下の粒径を有する針状結晶から形成することを特徴とする請求項20〜37のいずれか1項に記載の導体基材の製造方法。
- 請求項20〜38のいずれか1項に記載の方法によって水酸化物含有酸化銅の皮膜を導体基材上に形成した後、前記導体基材の所定の位置に半導体素子を搭載し、前記半導体素子と前記導体基材との間を電気的に接続し、さらに前記半導体素子の搭載部を少なくとも絶縁性樹脂で封止することを特徴とする半導体装置の製造方法。
- 前記絶縁性樹脂で当該半導体装置の実質的に全部を封止することを特徴とする請求項39に記載の半導体装置の製造方法。
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JP2010074152A (ja) * | 2008-08-22 | 2010-04-02 | Sumitomo Chemical Co Ltd | リードフレーム、樹脂パッケージ、半導体装置及び樹脂パッケージの製造方法 |
US8410589B2 (en) | 2008-08-22 | 2013-04-02 | Sumitomo Chemical Company, Limited | Lead frame, resin package, semiconductor device and resin package manufacturing method |
KR101591094B1 (ko) * | 2008-08-22 | 2016-02-02 | 스미또모 가가꾸 가부시끼가이샤 | 리드 프레임, 수지 패키지, 반도체 장치 및 수지 패키지의 제조 방법 |
JP2013539502A (ja) * | 2010-07-27 | 2013-10-24 | コーニング インコーポレイテッド | 自己不動態化する機械的に安定な気密薄膜 |
JP2017028152A (ja) * | 2015-07-24 | 2017-02-02 | 株式会社三井ハイテック | リードフレーム及びその製造方法 |
JP2016040849A (ja) * | 2015-12-17 | 2016-03-24 | アトテック ドイチェランド ゲーエムベーハー | 金属表面を処理する方法と、この方法によって形成された装置 |
JP2018190942A (ja) * | 2017-05-11 | 2018-11-29 | 大口マテリアル株式会社 | リードフレーム及びその製造方法 |
US10818580B2 (en) | 2017-07-07 | 2020-10-27 | Shinko Electric Industries Co., Ltd. | Electronic component device |
JP2019096694A (ja) * | 2017-11-21 | 2019-06-20 | 新光電気工業株式会社 | リードフレーム、半導体装置、リードフレームの製造方法 |
US10665533B2 (en) | 2017-11-21 | 2020-05-26 | Shinko Electric Industries, Co., Ltd. | Lead frame and semiconductor device |
JP7016677B2 (ja) | 2017-11-21 | 2022-02-07 | 新光電気工業株式会社 | リードフレーム、半導体装置、リードフレームの製造方法 |
US11791250B2 (en) | 2018-11-07 | 2023-10-17 | Shinko Electric Industries Co., Ltd. | Lead frame, semiconductor device, and lead frame manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
KR20110010832A (ko) | 2011-02-07 |
EP1833089A2 (en) | 2007-09-12 |
EP1469514A2 (en) | 2004-10-20 |
TW200501340A (en) | 2005-01-01 |
US7301226B2 (en) | 2007-11-27 |
EP1469514A3 (en) | 2005-07-13 |
CN1538518A (zh) | 2004-10-20 |
KR101089201B1 (ko) | 2011-12-02 |
US20070085178A1 (en) | 2007-04-19 |
KR101121117B1 (ko) | 2012-03-22 |
EP1469514B1 (en) | 2016-11-23 |
EP1833089B1 (en) | 2014-12-17 |
US20040207056A1 (en) | 2004-10-21 |
JP3883543B2 (ja) | 2007-02-21 |
CN100592501C (zh) | 2010-02-24 |
EP1833089A3 (en) | 2010-04-14 |
KR20040090452A (ko) | 2004-10-25 |
MY136745A (en) | 2008-11-28 |
TWI353043B (en) | 2011-11-21 |
US7524702B2 (en) | 2009-04-28 |
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