KR101109367B1 - Ｃｍｐ용 다층 연마 패드 재료 - Google Patents

Ｃｍｐ용 다층 연마 패드 재료 Download PDF

Info

Publication number
KR101109367B1
KR101109367B1 KR1020057024127A KR20057024127A KR101109367B1 KR 101109367 B1 KR101109367 B1 KR 101109367B1 KR 1020057024127 A KR1020057024127 A KR 1020057024127A KR 20057024127 A KR20057024127 A KR 20057024127A KR 101109367 B1 KR101109367 B1 KR 101109367B1
Authority
KR
South Korea
Prior art keywords
layer
polishing pad
polishing
polymer sheet
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020057024127A
Other languages
English (en)
Korean (ko)
Other versions
KR20060023562A (ko
Inventor
아바네쉬워 프라새드
롤랜드 케이. 세빌라
미카엘 에스. 라시
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐보트 마이크로일렉트로닉스 코포레이션 filed Critical 캐보트 마이크로일렉트로닉스 코포레이션
Publication of KR20060023562A publication Critical patent/KR20060023562A/ko
Application granted granted Critical
Publication of KR101109367B1 publication Critical patent/KR101109367B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/008—Abrasive bodies without external bonding agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D13/00—Wheels having flexibly-acting working parts, e.g. buffing wheels; Mountings therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
KR1020057024127A 2003-06-17 2004-06-03 Ｃｍｐ용 다층 연마 패드 재료 Expired - Lifetime KR101109367B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/463,680 2003-06-17
US10/463,680 US6884156B2 (en) 2003-06-17 2003-06-17 Multi-layer polishing pad material for CMP
PCT/US2004/017564 WO2005000527A2 (en) 2003-06-17 2004-06-03 Multi-layer polishing pad material for cmp

Publications (2)

Publication Number Publication Date
KR20060023562A KR20060023562A (ko) 2006-03-14
KR101109367B1 true KR101109367B1 (ko) 2012-01-31

Family

ID=33517127

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057024127A Expired - Lifetime KR101109367B1 (ko) 2003-06-17 2004-06-03 Ｃｍｐ용 다층 연마 패드 재료

Country Status (11)

Country Link
US (1) US6884156B2 (enExample)
EP (2) EP1651388B1 (enExample)
JP (1) JP5090732B2 (enExample)
KR (1) KR101109367B1 (enExample)
CN (1) CN100591483C (enExample)
AT (1) ATE416881T1 (enExample)
DE (1) DE602004018321D1 (enExample)
MY (1) MY134466A (enExample)
SG (1) SG149719A1 (enExample)
TW (1) TWI295949B (enExample)
WO (1) WO2005000527A2 (enExample)

