US3504457A - Polishing apparatus - Google Patents

Polishing apparatus Download PDF

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US3504457A
US3504457A US562757A US3504457DA US3504457A US 3504457 A US3504457 A US 3504457A US 562757 A US562757 A US 562757A US 3504457D A US3504457D A US 3504457DA US 3504457 A US3504457 A US 3504457A
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polishing
corfam
layer
porous
organization
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US562757A
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Hans R Jacobsen
Elmer W Jensen
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Geoscience Instruments Corp
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Geoscience Instruments Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
    • B24D7/02—Wheels in one piece

Definitions

  • a device for polishing semiconductor wafers wherein the polishing tool comprises a poromeric material of polyurethane reinforced with a polyester and with a polishing slurry thereon is urged into contact with the workpiece.
  • This invention relates to an apparatus for processing workpieces and, more specifically for imparting a polished finish to elements subjected thereto.
  • the surface of the lapping plate in contact with the semiconductor elements has typically included thereon -as the active polishing member a pitch composition, papers, pseudo papers or other nonwovens, or felt substances.
  • the above and other prior art operative polishing surfaces are characterized by at least several of the following deficiencies: (1) temperature sensitivity, and therefore instability at high polishing rates; (2) unhomogeneous consistency; (3) a propensity to pick up and retain foreign elements; (4) poor wear characteristics requiring frequent replacement; (5) variations from sample to sample; (6) the characteristics of being impermeable, and thereby preventing a polishing slurry from reaching all surface areas of a product being operated upon; (7) relatively little tensile strength, thereby being subject to distortion; and (8) a resistance to bonding, thereby being difiicult to affix to cooperating compositions and/or a lapping plate.
  • an object of the present invention is the provision of a resilient, homogeneous polishing organization which is porous, relatively insensitive to temperature, and which may be fabricated with little variation from sample to sample.
  • a specific illustrative polishing organization which comprises a layer of Corfam (a trademark of the Du Pont Corporation for a poromeric material) afiixed to a lapping substrate via layers of an adhesive, chemically inert nitrile rubber, and a pressure sensitive, clean release adhesive.
  • a pororneric material such as Du Ponts Corfam, comprises polyurethane reinforced with polyester.
  • the active, or free Corfam surface is adapted to be fiat such that the surface of the work elements brought into rotational bearing contact therewith will be polished, i.e., will be rendered flat.
  • a porous film e.g., of foam polyurethane, is attached to the Corfam to function as the active polishing surface.
  • the arrangement includes a layer of Corfam 20 which has a layer 35 of a, chemically inert material, eg., nitrile rubber, afiixed thereto by an adhesive 30.
  • a layer 40 ⁇ of a pressure sensitive, clean release adhesive 40 is bonded to the bottom of the nitrile rubber layer 35 for purposes of facilitating the attachment and removal of the composite polishing laminated structure with respect to a metal lapping substrate 45.
  • poromeric materials as well as other compositions embodying the attributes of Corfam described herein, may be employed in place of the Corfam layer 20.
  • the Corfam layer 20 is fabricated such that the upper surface thereof exhibits the requisite flatness required for a particular polishing operation (assuming that a fiat surface is desired for the workpiece), Employing such a layer 20,the lapping substrate 45 is urged into a bearing pressure contact with elements 15 to be polished.
  • elements 15 may comprise, for example, semiconductor wafers, with these elements being shown in the drawing as mounted on a rotating mounting block 10.
  • the polishing operation may advantageously take place in a polishing liquid slurry environment, with the slurry being supplied by a slurry source 50 via a nozzle 51.
  • the Corfam material 20 is very porous, and hence the slurry is translated by the layer 20 to all portions of the surface of the elements 15 thereby effecting uniform polishing. Also, the Corfam material 20 is essentially insensitive to temperature, at least in the temperature range of interest for polishing operations. Accordingly, polishing may be accomplished at high rates of speed. Further, the layer 20 is homogeneous, and may be fabricated in relatively large quantities to produce many uniform polishing layers without material variation from element to element.
