JP5001055B2 - 極端紫外光源装置 - Google Patents
極端紫外光源装置 Download PDFInfo
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- JP5001055B2 JP5001055B2 JP2007111704A JP2007111704A JP5001055B2 JP 5001055 B2 JP5001055 B2 JP 5001055B2 JP 2007111704 A JP2007111704 A JP 2007111704A JP 2007111704 A JP2007111704 A JP 2007111704A JP 5001055 B2 JP5001055 B2 JP 5001055B2
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- 239000000463 material Substances 0.000 claims abstract description 61
- 150000002500 ions Chemical class 0.000 claims abstract description 51
- 238000002834 transmittance Methods 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 22
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052744 lithium Inorganic materials 0.000 claims description 9
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 230000005284 excitation Effects 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 230000003796 beauty Effects 0.000 claims 2
- 239000002245 particle Substances 0.000 abstract description 23
- 239000011248 coating agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 229910052724 xenon Inorganic materials 0.000 description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 9
- 230000007423 decrease Effects 0.000 description 8
- 239000010931 gold Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 239000013077 target material Substances 0.000 description 7
- 239000011651 chromium Substances 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000011084 recovery Methods 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000009191 jumping Effects 0.000 description 2
- 238000003380 quartz crystal microbalance Methods 0.000 description 2
- 230000005469 synchrotron radiation Effects 0.000 description 2
- 230000005457 Black-body radiation Effects 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- -1 xenon ion Chemical class 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70941—Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
- H05G2/006—X-ray radiation generated from plasma being produced from a liquid or gas details of the ejection system, e.g. constructional details of the nozzle
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05G—X-RAY TECHNIQUE
- H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
- H05G2/001—X-ray radiation generated from plasma
- H05G2/008—X-ray radiation generated from plasma involving a beam of energy, e.g. laser or electron beam in the process of exciting the plasma
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Environmental & Geological Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
図1は、本発明の第1の実施形態に係るEUV光源装置を示す側面図である。本実施形態に係るEUV光源装置は、レーザビームをターゲット物質に照射して励起させることによりEUV光を生成するレーザ励起プラズマ(LPP)方式を採用している。
図5は、遮蔽プレートにより構造物を覆う本発明の第2の実施形態に係るEUV光源装置の内部構造を示す概略図である。真空チャンバ内でプラズマに対して露出するコレクタミラーホルダ16や構造物100を覆うために、EUV光の透過率が高い材料で形成される遮蔽プレート22が設けられている。本実施形態においては、遮蔽プレート22の材料として、EUV光の透過率が高いシリコン(Si)が用いられるが、ジルコニウム(Zr)、モリブデン(Mo)、リチウム(Li)、又は、アルミニウム(Al)を用いても良く、それらの合金を用いても良い。
Claims (9)
- ドライバレーザによって生成されるレーザビームをターゲットに照射することにより、プラズマから極端紫外光を発生する極端紫外光源装置であって、
極端紫外光の生成が行われるチャンバと、
前記チャンバ内の所定の位置にターゲットを供給するターゲット供給部と、
前記チャンバ内に設置され、反射面に多層膜を有し、プラズマから放射される極端紫外光を集光して出射するコレクタミラーと、
前記チャンバ内において前記コレクタミラーを支持するコレクタミラーホルダと、
前記チャンバ内において、前記コレクタミラーホルダ、前記ターゲット供給部、及び、前記チャンバの内壁の内の1つの構造物との間に熱伝導材料を挟んで設置され、プラズマから発生するイオンに対して前記構造物を遮蔽し、前記構造物を形成する第1の材料よりも極端紫外光の透過率が高い第2の材料で形成された遮蔽材と、
を具備する極端紫外光源装置。 - 前記構造物と前記遮蔽材との間に、前記遮蔽材を冷却するための冷却装置が配置されている、請求項1記載の極端紫外光源装置。
- 前記ドライバレーザによって生成される励起用レーザビームを集光するレンズと、前記レンズを支持するレンズホルダとが、前記チャンバ内に設置されており、前記遮蔽材が、プラズマから発生するイオンに対して前記レンズホルダを遮蔽する遮蔽材を含む、請求項1又は2記載の極端紫外光源装置。
