CN107068577B - 一种集成电路封装工艺 - Google Patents
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- 238000012858 packaging process Methods 0.000 title claims abstract description 13
- 238000004806 packaging method and process Methods 0.000 claims abstract description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 36
- 229910052802 copper Inorganic materials 0.000 claims description 36
- 239000010949 copper Substances 0.000 claims description 36
- 238000007747 plating Methods 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 27
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000004332 silver Substances 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 12
- 229920000058 polyacrylate Polymers 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000006087 Brown hydroboration reaction Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000007739 conversion coating Methods 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 claims description 2
- 239000003365 glass fiber Substances 0.000 claims description 2
- 239000002861 polymer material Substances 0.000 claims description 2
- 238000012536 packaging technology Methods 0.000 abstract description 2
- 239000004593 Epoxy Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- -1 sodium hydroxide-sodium nitrite-trisodium phosphate Chemical compound 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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Abstract
本发明提出了一种自由平面无引脚封装的集成电路封装工艺,结合了QFN和BGA封装技术的优势,可大量设计孤岛电极,显著增加集成电路封装I/O数,另外,通过黑氧化或棕氧化工艺,不仅增强了顶电极和底电极之间的铜表面与封装树脂材料的结合,还对底部镀锡层进行腐蚀多孔化,使得底基板易于剥离和回收利用,有利于节约成本和绿色生产。
Description
技术领域
本发明涉及一种集成电路封装工艺,本发明属于电子技术领域。
背景技术
方形扁平无引脚封装(Quad Flat No-lead Package,QFN)技术是一种重要的集成电路封装工艺,具有表面贴装式封装,焊盘尺寸小、体积小、占有PCB 区域小、元件厚度薄、非常低的阻抗、自感,可满足高速或者微波的应用等优点。由于底部中央的大面积裸露焊盘被焊接到PCB的散热焊盘上,使得QFN具有极佳的电和热性能。但缺点在于QFN中部向四周连续布线,线宽受限于铜厚、且难以设计孤岛电极,增加I/O数会带来的生产成本和可靠性问题,限制了芯片和PCB 板的设计自由度。相比较而言球栅阵列芯片封装技术(Ball GridArray.BGA) 可增加I/O数和间距,在设计上较QFN更为灵活,但工艺检修困难,对PCB板工艺要求更高,不适用于可靠性要求高的器件的封装及产业效率的提高。
发明内容
针对现有技术的不足,本发明提出了一种集成电路封装工艺,其特征在于:工艺过程包括:(1)在刚性基板上镀锡;(2)在锡层上涂覆感光材料,再通过图形转移露出线路槽;(3)在图形化区锡层露出部分镀底电极;(4)在底电极上继续镀铜层;(5)在铜层上镀顶电极;(6)去除剩余感光材料;(7)在铜层侧面修饰有机金属转化膜;(8)将芯片邦定在顶电极上并灌注封装树脂材料; (9)树脂固化成型后直接剥离镀锡基板,露出底电极,完成封装,镀锡基板可回收利用。
所述刚性基板材质为惰性金属、陶瓷、或刚性高分子材料,优选铜板、氧化铝基板、玻纤增强环氧树脂板、玻璃基板;
感光材料优选聚丙烯酸酯类的干膜、湿膜。
所述底电极为标准电极电势高于铜的金属材料,优选金、银、钯或其合金,顶电极为标准电极电势高于铜且易于焊接的金属,优选银、钯或其合金。
铜层侧面修饰有机金属转化膜优选采用棕氧化或黑氧化工艺在铜的表面反应来获取。
封装树脂材料优选环氧树脂。
本发明结合了QFN和BGA封装技术的优势,可大量设计孤岛电极,显著增加集成电路封装I/O数,另外,通过黑氧化或棕氧化工艺,不仅增强了顶电极和底电极之间的铜表面与封装树脂材料的结合,还对底部镀锡层进行腐蚀多孔化,使得底基板易于剥离和回收利用,不需要将整个基板完全腐蚀掉,有利于节约成本和绿色生产。
附图说明
图1采用本发明侧面金属镀层结构示意图。1-金属基板;2-焊锡层;3-底电极;4-铜层;5-顶电极。
图2采用本发明工艺流程图。a-刚性基板镀锡并涂覆感光材料;b-在图形化获得线路槽;c-镀底电极;d-镀铜层;e-镀顶电极;f-去除剩余感光材料并在铜层侧面修饰有机金属转化膜;g-邦线;h-灌注封装树脂;i-剥离镀锡基板。
具体实施方式
实施例1:
