CN106653624B - 一种稳固芯片的封装工艺 - Google Patents
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
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- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
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Abstract
本发明提出了一种稳固芯片的封装工艺,优势在于,适用于存在孤岛电极的设计,可显著增加集成电路封装I/O数。另外,固定芯片的平台边角区域铜层表面有机金属转化膜与封装树脂紧密结合,保证了芯片封装稳固,有利于提升后期测试良率和使用寿命。
Description
技术领域
本发明涉及一种稳固芯片的封装工艺,本发明属于电子技术领域。
背景技术
方形扁平无引脚封装(Quad Flat NO-lead Package,QFN)技术是一种重要的集成电路封装工艺,传统QFN利用铜板正反面不同图案腐蚀得到引脚框架结构,制作过程需要塑封贴膜,且难以设计孤岛电极,I/O数受限制较多。另外,封装后使用过程中受应力作用往往出现芯片连接不牢的现象。
发明内容
针对现有技术的不足,本发明提出了一种稳固芯片的封装工艺,其特征在于:工艺过程包括:(1)在导电基板上涂覆感光材料;(2)感光材料图形转移,使得芯片固定平台和引脚邦线区的线路槽露出;(3)在图形化区基板露出部分镀底电极;(4)在底电极上继续镀铜层;(5)再次涂覆感光材料,并通过图形转移只露出引脚邦线区和芯片固定平台的固晶焊接区铜层,而芯片固定平台上固晶焊接区四周边缘的铜层仍被感光材料覆盖;(6)在引脚邦线区和固晶焊接区的铜层上镀顶电极;(7)去除剩余感光材料;(8)在铜层侧面以及芯片焊接平台上固晶焊接区四周的铜层顶面修饰有机金属转化膜;(9)将芯片焊接在固晶焊接区,并将引脚邦定在引脚邦线区的顶电极上;(10)灌注封装树脂材料,树脂固化成型后去除基板,露出底电极,完成封装。
所述感光材料优选聚丙烯酸酯类的干膜、湿膜。
所述底电极为标准电极电势高于铜的金属材料,优选金、银、钯或其合金,顶电极为标准电极电势高于铜且易于焊接的金属,优选金、银、钯或其合金。
所述芯片固定平台包括中间的固晶焊接区和固晶焊接区四周的区域,固晶焊接区镀有顶电极并与芯片焊接,固晶焊接区四周区域的铜层上没有顶电极。
铜层侧面以及芯片固定平台上固晶焊接区四周的铜层顶面修饰的有机金属转化膜优选采用棕氧化或黑氧化工艺在铜的表面反应来获取。
所述封装树脂材料优选环氧树脂。
所述导电基板为金属基板或镀有导电金属层的刚性基板,树脂固化成型后采用物理剥离或化学蚀刻的方式去除导电基板。
本发明的优势在于,适用于存在孤岛电极的设计,可显著增加集成电路封装I/O数。另外,固定芯片的平台边角区域铜层表面有机金属转化膜与封装树脂紧密结合,保证了芯片封装稳固,有利于提升后期测试良率和使用寿命。
附图说明
图1采用本发明封装结构示意图。1-底电极;2-铜层;3-铜层表面有机金属转化膜;4-顶电极;5-封装树脂;6-芯片;7-邦线。
图2采用本发明工艺流程图。a-导电基板涂覆感光材料;b-在图形化获得线路槽;c-镀底电极;d-镀铜层;e-再次涂覆感光材料;f-引脚邦线区和芯片固定平台上的固晶焊接区铜层,而芯片固定平台上固晶焊接区四周的铜层仍被感光材料覆盖;g-镀顶电极;f-去除剩余感光材料;g-在铜层侧面以及芯片固定平台上的固晶焊接区的铜层顶面修饰有机金属转化膜;h-固定芯片和邦线;i-灌注封装树脂;j-剥离导电基板。
具体实施方式
实施例1:
在铜基板上涂覆聚丙烯酸酯干膜,通过曝光图形转移,使得芯片固定区和引脚邦线区的线路槽露出;在图形化区铜基板露出部分镀3μm银作为底电极,在银底电极上继续镀40μm铜层;再次涂覆感光材料,并通过图形转移只露出引脚邦线区和芯片固定平台上的固晶焊接区的铜层,而芯片固定平台上固晶焊接区四周的铜层仍被感光材料覆盖;在引脚邦线区和固晶焊接区的铜层上镀3μm银作为顶电极,去除剩余聚丙烯酸酯干膜,将全部材料浸入硫酸-过氧化氢棕氧化溶液中使得铜表面生成有机金属转化膜;将芯片焊接在固晶焊接区,并将引脚邦定在引脚邦线区的顶电极上;灌注封装环氧树脂材料,树脂固化成型后将铜基板完全腐蚀掉,得到如图1所示的封装结构,完成封装。工艺流程如图2所示。
实施例2:
在铝基板上涂覆聚丙烯酸酯干膜,通过曝光图形转移,使得芯片固定区和引脚邦线区的线路槽露出;在图形化区铝基板露出部分镀2μm金作为底电极,在银底电极上继续镀45μm铜层;再次涂覆感光材料,并通过图形转移只露出引脚邦线区和芯片固定平台上的固晶焊接区的铜层,而芯片固定平台上固晶焊接区四周的铜层仍被感光材料覆盖;在引脚邦线区和固晶焊接区的铜层上镀2μm钯作为顶电极,去除剩余聚丙烯酸酯干膜,将全部材料浸入硫酸-过氧化氢棕氧化溶液中使得铜表面生成有机金属转化膜;将芯片焊接在固晶焊接区,并将引脚邦定在引脚邦线区的顶电极上;灌注封装环氧树脂材料,树脂固化成型后将铝基板完全腐蚀掉,得到如图1所示的封装结构,完成封装。