  • Corfam is resilient and prevents damage to elements 15 being polished by absorbing mechanical vibrations and any compaction caused by overshoot of the mounting members 10 or 45.
  • the layer 20 is durable which is beneficial from maintenance and batch processing rate standpoints.
  • the active, upper surface of the Corfam layer 20 can be treated or impregnated when required for special polishing operations.
  • treatment may comprise, for example, brushing, napping, skiving or texturing the polishing Corfam surface to increase the number for active polishing fibers, or calendering the surface to increase its atness.
  • the composite laminated polishing organization 20-30- 35-40 is easily attached to, and removed from the lapping substrate 45 by reason of the properties of the pressure sensitive, clean release adhesive layer 40.
  • the inert layer 35 is employed to insulate the adhesive 40 from the layers thereabove, and also from the slurry which would otherwise reach the adhesive I40 through the porous Corfam layer 20. Such lforeign substances would tend to change the physical state of the adhesive 40, e.g., harden it thereby making attachment to and removal from the plate 45 more difficult.
  • the upper face of the film 23 is the effective polishing surface, with the Corfam backing layer 20 providing resiliency and strength, while maintaining a composite porous organization which is desirable in a polishing organization for the reasons given hereinabove.
  • compositions 4 which are porous only in film thicknesses, but which otherwise have desirable polishing properties, may be used as a polishing surface when mounted on a Corfam backing layer 20.
  • the active polishing surface i.e., the upper surface of the Corfam 20 or the lm 23 if such a lm is employed, may exhibit a geometry other than a at plane -when a nonat work piece of a corresponding geometry is to be polished.
  • other known bonding mechanisms such as mechanical interlocking or distortion, may be used to fabricate the composite laminated polishing structure shown in the drawing vwithout the use of the adhesives 25 and 30.
  • a poromeric material comprising polyurethane reinforced with polyester, a porous film axed to said poromeric material, wherein said poromeric material has rst and second surfaces, said rst surface engaging said porous hlm, and further comprising an inert layer of nitrile rubber I affixed to said second surface of said Corfam.
  • a poromeric material comprising polyurethane reinforced with polyester, a porous hlm aixed to said poromeric material, Iwherein said porous lm is polyurethane, and means for selectively urging work pieces to be polished into bearing contact with said porous film.
  • a lapping substrate a poromeric layer comprising polyurethane reinforced with polyester mounted on said substrate, said poromeric layer including a polishing surface thereon, and means for urging work pieces to be polished into bearing contact with said poromeric polishing surface.

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Laminated Bodies (AREA)

Description

April 7, 1970 H, R, JACOBSEN ET AL 3,504,457
POLISHING APPARATUS Filed July 5, 1966 40W iy//5/ BEAR/NG CON 754C 7' (IRG/N6 MF4/V5 INVENTORS HANS REM/#0107' .fS/V B52/.MER M JENSEN 2@ @Mge ys.
United States Patent O York Filed July 5, 1966, Ser. No. 562,757 Int. Cl. B24b 5/00, 29/00, 11/00 U.S. Cl. 51-131 4 Claims ABSTRACT OF THE DISCLOSURE A device for polishing semiconductor wafers wherein the polishing tool comprises a poromeric material of polyurethane reinforced with a polyester and with a polishing slurry thereon is urged into contact with the workpiece.
This invention relates to an apparatus for processing workpieces and, more specifically for imparting a polished finish to elements subjected thereto.
Many applications of present day interest require thin, fragile semiconductor wafers having a highly polished critical surface. To produce such a finish, prior art organizations have rotated such semiconductor elements against a lapping substrate in the presence of a polishing slurry.
The surface of the lapping plate in contact with the semiconductor elements has typically included thereon -as the active polishing member a pitch composition, papers, pseudo papers or other nonwovens, or felt substances. However, the above and other prior art operative polishing surfaces are characterized by at least several of the following deficiencies: (1) temperature sensitivity, and therefore instability at high polishing rates; (2) unhomogeneous consistency; (3) a propensity to pick up and retain foreign elements; (4) poor wear characteristics requiring frequent replacement; (5) variations from sample to sample; (6) the characteristics of being impermeable, and thereby preventing a polishing slurry from reaching all surface areas of a product being operated upon; (7) relatively little tensile strength, thereby being subject to distortion; and (8) a resistance to bonding, thereby being difiicult to affix to cooperating compositions and/or a lapping plate.