在FR4基板上镀锡层,锡层上涂覆聚丙烯酸酯干膜,通过曝光图形转移,露出线路槽;在图形化区锡层露出部分镀3μm银作为底电极,在银底电极上继续镀40μm铜层;在铜层上再镀3μm银作为顶电极,金属层侧面结构如图1所示。去除剩余聚丙烯酸酯干膜,将全部材料浸入硫酸-过氧化氢棕氧化溶液中使得铜表面生成有机金属转化膜并腐蚀锡层,在芯片邦定在顶电极上后灌注环氧封装树脂材料,最后,将镀锡FR4基板机械剥离露出银底电极完成封装。
实施例2:
在铜基板上镀锡层,锡层上涂覆聚丙烯酸酯湿膜,通过曝光图形转移,露出线路槽;在图形化区锡层露出部分镀2μm金作为底电极,在金底电极上继续镀50μm铜层;在铜层上再镀3μm银作为顶电极。去除剩余聚丙烯酸酯湿膜,将全部材料浸入硫酸-过氧化氢棕氧化溶液中使得顶电机和底电机之间铜层侧表面生成有机金属转化膜并腐蚀锡层,在芯片邦定在顶电极上后灌注环氧封装树脂材料,最后,将镀锡铜基板机械剥离掉露出金底电极完成封装。
实施例3:
在氧化铝基板上镀锡层,锡层上涂覆聚丙烯酸酯湿膜,通过曝光图形转移,露出线路槽;在图形化区锡层露出部分镀2μm银作为底电极,在银底电极上继续镀45μm铜层;在铜层上再镀2μm银作为顶电极。去除剩余聚丙烯酸酯湿膜,将全部材料浸入氢氧化钠-亚硝酸钠-磷酸三钠黑氧化溶液中使得铜表面生成有机金属转化膜并腐蚀锡层,在芯片邦定在顶电极上后灌注环氧封装树脂材料,最后,将镀锡氧化铝基板机械剥离露出银底电极完成封装。
实施例4:
在玻璃基板上镀锡层,锡层上涂覆聚丙烯酸酯湿膜,通过曝光图形转移,露出线路槽;在图形化区锡层露出部分镀1μm金作为底电极,在金底电极上继续镀30μm铜层;在铜层上再镀1μm银作为顶电极。去除剩余聚丙烯酸酯湿膜,将全部材料浸入氢氧化钠-亚硝酸钠-磷酸三钠黑氧化溶液中使得铜表面生成有机金属转化膜并腐蚀锡层,在芯片邦定在顶电极上后灌注环氧封装树脂材料,最后,将镀锡玻璃基板机械剥离露出金底电极完成封装。
Claims (7)
1.一种集成电路封装工艺,其特征在于:工艺过程包括:(1)在刚性基板上镀锡,所述刚性基板材质为陶瓷或刚性高分子材料;(2)在锡层上涂覆感光材料,再通过图形转移露出线路槽;(3)在图形化区锡层露出部分镀底电极;(4)在底电极上继续镀铜层;(5)在铜层上镀顶电极;(6)去除剩余感光材料;(7)在铜层侧面修饰有机金属转化膜;(8)将芯片邦定在顶电极上并灌注封装树脂材料;(9)树脂固化成型后直接剥离镀锡基板,露出底电极,完成封装,所述锡层进行了腐蚀多孔化,镀锡基板可回收利用;
所述工艺不需要将整个基板完全腐蚀掉。
2.根据权利要求1所述一种集成电路封装工艺,其特征在于:所述刚性基板材质包括氧化铝基板、玻纤增强环氧树脂板或玻璃基板。
3.根据权利要求1所述一种集成电路封装工艺,其特征在于:所述感光材料包括聚丙烯酸酯类的干膜或湿膜。
4.根据权利要求1所述一种集成电路封装工艺,其特征在于:所述底电极为标准电极电势高于铜的金属材料,顶电极为标准电极电势高于铜且易于焊接的金属。
5.根据权利要求4所述一种集成电路封装工艺,其特征在于:所述标准电极电势高于铜的金属材料包括金、银、钯或其合金,所述标准电极电势高于铜且易于焊接的金属包括银、钯或其合金。
6.根据权利要求1所述一种集成电路封装工艺,其特征在于:铜层侧面修饰有机金属转化膜采用棕氧化或黑氧化工艺在铜的表面反应来获取。
7.根据权利要求1所述一种集成电路封装工艺,其特征在于:所述封装树脂材料包括环氧树脂。
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5379187A (en) * | 1993-03-25 | 1995-01-03 | Vlsi Technology, Inc. | Design for encapsulation of thermally enhanced integrated circuits |
CN1538518A (zh) * | 2003-04-16 | 2004-10-20 | �¹������ҵ��ʽ���� | 导体衬底,半导体器件及其制造方法 |
CN1599046A (zh) * | 2004-08-09 | 2005-03-23 | 江苏长电科技股份有限公司 | 集成电路或分立元件超薄无脚封装工艺及其封装结构 |
CN102548216A (zh) * | 2010-12-09 | 2012-07-04 | 北大方正集团有限公司 | 制作起始层芯板的方法 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5379187A (en) * | 1993-03-25 | 1995-01-03 | Vlsi Technology, Inc. | Design for encapsulation of thermally enhanced integrated circuits |
CN1538518A (zh) * | 2003-04-16 | 2004-10-20 | �¹������ҵ��ʽ���� | 导体衬底,半导体器件及其制造方法 |
CN1599046A (zh) * | 2004-08-09 | 2005-03-23 | 江苏长电科技股份有限公司 | 集成电路或分立元件超薄无脚封装工艺及其封装结构 |
CN102548216A (zh) * | 2010-12-09 | 2012-07-04 | 北大方正集团有限公司 | 制作起始层芯板的方法 |
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Address after: 518125 No.9, Xinfa 2nd Road, Xinqiao community, Xinqiao street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Dinghua Xintai Technology Co.,Ltd. Address before: 518125 New Bridge, Shajing Street, Baoan District, Shenzhen City, Guangdong Province, Third Row, Seventh Building, Xinqiao New Industrial Zone Patentee before: ACCELERATED PRINTED CIRCUIT BOARD Co.,Ltd. |