Families Citing this family (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100465649B1 (ko) * 2002-09-17 2005-01-13 한국포리올 주식회사 일체형 연마 패드 및 그 제조 방법
JP2004303983A (ja) * 2003-03-31 2004-10-28 Fuji Photo Film Co Ltd 研磨パッド
EP1466699A1 (en) * 2003-04-09 2004-10-13 JSR Corporation Abrasive pad, method and metal mold for manufacturing the same, and semiconductor wafer polishing method
US20040209066A1 (en) * 2003-04-17 2004-10-21 Swisher Robert G. Polishing pad with window for planarization
KR100541545B1 (ko) * 2003-06-16 2006-01-11 삼성전자주식회사 화학기계적 연마 장비의 연마 테이블
US7435161B2 (en) * 2003-06-17 2008-10-14 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
JP2005007520A (ja) * 2003-06-19 2005-01-13 Nihon Micro Coating Co Ltd 研磨パッド及びその製造方法並びに研磨方法
US20040259479A1 (en) * 2003-06-23 2004-12-23 Cabot Microelectronics Corporation Polishing pad for electrochemical-mechanical polishing
US7654885B2 (en) * 2003-10-03 2010-02-02 Applied Materials, Inc. Multi-layer polishing pad
US8066552B2 (en) * 2003-10-03 2011-11-29 Applied Materials, Inc. Multi-layer polishing pad for low-pressure polishing
US6951803B2 (en) * 2004-02-26 2005-10-04 Taiwan Semiconductor Manufacturing Co., Ltd. Method to prevent passivation layer peeling in a solder bump formation process
US7059936B2 (en) * 2004-03-23 2006-06-13 Cabot Microelectronics Corporation Low surface energy CMP pad
US7204742B2 (en) * 2004-03-25 2007-04-17 Cabot Microelectronics Corporation Polishing pad comprising hydrophobic region and endpoint detection port
WO2005104199A1 (ja) * 2004-04-23 2005-11-03 Jsr Corporation 半導体ウエハ用研磨パッド及びこれを備える半導体ウエハ用研磨複層体並びに半導体ウエハの研磨方法
US7252871B2 (en) * 2004-06-16 2007-08-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad having a pressure relief channel
US7189156B2 (en) * 2004-08-25 2007-03-13 Jh Rhodes Company, Inc. Stacked polyurethane polishing pad and method of producing the same
US20060089095A1 (en) 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089093A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089094A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
JP2006346805A (ja) * 2005-06-15 2006-12-28 Toyo Tire & Rubber Co Ltd 積層研磨パッド
TWI378844B (en) * 2005-08-18 2012-12-11 Rohm & Haas Elect Mat Polishing pad and method of manufacture
TW200709892A (en) * 2005-08-18 2007-03-16 Rohm & Haas Elect Mat Transparent polishing pad
US20070111644A1 (en) * 2005-09-27 2007-05-17 Spencer Preston Thick perforated polishing pad and method for making same
JP2007307885A (ja) * 2005-11-04 2007-11-29 Ricoh Co Ltd 画像処理方法、記録物、プログラム、画像処理装置、画像形成装置及び画像形成システム、画像形成方法及びインク
KR100741984B1 (ko) * 2006-02-17 2007-07-23 삼성전자주식회사 화학기계적 연마 장치의 연마 패드 및 그의 제조방법
US20070212979A1 (en) * 2006-03-09 2007-09-13 Rimpad Tech Ltd. Composite polishing pad
JP5033356B2 (ja) * 2006-05-31 2012-09-26 ニッタ・ハース株式会社 研磨パッド
JP5033357B2 (ja) * 2006-05-31 2012-09-26 ニッタ・ハース株式会社 研磨パッド
JP5022635B2 (ja) * 2006-05-31 2012-09-12 ニッタ・ハース株式会社 研磨パッド
JP5371251B2 (ja) * 2007-01-30 2013-12-18 東レ株式会社 研磨パッド
JP2008221367A (ja) * 2007-03-09 2008-09-25 Toyo Tire & Rubber Co Ltd 研磨パッド
US8087975B2 (en) * 2007-04-30 2012-01-03 San Fang Chemical Industry Co., Ltd. Composite sheet for mounting a workpiece and the method for making the same
US20080274674A1 (en) * 2007-05-03 2008-11-06 Cabot Microelectronics Corporation Stacked polishing pad for high temperature applications
TWI411495B (zh) * 2007-08-16 2013-10-11 Cabot Microelectronics Corp 拋光墊
JP5078527B2 (ja) * 2007-09-28 2012-11-21 富士紡ホールディングス株式会社 研磨布
US8491360B2 (en) * 2007-10-26 2013-07-23 Innopad, Inc. Three-dimensional network in CMP pad
CN102089122A (zh) * 2008-05-15 2011-06-08 3M创新有限公司 具有终点窗口的抛光垫以及使用其的系统和方法
WO2009139401A1 (ja) * 2008-05-16 2009-11-19 東レ株式会社 研磨パッド
US7645186B1 (en) 2008-07-18 2010-01-12 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad manufacturing assembly
US7820005B2 (en) * 2008-07-18 2010-10-26 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multilayer chemical mechanical polishing pad manufacturing process
JP5222070B2 (ja) * 2008-09-17 2013-06-26 富士紡ホールディングス株式会社 研磨パッド
US8083570B2 (en) * 2008-10-17 2011-12-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad having sealed window
TWI465315B (zh) * 2008-11-12 2014-12-21 Bestac Advanced Material Co Ltd 可導電之拋光墊及其製造方法
TWI370758B (en) * 2008-12-15 2012-08-21 Bestac Advanced Material Co Ltd Method for making polishing pad
US8192249B2 (en) * 2009-03-12 2012-06-05 Hitachi Global Storage Technologies Netherlands, B.V. Systems and methods for polishing a magnetic disk
TWM367052U (en) 2009-04-24 2009-10-21 Bestac Advanced Material Co Ltd Polishing pad and polishing device
KR101352235B1 (ko) * 2009-05-27 2014-01-15 로저스코포레이션 연마 패드, 이를 위한 폴리우레탄층, 및 규소 웨이퍼의 연마 방법