It is therefore an object of the present invention to provide an improved apparatus for polishing workpieces.
More specifically, an object of the present invention is the provision of a resilient, homogeneous polishing organization which is porous, relatively insensitive to temperature, and which may be fabricated with little variation from sample to sample.
These and other objects of the present invention are realized in a specific illustrative polishing organization which comprises a layer of Corfam (a trademark of the Du Pont Corporation for a poromeric material) afiixed to a lapping substrate via layers of an adhesive, chemically inert nitrile rubber, and a pressure sensitive, clean release adhesive. A pororneric material, such as Du Ponts Corfam, comprises polyurethane reinforced with polyester. In this regard see, for example, Chemistry of Organic Compounds by C. R. Noller, published by W. B. Saunders Company in 1965, at chapter 36.
The active, or free Corfam surface is adapted to be fiat such that the surface of the work elements brought into rotational bearing contact therewith will be polished, i.e., will be rendered flat. In an alternative embodiment of the present invention a porous film e.g., of foam polyurethane, is attached to the Corfam to function as the active polishing surface.
A complete understanding of the present invention and of the above and other objects thereof may be gained 3,504,457 Patented Apr. 7, 1970 from a consideration of an illustrative embodiment thereof depicted in the accompanying drawing.
Referring now to the drawing, there is shown in crosssectional form an illustrative polishing organization which embodies the principles of the present invention. The arrangement includes a layer of Corfam 20 which has a layer 35 of a, chemically inert material, eg., nitrile rubber, afiixed thereto by an adhesive 30. A layer 40` of a pressure sensitive, clean release adhesive 40 is bonded to the bottom of the nitrile rubber layer 35 for purposes of facilitating the attachment and removal of the composite polishing laminated structure with respect to a metal lapping substrate 45. It is noted that other poromeric materials, as well as other compositions embodying the attributes of Corfam described herein, may be employed in place of the Corfam layer 20.
The Corfam layer 20 is fabricated such that the upper surface thereof exhibits the requisite flatness required for a particular polishing operation (assuming that a fiat surface is desired for the workpiece), Employing such a layer 20,the lapping substrate 45 is urged into a bearing pressure contact with elements 15 to be polished. Such elements 15 may comprise, for example, semiconductor wafers, with these elements being shown in the drawing as mounted on a rotating mounting block 10. Further, the polishing operation may advantageously take place in a polishing liquid slurry environment, with the slurry being supplied by a slurry source 50 via a nozzle 51.
The Corfam material 20 is very porous, and hence the slurry is translated by the layer 20 to all portions of the surface of the elements 15 thereby effecting uniform polishing. Also, the Corfam material 20 is essentially insensitive to temperature, at least in the temperature range of interest for polishing operations. Accordingly, polishing may be accomplished at high rates of speed. Further, the layer 20 is homogeneous, and may be fabricated in relatively large quantities to produce many uniform polishing layers without material variation from element to element.
Moreover, Corfam is resilient and prevents damage to elements 15 being polished by absorbing mechanical vibrations and any compaction caused by overshoot of the mounting members 10 or 45. In addition, the layer 20 is durable which is beneficial from maintenance and batch processing rate standpoints.
Still further, the active, upper surface of the Corfam layer 20 can be treated or impregnated when required for special polishing operations. Such treatment may comprise, for example, brushing, napping, skiving or texturing the polishing Corfam surface to increase the number for active polishing fibers, or calendering the surface to increase its atness.
The composite laminated polishing organization 20-30- 35-40 is easily attached to, and removed from the lapping substrate 45 by reason of the properties of the pressure sensitive, clean release adhesive layer 40. The inert layer 35 is employed to insulate the adhesive 40 from the layers thereabove, and also from the slurry which would otherwise reach the adhesive I40 through the porous Corfam layer 20. Such lforeign substances would tend to change the physical state of the adhesive 40, e.g., harden it thereby making attachment to and removal from the plate 45 more difficult.
