KR101038479B1 - 극자외선 광원 - Google Patents

극자외선 광원 Download PDF

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Publication number
KR101038479B1
KR101038479B1 KR1020047016139A KR20047016139A KR101038479B1 KR 101038479 B1 KR101038479 B1 KR 101038479B1 KR 1020047016139 A KR1020047016139 A KR 1020047016139A KR 20047016139 A KR20047016139 A KR 20047016139A KR 101038479 B1 KR101038479 B1 KR 101038479B1
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KR
South Korea
Prior art keywords
high energy
energy photon
photon source
source
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020047016139A
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English (en)
Korean (ko)
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KR20040108718A (ko
Inventor
스티븐 티. 멜니츄크
윌리암 엔. 파르틀로
이고르 브이. 포멘코프
아이 로저 올리버
리차드 엠. 네스
노버트 보워링
올레 코디킨
커티스 엘. 레티그
게리 엠 브루멘스톡
티모시 에스. 다이어
로드니 디. 시몬스
저지 알. 호프만
알 마크 존슨
Original Assignee
사이머 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/120,655 external-priority patent/US6744060B2/en
Priority claimed from US10/189,824 external-priority patent/US6815700B2/en
Priority claimed from US10/384,967 external-priority patent/US6904073B2/en
Application filed by 사이머 인코포레이티드 filed Critical 사이머 인코포레이티드
Publication of KR20040108718A publication Critical patent/KR20040108718A/ko
Application granted granted Critical
Publication of KR101038479B1 publication Critical patent/KR101038479B1/ko
Assigned to 에이에스엠엘 네델란즈 비.브이. reassignment 에이에스엠엘 네델란즈 비.브이. 권리의 전부이전등록 Assignors: 사이머 엘엘씨
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70166—Capillary or channel elements, e.g. nested extreme ultraviolet [EUV] mirrors or shells, optical fibers or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G03F7/70175—Lamphouse reflector arrangements or collector mirrors, i.e. collecting light from solid angle upstream of the light source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/007—Production of X-ray radiation generated from plasma involving electric or magnetic fields in the process of plasma generation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation
    • H05G2/0094—Reduction, prevention or protection from contamination; Cleaning
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
    • H05H1/04—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using magnetic fields substantially generated by the discharge in the plasma
    • H05H1/06—Longitudinal pinch devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Public Health (AREA)
  • Chemical & Material Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Environmental & Geological Engineering (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020047016139A 2002-04-10 2003-04-09 극자외선 광원 Expired - Fee Related KR101038479B1 (ko)

Applications Claiming Priority (13)

Application Number Priority Date Filing Date Title
US10/120,655 US6744060B2 (en) 1997-05-12 2002-04-10 Pulse power system for extreme ultraviolet and x-ray sources
US10/120,655 2002-04-10
US10/189,824 US6815700B2 (en) 1997-05-12 2002-07-03 Plasma focus light source with improved pulse power system
US10/189,824 2002-07-03
US41980502P 2002-10-18 2002-10-18
US60/419,805 2002-10-18
US42280802P 2002-10-31 2002-10-31
US60/422,808 2002-10-31
US10/384,967 US6904073B2 (en) 2001-01-29 2003-03-08 High power deep ultraviolet laser with long life optics
US10/384,967 2003-03-08
US10/409,254 2003-04-08
US10/409,254 US6972421B2 (en) 2000-06-09 2003-04-08 Extreme ultraviolet light source
PCT/US2003/011139 WO2003087867A2 (en) 2002-04-10 2003-04-09 Extreme ultraviolet light source

Publications (2)

Publication Number Publication Date
KR20040108718A KR20040108718A (ko) 2004-12-24
KR101038479B1 true KR101038479B1 (ko) 2011-06-02

Family

ID=29741190

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020047016139A Expired - Fee Related KR101038479B1 (ko) 2002-04-10 2003-04-09 극자외선 광원

Country Status (6)

Country Link
US (4) US6972421B2 (https=)
EP (1) EP1493039A4 (https=)
JP (2) JP2005522839A (https=)
KR (1) KR101038479B1 (https=)
AU (1) AU2003230870A1 (https=)
WO (1) WO2003087867A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200017137A (ko) * 2018-08-08 2020-02-18 삼성전자주식회사 극자외선 생성 장치

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