JP5022635B2 - 研磨パッド - Google Patents
研磨パッド Download PDFInfo
- Publication number
- JP5022635B2 JP5022635B2 JP2006152883A JP2006152883A JP5022635B2 JP 5022635 B2 JP5022635 B2 JP 5022635B2 JP 2006152883 A JP2006152883 A JP 2006152883A JP 2006152883 A JP2006152883 A JP 2006152883A JP 5022635 B2 JP5022635 B2 JP 5022635B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- layer
- hole
- polishing pad
- polishing layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000005498 polishing Methods 0.000 title claims description 284
- 239000010410 layer Substances 0.000 claims description 193
- 239000012790 adhesive layer Substances 0.000 claims description 51
- 239000000853 adhesive Substances 0.000 claims description 8
- 230000001070 adhesive effect Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 3
- 239000002002 slurry Substances 0.000 description 25
- 239000000463 material Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 10
- 239000006260 foam Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000004745 nonwoven fabric Substances 0.000 description 5
- 239000006061 abrasive grain Substances 0.000 description 4
- -1 acryl Chemical group 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 229920002635 polyurethane Polymers 0.000 description 3
- 239000004814 polyurethane Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 239000004945 silicone rubber Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000003522 acrylic cement Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000004088 foaming agent Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012510 hollow fiber Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Images
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
Mechanical Polishing:CMP)によるシリコンウエハなどの被研磨物の平坦化処理に用いる研磨パッドに関する。
前記研磨層を支持する下地層と、
前記研磨層と前記下地層とを粘着させる粘着層とを有し、
前記研磨層は、中央部に貫通孔が形成され、
前記粘着層は、前記研磨層の外周で外囲される領域の全面に配置されることを特徴とする研磨パッドである。
前記貫通孔を臨む内壁部は、前記研磨層の厚み方向に平行な断面形状がテーパ状であることを特徴とする。
研磨層13を形成する樹脂を硬化剤などの添加物とともに金型に注入し、所定の温度により硬化させて成型体を得た後、その成型体をスライスすることによって、研磨層13が得られる。その後、得られた研磨層13に、貫通孔16を形成させる。そして、研磨層13と下地層14とを粘着層15を介して貼り付けることによって、研磨パッド1が得られる。
Adhesive)テープおよびフォームテープなどの両面テープなどが挙げられる。
研磨層13:ポリウレタン製研磨パッド、厚み1.27mm
下地層14:樹脂を含浸した不織布、厚み1.27mm
粘着層15:ポリエチレンテレフタレートからなる樹脂フィルムの両面に、アクリル系粘着剤層を有する両面テープ
研磨層13に、貫通孔16が形成されていないこと以外、実施例1と同様である。
コンディショナ : ダイヤモンドドレッサー(KINIK社製)
スラリ : Si用スラリ(ヒュームドシリカ砥粒)(ニッタ・ハース社製)
定盤回転速度 : 60rpm
研磨ヘッド回転速度: 61rpm
研磨ヘッド荷重 : 10psi(0.7031kg/cm2)
スラリ供給量 : 100ml/分
研磨時間 : 連続60分間
12 被研磨物
13 研磨層
14 下地層
15 粘着層
16,46 貫通孔
21 CMP装置
22 定盤
23 研磨ヘッド
24 ドレッシング部
31 基材
32,33 粘着剤層
35 孔内部材
37 溝
Claims (3)
- 被研磨物と接触させて、前記被研磨物を研磨する研磨層と、
前記研磨層を支持する下地層と、
前記研磨層と前記下地層とを粘着させる粘着層とを有し、
前記研磨層は、中央部に貫通孔が形成され、
前記粘着層は、前記研磨層の外周で外囲される領域の全面に配置されることを特徴とする研磨パッド。 - 前記粘着層は、基材の両面に、粘着剤を含む粘着剤層を有することを特徴とする請求項1記載の研磨パッド。
- 前記貫通孔は、前記粘着層と接する前記研磨層の一表面に臨む開口が、前記一表面とは反対側の他表面に臨む開口よりも小さく、
前記貫通孔を臨む内壁部は、前記研磨層の厚み方向に平行な断面形状がテーパ状であることを特徴とする請求項1または2記載の研磨パッド。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006152883A JP5022635B2 (ja) | 2006-05-31 | 2006-05-31 | 研磨パッド |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006152883A JP5022635B2 (ja) | 2006-05-31 | 2006-05-31 | 研磨パッド |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007319979A JP2007319979A (ja) | 2007-12-13 |
| JP5022635B2 true JP5022635B2 (ja) | 2012-09-12 |
Family
ID=38853195
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006152883A Active JP5022635B2 (ja) | 2006-05-31 | 2006-05-31 | 研磨パッド |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5022635B2 (ja) |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06182670A (ja) * | 1992-12-17 | 1994-07-05 | Dainippon Printing Co Ltd | 研磨テープ |
| JPH1177515A (ja) * | 1997-09-10 | 1999-03-23 | Toshiba Mach Co Ltd | 平面研磨装置及び研磨装置に用いる研磨布 |
| US6287174B1 (en) * | 1999-02-05 | 2001-09-11 | Rodel Holdings Inc. | Polishing pad and method of use thereof |
| JP2001219364A (ja) * | 2000-02-04 | 2001-08-14 | Hitachi Ltd | 研磨パッド及び研磨方法及び研磨パッドを用いた加工物の製造方法 |
| JP2002343748A (ja) * | 2001-05-14 | 2002-11-29 | Nikon Corp | 研磨装置、この研磨装置を用いた半導体デバイス製造方法及びこの半導体デバイス製造方法により製造された半導体デバイス |
| JP4131632B2 (ja) * | 2001-06-15 | 2008-08-13 | 株式会社荏原製作所 | ポリッシング装置及び研磨パッド |
| JP2003103470A (ja) * | 2001-09-28 | 2003-04-08 | Dainippon Printing Co Ltd | 研磨層に凹部を有する研磨シート |
| US6722249B2 (en) * | 2001-11-06 | 2004-04-20 | Rodel Holdings, Inc | Method of fabricating a polishing pad having an optical window |
| JP2004189846A (ja) * | 2002-12-10 | 2004-07-08 | Sekisui Chem Co Ltd | 研磨材固定用両面粘着テープ |
| US6884156B2 (en) * | 2003-06-17 | 2005-04-26 | Cabot Microelectronics Corporation | Multi-layer polishing pad material for CMP |
| KR20050112711A (ko) * | 2004-05-28 | 2005-12-01 | 이민철 | 유리제품 초고속 광택기구 |
-
2006
- 2006-05-31 JP JP2006152883A patent/JP5022635B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007319979A (ja) | 2007-12-13 |
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