DE102009030297B3 (de) * 2009-06-24 2011-01-20 Siltronic Ag Verfahren zum Polieren einer Halbleiterscheibe
US9017140B2 (en) 2010-01-13 2015-04-28 Nexplanar Corporation CMP pad with local area transparency
TWI510328B (zh) * 2010-05-03 2015-12-01 Iv Technologies Co Ltd 基底層、包括此基底層的研磨墊及研磨方法
US9156124B2 (en) 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate
TWI481470B (zh) * 2010-10-13 2015-04-21 San Fang Chemical Industry Co 吸附墊片及其製造方法
US8357446B2 (en) * 2010-11-12 2013-01-22 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Hollow polymeric-silicate composite
US20130237136A1 (en) * 2010-11-18 2013-09-12 Cabot Microelectronics Corporation Polishing pad comprising transmissive region
US20120302148A1 (en) 2011-05-23 2012-11-29 Rajeev Bajaj Polishing pad with homogeneous body having discrete protrusions thereon
DE102011114750A1 (de) 2011-09-29 2013-04-04 Giesecke & Devrient Gmbh Verfahren zur Herstellung eines Mikrostrukturträgers
DE102011115125B4 (de) 2011-10-07 2021-10-07 Giesecke+Devrient Currency Technology Gmbh Herstellung einer mikrooptischen Darstellungsanordnung
US9067298B2 (en) 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with grooved foundation layer and polishing surface layer
US9067297B2 (en) * 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with foundation layer and polishing surface layer
KR101819539B1 (ko) * 2011-11-29 2018-01-17 캐보트 마이크로일렉트로닉스 코포레이션 기초 레이어 및 연마면 레이어를 가진 연마 패드
JP5893413B2 (ja) * 2012-01-17 2016-03-23 東洋ゴム工業株式会社 積層研磨パッドの製造方法
US10722997B2 (en) * 2012-04-02 2020-07-28 Thomas West, Inc. Multilayer polishing pads made by the methods for centrifugal casting of polymer polish pads
US10022842B2 (en) 2012-04-02 2018-07-17 Thomas West, Inc. Method and systems to control optical transmissivity of a polish pad material
TWI671161B (zh) 2012-04-02 2019-09-11 美商湯瑪士衛斯有限公司 用於離心鑄造聚合物拋光墊之方法及系統及由該方法製得之拋光墊
US9156125B2 (en) 2012-04-11 2015-10-13 Cabot Microelectronics Corporation Polishing pad with light-stable light-transmitting region
US9597769B2 (en) * 2012-06-04 2017-03-21 Nexplanar Corporation Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer
JP2014113644A (ja) * 2012-12-06 2014-06-26 Toyo Tire & Rubber Co Ltd 研磨パッド
US9186772B2 (en) 2013-03-07 2015-11-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with broad spectrum, endpoint detection window and method of polishing therewith
EP3036759A4 (en) * 2013-08-22 2017-05-31 Cabot Microelectronics Corporation Polishing pad with porous interface and solid core, and related apparatus and methods
TWI556910B (zh) 2013-10-01 2016-11-11 三芳化學工業股份有限公司 複合硏磨墊及其製造方法
SG11201606734RA (en) * 2014-02-20 2016-09-29 Thomas West Inc Method and systems to control optical transmissivity of a polish pad material
CN106575613B (zh) * 2014-05-07 2019-12-17 嘉柏微电子材料股份公司 用于化学机械抛光的多层抛光垫
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
KR102436416B1 (ko) 2014-10-17 2022-08-26 어플라이드 머티어리얼스, 인코포레이티드 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 ｃｍｐ 패드 구성
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
JP7066608B2 (ja) * 2015-09-25 2022-05-13 シーエムシー マテリアルズ，インコーポレイティド 化学機械的研磨パッド、基板を化学機械的に研磨する方法、及び化学機械的研磨パッドを製造する方法
CN105364731B (zh) * 2015-09-28 2020-11-03 沈阳市盛世磨料磨具有限公司 一种重负荷砂轮的加工方法
CN112045556B (zh) * 2015-10-16 2022-06-28 应用材料公司 使用增材制造工艺形成先进抛光垫的方法和设备
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10213894B2 (en) * 2016-02-26 2019-02-26 Applied Materials, Inc. Method of placing window in thin polishing pad
DE102016222063A1 (de) 2016-11-10 2018-05-17 Siltronic Ag Verfahren zum beidseitigen Polieren einer Halbleiterscheibe
US11072050B2 (en) * 2017-08-04 2021-07-27 Applied Materials, Inc. Polishing pad with window and manufacturing methods thereof
KR101924566B1 (ko) * 2017-09-04 2018-12-03 에스케이씨 주식회사 고단차 제거용 다층 연마패드
KR102718259B1 (ko) * 2019-07-23 2024-10-16 케이피엑스케미칼 주식회사 탄성 패드 및 그 제조 방법
JP7105334B2 (ja) * 2020-03-17 2022-07-22 エスケーシー ソルミックス カンパニー，リミテッド 研磨パッドおよびこれを用いた半導体素子の製造方法
TWI879629B (zh) * 2021-07-06 2025-04-01 美商應用材料股份有限公司 用於化學機械拋光之包含聲學窗口的拋光墊、包含其之化學機械拋光設備及製造其之方法
TR2021017346A2 (tr) 2021-11-08 2021-11-22 T C Erciyes Ueniversitesi Rezonans hasarlarini önleyen, öngeri̇lmesi̇z ve etri̇yesi̇z, yekpare, sürdürülebi̇li̇r beton travers
CN117381657B (zh) * 2023-10-30 2025-10-17 安徽禾臣新材料有限公司 一种高孔隙率高模量抛光层的抛光垫及其制备方法
CN118650542A (zh) * 2024-06-03 2024-09-17 陈湛 一种碳化硅抛光的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000071167A (ja) * 1998-08-28 2000-03-07 Toray Ind Inc 研磨パッド
KR20010006518A (ko) * 1997-04-18 2001-01-26 매튜 네빌 반도체 기판용 연마 패드
KR20010023046A (ko) * 1997-08-19 2001-03-26 린치 마이클 엘. 반도체 웨이퍼의 화학 기계식 연마에서의 종점 검출방법 및 검출장치
KR20040025989A (ko) * 2002-09-17 2004-03-27 한국포리올 주식회사 일체형 연마 패드 및 그 제조 방법