By way of -functional operation, when rotational bearing contact is established between the Corfam upper surface and the lwork pieces 15, the desired polishing surface is imparted to the lower, critical surface of these elements. Hence, the desired polishing is accomplished.
In an alternative embodiment of the invention a porous film 23, e.g., of foam polyurethane, is afiixed to the upper surface of the Corfam layer 20 by a porous adhesive 25. In such an arrangement, the upper face of the film 23 is the effective polishing surface, with the Corfam backing layer 20 providing resiliency and strength, while maintaining a composite porous organization which is desirable in a polishing organization for the reasons given hereinabove. Thus it is noted that compositions 4which are porous only in film thicknesses, but which otherwise have desirable polishing properties, may be used as a polishing surface when mounted on a Corfam backing layer 20.
Thus, the organization shown in the drawing, both with and without the film 23 and the adhesive 25, has been shown by the above to function as a very desirable polishing structure.
1t is to be understood that the above described method and organizations are only illustrative of the application of the principles of the present inventions. Numerous other arrangements and modes of operation may be devised by those skilled in the art without departing from the spirit and scope of this invention. For example, the active polishing surface, i.e., the upper surface of the Corfam 20 or the lm 23 if such a lm is employed, may exhibit a geometry other than a at plane -when a nonat work piece of a corresponding geometry is to be polished. In addition, other known bonding mechanisms, such as mechanical interlocking or distortion, may be used to fabricate the composite laminated polishing structure shown in the drawing vwithout the use of the adhesives 25 and 30.
We claim:
1. In combination in a polishing organization, a poromeric material comprising polyurethane reinforced with polyester, a porous film axed to said poromeric material, wherein said poromeric material has rst and second surfaces, said rst surface engaging said porous hlm, and further comprising an inert layer of nitrile rubber I affixed to said second surface of said Corfam.
plate, and means for selectively urging work pieces to be polished into a bearing relationship with said lapping plate.
3. In combination in a polishing organization, a poromeric material comprising polyurethane reinforced with polyester, a porous hlm aixed to said poromeric material, Iwherein said porous lm is polyurethane, and means for selectively urging work pieces to be polished into bearing contact with said porous film.
4. In combination in a polishing organization, a lapping substrate, a poromeric layer comprising polyurethane reinforced with polyester mounted on said substrate, said poromeric layer including a polishing surface thereon, and means for urging work pieces to be polished into bearing contact with said poromeric polishing surface.
References Cited UNITED STATES PATENTS 2,644,280 7 l 95 3 ONeil 51-406 3,050,909 8/ 1962 Rawstron 51-124 3,082,582 3/1963 Jeske 51-407 X 3,123,953 3/1964 Merkl 51-283 3,360,889 1/1968 Borish 51-131 X 671,130 4/1901 Darden 51-401 804,853 11/1905 Ireson. 1,923,719 8/1933 Fuller 51-301 X 2,650,158 8/1953 Eastman 51-407 X FOREIGN PATENTS 681,832 3/1964 Canada.
OTHER REFERENCES Boot and 'Shoe Recorder, Oct. l, 1963, article titled The Story of Corfam pages 1-2 thereof.
HAROLD D. WHITEHEAD, Primary Examiner U.'S. C1. XR.