实施例3:
在镀锡氧化铝基板的锡层上涂覆聚丙烯酸酯湿膜,通过曝光图形转移,使得芯片固定区和引脚邦线区的线路槽露出;在图形化区基板露出部分镀2μm银作为底电极,在银底电极上继续镀45μm铜层;再次涂覆感光材料,并通过图形转移只露出引脚邦线区和芯片固定平台上的固晶焊接区的铜层,而芯片固定平台上固晶焊接区四周的铜层仍被感光材料覆盖;在引脚邦线区和固晶焊接区的铜层上镀2μm银作为顶电极,去除剩余聚丙烯酸酯干膜,将全部材料浸入氢氧化钠-亚硝酸钠-磷酸三钠黑氧化溶液中使得铜表面生成有机金属转化膜;将芯片焊接在固晶焊接区,并将引脚邦定在引脚邦线区的顶电极上;灌注封装环氧树脂材料,树脂固化成型后将镀锡氧化铝基板物理剥离,得到如图1所示的封装结构,完成封装。
实施例4:
在镜面不锈钢基板上涂覆聚丙烯酸酯湿膜,通过曝光图形转移,使得芯片固定区和引脚邦线区的线路槽露出;在图形化区不锈钢基板露出部分镀1μm金作为底电极,在银底电极上继续镀30μm铜层;再次涂覆感光材料,并通过图形转移只露出引脚邦线区和芯片固定平台上的固晶焊接区的铜层,而而芯片固定平台上固晶焊接区四周的铜层仍被感光材料覆盖;在引脚邦线区和固晶焊接区的铜层上镀2μm银作为顶电极,去除剩余聚丙烯酸酯干膜,将全部材料浸入氢氧化钠-亚硝酸钠-磷酸三钠黑氧化溶液中使得铜表面生成有机金属转化膜;将芯片焊接在固晶焊接区,并将引脚邦定在引脚邦线区的顶电极上;灌注封装环氧树脂材料,树脂固化成型后将镜面不锈钢基板物理剥离,得到如图1所示的封装结构,完成封装。
Claims (9)
1.一种稳固芯片的封装工艺,其特征在于:工艺过程包括:(1)在导电基板上涂覆感光材料;(2)感光材料图形转移,使得芯片固定平台和引脚邦线区的线路槽露出;(3)在图形化区基板露出部分镀底电极;(4)在底电极上继续镀铜层;(5)再次涂覆感光材料,并通过图形转移只露出引脚邦线区和芯片固定平台的固晶焊接区铜层,而芯片固定平台上固晶焊接区四周边缘的铜层仍被感光材料覆盖;(6)在引脚邦线区和固晶焊接区的铜层上镀顶电极;(7)去除剩余感光材料;(8)在铜层侧面以及芯片焊接平台上固晶焊接区四周的铜层顶面修饰有机金属转化膜;(9)将芯片焊接在固晶焊接区,并将引脚邦定在引脚邦线区的顶电极上;(10)灌注封装树脂材料,树脂固化成型后去除基板,露出底电极,完成封装。
2.根据权利要求1所述一种稳固芯片的封装工艺,其特征在于:所述感光材料聚丙烯酸酯类的干膜、湿膜。
3.根据权利要求1所述一种稳固芯片的封装工艺,其特征在于:所述底电极为标准电极电势高于铜的金属材料,顶电极为标准电极电势高于铜且易于焊接的金属。
4.根据权利要求3所述一种稳固芯片的封装工艺,其特征在于:所述标准电极电势高于铜的金属材料包括金、银、钯或其合金。
5.根据权利要求3所述一种稳固芯片的封装工艺,其特征在于:所述标准电极电势高于铜且易于焊接的金属包括金、银、钯或其合金。
6.根据权利要求1所述一种稳固芯片的封装工艺,其特征在于:所述芯片固定平台包括中间的固晶焊接区和固晶焊接区四周的区域,固晶焊接区镀有顶电极并与芯片焊接,固晶焊接区四周区域的铜层上没有顶电极。
7.根据权利要求1所述一种稳固芯片的封装工艺,其特征在于:铜层侧面以及芯片固定平台上固晶焊接区四周的铜层顶面修饰的有机金属转化膜采用棕氧化或黑氧化工艺在铜的表面反应来获取。
8.根据权利要求1所述一种稳固芯片的封装工艺,其特征在于:所述封装树脂材料环氧树脂。
9.根据权利要求1所述一种稳固芯片的封装工艺,其特征在于:所述导电基板为金属基板或镀有导电金属层的刚性基板,树脂固化成型后采用物理剥离或化学蚀刻的方式去除导电基板。
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JP2001217372A (ja) * | 2000-06-28 | 2001-08-10 | Sanyo Electric Co Ltd | 回路装置およびその製造方法 |
CN1538518A (zh) * | 2003-04-16 | 2004-10-20 | �¹������ҵ��ʽ���� | 导体衬底,半导体器件及其制造方法 |
CN1599046A (zh) * | 2004-08-09 | 2005-03-23 | 江苏长电科技股份有限公司 | 集成电路或分立元件超薄无脚封装工艺及其封装结构 |
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JP2001217372A (ja) * | 2000-06-28 | 2001-08-10 | Sanyo Electric Co Ltd | 回路装置およびその製造方法 |
CN1538518A (zh) * | 2003-04-16 | 2004-10-20 | �¹������ҵ��ʽ���� | 导体衬底,半导体器件及其制造方法 |
CN1599046A (zh) * | 2004-08-09 | 2005-03-23 | 江苏长电科技股份有限公司 | 集成电路或分立元件超薄无脚封装工艺及其封装结构 |
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