- ドライバレーザによって生成されるレーザビームをターゲットに照射することにより、プラズマから極端紫外光を発生する極端紫外光源装置であって、
極端紫外光の生成が行われるチャンバと、
前記チャンバ内の所定の位置にターゲットを供給するターゲット供給部と、
前記チャンバ内に設置され、反射面に多層膜を有し、プラズマから放射される極端紫外光を集光して出射するコレクタミラーと、
前記チャンバ内において前記コレクタミラーを支持するコレクタミラーホルダと、
を具備し、前記コレクタミラーホルダ、及び、前記チャンバの内壁の内の少なくとも1つの構造物の少なくとも一部が、前記構造物を形成する第1の材料よりも極端紫外光の透過率が高い第2の材料によってコーティングされている、極端紫外光源装置。 - 前記ドライバレーザによって生成される励起用レーザビームを集光するレンズと、前記レンズを支持するレンズホルダとが、前記チャンバ内に設置されており、前記レンズホルダの少なくとも一部が、前記第2の材料によってコーティングされている、請求項4記載の極端紫外光源装置。
- 前記第1の材料が、ステンレス鋼を含む、請求項1〜5のいずれか1項記載の極端紫外光源装置。
- 前記第2の材料が、シリコン(Si)、ジルコニウム(Zr)、モリブデン(Mo)、リチウム(Li)、アルミニウム(Al)、又は、それらの合金を含む、請求項1〜6のいずれか1項記載の極端紫外光源装置。
- ドライバレーザによって生成されるレーザビームをターゲットに照射することにより、プラズマから極端紫外光を発生する極端紫外光源装置であって、
極端紫外光の生成が行われるチャンバと、
前記チャンバ内の所定の位置にターゲットを供給するターゲット供給部と、
前記チャンバ内に設置され、反射面に多層膜を有し、プラズマから放射される極端紫外光を集光して出射するコレクタミラーと、
前記チャンバ内において前記コレクタミラーを支持するコレクタミラーホルダと、
を具備し、前記コレクタミラーホルダ、及び、前記チャンバの内壁の内の少なくとも1つの構造物の少なくとも一部が、シリコン(Si)、ジルコニウム(Zr)、モリブデン(Mo)、リチウム(Li)、アルミニウム(Al)、又は、それらの合金を含む材料で形成されている、極端紫外光源装置。 - 前記ドライバレーザによって生成される励起用レーザビームを集光するレンズと、前記レンズを支持するレンズホルダとが、前記チャンバ内に設置されており、前記レンズホルダの少なくとも一部が、シリコン(Si)、ジルコニウム(Zr)、モリブデン(Mo)、リチウム(Li)、アルミニウム(Al)、又は、それらの合金を含む材料で形成されている、請求項8記載の極端紫外光源装置。
Priority Applications (2)
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JP2007111704A JP5001055B2 (ja) | 2007-04-20 | 2007-04-20 | 極端紫外光源装置 |
US12/453,058 US8450706B2 (en) | 2007-04-20 | 2009-04-28 | Extreme ultraviolet light source apparatus |
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JP2007111704A JP5001055B2 (ja) | 2007-04-20 | 2007-04-20 | 極端紫外光源装置 |
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JP2008270533A JP2008270533A (ja) | 2008-11-06 |
JP5001055B2 true JP5001055B2 (ja) | 2012-08-15 |
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Cited By (1)
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US10880981B2 (en) * | 2017-09-29 | 2020-12-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Collector pellicle |
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US7671349B2 (en) * | 2003-04-08 | 2010-03-02 | Cymer, Inc. | Laser produced plasma EUV light source |
JP5086664B2 (ja) * | 2007-03-02 | 2012-11-28 | ギガフォトン株式会社 | 極端紫外光源装置 |
JP5426317B2 (ja) | 2008-10-23 | 2014-02-26 | ギガフォトン株式会社 | 極端紫外光光源装置 |
KR101622272B1 (ko) * | 2008-12-16 | 2016-05-18 | 코닌클리케 필립스 엔.브이. | 향상된 효율로 euv 방사선 또는 소프트 x선을 생성하기 위한 방법 및 장치 |
JP5580032B2 (ja) * | 2008-12-26 | 2014-08-27 | ギガフォトン株式会社 | 極端紫外光光源装置 |
JP5455661B2 (ja) * | 2009-01-29 | 2014-03-26 | ギガフォトン株式会社 | 極端紫外光源装置 |
JP2011049513A (ja) * | 2009-07-30 | 2011-03-10 | Ushio Inc | 光源装置 |
JP2011192965A (ja) * | 2010-02-22 | 2011-09-29 | Komatsu Ltd | チャンバ装置、および極端紫外光生成装置 |
EP2550564B1 (en) * | 2010-03-25 | 2015-03-04 | ETH Zurich | A beam line for a source of extreme ultraviolet (euv) radiation |
JP5726587B2 (ja) * | 2010-10-06 | 2015-06-03 | ギガフォトン株式会社 | チャンバ装置 |
JP5802465B2 (ja) * | 2010-10-29 | 2015-10-28 | ギガフォトン株式会社 | ドロップレット生成及び検出装置、並びにドロップレット制御装置 |
JP5921879B2 (ja) * | 2011-03-23 | 2016-05-24 | ギガフォトン株式会社 | ターゲット供給装置及び極端紫外光生成装置 |
US8748853B2 (en) * | 2011-03-24 | 2014-06-10 | Gigaphoton Inc. | Chamber apparatus |
US9310689B2 (en) | 2011-09-02 | 2016-04-12 | Asml Netherlands B.V. | Radiation source and lithographic apparatus |
NL2009359A (en) * | 2011-09-23 | 2013-03-26 | Asml Netherlands Bv | Radiation source. |
TWI596384B (zh) * | 2012-01-18 | 2017-08-21 | Asml荷蘭公司 | 光源收集器元件、微影裝置及元件製造方法 |
JP5982137B2 (ja) * | 2012-03-05 | 2016-08-31 | ギガフォトン株式会社 | ターゲット供給装置 |
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