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Cited By (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3841031A (en) * 1970-10-21 1974-10-15 Monsanto Co Process for polishing thin elements
US3857123A (en) * 1970-10-21 1974-12-31 Monsanto Co Apparatus for waxless polishing of thin wafers
US3947953A (en) * 1974-08-23 1976-04-06 Nitto Electric Industrial Co., Ltd. Method of making plastic sealed cavity molded type semi-conductor devices
US4728552A (en) * 1984-07-06 1988-03-01 Rodel, Inc. Substrate containing fibers of predetermined orientation and process of making the same
EP0291100A2 (en) * 1987-05-15 1988-11-17 Asahi Kasei Kogyo Kabushiki Kaisha Polishing cloth
EP0304645A2 (en) * 1987-08-25 1989-03-01 Rodel, Inc. Inverted cell pad material for grinding, lapping, shaping and polishing
US4841680A (en) * 1987-08-25 1989-06-27 Rodel, Inc. Inverted cell pad material for grinding, lapping, shaping and polishing
US4927432A (en) * 1986-03-25 1990-05-22 Rodel, Inc. Pad material for grinding, lapping and polishing
US4954141A (en) * 1988-01-28 1990-09-04 Showa Denko Kabushiki Kaisha Polishing pad for semiconductor wafers
WO1991014538A1 (en) * 1990-03-22 1991-10-03 Westech Systems, Inc. Apparatus for interlayer planarization of semiconductor material
EP0555660A2 (en) * 1992-01-31 1993-08-18 Westech, Inc. Apparatus for interlayer planarization of semiconductor material
US5403228A (en) * 1992-07-10 1995-04-04 Lsi Logic Corporation Techniques for assembling polishing pads for silicon wafer polishing
US5510175A (en) * 1993-06-30 1996-04-23 Chiyoda Co., Ltd. Polishing cloth
US5618227A (en) * 1992-09-18 1997-04-08 Mitsubushi Materials Corporation Apparatus for polishing wafer
US5649855A (en) * 1995-01-25 1997-07-22 Nec Corporation Wafer polishing device
US5664989A (en) * 1995-07-21 1997-09-09 Kabushiki Kaisha Toshiba Polishing pad, polishing apparatus and polishing method
US5692950A (en) * 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US5769699A (en) * 1993-04-30 1998-06-23 Motorola, Inc. Polishing pad for chemical-mechanical polishing of a semiconductor substrate
US5846335A (en) * 1994-06-28 1998-12-08 Ebara Corporation Method for cleaning workpiece
US5913712A (en) * 1995-08-09 1999-06-22 Cypress Semiconductor Corp. Scratch reduction in semiconductor circuit fabrication using chemical-mechanical polishing
US6036579A (en) * 1997-01-13 2000-03-14 Rodel Inc. Polymeric polishing pad having photolithographically induced surface patterns(s) and methods relating thereto
US6095902A (en) * 1998-09-23 2000-08-01 Rodel Holdings, Inc. Polyether-polyester polyurethane polishing pads and related methods
US6238592B1 (en) 1999-03-10 2001-05-29 3M Innovative Properties Company Working liquids and methods for modifying structured wafers suited for semiconductor fabrication
US6284114B1 (en) 1997-09-29 2001-09-04 Rodel Holdings Inc. Method of fabricating a porous polymeric material by electrophoretic deposition
US6336845B1 (en) 1997-11-12 2002-01-08 Lam Research Corporation Method and apparatus for polishing semiconductor wafers
US20020081956A1 (en) * 2000-09-08 2002-06-27 Applied Materials, Inc. Carrier head with vibration dampening
US6431959B1 (en) 1999-12-20 2002-08-13 Lam Research Corporation System and method of defect optimization for chemical mechanical planarization of polysilicon
US20020127862A1 (en) * 2001-03-08 2002-09-12 Cooper Richard D. Polishing pad for use in chemical - mechanical palanarization of semiconductor wafers and method of making same
EP1295680A2 (en) * 2001-09-25 2003-03-26 JSR Corporation Polishing pad for semiconductor wafer
US6626740B2 (en) 1999-12-23 2003-09-30 Rodel Holdings, Inc. Self-leveling pads and methods relating thereto
US20040055223A1 (en) * 2000-12-01 2004-03-25 Koichi Ono Polishing pad, method of manufacturing the polishing pad, and cushion layer for polishing pad
US20040072522A1 (en) * 2002-06-18 2004-04-15 Angela Petroski Gradient polishing pad made from paper-making fibers for use in chemical/mechanical planarization of wafers