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504457A (en) * 1966-07-05 1970-04-07 Geoscience Instr Corp Polishing apparatus
US3581439A (en) * 1968-04-04 1971-06-01 Geoscience Instr Corp Buff apparatus and method of manufacturing buffs
US5257478A (en) * 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5605760A (en) * 1995-08-21 1997-02-25 Rodel, Inc. Polishing pads
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US5692950A (en) * 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US6475253B2 (en) * 1996-09-11 2002-11-05 3M Innovative Properties Company Abrasive article and method of making
US6328642B1 (en) * 1997-02-14 2001-12-11 Lam Research Corporation Integrated pad and belt for chemical mechanical polishing
US6287185B1 (en) * 1997-04-04 2001-09-11 Rodel Holdings Inc. Polishing pads and methods relating thereto
US6108091A (en) * 1997-05-28 2000-08-22 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
US6117000A (en) * 1998-07-10 2000-09-12 Cabot Corporation Polishing pad for a semiconductor substrate
US6908374B2 (en) * 1998-12-01 2005-06-21 Nutool, Inc. Chemical mechanical polishing endpoint detection
JP2002535843A (ja) * 1999-01-21 2002-10-22 ロデール ホールディングス インコーポレイテッド 改良された研磨パッド、及び、これに関連する方法
US6089963A (en) * 1999-03-18 2000-07-18 Inland Diamond Products Company Attachment system for lens surfacing pad
WO2000060650A1 (en) * 1999-03-31 2000-10-12 Nikon Corporation Polishing body, polisher, method for adjusting polisher, method for measuring thickness of polished film or end point of polishing, method for producing semiconductor device
US6224460B1 (en) * 1999-06-30 2001-05-01 Vlsi Technology, Inc. Laser interferometry endpoint detection with windowless polishing pad for chemical mechanical polishing process
US6171181B1 (en) * 1999-08-17 2001-01-09 Rodel Holdings, Inc. Molded polishing pad having integral window
US6524164B1 (en) * 1999-09-14 2003-02-25 Applied Materials, Inc. Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus
US6358130B1 (en) * 1999-09-29 2002-03-19 Rodel Holdings, Inc. Polishing pad
JP2001162510A (ja) * 1999-09-30 2001-06-19 Hoya Corp 研磨方法並びに磁気記録媒体用ガラス基板の製造方法及び磁気記録媒体の製造方法
EP1212171A1 (en) * 1999-12-23 2002-06-12 Rodel Holdings, Inc. Self-leveling pads and methods relating thereto
DE10004578C1 (de) * 2000-02-03 2001-07-26 Wacker Siltronic Halbleitermat Verfahren zur Herstellung einer Halbleiterscheibe mit polierter Kante
JP2001319901A (ja) * 2000-05-08 2001-11-16 Nikon Corp 研磨パッド、化学機械研磨装置、基板表面の平坦化方法、及び半導体デバイス製造方法
US6428386B1 (en) 2000-06-16 2002-08-06 Micron Technology, Inc. Planarizing pads, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies
JP2002001647A (ja) * 2000-06-19 2002-01-08 Rodel Nitta Co 研磨パッド
JP3788729B2 (ja) * 2000-08-23 2006-06-21 東洋ゴム工業株式会社 研磨パッド
JP2002124496A (ja) * 2000-10-18 2002-04-26 Hitachi Ltd 研磨加工の終点検出計測方法及びその装置、並びにそれを用いた半導体デバイスの製造方法及びその製造装置
JP2002170799A (ja) * 2000-11-30 2002-06-14 Nikon Corp 測定装置、研磨状況モニタ装置、研磨装置、半導体デバイス製造方法、並びに半導体デバイス
JP2002178257A (ja) * 2000-12-12 2002-06-25 Nikon Corp 研磨面観測装置及び研磨装置
US6632129B2 (en) * 2001-02-15 2003-10-14 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
US6544107B2 (en) * 2001-02-16 2003-04-08 Agere Systems Inc. Composite polishing pads for chemical-mechanical polishing
JP2003133270A (ja) * 2001-10-26 2003-05-09 Jsr Corp 化学機械研磨用窓材及び研磨パッド
US6722249B2 (en) * 2001-11-06 2004-04-20 Rodel Holdings, Inc Method of fabricating a polishing pad having an optical window
JP2003220550A (ja) * 2002-01-24 2003-08-05 Sumitomo Bakelite Co Ltd 研磨用パッドおよびその製造方法
US6524176B1 (en) * 2002-03-25 2003-02-25 Macronix International Co. Ltd. Polishing pad
US6913517B2 (en) * 2002-05-23 2005-07-05 Cabot Microelectronics Corporation Microporous polishing pads
JP2005001083A (ja) * 2003-06-13 2005-01-06 Sumitomo Bakelite Co Ltd 研磨用積層体および研磨方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010006518A (ko) * 1997-04-18 2001-01-26 매튜 네빌 반도체 기판용 연마 패드
KR20010023046A (ko) * 1997-08-19 2001-03-26 린치 마이클 엘. 반도체 웨이퍼의 화학 기계식 연마에서의 종점 검출방법 및 검출장치
JP2000071167A (ja) * 1998-08-28 2000-03-07 Toray Ind Inc 研磨パッド
KR20040025989A (ko) * 2002-09-17 2004-03-27 한국포리올 주식회사 일체형 연마 패드 및 그 제조 방법

