KR100909697B1 - 반도체장치의 제조방법 및 기판처리장치 - Google Patents

반도체장치의 제조방법 및 기판처리장치 Download PDF

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KR100909697B1
KR100909697B1 KR1020077019513A KR20077019513A KR100909697B1 KR 100909697 B1 KR100909697 B1 KR 100909697B1 KR 1020077019513 A KR1020077019513 A KR 1020077019513A KR 20077019513 A KR20077019513 A KR 20077019513A KR 100909697 B1 KR100909697 B1 KR 100909697B1
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containing gas
processing chamber
temperature
hydrogen
substrate
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KR20070098952A (ko
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카즈히로 유아사
야스히로 메가와
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가부시키가이샤 히다치 고쿠사이 덴키
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020077019513A 2005-03-08 2006-03-08 반도체장치의 제조방법 및 기판처리장치 Active KR100909697B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005064475 2005-03-08
JPJP-P-2005-00064475 2005-03-08
PCT/JP2006/304429 WO2006095752A1 (ja) 2005-03-08 2006-03-08 半導体装置の製造方法および基板処理装置

Related Child Applications (1)

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KR1020097005917A Division KR100966086B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치

Publications (2)

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KR20070098952A KR20070098952A (ko) 2007-10-05
KR100909697B1 true KR100909697B1 (ko) 2009-07-29

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KR1020077019513A Active KR100909697B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조방법 및 기판처리장치
KR1020107002352A Active KR100982996B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020097005917A Active KR100966086B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020107002353A Active KR100994649B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020107010998A Active KR101002945B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치

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KR1020107002352A Active KR100982996B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020097005917A Active KR100966086B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020107002353A Active KR100994649B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치
KR1020107010998A Active KR101002945B1 (ko) 2005-03-08 2006-03-08 반도체장치의 제조 방법 및 기판처리장치

Country Status (5)

Country Link
US (2) US7713883B2 (enExample)
JP (3) JP4672007B2 (enExample)
KR (5) KR100909697B1 (enExample)
TW (1) TW200705552A (enExample)
WO (1) WO2006095752A1 (enExample)

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JP3985899B2 (ja) * 2002-03-28 2007-10-03 株式会社日立国際電気 基板処理装置
JP4943047B2 (ja) * 2006-04-07 2012-05-30 東京エレクトロン株式会社 処理装置及び処理方法
JP2008186865A (ja) * 2007-01-26 2008-08-14 Tokyo Electron Ltd 基板処理装置
JP4611414B2 (ja) 2007-12-26 2011-01-12 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5575582B2 (ja) * 2007-12-26 2014-08-20 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
JP5383332B2 (ja) * 2008-08-06 2014-01-08 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
JP5665289B2 (ja) 2008-10-29 2015-02-04 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
US20110001179A1 (en) * 2009-07-03 2011-01-06 Renesas Electronics Corporation Semiconductor device and manufacturing method of the same
CN105256276B (zh) * 2010-06-10 2018-10-26 应用材料公司 具有增强的离子化和rf 功率耦合的低电阻率钨pvd
KR101509453B1 (ko) * 2011-06-03 2015-04-07 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 방법 및 기판 처리 장치
JP6254098B2 (ja) * 2012-02-13 2017-12-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板の選択性酸化のための方法および装置
JP6091932B2 (ja) * 2012-03-22 2017-03-08 株式会社ニューフレアテクノロジー 炭化珪素の成膜装置および炭化珪素の成膜方法
US20140034632A1 (en) * 2012-08-01 2014-02-06 Heng Pan Apparatus and method for selective oxidation at lower temperature using remote plasma source
JP6196106B2 (ja) * 2013-09-13 2017-09-13 東京エレクトロン株式会社 シリコン酸化膜の製造方法
JP6380063B2 (ja) * 2014-12-08 2018-08-29 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、および、気相成長装置
JP6573578B2 (ja) 2016-05-31 2019-09-11 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP6745887B2 (ja) * 2016-09-23 2020-08-26 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
CN112740377B (zh) 2018-09-21 2024-05-28 株式会社国际电气 半导体器件的制造方法、衬底处理装置及记录介质
JP7345245B2 (ja) * 2018-11-13 2023-09-15 信越半導体株式会社 貼り合わせｓｏｉウェーハの製造方法
TW202107528A (zh) * 2019-04-30 2021-02-16 美商得昇科技股份有限公司 氫氣輔助的大氣自由基氧化
WO2023099926A1 (en) * 2021-12-03 2023-06-08 Organic Electronic Technologies Private Company Printed transparent electrode using silver nanowires and metal oxide nanoparticles blend for fully printed electronic devices
KR20230090855A (ko) * 2021-12-15 2023-06-22 주식회사 원익아이피에스 기판처리방법
US20230215737A1 (en) * 2021-12-31 2023-07-06 Texas Instruments Incorporated Method of annealing out silicon defectivity
JP7651533B2 (ja) * 2022-09-26 2025-03-26 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、基板処理装置およびプログラム

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JP2000211998A (ja) * 1999-01-25 2000-08-02 Angstrom Technology Partnership シリコンの酸化方法及びそれを用いた単結晶シリコン酸化膜の製造方法

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Also Published As

Publication number Publication date
KR101002945B1 (ko) 2010-12-21
JP5399996B2 (ja) 2014-01-29
KR20090033923A (ko) 2009-04-06
KR20100057101A (ko) 2010-05-28
KR20070098952A (ko) 2007-10-05
US7713883B2 (en) 2010-05-11
KR100966086B1 (ko) 2010-06-28
TW200705552A (en) 2007-02-01
JP2011003915A (ja) 2011-01-06
US20080124943A1 (en) 2008-05-29
JP4672007B2 (ja) 2011-04-20
TWI342585B (enExample) 2011-05-21
KR20100018110A (ko) 2010-02-16
JPWO2006095752A1 (ja) 2008-08-14
JP2011077534A (ja) 2011-04-14
US20100192855A1 (en) 2010-08-05
WO2006095752A1 (ja) 2006-09-14
KR100994649B1 (ko) 2010-11-16
KR100982996B1 (ko) 2010-09-17
JP5325363B2 (ja) 2013-10-23
KR20100028663A (ko) 2010-03-12

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