US6746311B1 (en) * 2000-01-24 2004-06-08 3M Innovative Properties Company Polishing pad with release layer
US20040142638A1 (en) * 2003-01-22 2004-07-22 Angela Petroski Polishing pad for use in chemical - mechanical planarization of semiconductor wafers and method of making same
US20040142637A1 (en) * 2003-01-22 2004-07-22 Angela Petroski Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
US20040259484A1 (en) * 2003-06-17 2004-12-23 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US20050098446A1 (en) * 2003-10-03 2005-05-12 Applied Materials, Inc. Multi-layer polishing pad
US20050197050A1 (en) * 2003-06-17 2005-09-08 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US20050221723A1 (en) * 2003-10-03 2005-10-06 Applied Materials, Inc. Multi-layer polishing pad for low-pressure polishing
US20050245181A1 (en) * 2000-09-08 2005-11-03 Applied Materials, Inc. Vibration damping during chemical mechanical polishing
US20060046622A1 (en) * 2004-09-01 2006-03-02 Cabot Microelectronics Corporation Polishing pad with microporous regions
US20060148387A1 (en) * 2000-09-08 2006-07-06 Applied Materials, Inc., A Delaware Corporation Vibration damping in chemical mechanical polishing system
US20070049169A1 (en) * 2005-08-02 2007-03-01 Vaidya Neha P Nonwoven polishing pads for chemical mechanical polishing
US20070087177A1 (en) * 2003-10-09 2007-04-19 Guangwei Wu Stacked pad and method of use
US7618529B2 (en) 2004-05-25 2009-11-17 Rohm And Haas Electronic Materials Cmp Holdings, Inc Polishing pad for electrochemical mechanical polishing
US20110045753A1 (en) * 2008-05-16 2011-02-24 Toray Industries, Inc. Polishing pad
US20110269380A1 (en) * 2010-05-03 2011-11-03 Iv Technologies Co., Ltd. Base layer, polishing pad including the same and polishing method
US8092707B2 (en) 1997-04-30 2012-01-10 3M Innovative Properties Company Compositions and methods for modifying a surface suited for semiconductor fabrication
JP2016064453A (en) * 2014-09-24 2016-04-28 株式会社ディスコ Processing device and wafer processing method
US9960048B2 (en) 2013-02-13 2018-05-01 Showa Denko K.K. Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate

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CA681832A (en) * 1964-03-10 Dominion Rubber Company Flexible laminate
US3123953A (en) * 1964-03-10 merkl
US671130A (en) * 1900-05-02 1901-04-02 Newton J Darden Pencil-sharpener.
US804853A (en) * 1905-03-17 1905-11-21 Charles L Ireson Method of attachment of rubber and leather.
US1923719A (en) * 1931-04-27 1933-08-22 Gen Electric Stropping material
US2650158A (en) * 1950-08-03 1953-08-25 Carborundum Co Scouring implement
US2644280A (en) * 1950-09-13 1953-07-07 Carborundum Co Sanding disk accessory
US3050909A (en) * 1959-02-18 1962-08-28 Rawstron George Ormerod Apparatus for and method of polishing aspheric surfaces
US3082582A (en) * 1960-07-21 1963-03-26 Formax Mfg Corp Sanding pad assembly
US3360889A (en) * 1962-12-31 1968-01-02 Indiana Contact Lens Inc Method for altering the power of a corneal contact lens

Cited By (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3857123A (en) * 1970-10-21 1974-12-31 Monsanto Co Apparatus for waxless polishing of thin wafers
US3841031A (en) * 1970-10-21 1974-10-15 Monsanto Co Process for polishing thin elements
US3947953A (en) * 1974-08-23 1976-04-06 Nitto Electric Industrial Co., Ltd. Method of making plastic sealed cavity molded type semi-conductor devices
US4728552A (en) * 1984-07-06 1988-03-01 Rodel, Inc. Substrate containing fibers of predetermined orientation and process of making the same
US4927432A (en) * 1986-03-25 1990-05-22 Rodel, Inc. Pad material for grinding, lapping and polishing
EP0291100A2 (en) * 1987-05-15 1988-11-17 Asahi Kasei Kogyo Kabushiki Kaisha Polishing cloth
EP0291100A3 (en) * 1987-05-15 1990-12-19 Asahi Kasei Kogyo Kabushiki Kaisha Polishing cloth
EP0304645A2 (en) * 1987-08-25 1989-03-01 Rodel, Inc. Inverted cell pad material for grinding, lapping, shaping and polishing
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