Also Published As

Publication number Publication date
ATE416881T1 (de) 2008-12-15
KR20060023562A (ko) 2006-03-14
EP1651388B1 (en) 2008-12-10
WO2005000527A2 (en) 2005-01-06
CN100591483C (zh) 2010-02-24
CN1805826A (zh) 2006-07-19
JP2006527923A (ja) 2006-12-07
EP1651388A2 (en) 2006-05-03
US6884156B2 (en) 2005-04-26
WO2005000527A3 (en) 2005-06-02
DE602004018321D1 (de) 2009-01-22
MY134466A (en) 2007-12-31
TW200513348A (en) 2005-04-16
SG149719A1 (en) 2009-02-27
US20040259484A1 (en) 2004-12-23
EP2025469B1 (en) 2013-05-01
JP5090732B2 (ja) 2012-12-05
EP2025469A1 (en) 2009-02-18
TWI295949B (en) 2008-04-21

Similar Documents

Publication Publication Date Title
KR101109367B1 (ko) Ｃｍｐ용 다층 연마 패드 재료
KR101281982B1 (ko) Ｃｍｐ용 다층 연마 패드 재료
KR100936594B1 (ko) 오목한 창을 구비한 폴리싱 패드
KR101109324B1 (ko) 미세다공성 영역을 갖는 연마 패드
KR101195276B1 (ko) 소수성 영역 및 종말점 검출구를 포함하는 연마 패드
JP4908207B2 (ja) 光透過領域を有する研磨パッドを製造するための超音波溶接法
CN100562402C (zh) 低表面能的化学机械抛光垫
US20050153634A1 (en) Negative poisson's ratio material-containing CMP polishing pad
KR20060127221A (ko) 성분이 충전된 공극을 갖는 ｃｍｐ 다공성 패드
EP3140852B1 (en) Multi-layer polishing pad for cmp

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20051216

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20090529

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20110318

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20111123

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20120117

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20120117

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20141218

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20141218

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20151224

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20151224

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20161228

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20161228

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20180102

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20180102

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20190103

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20190103

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20211229

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20221221

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20231227

Start annual number: 13

End annual number: 13

PC1801 Expiration of term

Termination date: 20241203

Termination category: Expiration of duration